{"id":"https://openalex.org/W7221829965","doi":"https://doi.org/10.48550/arxiv.2610.14322","title":"A Solution-Processed Ti/Pt/NiOx/Ag RRAM Device with Multiple Forming-Free Non-Volatile Intermediate States","display_name":"A Solution-Processed Ti/Pt/NiOx/Ag RRAM Device with Multiple Forming-Free Non-Volatile Intermediate States","publication_year":2026,"publication_date":"2026-10-09","ids":{"openalex":"https://openalex.org/W7221829965","doi":"https://doi.org/10.48550/arxiv.2610.14322"},"language":"en","primary_location":{"id":"pmh:oai:arXiv.org:2610.14322","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2610.14322","pdf_url":"https://arxiv.org/pdf/2610.14322","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"volume":null,"type":"preprint","is_traditional":true,"indexed_in":["arxiv","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2610.14322","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084670366","display_name":"Abhrajit Roy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Roy, Abhrajit","raw_affiliation_strings":["Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009340514","display_name":"Chopali Chanchal Sahu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sahu, Chopali Chanchal","raw_affiliation_strings":["Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5120389281","display_name":"Rudraksh Sangore","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sangore, Rudraksh","raw_affiliation_strings":["Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088521827","display_name":"Raman Hissariya","orcid":"https://orcid.org/0000-0003-2607-7017","observed_orcids":["https://orcid.org/0000-0003-2607-7017"]},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Hissariya, Raman","raw_affiliation_strings":["Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069071870","display_name":"Poulomi Chakrabarty","orcid":"https://orcid.org/0000-0002-4127-9090","observed_orcids":["https://orcid.org/0000-0002-4127-9090"]},"institutions":[{"id":"https://openalex.org/I4405255682","display_name":"Shiv Nadar University, Chennai","ror":"https://ror.org/039rg7508","country_code":"IN","type":"education","lineage":["https://openalex.org/I4405255682"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Chakrabarty, Poulomi","raw_affiliation_strings":["Department of Computer Science and Engineering , Shiv Nadar University Chennai , Kalavakkam , Tamil Nadu 603110 , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Computer Science and Engineering , Shiv Nadar University Chennai , Kalavakkam , Tamil Nadu 603110 , India","institution_ids":["https://openalex.org/I4405255682"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5158713704","display_name":"Harsh Roniyar","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Roniyar, Harsh","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104072516","display_name":"Merlyne De Souza","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"De Souza, Merlyne","raw_affiliation_strings":["School of Electrical and Electronic Engineering , The University of Sheffield , Western Bank , Sheffield , S10 2TN , United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering , The University of Sheffield , Western Bank , Sheffield , S10 2TN , United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047814135","display_name":"Debanjan Bhowmik","orcid":"https://orcid.org/0000-0003-1136-8778","observed_orcids":["https://orcid.org/0000-0003-1136-8778"]},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Bhowmik, Debanjan","raw_affiliation_strings":["Centre for Semiconductor Technologies (SemiX) , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Semiconductor Technologies (SemiX) , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","institution_ids":["https://openalex.org/I162827531"]},{"raw_affiliation_string":"Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , Maharashtra 400076 , India","institution_ids":["https://openalex.org/I162827531"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12611","display_name":"Neural Networks and Reservoir Computing","score":0.0,"subfield":{"id":"https://openalex.org/subfields/1702","display_name":"Artificial Intelligence"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"resistive random access memory","score":0.9819999933242798},{"id":"https://openalex.org/keywords/nickel-oxide","display_name":"nickel oxide","score":0.781000018119812},{"id":"https://openalex.org/keywords/forming-free-switching","display_name":"forming-free switching","score":0.8539999723434448},{"id":"https://openalex.org/keywords/artificial-synapses","display_name":"artificial synapses","score":0.4790000021457672},{"id":"https://openalex.org/keywords/neural-network","display_name":"artificial neural networks","score":0.7680000066757202},{"id":"https://openalex.org/keywords/crossbar-arrays","display_name":"crossbar arrays","score":0.8899999856948853},{"id":"https://openalex.org/keywords/long-term-potentiation","display_name":"long-term potentiation","score":0.8970000147819519},{"id":"https://openalex.org/keywords/long-term-depression","display_name":"long-term depression","score":1.0},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.6639999747276306},{"id":"https://openalex.org/keywords/synaptic-weight-storage","display_name":"synaptic weight storage","score":0.5870000123977661},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.5350000262260437},{"id":"https://openalex.org/keywords/image-classification","display_name":"image classification","score":0.3490000069141388}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.7901999950408936},{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.7753999829292297},{"id":"https://openalex.org/C66949984","wikidata":"https://www.wikidata.org/wiki/Q7662043","display_name":"Synaptic weight","level":3,"score":0.7028999924659729},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.6990000009536743},{"id":"https://openalex.org/C190502265","wikidata":"https://www.wikidata.org/wiki/Q17069496","display_name":"MNIST database","level":3,"score":0.6751000285148621},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5425000190734863},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5418000221252441},{"id":"https://openalex.org/C60908668","wikidata":"https://www.wikidata.org/wiki/Q690207","display_name":"Perceptron","level":3,"score":0.5224000215530396},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.5013999938964844},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4715000092983246},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.46889999508857727},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.45019999146461487},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.43860000371932983},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4180999994277954},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4075999855995178},{"id":"https://openalex.org/C123593499","wikidata":"https://www.wikidata.org/wiki/Q6008583","display_name":"In-Memory Processing","level":5,"score":0.3903000056743622},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.3598000109195709},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3334999978542328},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3249000012874603},{"id":"https://openalex.org/C45347329","wikidata":"https://www.wikidata.org/wiki/Q5166604","display_name":"Convolution (computer science)","level":3,"score":0.31859999895095825},{"id":"https://openalex.org/C48372109","wikidata":"https://www.wikidata.org/wiki/Q3913","display_name":"Binary number","level":2,"score":0.31790000200271606},{"id":"https://openalex.org/C50942859","wikidata":"https://www.wikidata.org/wiki/Q4967193","display_name":"Rectification","level":3,"score":0.29910001158714294},{"id":"https://openalex.org/C82178898","wikidata":"https://www.wikidata.org/wiki/Q166839","display_name":"Voltage drop","level":3,"score":0.2928999960422516},{"id":"https://openalex.org/C11731999","wikidata":"https://www.wikidata.org/wiki/Q9067355","display_name":"Spiking neural network","level":3,"score":0.29030001163482666},{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.28450000286102295},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.27410000562667847},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2563000023365021},{"id":"https://openalex.org/C179717631","wikidata":"https://www.wikidata.org/wiki/Q2991667","display_name":"Multilayer perceptron","level":3,"score":0.251800000667572}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:arXiv.org:2610.14322","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2610.14322","pdf_url":"https://arxiv.org/pdf/2610.14322","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.2610.14322","doi":"https://doi.org/10.48550/arxiv.2610.14322","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2610.14322","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2610.14322","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2610.14322","pdf_url":"https://arxiv.org/pdf/2610.14322","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7221829965.pdf","grobid_xml":"https://content.openalex.org/works/W7221829965.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4281610117","https://openalex.org/W3216759810","https://openalex.org/W4416395456","https://openalex.org/W3135044646","https://openalex.org/W4200567584","https://openalex.org/W7204688511","https://openalex.org/W3159753438","https://openalex.org/W4312127995","https://openalex.org/W4312211551","https://openalex.org/W2970401101"],"abstract_inverted_index":{"Artificial":[0],"neural":[1,230],"networks":[2],"(ANN)":[3],"implemented":[4,22],"on":[5,23,34,163,215],"crossbar":[6,151,188],"arrays":[7],"of":[8,44,124,146,197,240,252],"non-volatile":[9],"synaptic":[10,41,112,120,147,237],"devices":[11,32,42,60],"are":[12,37,127,244],"known":[13],"to":[14,20,129,135,171],"consume":[15],"much":[16],"less":[17],"energy":[18],"compared":[19],"that":[21],"conventional":[24],"computing":[25],"units.":[26],"Solution-processed":[27],"resistive":[28],"random-access":[29],"memory":[30],"(RRAM)":[31],"based":[33],"transition-metal":[35],"oxides":[36],"suitable":[38,53],"as":[39,63,69,97,99],"such":[40],"because":[43],"their":[45,139,142],"cheap":[46],"and":[47,52,67,91,116,141,165,185,217,227],"easy":[48],"fabrication":[49],"method,":[50],"stability,":[51],"memristive":[54],"properties.":[55],"Here,":[56],"in":[57,144,200],"NiO-based":[58],"RRAM":[59,167,255],"with":[61],"Ti/Pt":[62],"the":[64,70,154,179,187,195,236,247,253],"bottom":[65],"electrode":[66,72],"Ag":[68],"top":[71],"(NiO":[73],"layer":[74],"deposited":[75],"through":[76,109],"solution":[77],"processing),":[78],"we":[79,193,210],"experimentally":[80,248],"report":[81],"forming-free":[82,100],"binary":[83],"switching":[84],"between":[85,114],"a":[86,92,222,228],"high":[87,182],"resistance":[88,94],"state":[89,95],"(HRS)":[90],"low":[93],"(LRS)":[96],"well":[98],"pulse-driven":[101],"modulation":[102],"(long-term":[103],"potentiation":[104],"(LTP),":[105],"long-term":[106],"depression":[107],"(LTD))":[108],"30":[110],"intermediate":[111],"states":[113,126],"HRS":[115],"LRS":[117],"(around":[118],"5-bit":[119],"weight":[121,238],"resolution).":[122],"Many":[123],"these":[125,241],"measured":[128,249],"be":[130],"stable":[131],"at":[132],"least":[133],"up":[134],"1000":[136],"seconds":[137],"confirming":[138],"non-volatility":[140],"utility":[143],"storage":[145],"weights":[148],"for":[149,181],"ANN":[150,242],"arrays.":[152],"On":[153],"contrary,":[155],"most":[156],"prior":[157],"experimental":[158],"reports":[159,161],"(including":[160],"both":[162],"solution-processing-based":[164],"sputtering-based":[166],"devices)":[168],"require":[169],"forming":[170,175],"exhibit":[172],"non-volatility.":[173],"Avoiding":[174],"reduces":[176],"variability,":[177],"eliminates":[178],"need":[180],"voltage":[183],"pulses,":[184],"makes":[186],"array":[189],"design":[190],"simpler.":[191],"Further,":[192],"confirm":[194],"presence":[196],"oxygen":[198],"vacancies":[199],"our":[201],"materials":[202],"stack":[203],"using":[204,221],"X-ray":[205],"photo-electron":[206],"spectroscopy":[207],"(XPS).":[208],"Finally,":[209],"show":[211],"successful":[212],"data":[213,219],"classification":[214],"MNIST":[216],"CIFAR-10":[218],"sets":[220],"multi-layer":[223],"perceptron":[224],"(MLP)":[225],"model":[226,233],"convolution":[229],"network":[231],"(CNN)":[232],"respectively,":[234],"where":[235],"updates":[239],"models":[243],"calibrated":[245],"against":[246],"LTP-LTD":[250],"characteristics":[251],"NiO":[254],"devices.":[256]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2026-10-15T00:00:00"}