{"id":"https://openalex.org/W7225237915","doi":"https://doi.org/10.1016/j.apsadv.2026.101094","title":"New Insights into the oxidation kinetics of SiGe-on-insulator layers","display_name":"New Insights into the oxidation kinetics of SiGe-on-insulator layers","publication_year":2026,"publication_date":"2026-11-04","ids":{"openalex":"https://openalex.org/W7225237915","doi":"https://doi.org/10.1016/j.apsadv.2026.101094"},"language":"en","primary_location":{"id":"doi:10.1016/j.apsadv.2026.101094","doi":"https://doi.org/10.1016/j.apsadv.2026.101094","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.apsadv.2026.101094","pdf_url":"https://www.sciencedirect.com/science/article/pii/S2666523926001649/pdf","source":{"id":"https://openalex.org/S4210213426","display_name":"Applied Surface Science Advances","issn_l":"2666-5239","issn":["2666-5239"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science Advances","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.sciencedirect.com/science/article/pii/S2666523926001649/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077247680","display_name":"Ismail Madaci","orcid":"https://orcid.org/0000-0003-4698-0086","observed_orcids":["https://orcid.org/0000-0003-4698-0086"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I4210098836","https://openalex.org/I4210112016","https://openalex.org/I4387153205"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Ismail Madaci","raw_affiliation_strings":["Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France"],"raw_orcid":"https://orcid.org/0000-0003-4698-0086","affiliations":[{"raw_affiliation_string":"Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I21491767","https://openalex.org/I4210112016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073683355","display_name":"Fabien Deprat","orcid":"https://orcid.org/0000-0002-4465-7325","observed_orcids":["https://orcid.org/0000-0002-4465-7325"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Fabien Deprat","raw_affiliation_strings":["STMicroelectronics, 38920 Crolles, France"],"raw_orcid":"https://orcid.org/0000-0002-4465-7325","affiliations":[{"raw_affiliation_string":"STMicroelectronics, 38920 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041355336","display_name":"Olivier Gourhant","orcid":"https://orcid.org/0000-0002-5087-5484","observed_orcids":["https://orcid.org/0000-0002-5087-5484"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Olivier Gourhant","raw_affiliation_strings":["STMicroelectronics, 38920 Crolles, France"],"raw_orcid":"https://orcid.org/0000-0002-5087-5484","affiliations":[{"raw_affiliation_string":"STMicroelectronics, 38920 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058943280","display_name":"Ileana Florea","orcid":"https://orcid.org/0000-0002-2860-3992","observed_orcids":["https://orcid.org/0000-0002-2860-3992"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I201841394","display_name":"Universit\u00e9 C\u00f4te d'Azur","ror":"https://ror.org/019tgvf94","country_code":"FR","type":"education","lineage":["https://openalex.org/I201841394"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Ileana Florea","raw_affiliation_strings":["Universit\u00e9 C\u00f4te d\u2019Azur, CRHEA, CNRS, 06905 Sophia-Antipolis, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universit\u00e9 C\u00f4te d\u2019Azur, CRHEA, CNRS, 06905 Sophia-Antipolis, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210124361"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005725278","display_name":"A. Ronda","orcid":"https://orcid.org/0000-0002-1600-3332","observed_orcids":["https://orcid.org/0000-0002-1600-3332"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I4210098836","https://openalex.org/I4210112016","https://openalex.org/I4387153205"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Antoine Ronda","raw_affiliation_strings":["Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I21491767","https://openalex.org/I4210112016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020804895","display_name":"Luc Favre","orcid":"https://orcid.org/0000-0002-9010-0085","observed_orcids":["https://orcid.org/0000-0002-9010-0085"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I4210098836","https://openalex.org/I4210112016","https://openalex.org/I4387153205"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Luc Favre","raw_affiliation_strings":["Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France"],"raw_orcid":"https://orcid.org/0000-0002-9010-0085","affiliations":[{"raw_affiliation_string":"Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I21491767","https://openalex.org/I4210112016"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002023780","display_name":"Isabelle Berb\u00e9zier","orcid":"https://orcid.org/0000-0003-1356-7527","observed_orcids":["https://orcid.org/0000-0003-1356-7527"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I4210098836","https://openalex.org/I4210112016","https://openalex.org/I4387153205"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Isabelle Berbezier","raw_affiliation_strings":["Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Aix Marseille Universit\u00e9, CNRS, IM2NP, 13397 Marseille, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I21491767","https://openalex.org/I4210112016"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5077247680"],"corresponding_institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I21491767","https://openalex.org/I4210112016"],"apc_list":{"value":2350,"currency":"USD","value_usd":2350},"apc_paid":{"value":2350,"currency":"USD","value_usd":2350},"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.74777718,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"36","issue":null,"first_page":"101094","last_page":"101094"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9887999892234802,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9887999892234802,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.004399999976158142,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0024999999441206455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sige-on-insulator","display_name":"SiGe-on-insulator","score":0.9929999709129333},{"id":"https://openalex.org/keywords/dry-thermal-oxidation","display_name":"dry thermal oxidation","score":0.8769999742507935},{"id":"https://openalex.org/keywords/oxidation-kinetics","display_name":"oxidation kinetics","score":0.9959999918937683},{"id":"https://openalex.org/keywords/deal-grove-model","display_name":"Deal-Grove model","score":0.9300000071525574},{"id":"https://openalex.org/keywords/parabolic-rate","display_name":"parabolic rate","score":0.6299999952316284},{"id":"https://openalex.org/keywords/oxidation-activation-energy","display_name":"oxidation activation energy","score":0.8180000185966492},{"id":"https://openalex.org/keywords/oxygen-incorporation","display_name":"oxygen incorporation","score":0.8149999976158142},{"id":"https://openalex.org/keywords/lattice-distortion","display_name":"lattice distortion","score":0.6990000009536743},{"id":"https://openalex.org/keywords/strain-engineering","display_name":"strain engineering","score":0.9049999713897705},{"id":"https://openalex.org/keywords/sige-thin-films","display_name":"SiGe thin films","score":0.5019999742507935},{"id":"https://openalex.org/keywords/high-k-gate-dielectrics","display_name":"high-k gate dielectrics","score":0.5640000104904175}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6730999946594238},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6328999996185303},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.6266000270843506},{"id":"https://openalex.org/C86183883","wikidata":"https://www.wikidata.org/wiki/Q507505","display_name":"Arrhenius equation","level":3,"score":0.6051999926567078},{"id":"https://openalex.org/C148898269","wikidata":"https://www.wikidata.org/wiki/Q1108792","display_name":"Kinetics","level":2,"score":0.5662000179290771},{"id":"https://openalex.org/C2779281663","wikidata":"https://www.wikidata.org/wiki/Q1549368","display_name":"Thermal oxidation","level":3,"score":0.5284000039100647},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.49410000443458557},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.47440001368522644},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4733000099658966},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.46700000762939453},{"id":"https://openalex.org/C74080474","wikidata":"https://www.wikidata.org/wiki/Q7305975","display_name":"Redistribution (election)","level":3,"score":0.3725999891757965},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.3725000023841858},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3668999969959259},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.3407999873161316},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3163999915122986},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.3000999987125397},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.29809999465942383},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.29649999737739563},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.29100000858306885},{"id":"https://openalex.org/C2781204021","wikidata":"https://www.wikidata.org/wiki/Q6497091","display_name":"Lattice (music)","level":2,"score":0.28940001130104065},{"id":"https://openalex.org/C2778022156","wikidata":"https://www.wikidata.org/wiki/Q576145","display_name":"Strain (injury)","level":2,"score":0.28189998865127563},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.2799000144004822},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2786000072956085},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.27799999713897705},{"id":"https://openalex.org/C138999460","wikidata":"https://www.wikidata.org/wiki/Q787619","display_name":"Solid solution","level":2,"score":0.2728999853134155},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.26589998602867126},{"id":"https://openalex.org/C112950240","wikidata":"https://www.wikidata.org/wiki/Q76005","display_name":"Ultimate tensile strength","level":2,"score":0.26499998569488525},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.2538999915122986}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.apsadv.2026.101094","doi":"https://doi.org/10.1016/j.apsadv.2026.101094","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.apsadv.2026.101094","pdf_url":"https://www.sciencedirect.com/science/article/pii/S2666523926001649/pdf","source":{"id":"https://openalex.org/S4210213426","display_name":"Applied Surface Science Advances","issn_l":"2666-5239","issn":["2666-5239"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science Advances","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1016/j.apsadv.2026.101094","doi":"https://doi.org/10.1016/j.apsadv.2026.101094","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.apsadv.2026.101094","pdf_url":"https://www.sciencedirect.com/science/article/pii/S2666523926001649/pdf","source":{"id":"https://openalex.org/S4210213426","display_name":"Applied Surface Science Advances","issn_l":"2666-5239","issn":["2666-5239"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science Advances","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320316512","display_name":"Bpifrance","ror":"https://ror.org/008zkt807"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7225237915.pdf","grobid_xml":"https://content.openalex.org/works/W7225237915.grobid-xml"},"referenced_works_count":33,"referenced_works":["https://openalex.org/W1505040203","https://openalex.org/W1548256084","https://openalex.org/W1985131633","https://openalex.org/W2000357186","https://openalex.org/W2002250716","https://openalex.org/W2008775696","https://openalex.org/W2018577436","https://openalex.org/W2035525257","https://openalex.org/W2037203546","https://openalex.org/W2040670602","https://openalex.org/W2042004883","https://openalex.org/W2046440873","https://openalex.org/W2055435845","https://openalex.org/W2060341668","https://openalex.org/W2069314430","https://openalex.org/W2084846283","https://openalex.org/W2085660037","https://openalex.org/W2086328585","https://openalex.org/W2090318859","https://openalex.org/W2101009001","https://openalex.org/W2131862714","https://openalex.org/W2132715449","https://openalex.org/W2164884503","https://openalex.org/W2237735281","https://openalex.org/W2509344984","https://openalex.org/W2512579076","https://openalex.org/W2728288472","https://openalex.org/W2748787107","https://openalex.org/W2921456273","https://openalex.org/W2923759163","https://openalex.org/W3048027067","https://openalex.org/W6903933416","https://openalex.org/W7127316756"],"related_works":["https://openalex.org/W4240803520","https://openalex.org/W2728288472","https://openalex.org/W2016160406","https://openalex.org/W1980060339","https://openalex.org/W1981024873","https://openalex.org/W2094306779","https://openalex.org/W2032789770","https://openalex.org/W2018584993","https://openalex.org/W2741165381","https://openalex.org/W2991014018"],"abstract_inverted_index":{"Fully":[0],"depleted":[1],"SiGe-on-insulator":[2],"(SGOI)":[3],"structures":[4],"are":[5,43,119,165],"promising":[6],"candidates":[7],"for":[8,25,30,139,143,151,196],"next-generation":[9],"high-performance":[10],"CMOS":[11],"technologies":[12],"where":[13],"strain":[14,24,29],"engineering":[15],"is":[16],"employed":[17],"to":[18],"boost":[19],"carrier":[20],"mobility,":[21],"with":[22,121],"tensile":[23],"nMOS":[26],"and":[27,38,70,78,92,104,148,155,172,188,199],"compressive":[28],"pMOS":[31],"transistors.":[32],"However,":[33],"both":[34],"their":[35],"fabrication":[36],"routes":[37],"the":[39,59,97,109,117,122,126,178,194,202],"underlying":[40],"physical":[41],"mechanisms":[42],"not":[44],"yet":[45],"as":[46,49,84],"well":[47],"established":[48],"in":[50,162],"standard":[51],"Si":[52,83,197],"processing.":[53],"In":[54],"this":[55],"work,":[56],"we":[57],"investigate":[58],"dry":[60],"thermal":[61],"oxidation":[62,100,132,200],"of":[63,75,113,125,135],"thin":[64],"SGOI":[65,144,164],"layers":[66,152],"containing":[67,145,153],"5%,":[68],"15%,":[69],"22%":[71,156],"Ge":[72,102,170,186],"at":[73],"temperatures":[74],"765,":[76],"805,":[77],"895":[79],"\u00b0C,":[80],"using":[81],"pure":[82],"an":[85,173],"experimental":[86],"reference.":[87],"Ellipsometry,":[88],"cross-sectional":[89],"STEM,":[90],"STEM-EDX,":[91],"geometrical":[93],"phase":[94],"analysis":[95,130],"reveal":[96],"relationships":[98],"between":[99],"kinetics,":[101],"redistribution,":[103],"local":[105],"lattice":[106],"deformation.":[107],"Over":[108],"investigated":[110],"oxide-thickness":[111],"range":[112],"approximately":[114,136],"10\u201330":[115],"nm,":[116],"kinetics":[118],"consistent":[120],"parabolic":[123],"regime":[124],"Deal\u2013Grove":[127],"model.":[128],"Arrhenius":[129],"yields":[131],"activation":[133,160],"energies":[134,161],"2.00":[137],"eV":[138,142,150],"Si,":[140],"1.96":[141],"5%":[146],"Ge,":[147],"1.82\u20131.83":[149],"15%":[154],"Ge.":[157],"The":[158],"lower":[159],"Ge-richer":[163],"accompanied":[166],"by":[167],"pronounced":[168],"interfacial":[169],"enrichment":[171],"oxygen":[174,189],"signal":[175],"extending":[176],"throughout":[177],"remaining":[179],"SiGe":[180],"layer.":[181],"These":[182],"observations":[183],"suggest":[184],"that":[185],"redistribution":[187],"incorporation":[190],"may":[191],"jointly":[192],"modify":[193],"conditions":[195],"transport":[198],"within":[201],"oxide/SiGe/oxide":[203],"architecture.":[204]},"counts_by_year":[],"updated_date":"2026-11-06T12:05:46.655746","created_date":"2026-11-05T00:00:00"}