{"id":"https://openalex.org/W7225251333","doi":"https://doi.org/10.1021/acsami.6c16962","title":"Composition-Dependent Atomic Layer Etching of Multicomponent Oxide Semiconductors with Preserved Electrical Performance","display_name":"Composition-Dependent Atomic Layer Etching of Multicomponent Oxide Semiconductors with Preserved Electrical Performance","publication_year":2026,"publication_date":"2026-11-04","ids":{"openalex":"https://openalex.org/W7225251333","doi":"https://doi.org/10.1021/acsami.6c16962","pmid":"https://pubmed.ncbi.nlm.nih.gov/42977722"},"language":"en","primary_location":{"id":"doi:10.1021/acsami.6c16962","doi":"https://doi.org/10.1021/acsami.6c16962","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsami.6c16962","pdf_url":null,"source":{"id":"https://openalex.org/S164001016","display_name":"ACS Applied Materials & Interfaces","issn_l":"1944-8244","issn":["1944-8244","1944-8252"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","ki-jl-1","medline","norway-1","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Materials & Interfaces","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref","pubmed"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067039251","display_name":"Min Chan Kim","orcid":"https://orcid.org/0000-0002-4571-8767","observed_orcids":["https://orcid.org/0000-0002-4571-8767","https://orcid.org/0009-0002-7436-5689"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min Chan Kim","raw_affiliation_strings":["Hanyang University , , 222 Wangsimni-ro , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , 222 Wangsimni-ro , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063106968","display_name":"Min-Seo Kim","orcid":"https://orcid.org/0009-0003-3822-3277","observed_orcids":["https://orcid.org/0009-0003-3822-3277","https://orcid.org/0009-0006-5091-1744"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min-seo Kim","raw_affiliation_strings":["Hanyang University , , 222 Wangsimni-ro , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , 222 Wangsimni-ro , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056137004","display_name":"Hyeseong Lee","orcid":"https://orcid.org/0000-0002-7137-8874","observed_orcids":["https://orcid.org/0000-0002-7137-8874"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyeseong Lee","raw_affiliation_strings":["Hanyang University , , 222 Wangsimni-ro , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , 222 Wangsimni-ro , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061813491","display_name":"Hae Lin Yang","orcid":"https://orcid.org/0009-0001-6016-5240","observed_orcids":["https://orcid.org/0009-0001-6016-5240"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hae Lin Yang","raw_affiliation_strings":["Hanyang University , , 222 Wangsimni-ro , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , 222 Wangsimni-ro , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5160694058","display_name":"Jinho Ahn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jinho Ahn","raw_affiliation_strings":["Hanyang University , , 222 Wangsimni-ro , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University , , 222 Wangsimni-ro , , ,","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5071947816","display_name":"Jin\u2010Seong Park","orcid":"https://orcid.org/0000-0002-9070-5666","observed_orcids":["https://orcid.org/0000-0002-9070-5666"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jin-Seong Park","raw_affiliation_strings":["Hanyang University , , 222 Wangsimni-ro , , ,"],"raw_orcid":"https://orcid.org/0000-0002-9070-5666","affiliations":[{"raw_affiliation_string":"Hanyang University , , 222 Wangsimni-ro , , ,","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5071947816","https://openalex.org/A5160694058"],"corresponding_institution_ids":["https://openalex.org/I4575257"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.7486506,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.861299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.861299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.1152999997138977,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.005100000184029341,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-layer-etching","display_name":"atomic layer etching","score":1.0},{"id":"https://openalex.org/keywords/step-coverage","display_name":"step coverage","score":0.878000020980835},{"id":"https://openalex.org/keywords/low-damage-etching","display_name":"low-damage etching","score":0.5789999961853027},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.722000002861023}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9006999731063843},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6937000155448914},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.6136000156402588},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6086999773979187},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6025999784469604},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5895000100135803},{"id":"https://openalex.org/C105066941","wikidata":"https://www.wikidata.org/wiki/Q1424524","display_name":"Shallow trench isolation","level":4,"score":0.5636000037193298},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4975000023841858},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.45559999346733093},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.44780001044273376},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.4458000063896179},{"id":"https://openalex.org/C56951928","wikidata":"https://www.wikidata.org/wiki/Q3539213","display_name":"Trimming","level":2,"score":0.3856000006198883},{"id":"https://openalex.org/C180088628","wikidata":"https://www.wikidata.org/wiki/Q1069404","display_name":"Chemical-mechanical planarization","level":3,"score":0.3684000074863434},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.35350000858306885},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.3334999978542328},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.31859999895095825},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.31610000133514404},{"id":"https://openalex.org/C86537342","wikidata":"https://www.wikidata.org/wiki/Q2659774","display_name":"Compound semiconductor","level":4,"score":0.27880001068115234},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.2773999869823456},{"id":"https://openalex.org/C2777208637","wikidata":"https://www.wikidata.org/wiki/Q15679103","display_name":"Phosphorene","level":3,"score":0.2727000117301941},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.26660001277923584},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.2660999894142151},{"id":"https://openalex.org/C162743726","wikidata":"https://www.wikidata.org/wiki/Q7115642","display_name":"Oxide thin-film transistor","level":4,"score":0.2621999979019165},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.2515999972820282}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1021/acsami.6c16962","doi":"https://doi.org/10.1021/acsami.6c16962","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsami.6c16962","pdf_url":null,"source":{"id":"https://openalex.org/S164001016","display_name":"ACS Applied Materials & Interfaces","issn_l":"1944-8244","issn":["1944-8244","1944-8252"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","ki-jl-1","medline","norway-1","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Materials & Interfaces","raw_type":"journal-article"},{"id":"pmid:42977722","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/42977722","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS applied materials & interfaces","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":38,"referenced_works":["https://openalex.org/W1986820032","https://openalex.org/W1990798163","https://openalex.org/W1994277498","https://openalex.org/W2071450802","https://openalex.org/W2084501314","https://openalex.org/W2095567118","https://openalex.org/W2131716975","https://openalex.org/W2596724087","https://openalex.org/W2604019671","https://openalex.org/W2605053466","https://openalex.org/W2653063519","https://openalex.org/W2779254253","https://openalex.org/W2885754973","https://openalex.org/W2886146119","https://openalex.org/W2894985074","https://openalex.org/W2931684697","https://openalex.org/W2978176079","https://openalex.org/W2980918277","https://openalex.org/W3019723150","https://openalex.org/W3030517023","https://openalex.org/W3116702636","https://openalex.org/W3141090719","https://openalex.org/W3177959542","https://openalex.org/W4210744787","https://openalex.org/W4285798405","https://openalex.org/W4392155092","https://openalex.org/W4393145114","https://openalex.org/W4400422792","https://openalex.org/W4402434886","https://openalex.org/W4405851754","https://openalex.org/W4406432701","https://openalex.org/W4408651461","https://openalex.org/W4410085180","https://openalex.org/W4410502418","https://openalex.org/W4416068153","https://openalex.org/W4417159776","https://openalex.org/W7118168872","https://openalex.org/W7131069459"],"related_works":["https://openalex.org/W4412864717","https://openalex.org/W4405590192","https://openalex.org/W4415487342","https://openalex.org/W4392155092","https://openalex.org/W4416068153","https://openalex.org/W4396764066","https://openalex.org/W7117715604","https://openalex.org/W7212280132","https://openalex.org/W4415710293","https://openalex.org/W4285798405"],"abstract_inverted_index":{"Oxide":[0],"semiconductors":[1],"are":[2],"promising":[3],"channel":[4],"materials":[5],"for":[6,150],"next-generation":[7],"memory":[8,166],"device":[9,167],"scaling,":[10],"owing":[11],"to":[12,65,78,85,102,137],"their":[13],"low":[14],"off-state":[15],"current,":[16],"low-temperature":[17],"processability,":[18],"and":[19],"excellent":[20],"compatibility":[21],"with":[22,94],"back-end-of-line":[23],"manufacturing.":[24],"Here,":[25],"we":[26,116],"report":[27],"the":[28,36,61,79,86,151],"composition-dependent":[29],"atomic":[30],"layer":[31],"etching":[32],"(ALE)":[33],"behavior":[34],"of":[35,52,97,124,154],"multicomponent":[37,155],"oxide":[38,156],"semiconductor":[39,157],"InGaZnOx":[40],"(IGZO),":[41],"enabled":[42],"by":[43],"a":[44,146,160],"hydrogen-based":[45,143],"surface":[46],"modification":[47],"chemistry.":[48],"The":[49],"constituent":[50],"cations":[51],"IGZO":[53,126],"exhibit":[54],"markedly":[55],"different":[56],"reactivities":[57],"toward":[58,163],"hydrogen,":[59],"allowing":[60],"overall":[62],"etch":[63],"rate":[64],"be":[66],"systematically":[67],"tuned":[68],"through":[69],"elemental":[70],"composition.":[71],"Because":[72],"this":[73,112],"reaction":[74],"is":[75],"largely":[76],"confined":[77],"near-surface":[80],"region,":[81,89],"ALE":[82,120,144],"minimizes":[83],"damage":[84],"underlying":[87],"front-channel":[88],"achieving":[90],"atomic-scale":[91,152],"material":[92],"removal":[93],"minimal":[95],"degradation":[96],"electrical":[98],"performance,":[99],"in":[100],"contrast":[101],"conventional":[103],"dry-etching":[104],"approaches":[105],"that":[106,119],"often":[107],"degrade":[108],"transistor":[109],"characteristics.":[110],"Leveraging":[111],"low-damage,":[113],"self-limiting":[114],"characteristic,":[115],"further":[117],"demonstrate":[118],"enables":[121],"post-deposition":[122],"trimming":[123],"nonuniform":[125],"films":[127],"conformally":[128],"deposited":[129],"within":[130],"three-dimensional":[131,165],"trench":[132],"structures,":[133],"improving":[134],"step":[135],"coverage":[136],"nearly":[138],"100%.":[139],"These":[140],"results":[141],"establish":[142],"as":[145],"versatile,":[147],"composition-aware":[148],"process":[149],"control":[153],"channels,":[158],"offering":[159],"low-damage":[161],"route":[162],"scalable":[164],"architectures.":[168]},"counts_by_year":[],"updated_date":"2026-11-06T12:05:46.655746","created_date":"2026-11-05T00:00:00"}