{"id":"https://openalex.org/W7225073796","doi":"https://doi.org/10.1063/5.0349357","title":"Epitaxial growth of Si-doped \u03b2-(In x Ga1\u2212 x )2O3 thin films grown on (010) \u03b2-Ga2O3 substrates via mist chemical vapor deposition","display_name":"Epitaxial growth of Si-doped \u03b2-(In x Ga1\u2212 x )2O3 thin films grown on (010) \u03b2-Ga2O3 substrates via mist chemical vapor deposition","publication_year":2026,"publication_date":"2026-11-02","ids":{"openalex":"https://openalex.org/W7225073796","doi":"https://doi.org/10.1063/5.0349357"},"language":"en","primary_location":{"id":"doi:10.1063/5.0349357","doi":"https://doi.org/10.1063/5.0349357","is_oa":false,"landing_page_url":"https://doi.org/10.1063/5.0349357","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5137427746","display_name":"Aoi Saito","orcid":"https://orcid.org/0009-0008-0695-678X","observed_orcids":["https://orcid.org/0009-0008-0695-678X"]},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Aoi Saito","raw_affiliation_strings":["Department of Electronics, Kyoto Institute of Technology 1 , Kyoto 606-8585,"],"raw_orcid":"https://orcid.org/0009-0008-0695-678X","affiliations":[{"raw_affiliation_string":"Department of Electronics, Kyoto Institute of Technology 1 , Kyoto 606-8585,","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5133453781","display_name":"Giacomo Biasin","orcid":"https://orcid.org/0009-0003-4046-562X","observed_orcids":["https://orcid.org/0009-0003-4046-562X"]},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Giacomo Biasin","raw_affiliation_strings":["Department of Information Engineering, University of Padua 2 , Padua 35131,"],"raw_orcid":"https://orcid.org/0009-0003-4046-562X","affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padua 2 , Padua 35131,","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102852791","display_name":"Shoma Hosaka","orcid":"https://orcid.org/0009-0001-5609-1410","observed_orcids":["https://orcid.org/0009-0001-5609-1410"]},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shoma Hosaka","raw_affiliation_strings":["Department of Electronics, Kyoto Institute of Technology 1 , Kyoto 606-8585,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, Kyoto Institute of Technology 1 , Kyoto 606-8585,","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110143881","display_name":"Hiroki Miyake","orcid":"https://orcid.org/0009-0004-8111-2414","observed_orcids":["https://orcid.org/0009-0004-8111-2414"]},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]},{"id":"https://openalex.org/I4405265403","display_name":"Mirise Technologies Corporation (Japan)","ror":"https://ror.org/04pm66810","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405265403"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroki Miyake","raw_affiliation_strings":["Kyoto Semiconductor Co-Creation Lab, Center for the Possible Future, Kyoto Institute of Technology 3 , Kyoto 606-8585,","Power Electronics R&D Div. 2, MIRISE Technologies Corporation 4 , Aichi 470-0309,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyoto Semiconductor Co-Creation Lab, Center for the Possible Future, Kyoto Institute of Technology 3 , Kyoto 606-8585,","institution_ids":["https://openalex.org/I27429435"]},{"raw_affiliation_string":"Power Electronics R&D Div. 2, MIRISE Technologies Corporation 4 , Aichi 470-0309,","institution_ids":["https://openalex.org/I4405265403"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059611177","display_name":"Matteo Meneghini","orcid":"https://orcid.org/0000-0003-2421-505X","observed_orcids":["https://orcid.org/0000-0003-2421-505X"]},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Matteo Meneghini","raw_affiliation_strings":["Department of Information Engineering, University of Padua 2 , Padua 35131,","Department of Physics and Astronomy, University of Padua 5 , Padua 35131,"],"raw_orcid":"https://orcid.org/0000-0003-2421-505X","affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padua 2 , Padua 35131,","institution_ids":["https://openalex.org/I138689650"]},{"raw_affiliation_string":"Department of Physics and Astronomy, University of Padua 5 , Padua 35131,","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053751924","display_name":"Hiroyuki Nishinaka","orcid":"https://orcid.org/0000-0003-1878-0765","observed_orcids":["https://orcid.org/0000-0003-1878-0765"]},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Hiroyuki Nishinaka","raw_affiliation_strings":["Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology 6 , Kyoto 606-8585,"],"raw_orcid":"https://orcid.org/0000-0003-1878-0765","affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology 6 , Kyoto 606-8585,","institution_ids":["https://openalex.org/I27429435"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5053751924","https://openalex.org/A5137427746"],"corresponding_institution_ids":["https://openalex.org/I27429435"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.64197009,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"140","issue":"17","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3-substrate","display_name":"\u03b2-Ga2O3 substrate","score":0.9169999957084656},{"id":"https://openalex.org/keywords/silicon-doping","display_name":"silicon doping","score":0.828000009059906},{"id":"https://openalex.org/keywords/mist-chemical-vapor-deposition","display_name":"mist chemical vapor deposition","score":0.843999981880188},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.9490000009536743},{"id":"https://openalex.org/keywords/strain-relaxation","display_name":"strain relaxation","score":0.9610000252723694},{"id":"https://openalex.org/keywords/indium-content","display_name":"indium content","score":0.796999990940094},{"id":"https://openalex.org/keywords/hall-mobility","display_name":"Hall mobility","score":0.6079999804496765},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.7749999761581421},{"id":"https://openalex.org/keywords/alloy-scattering","display_name":"alloy scattering","score":0.8050000071525574},{"id":"https://openalex.org/keywords/ionized-impurity-scattering","display_name":"ionized impurity scattering","score":0.9369999766349792},{"id":"https://openalex.org/keywords/degenerate-semiconductors","display_name":"degenerate semiconductors","score":0.5979999899864197},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.5360000133514404},{"id":"https://openalex.org/keywords/crystallinity","display_name":"crystallinity","score":0.6069999933242798}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7462999820709229},{"id":"https://openalex.org/C134112204","wikidata":"https://www.wikidata.org/wiki/Q10656","display_name":"Hall effect","level":3,"score":0.6704999804496765},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.6588000059127808},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.6547999978065491},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.6036999821662903},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5785999894142151},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5198000073432922},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5041999816894531},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.49799999594688416},{"id":"https://openalex.org/C40417578","wikidata":"https://www.wikidata.org/wiki/Q902646","display_name":"Degenerate semiconductor","level":3,"score":0.45809999108314514},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.45019999146461487},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4293000102043152},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.39399999380111694},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.38119998574256897},{"id":"https://openalex.org/C18136748","wikidata":"https://www.wikidata.org/wiki/Q6063729","display_name":"Ionized impurity scattering","level":3,"score":0.37770000100135803},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.3528999984264374},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.3382999897003174},{"id":"https://openalex.org/C202974441","wikidata":"https://www.wikidata.org/wiki/Q2576844","display_name":"Stress relaxation","level":3,"score":0.3337000012397766},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.3208000063896179},{"id":"https://openalex.org/C2776029896","wikidata":"https://www.wikidata.org/wiki/Q3935810","display_name":"Relaxation (psychology)","level":2,"score":0.31470000743865967},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.29919999837875366},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.29679998755455017},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.2897999882698059},{"id":"https://openalex.org/C50515024","wikidata":"https://www.wikidata.org/wiki/Q826582","display_name":"X-ray crystallography","level":3,"score":0.2824000120162964},{"id":"https://openalex.org/C2780026712","wikidata":"https://www.wikidata.org/wiki/Q37756","display_name":"Alloy","level":2,"score":0.2784000039100647},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2653999924659729},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.257099986076355},{"id":"https://openalex.org/C7515221","wikidata":"https://www.wikidata.org/wiki/Q2252683","display_name":"Weak localization","level":4,"score":0.2565999925136566},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.25609999895095825}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/5.0349357","doi":"https://doi.org/10.1063/5.0349357","is_oa":false,"landing_page_url":"https://doi.org/10.1063/5.0349357","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320338248","display_name":"Fusion Oriented REsearch for disruptive Science and Technology","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":49,"referenced_works":["https://openalex.org/W1644480616","https://openalex.org/W2019468267","https://openalex.org/W2050344902","https://openalex.org/W2116051320","https://openalex.org/W2167590372","https://openalex.org/W2277773154","https://openalex.org/W2327609958","https://openalex.org/W2509570769","https://openalex.org/W2518552143","https://openalex.org/W2534652803","https://openalex.org/W2536374077","https://openalex.org/W2547669936","https://openalex.org/W2551166540","https://openalex.org/W2564475872","https://openalex.org/W2573946860","https://openalex.org/W2606782229","https://openalex.org/W2724601299","https://openalex.org/W2731908363","https://openalex.org/W2765432045","https://openalex.org/W2783668429","https://openalex.org/W2794819725","https://openalex.org/W2801124635","https://openalex.org/W2805819663","https://openalex.org/W2807449591","https://openalex.org/W2811508034","https://openalex.org/W2894790801","https://openalex.org/W2908721773","https://openalex.org/W2911675874","https://openalex.org/W2920008173","https://openalex.org/W2921895053","https://openalex.org/W2944903687","https://openalex.org/W2972099462","https://openalex.org/W3011715243","https://openalex.org/W3033981039","https://openalex.org/W3040078536","https://openalex.org/W3042514039","https://openalex.org/W3104323234","https://openalex.org/W3116898399","https://openalex.org/W4200203109","https://openalex.org/W4281745406","https://openalex.org/W4313537224","https://openalex.org/W4319459901","https://openalex.org/W4391113162","https://openalex.org/W4392283237","https://openalex.org/W4393385860","https://openalex.org/W4401559291","https://openalex.org/W4403456054","https://openalex.org/W4406660001","https://openalex.org/W4408790908"],"related_works":["https://openalex.org/W4408790908","https://openalex.org/W4223422960","https://openalex.org/W4403893658","https://openalex.org/W2789441117","https://openalex.org/W7134175462","https://openalex.org/W3104323234","https://openalex.org/W4403456054","https://openalex.org/W4380894036","https://openalex.org/W2547669936","https://openalex.org/W4391113162"],"abstract_inverted_index":{"In":[0,21,71,107,124,186],"this":[1],"study,":[2],"Si-doped":[3],"\u03b2-(InxGa1\u2212x)2O3":[4],"thin":[5,196],"films":[6,50,197],"were":[7],"grown":[8,49],"on":[9,26,145,188],"(010)":[10],"\u03b2-Ga2O3":[11],"substrates":[12],"by":[13],"mist":[14],"chemical":[15],"vapor":[16],"deposition.":[17],"The":[18],"influence":[19,184],"of":[20,139,162,175,185,194],"composition":[22,108,187],"and":[23,29,41,54,77,95,113,154,191,198],"strain":[24,67],"relaxation":[25,68],"the":[27,140,163,183,189],"structural":[28,190],"electron":[30],"transport":[31],"properties":[32,193],"was":[33],"investigated":[34],"for":[35,159,202],"\u03b2-Ga2O3-based":[36,203],"heterostructure":[37,205],"applications.":[38],"X-ray":[39],"diffraction":[40],"atomic":[42],"force":[43],"microscopy":[44],"measurements":[45,82,128],"revealed":[46,129],"that":[47,84,149],"coherently":[48],"maintained":[51],"high":[52,70],"crystallinity":[53,76],"smooth":[55],"surfaces":[56],"with":[57,105,122,133,171],"root":[58],"mean":[59],"square":[60],"roughness":[61],"values":[62],"below":[63],"1":[64],"nm,":[65],"whereas":[66],"at":[69,168],"compositions":[72],"significantly":[73],"degraded":[74],"both":[75,92],"surface":[78],"flatness.":[79],"Hall":[80,102,127,142],"effect":[81],"demonstrated":[83],"Si":[85],"doping":[86],"enabled":[87],"carrier":[88,111,136],"concentration":[89,112],"control":[90],"under":[91],"coherent":[93,99],"growth":[94,100],"strain-relaxed":[96],"conditions.":[97],"Under":[98],"conditions,":[101],"mobility":[103,143,174],"decreased":[104],"increasing":[106],"despite":[109],"comparable":[110],"crystalline":[114],"quality,":[115],"suggesting":[116],"enhanced":[117],"alloy":[118,155],"disorder":[119,156],"scattering":[120,151,165],"associated":[121],"random":[123],"substitution.":[125],"Temperature-dependent":[126],"degenerate":[130],"semiconductor":[131],"behavior":[132],"nearly":[134],"temperature-independent":[135,150],"concentration.":[137],"Analysis":[138],"temperature-dependent":[141],"based":[144],"Matthiessen\u2019s":[146],"rule":[147],"showed":[148],"(ionized":[152],"impurity":[153],"scattering)":[157],"accounts":[158],"approximately":[160,176],"80%":[161],"total":[164],"rate":[166],"even":[167],"300":[169],"K,":[170],"a":[172],"phonon-limited":[173],"240":[177],"cm2/V":[178],"s.":[179],"These":[180],"findings":[181],"clarify":[182],"electrical":[192],"\u03b2-InGaO":[195],"provide":[199],"important":[200],"insights":[201],"high-electron-mobility":[204],"devices.":[206]},"counts_by_year":[],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2026-11-03T00:00:00"}