{"id":"https://openalex.org/W7225413736","doi":"https://doi.org/10.7498/aps.76.20261237","title":"Gate Dielectric Engineering and Performance Optimization of Monolayer MoS2 Field-Effect Transistors","display_name":"Gate Dielectric Engineering and Performance Optimization of Monolayer MoS2 Field-Effect Transistors","publication_year":2026,"publication_date":"2026-11-07","ids":{"openalex":"https://openalex.org/W7225413736","doi":"https://doi.org/10.7498/aps.76.20261237"},"language":"en","primary_location":{"id":"doi:10.7498/aps.76.20261237","doi":"https://doi.org/10.7498/aps.76.20261237","is_oa":true,"landing_page_url":"https://doi.org/10.7498/aps.76.20261237","pdf_url":"https://wulixb.iphy.ac.cn/cn/article/pdf/preview/10.7498/aps.76.20261237.pdf","source":{"id":"https://openalex.org/S950076683","display_name":"Acta Physica Sinica","issn_l":"1000-3290","issn":["1000-3290"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319982","host_organization_name":"Science Press","host_organization_lineage":["https://openalex.org/P4310319982"],"host_organization_lineage_names":["Science Press"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Acta Physica Sinica","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://wulixb.iphy.ac.cn/cn/article/pdf/preview/10.7498/aps.76.20261237.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5161071568","display_name":"QI Jinfeng","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"QI Jinfeng","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067942356","display_name":"\u5218\u7acb\u82f1 Liu Liying","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"LIU Liying","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5161024415","display_name":"XING Lin","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"XING Lin","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5161128096","display_name":"Zhao Bingchao","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhao Bingchao","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5135888958","display_name":"Wang Ruzhi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wang Ruzhi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"76","issue":"3","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/monolayer-mos2","display_name":"monolayer MoS2","score":0.9490000009536743},{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.9559999704360962},{"id":"https://openalex.org/keywords/gate-dielectric-engineering","display_name":"gate dielectric engineering","score":0.9769999980926514},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.8009999990463257},{"id":"https://openalex.org/keywords/hfo2-dielectric","display_name":"HfO2 dielectric","score":0.8159999847412109},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.925000011920929},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8640000224113464},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.7080000042915344},{"id":"https://openalex.org/keywords/silica","display_name":"silica","score":0.5239999890327454},{"id":"https://openalex.org/keywords/alumina","display_name":"alumina","score":0.9559999704360962},{"id":"https://openalex.org/keywords/two-dimensional-semiconductors","display_name":"two-dimensional semiconductors","score":0.8460000157356262},{"id":"https://openalex.org/keywords/transition-metal-dichalcogenides","display_name":"transition metal dichalcogenides","score":0.7059999704360962},{"id":"https://openalex.org/keywords/low-power-transistors","display_name":"low-power transistors","score":0.7229999899864197}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8269000053405762},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.771399974822998},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7175999879837036},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.659500002861023},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6150000095367432},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5863000154495239},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3643999993801117},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.31040000915527344},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.301800012588501},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.296099990606308},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.28130000829696655},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2671000063419342},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2567000091075897},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.25220000743865967}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7498/aps.76.20261237","doi":"https://doi.org/10.7498/aps.76.20261237","is_oa":true,"landing_page_url":"https://doi.org/10.7498/aps.76.20261237","pdf_url":"https://wulixb.iphy.ac.cn/cn/article/pdf/preview/10.7498/aps.76.20261237.pdf","source":{"id":"https://openalex.org/S950076683","display_name":"Acta Physica Sinica","issn_l":"1000-3290","issn":["1000-3290"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319982","host_organization_name":"Science Press","host_organization_lineage":["https://openalex.org/P4310319982"],"host_organization_lineage_names":["Science Press"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Acta Physica Sinica","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.7498/aps.76.20261237","doi":"https://doi.org/10.7498/aps.76.20261237","is_oa":true,"landing_page_url":"https://doi.org/10.7498/aps.76.20261237","pdf_url":"https://wulixb.iphy.ac.cn/cn/article/pdf/preview/10.7498/aps.76.20261237.pdf","source":{"id":"https://openalex.org/S950076683","display_name":"Acta Physica Sinica","issn_l":"1000-3290","issn":["1000-3290"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319982","host_organization_name":"Science Press","host_organization_lineage":["https://openalex.org/P4310319982"],"host_organization_lineage_names":["Science Press"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Acta Physica Sinica","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7225413736.pdf","grobid_xml":"https://content.openalex.org/works/W7225413736.grobid-xml"},"referenced_works_count":44,"referenced_works":["https://openalex.org/W1558404503","https://openalex.org/W1973130783","https://openalex.org/W1976568534","https://openalex.org/W1981940044","https://openalex.org/W1982876375","https://openalex.org/W2021994802","https://openalex.org/W2030735318","https://openalex.org/W2045393275","https://openalex.org/W2124029745","https://openalex.org/W2148873990","https://openalex.org/W2161930214","https://openalex.org/W2164654080","https://openalex.org/W2314274457","https://openalex.org/W2561049761","https://openalex.org/W2594067101","https://openalex.org/W2643813052","https://openalex.org/W2790396479","https://openalex.org/W2795285915","https://openalex.org/W2806966564","https://openalex.org/W2807630159","https://openalex.org/W2809407184","https://openalex.org/W2883694911","https://openalex.org/W2904582745","https://openalex.org/W2921507139","https://openalex.org/W3006340121","https://openalex.org/W3011576019","https://openalex.org/W3082301158","https://openalex.org/W3106231035","https://openalex.org/W4284702843","https://openalex.org/W4296360439","https://openalex.org/W4318949485","https://openalex.org/W4401389107","https://openalex.org/W4401505712","https://openalex.org/W4406115939","https://openalex.org/W4408123957","https://openalex.org/W4409137093","https://openalex.org/W4409140382","https://openalex.org/W4409354148","https://openalex.org/W4413102247","https://openalex.org/W4413112707","https://openalex.org/W4414523782","https://openalex.org/W4414602105","https://openalex.org/W7129723330","https://openalex.org/W7160243094"],"related_works":["https://openalex.org/W2804066958","https://openalex.org/W2247135228","https://openalex.org/W2593937480","https://openalex.org/W2603814146","https://openalex.org/W2247847625","https://openalex.org/W2023739149","https://openalex.org/W2602990668","https://openalex.org/W7144984955","https://openalex.org/W7038162593","https://openalex.org/W2581985979"],"abstract_inverted_index":{"\u968f\u7740\u7845\u57fa\u7535\u5b50\u5668\u4ef6\u7279\u5f81\u5c3a\u5bf8\u6301\u7eed\u7f29\u5c0f\uff0c\u77ed\u6c9f\u9053\u6548\u5e94\u548c\u70ed\u8017\u6563\u74f6\u9888\u95ee\u9898\u65e5\u76ca\u4e25\u5cfb\u3002\u4e8c\u786b\u5316\u94bc\uff08":[0],"molybdenum":[1],"disulfide,MoS2\uff09\u4f5c\u4e3a\u5178\u578b\u7684\u4e8c\u7ef4\u8fc7\u6e21\u91d1\u5c5e\u786b\u65cf\u5316\u5408\u7269\uff08":[2],"transition-metal":[3],"dichalcogenides,TMDCs\uff09\uff0c\u56e0\u5176\u539f\u5b50\u7ea7\u539a\u5ea6\u3001\u76f4\u63a5\u5e26\u9699\u4ee5\u53ca\u4f18\u5f02\u7535\u5b66\u7279\u6027\uff0c\u5728\u4e0b\u4e00\u4ee3\u4f4e\u529f\u8017\u573a\u6548\u5e94\u6676\u4f53\u7ba1\u4e2d\u5c55\u73b0\u51fa\u5de8\u5927\u6f5c\u529b\u3002\u4f46\u5176\u539f\u5b50\u7ea7\u6c9f\u9053\u4f7f\u8f7d\u6d41\u5b50\u6613\u53d7\u754c\u9762\u6563\u5c04\u4e0e\u4ecb\u7535\u73af\u5883\u5f71\u54cd\uff0c\u4ecd\u4e25\u91cd\u5236\u7ea6\u5668\u4ef6\u8f93\u8fd0\u6027\u80fd\u3002\u672c\u6587\u901a\u8fc7\u6784\u5efaMoS2\u80cc\u6805\u573a\u6548\u5e94\u6676\u4f53\u7ba1\u6a21\u578b\uff0c\u7cfb\u7edf\u5bf9\u6bd4\u4e86\u4e8c\u6c27\u5316\u7845\uff08":[4],"SiO2\uff09\u3001\u6c27\u5316\u94dd\uff08":[5],"Al2O3\uff09\u3001\u4e8c\u6c27\u5316\u94ea\uff08":[6],"HfO2\uff09\u4e09\u79cd\u6805\u4ecb\u8d28\u5bf9\u5668\u4ef6\u7535\u5b66\u6027\u80fd\u7684\u5f71\u54cd\uff0c\u5e76\u8fdb\u4e00\u6b65\u5bf9HfO2\u6805\u4ecb\u8d28\u8fdb\u884c\u539a\u5ea6\u4f18\u5316\u3002\u7ed3\u679c\u8868\u660e\uff0cHfO2\u9ad8\u4ecb\u7535\u5e38\u6570\u6805\u4ecb\u8d28\u901a\u8fc7\u5f3a\u4ecb\u7535\u5c4f\u853d\u6709\u6548\u6291\u5236\u5e93\u4ed1\u6742\u8d28\u6563\u5c04\uff0c\u572810":[7],"nm\u539a\u5ea6\u5904\u5b9e\u73b0\u6700\u4f18\u6027\u80fd\uff1a\u8de8\u5bfc\u8fbe666":[8],"\u03bcS\uff0c\u5f00\u5173\u6bd4~1013\u3001\u4e9a\u9608\u503c\u6446\u5e45~70":[9],"mV/dec\uff0c\u4f46\u53d7\u8fdc\u7a0b\u754c\u9762\u58f0\u5b50\u6563\u5c04\u5f71\u54cd\uff0c\u5176\u8f7d\u6d41\u5b50\u8fc1\u79fb\u7387\u964d\u81f3137cm2/(V\u00b7s)\u3002\u672c\u7814\u7a76\u9610\u660e\u4e86MoS2\u573a\u6548\u5e94\u6676\u4f53\u7ba1\u6805\u4ecb\u8d28\u9009\u62e9\u4e0e\u539a\u5ea6\u8bbe\u8ba1\u5bf9MoS2\u6676\u4f53\u7ba1\u7535\u5b66\u8f93\u8fd0\u7279\u6027\u7684\u7ade\u4e89\u673a\u5236\uff0c\u4e3a\u4e8c\u7ef4\u534a\u5bfc\u4f53\u6676\u4f53\u7ba1\u7684\u6805\u4ecb\u8d28\u5de5\u7a0b\u7814\u7a76\u63d0\u4f9b\u4e86\u91cd\u8981\u7684\u7406\u8bba\u53c2\u8003\u3002":[10]},"counts_by_year":[],"updated_date":"2026-11-09T13:22:03.289127","created_date":"2026-11-07T00:00:00"}