{"id":"https://openalex.org/W7224206299","doi":"https://doi.org/10.1038/s41598-026-77415-7","title":"Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs","display_name":"Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs","publication_year":2026,"publication_date":"2026-10-29","ids":{"openalex":"https://openalex.org/W7224206299","doi":"https://doi.org/10.1038/s41598-026-77415-7"},"language":"en","primary_location":{"id":"doi:10.1038/s41598-026-77415-7","doi":"https://doi.org/10.1038/s41598-026-77415-7","is_oa":true,"landing_page_url":"https://doi.org/10.1038/s41598-026-77415-7","pdf_url":"https://www.nature.com/articles/s41598-026-77415-7_reference.pdf","source":{"id":"https://openalex.org/S196734849","display_name":"Scientific Reports","issn_l":"2045-2322","issn":["2045-2322"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","doaj","dongbi-c","doyens","jufo-1","ki-jl-1","medline","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310319908","host_organization_name":"Nature Portfolio","host_organization_lineage":["https://openalex.org/P4310319908","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Nature Portfolio","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Scientific Reports","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.nature.com/articles/s41598-026-77415-7_reference.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029422548","display_name":"Md Akram Ahmad","orcid":"https://orcid.org/0000-0003-2209-3773","observed_orcids":["https://orcid.org/0000-0003-2209-3773"]},"institutions":[{"id":"https://openalex.org/I155125381","display_name":"Galgotias University","ror":"https://ror.org/02w8ba206","country_code":"IN","type":"education","lineage":["https://openalex.org/I155125381"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Md Akram Ahmad","raw_affiliation_strings":["Department of Electrical, Electronics & Communication Engineering, Galgotias University, Greater Noida, India"],"raw_orcid":"https://orcid.org/0000-0003-2209-3773","affiliations":[{"raw_affiliation_string":"Department of Electrical, Electronics & Communication Engineering, Galgotias University, Greater Noida, India","institution_ids":["https://openalex.org/I155125381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058154038","display_name":"Muzaffar Imam","orcid":"https://orcid.org/0000-0001-8202-1005","observed_orcids":["https://orcid.org/0000-0001-8202-1005"]},"institutions":[{"id":"https://openalex.org/I19716509","display_name":"Jamia Hamdard","ror":"https://ror.org/03dwxvb85","country_code":"IN","type":"education","lineage":["https://openalex.org/I19716509"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Muzaffar Imam","raw_affiliation_strings":["Department of Computer Science and Engineering, Jamia Hamdard, New Delhi, India"],"raw_orcid":"https://orcid.org/0000-0001-8202-1005","affiliations":[{"raw_affiliation_string":"Department of Computer Science and Engineering, Jamia Hamdard, New Delhi, India","institution_ids":["https://openalex.org/I19716509"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037388439","display_name":"Bhubon Chandra Mech","orcid":"https://orcid.org/0000-0002-4406-6007","observed_orcids":["https://orcid.org/0000-0002-4406-6007"]},"institutions":[{"id":"https://openalex.org/I156406944","display_name":"Defence Institute of Advanced Technology","ror":"https://ror.org/05qpbfx18","country_code":"IN","type":"education","lineage":["https://openalex.org/I156406944"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Bhubon Chandra Mech","raw_affiliation_strings":["Department of Electronics Engineering, Defence Institute of Advanced Technology, Pune, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Defence Institute of Advanced Technology, Pune, India","institution_ids":["https://openalex.org/I156406944"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083366406","display_name":"Syed Sadique Anwer Askari","orcid":"https://orcid.org/0000-0003-1562-0969","observed_orcids":["https://orcid.org/0000-0003-1562-0969"]},"institutions":[{"id":"https://openalex.org/I171210897","display_name":"Aligarh Muslim University","ror":"https://ror.org/03kw9gc02","country_code":"IN","type":"education","lineage":["https://openalex.org/I171210897"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Syed Sadique Anwer Askari","raw_affiliation_strings":["Electronics Engineering Section, University Women\u2019s Polytechnic, Aligarh, Aligarh Muslim University, Aligarh, Uttar Pradesh, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Engineering Section, University Women\u2019s Polytechnic, Aligarh, Aligarh Muslim University, Aligarh, Uttar Pradesh, India","institution_ids":["https://openalex.org/I171210897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016999286","display_name":"Meenakshi Awasthi","orcid":"https://orcid.org/0000-0003-1016-2284","observed_orcids":["https://orcid.org/0000-0003-1016-2284"]},"institutions":[{"id":"https://openalex.org/I155125381","display_name":"Galgotias University","ror":"https://ror.org/02w8ba206","country_code":"IN","type":"education","lineage":["https://openalex.org/I155125381"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Meenakshi Awasthi","raw_affiliation_strings":["Department of Electrical, Electronics & Communication Engineering, Galgotias University, Greater Noida, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical, Electronics & Communication Engineering, Galgotias University, Greater Noida, India","institution_ids":["https://openalex.org/I155125381"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045929648","display_name":"Vakkalakula Bharath Sreenivasulu","orcid":"https://orcid.org/0000-0003-3064-1522","observed_orcids":["https://orcid.org/0000-0003-3064-1522","https://orcid.org/0009-0004-0182-3057"]},"institutions":[{"id":"https://openalex.org/I164861460","display_name":"Manipal Academy of Higher Education","ror":"https://ror.org/02xzytt36","country_code":"IN","type":"education","lineage":["https://openalex.org/I164861460"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"V. Bharath Sreenivasulu","raw_affiliation_strings":["Manipal Institute of Technology Bengaluru, Manipal Academy of Higher Education, Manipal, India"],"raw_orcid":"https://orcid.org/0009-0004-0182-3057","affiliations":[{"raw_affiliation_string":"Manipal Institute of Technology Bengaluru, Manipal Academy of Higher Education, Manipal, India","institution_ids":["https://openalex.org/I164861460"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5029422548","https://openalex.org/A5045929648"],"corresponding_institution_ids":["https://openalex.org/I155125381","https://openalex.org/I164861460"],"apc_list":{"value":2690,"currency":"USD","value_usd":2690},"apc_paid":{"value":2690,"currency":"USD","value_usd":2690},"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.67914899,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.021900000050663948,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mos2","display_name":"MoS2","score":0.7689999938011169},{"id":"https://openalex.org/keywords/mose2","display_name":"MoSe2","score":1.0},{"id":"https://openalex.org/keywords/tungsten-disulfide","display_name":"tungsten disulfide","score":0.9959999918937683},{"id":"https://openalex.org/keywords/high-k-gate-dielectrics","display_name":"high-k gate dielectrics","score":0.9100000262260437},{"id":"https://openalex.org/keywords/rf-linearity","display_name":"RF linearity","score":0.9089999794960022},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.8809999823570251},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.7200000286102295},{"id":"https://openalex.org/keywords/quality-factor","display_name":"quality factor","score":0.7680000066757202},{"id":"https://openalex.org/keywords/analog-performance","display_name":"analog performance","score":0.453000009059906}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.9445000290870667},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.8467000126838684},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7197999954223633},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6022999882698059},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.5838000178337097},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5723000168800354},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5271999835968018},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.38850000500679016},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.38659998774528503},{"id":"https://openalex.org/C126780896","wikidata":"https://www.wikidata.org/wiki/Q899871","display_name":"Distortion (music)","level":4,"score":0.3488999903202057},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.34279999136924744},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.3398999869823456},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32330000400543213},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.314300000667572},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.30309998989105225},{"id":"https://openalex.org/C11773624","wikidata":"https://www.wikidata.org/wiki/Q2142232","display_name":"Intermodulation","level":4,"score":0.2939000129699707},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.29249998927116394},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.28839999437332153},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2879999876022339},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.2750000059604645},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.25029999017715454}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1038/s41598-026-77415-7","doi":"https://doi.org/10.1038/s41598-026-77415-7","is_oa":true,"landing_page_url":"https://doi.org/10.1038/s41598-026-77415-7","pdf_url":"https://www.nature.com/articles/s41598-026-77415-7_reference.pdf","source":{"id":"https://openalex.org/S196734849","display_name":"Scientific Reports","issn_l":"2045-2322","issn":["2045-2322"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","doaj","dongbi-c","doyens","jufo-1","ki-jl-1","medline","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310319908","host_organization_name":"Nature Portfolio","host_organization_lineage":["https://openalex.org/P4310319908","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Nature Portfolio","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Scientific Reports","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1038/s41598-026-77415-7","doi":"https://doi.org/10.1038/s41598-026-77415-7","is_oa":true,"landing_page_url":"https://doi.org/10.1038/s41598-026-77415-7","pdf_url":"https://www.nature.com/articles/s41598-026-77415-7_reference.pdf","source":{"id":"https://openalex.org/S196734849","display_name":"Scientific Reports","issn_l":"2045-2322","issn":["2045-2322"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","doaj","dongbi-c","doyens","jufo-1","ki-jl-1","medline","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310319908","host_organization_name":"Nature Portfolio","host_organization_lineage":["https://openalex.org/P4310319908","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Nature Portfolio","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Scientific Reports","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7224206299.pdf","grobid_xml":"https://content.openalex.org/works/W7224206299.grobid-xml"},"referenced_works_count":38,"referenced_works":["https://openalex.org/W876147633","https://openalex.org/W1868638423","https://openalex.org/W1912205236","https://openalex.org/W1969421769","https://openalex.org/W2001894083","https://openalex.org/W2021994802","https://openalex.org/W2039086015","https://openalex.org/W2057776377","https://openalex.org/W2060821504","https://openalex.org/W2071012964","https://openalex.org/W2080344609","https://openalex.org/W2115631148","https://openalex.org/W2142162177","https://openalex.org/W2146588215","https://openalex.org/W2513028139","https://openalex.org/W2735306492","https://openalex.org/W2765336661","https://openalex.org/W2910032079","https://openalex.org/W2944265399","https://openalex.org/W2993687996","https://openalex.org/W3015460191","https://openalex.org/W3092779866","https://openalex.org/W3100958316","https://openalex.org/W3119675150","https://openalex.org/W3135564274","https://openalex.org/W3138542305","https://openalex.org/W3160045927","https://openalex.org/W3177081779","https://openalex.org/W4206940610","https://openalex.org/W4296286882","https://openalex.org/W4379142249","https://openalex.org/W4386054080","https://openalex.org/W4386135450","https://openalex.org/W4390659287","https://openalex.org/W4391735370","https://openalex.org/W4396611059","https://openalex.org/W4404035726","https://openalex.org/W7134812126"],"related_works":["https://openalex.org/W2606749069","https://openalex.org/W2735306492","https://openalex.org/W2773867118","https://openalex.org/W4405753616","https://openalex.org/W4383343433","https://openalex.org/W2940961045","https://openalex.org/W7172551438","https://openalex.org/W4405180521","https://openalex.org/W7117276899","https://openalex.org/W4403483375"],"abstract_inverted_index":{"Abstract":[0],"This":[1],"work":[2],"investigates":[3],"the":[4,11,159,165,184],"influence":[5],"of":[6,17,53,161,167],"gate":[7,49,137,175],"dielectric":[8,54],"engineering":[9],"on":[10,56],"analog,":[12],"RF,":[13],"and":[14,42,73,120,154,170,192,211,227],"linearity":[15,75,181],"performance":[16,194],"transition":[18],"metal":[19],"dichalcogenide":[20],"field-effect":[21],"transistors":[22],"(TMD-FETs).":[23],"A":[24],"self-consistent":[25],"non-equilibrium":[26],"Green\u2019s":[27],"function":[28],"(NEGF)-based":[29],"simulation":[30],"framework":[31],"is":[32,77],"employed":[33],"to":[34],"analyze":[35],"MoS":[36,197],"2":[37,40,198],"-,":[38,41],"MoSe":[39],"WS\u2082-based":[43,187],"FETs":[44,188],"integrated":[45],"with":[46],"different":[47],"high-k":[48,133,162],"dielectrics.":[50],"The":[51,129,214],"impact":[52],"materials":[55],"electrostatic":[57,138],"integrity,":[58],"carrier":[59],"transport,":[60],"transistor":[61],"efficiency":[62],"(":[63,86,92,99,110,116,123],"g":[64,111,117,124,148,168,171],"m":[65,112,149],"/":[66,102,150],"I":[67,87,93,100,103,151],"D":[68,152],"),":[69,89,95,105,113,119],"quality":[70],"factor":[71],"(Q-factor),":[72],"RF":[74,180,193],"metrics":[76],"systematically":[78],"examined.":[79],"Key":[80],"device":[81],"parameters":[82],"including":[83],"ON":[84,88,101],"current":[85,91,96],"OFF":[90,94,104],"ON/OFF":[97],"ratio":[98],"subthreshold":[106],"swing":[107],"(SS),":[108],"transconductance":[109,115,122,191],"second-order":[114],"m2":[118,169],"third-order":[121],"m3":[125,172],")":[126],"are":[127],"evaluated.":[128],"results":[130],"demonstrate":[131],"that":[132],"dielectrics":[134,163],"significantly":[135],"enhance":[136],"control,":[139],"resulting":[140],"in":[141,223],"improved":[142,178],"ON-state":[143],"current,":[144],"reduced":[145],"SS,":[146],"enhanced":[147],"efficiency,":[153,207],"superior":[155,190],"Q-factor":[156],"characteristics.":[157,213],"Furthermore,":[158],"use":[160],"shifts":[164],"peaks":[166],"toward":[173],"lower":[174],"voltages,":[176],"indicating":[177],"low-voltage":[179],"behavior.":[182],"Among":[183],"investigated":[185],"materials,":[186],"exhibit":[189],"characteristics,":[195],"while":[196],"-based":[199],"devices":[200],"provide":[201],"an":[202],"excellent":[203],"trade-off":[204],"between":[205],"power":[206],"nonlinear":[208],"distortion":[209],"behavior,":[210],"analog/RF":[212],"findings":[215],"offer":[216],"essential":[217],"insights":[218],"for":[219],"optimizing":[220],"dielectric\u2013channel":[221],"combinations":[222],"next-generation":[224],"low-power,":[225],"high-linearity,":[226],"RF-oriented":[228],"nanoelectronic":[229],"devices.":[230]},"counts_by_year":[],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2026-10-30T00:00:00"}