{"id":"https://openalex.org/W7225319860","doi":"https://doi.org/10.1021/acsami.6c17743","title":"Localized Trap-State Engineering of Subthreshold Swing in Amorphous In\u2013Ga\u2013O Thin-Film Transistors via Vertically Positioned Sn \u03b4-Doping","display_name":"Localized Trap-State Engineering of Subthreshold Swing in Amorphous In\u2013Ga\u2013O Thin-Film Transistors via Vertically Positioned Sn \u03b4-Doping","publication_year":2026,"publication_date":"2026-11-05","ids":{"openalex":"https://openalex.org/W7225319860","doi":"https://doi.org/10.1021/acsami.6c17743","pmid":"https://pubmed.ncbi.nlm.nih.gov/42987250"},"language":"en","primary_location":{"id":"doi:10.1021/acsami.6c17743","doi":"https://doi.org/10.1021/acsami.6c17743","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsami.6c17743","pdf_url":null,"source":{"id":"https://openalex.org/S164001016","display_name":"ACS Applied Materials & Interfaces","issn_l":"1944-8244","issn":["1944-8244","1944-8252"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","ki-jl-1","medline","norway-1","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Materials & Interfaces","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","pubmed"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100350941","display_name":"Jae Young Lee","orcid":"https://orcid.org/0000-0002-8881-154X","observed_orcids":["https://orcid.org/0000-0002-8881-154X"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Young Lee","raw_affiliation_strings":["Hanyang University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114141501","display_name":"Jeong Eun Oh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeong Eun Oh","raw_affiliation_strings":["Hanyang University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110840409","display_name":"Ji Hun An","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ji Hun An","raw_affiliation_strings":["Hanyang University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5160812373","display_name":"Ki Hoon Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ki Hoon Choi","raw_affiliation_strings":["Hanyang University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005183857","display_name":"Jae Kyeong Jeong","orcid":"https://orcid.org/0000-0003-3857-1039","observed_orcids":["https://orcid.org/0000-0003-3857-1039"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jae Kyeong Jeong","raw_affiliation_strings":["Hanyang University , , ,"],"raw_orcid":"https://orcid.org/0000-0003-3857-1039","affiliations":[{"raw_affiliation_string":"Hanyang University , , ,","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5005183857"],"corresponding_institution_ids":["https://openalex.org/I4575257"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.9599999785423279},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9539999961853027},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.8830000162124634},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.972000002861023},{"id":"https://openalex.org/keywords/active-matrix-displays","display_name":"active-matrix displays","score":0.8809999823570251}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.878600001335144},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.7384999990463257},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.6866000294685364},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.685699999332428},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.651199996471405},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5976999998092651},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5235000252723694},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5213000178337097},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.49779999256134033},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.4514999985694885},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.4327999949455261},{"id":"https://openalex.org/C177562468","wikidata":"https://www.wikidata.org/wiki/Q182893","display_name":"Dispersion (optics)","level":2,"score":0.42899999022483826},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.427700012922287},{"id":"https://openalex.org/C2780924660","wikidata":"https://www.wikidata.org/wiki/Q205123","display_name":"Tin oxide","level":3,"score":0.3765999972820282},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.3677000105381012},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.33079999685287476},{"id":"https://openalex.org/C2776026197","wikidata":"https://www.wikidata.org/wiki/Q201890","display_name":"Active layer","level":4,"score":0.3125},{"id":"https://openalex.org/C2778541603","wikidata":"https://www.wikidata.org/wiki/Q152763","display_name":"Lithium (medication)","level":2,"score":0.30059999227523804},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.29840001463890076},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.27399998903274536},{"id":"https://openalex.org/C87210426","wikidata":"https://www.wikidata.org/wiki/Q1072476","display_name":"Bending","level":2,"score":0.27079999446868896},{"id":"https://openalex.org/C162743726","wikidata":"https://www.wikidata.org/wiki/Q7115642","display_name":"Oxide thin-film transistor","level":4,"score":0.27079999446868896},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.2639000117778778}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1021/acsami.6c17743","doi":"https://doi.org/10.1021/acsami.6c17743","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsami.6c17743","pdf_url":null,"source":{"id":"https://openalex.org/S164001016","display_name":"ACS Applied Materials & Interfaces","issn_l":"1944-8244","issn":["1944-8244","1944-8252"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","ki-jl-1","medline","norway-1","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Materials & Interfaces","raw_type":"journal-article"},{"id":"pmid:42987250","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/42987250","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS applied materials & interfaces","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320335489","display_name":"Institute for Information and Communications Technology Promotion","ror":"https://ror.org/01g0hqq23"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":55,"referenced_works":["https://openalex.org/W1965348778","https://openalex.org/W1966189370","https://openalex.org/W1981813867","https://openalex.org/W2042215800","https://openalex.org/W2078364879","https://openalex.org/W2090295012","https://openalex.org/W2131716975","https://openalex.org/W2133119662","https://openalex.org/W2410296872","https://openalex.org/W2512973443","https://openalex.org/W2555494305","https://openalex.org/W2558889887","https://openalex.org/W3088948872","https://openalex.org/W3093153700","https://openalex.org/W3104030926","https://openalex.org/W3117451244","https://openalex.org/W3117971052","https://openalex.org/W4205975747","https://openalex.org/W4225552051","https://openalex.org/W4283782157","https://openalex.org/W4306790610","https://openalex.org/W4321021398","https://openalex.org/W4327593054","https://openalex.org/W4362659583","https://openalex.org/W4386069676","https://openalex.org/W4386074352","https://openalex.org/W4388579602","https://openalex.org/W4390031877","https://openalex.org/W4390671477","https://openalex.org/W4401070370","https://openalex.org/W4401119920","https://openalex.org/W4404940557","https://openalex.org/W4406432701","https://openalex.org/W4406844208","https://openalex.org/W4408363019","https://openalex.org/W4409266851","https://openalex.org/W4411182099","https://openalex.org/W4412121438","https://openalex.org/W4413001864","https://openalex.org/W4413472070","https://openalex.org/W4414972216","https://openalex.org/W4415699271","https://openalex.org/W4417170197","https://openalex.org/W7077056143","https://openalex.org/W7117541943","https://openalex.org/W7123340151","https://openalex.org/W7125410752","https://openalex.org/W7125793566","https://openalex.org/W7126251943","https://openalex.org/W7128296049","https://openalex.org/W7128397034","https://openalex.org/W7139095071","https://openalex.org/W7141389510","https://openalex.org/W7149532904","https://openalex.org/W7204446336"],"related_works":["https://openalex.org/W4320018405","https://openalex.org/W2964058329","https://openalex.org/W2598729472","https://openalex.org/W4401119920","https://openalex.org/W2124132059","https://openalex.org/W7128397034","https://openalex.org/W4283830377","https://openalex.org/W2071391359","https://openalex.org/W7221584200","https://openalex.org/W4394727428"],"abstract_inverted_index":{"Precise":[0],"control":[1],"of":[2,43,71,86,108,165,222,244,274],"the":[3,40,50,65,69,72,76,80,87,97,105,109,113,118,122,162,172,200,208,212,223,236,245,249,272],"subthreshold":[4,177],"swing":[5],"(SS)":[6],"in":[7,23,32,144],"pixel-driving":[8,285],"thin-film":[9],"transistors":[10],"(TFTs)":[11],"is":[12],"critical":[13],"for":[14,270,283],"accurate":[15],"gray-scale":[16],"expression":[17],"and":[18,74,83,141,171,196,241,267,292],"stable":[19],"analog":[20],"current":[21,290],"modulation":[22,252,291],"active-matrix":[24],"displays.":[25],"Here,":[26],"we":[27],"demonstrate":[28],"deterministic":[29],"SS":[30,123,251,273],"engineering":[31],"amorphous":[33,275],"indium-gallium":[34],"oxide":[35,51,276],"(a-IGO)":[36],"TFTs":[37,215],"by":[38,104,131,186],"controlling":[39],"vertical":[41],"position":[42],"a":[44,132,142,279],"tin":[45],"(Sn)":[46],"\u03b4-doped":[47,59,115,202,214],"layer":[48,56,116,203],"within":[49],"channel":[52,88],"using":[53],"plasma-enhanced":[54],"atomic":[55],"deposition.":[57],"Sn":[58,110,114,201,213,262],"layers":[60],"were":[61,100],"selectively":[62],"inserted":[63],"near":[64,75],"passivation":[66],"side,":[67],"at":[68],"middle":[70],"channel,":[73],"gate-insulator":[77],"interface,":[78],"while":[79],"macroscopic":[81],"structural":[82,95],"chemical":[84],"properties":[85],"films":[89],"remained":[90],"nearly":[91],"identical.":[92],"Despite":[93],"this":[94],"similarity,":[96],"electrical":[98,158],"characteristics":[99],"systematically":[101],"modulated":[102],"solely":[103],"spatial":[106,180],"location":[107],"layer.":[111],"As":[112],"approached":[117],"front-channel":[119],"conduction":[120],"path,":[121],"increased":[124],"from":[125,136,147,161],"0.128":[126],"to":[127,138,149,207,220,254],"0.462":[128],"V/decade,":[129],"accompanied":[130],"positive":[133],"threshold-voltage":[134,228],"shift":[135],"0.03":[137],"0.99":[139],"V":[140,234],"decrease":[143],"field-effect":[145],"mobility":[146],"36.5":[148],"19.3":[150],"cm2/V\u00b7s.":[151],"Energy-band":[152],"analyses":[153],"indicate":[154],"that":[155,221,287],"these":[156],"position-dependent":[157],"variations":[159],"originate":[160],"different":[163],"degrees":[164],"interaction":[166],"between":[167],"Sn2+-induced":[168],"trap":[169],"centers":[170],"bending":[173],"quasi-Fermi":[174],"level":[175],"during":[176],"operation.":[178],"This":[179],"trap-interaction":[181],"model":[182],"was":[183,204],"further":[184],"supported":[185],"frequency-dependent":[187],"capacitance-voltage":[188],"measurements,":[189],"which":[190],"revealed":[191],"more":[192],"pronounced":[193],"frequency":[194],"dispersion":[195],"stretch-out":[197],"behavior":[198],"when":[199],"located":[205],"closer":[206],"front":[209],"channel.":[210],"Importantly,":[211],"exhibited":[216],"bias-stress":[217],"reliability":[218],"comparable":[219],"pristine":[224],"IGO":[225],"reference,":[226],"with":[227,248],"shifts":[229],"no":[230],"greater":[231],"than":[232],"0.60":[233],"under":[235],"tested":[237],"conditions.":[238],"The":[239],"capture":[240],"emission":[242],"kinetics":[243],"states":[246],"associated":[247],"Sn2+-related":[250],"remain":[253],"be":[255],"established.":[256],"These":[257],"results":[258],"establish":[259],"vertically":[260],"positioned":[261],"\u03b4-doping":[263],"as":[264],"an":[265],"effective":[266],"reliable":[268],"strategy":[269],"tailoring":[271],"TFTs,":[277],"providing":[278],"useful":[280],"device-design":[281],"pathway":[282],"OLED":[284],"circuits":[286],"require":[288],"precise":[289],"improved":[293],"low-gray-level":[294],"uniformity.":[295]},"counts_by_year":[],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2026-11-06T00:00:00"}