{"id":"https://openalex.org/W7214729235","doi":"https://doi.org/10.1109/led.2026.3738351","title":"In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with < 10 \u221222 A Leakage Determined by Single-Electron Counting","display_name":"In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with < 10 \u221222 A Leakage Determined by Single-Electron Counting","publication_year":2026,"publication_date":"2026-01-01","ids":{"openalex":"https://openalex.org/W7214729235","doi":"https://doi.org/10.1109/led.2026.3738351"},"language":"en","primary_location":{"id":"doi:10.1109/led.2026.3738351","doi":"https://doi.org/10.1109/led.2026.3738351","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2026.3738351","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["arxiv","crossref","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2609.32122","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047067784","display_name":"Katsuhiko Nishiguchi","orcid":"https://orcid.org/0000-0002-1233-4927","observed_orcids":["https://orcid.org/0000-0002-1233-4927"]},"institutions":[{"id":"https://openalex.org/I180203408","display_name":"Yokohama National University","ror":"https://ror.org/03zyp6p76","country_code":"JP","type":"education","lineage":["https://openalex.org/I180203408"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsuhiko Nishiguchi","raw_affiliation_strings":["Yokohama National University"],"raw_orcid":"https://orcid.org/0000-0002-1233-4927","affiliations":[{"raw_affiliation_string":"Yokohama National University","institution_ids":["https://openalex.org/I180203408"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010152323","display_name":"T. Hayashi","orcid":"https://orcid.org/0000-0002-3814-0047","observed_orcids":["https://orcid.org/0000-0002-3814-0047"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiaki Hayashi","raw_affiliation_strings":["NTT Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Inc","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066437203","display_name":"Kensaku Chida","orcid":"https://orcid.org/0000-0003-0243-6126","observed_orcids":["https://orcid.org/0000-0003-0243-6126"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kensaku Chida","raw_affiliation_strings":["NTT Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Inc","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5153522147","display_name":"Takase Shimizu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takase Shimizu","raw_affiliation_strings":["NTT Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Inc","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079115508","display_name":"Gento Yamahata","orcid":"https://orcid.org/0000-0002-2164-2796","observed_orcids":["https://orcid.org/0000-0002-2164-2796"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Gento Yamahata","raw_affiliation_strings":["NTT Inc"],"raw_orcid":"https://orcid.org/0000-0002-2164-2796","affiliations":[{"raw_affiliation_string":"NTT Inc","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051223315","display_name":"Seiya Kasai","orcid":"https://orcid.org/0000-0003-1291-2587","observed_orcids":["https://orcid.org/0000-0003-1291-2587"]},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Seiya Kasai","raw_affiliation_strings":["Hokkaido University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hokkaido University","institution_ids":["https://openalex.org/I205349734"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.60220991,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.8848000168800354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.8848000168800354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.05119999870657921,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.024299999698996544,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplitude-modulation-demodulation","display_name":"amplitude modulation demodulation","score":0.8690000176429749},{"id":"https://openalex.org/keywords/single-electron-counting","display_name":"single-electron counting","score":0.8830000162124634},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.7630000114440918},{"id":"https://openalex.org/keywords/retention-time","display_name":"retention time","score":0.8799999952316284},{"id":"https://openalex.org/keywords/access-transistor","display_name":"access transistor","score":0.8650000095367432},{"id":"https://openalex.org/keywords/in-memory-computing","display_name":"in-memory computing","score":0.8080000281333923},{"id":"https://openalex.org/keywords/cmos-compatible-memory","display_name":"CMOS-compatible memory","score":0.7480000257492065}],"concepts":[{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.7915999889373779},{"id":"https://openalex.org/C195251586","wikidata":"https://www.wikidata.org/wiki/Q1185939","display_name":"Demodulation","level":3,"score":0.7860999703407288},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.517300009727478},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.444599986076355},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4205000102519989},{"id":"https://openalex.org/C104267543","wikidata":"https://www.wikidata.org/wiki/Q208163","display_name":"Signal processing","level":3,"score":0.3986999988555908},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3928000032901764},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3926999866962433},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3328000009059906},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.31839999556541443},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.31349998712539673},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.3125},{"id":"https://openalex.org/C11930861","wikidata":"https://www.wikidata.org/wiki/Q181417","display_name":"Frequency modulation","level":3,"score":0.30070000886917114},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.2980000078678131},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.2962000072002411},{"id":"https://openalex.org/C2989121073","wikidata":"https://www.wikidata.org/wiki/Q1309019","display_name":"Transient analysis","level":3,"score":0.2865999937057495},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.27559998631477356},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2700999975204468},{"id":"https://openalex.org/C113407356","wikidata":"https://www.wikidata.org/wiki/Q1431214","display_name":"Spectral leakage","level":3,"score":0.2689000070095062},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.263700008392334},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.26190000772476196},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.2605000138282776}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/led.2026.3738351","doi":"https://doi.org/10.1109/led.2026.3738351","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2026.3738351","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"pmh:oai:arXiv.org:2609.32122","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.32122","pdf_url":"https://arxiv.org/pdf/2609.32122","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.2609.32122","doi":"https://doi.org/10.48550/arxiv.2609.32122","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2609.32122","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2609.32122","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.32122","pdf_url":"https://arxiv.org/pdf/2609.32122","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7214729235.pdf","grobid_xml":"https://content.openalex.org/works/W7214729235.grobid-xml"},"referenced_works_count":17,"referenced_works":["https://openalex.org/W1973818126","https://openalex.org/W1977181183","https://openalex.org/W2040006703","https://openalex.org/W2098084568","https://openalex.org/W2112166600","https://openalex.org/W2119435553","https://openalex.org/W2472415459","https://openalex.org/W3006600764","https://openalex.org/W3104775050","https://openalex.org/W3138864966","https://openalex.org/W4226115116","https://openalex.org/W4388626384","https://openalex.org/W4396941416","https://openalex.org/W4406959322","https://openalex.org/W4407692773","https://openalex.org/W4409433417","https://openalex.org/W4410631568"],"related_works":["https://openalex.org/W2461067859","https://openalex.org/W3146015145","https://openalex.org/W7166863207","https://openalex.org/W3146614288","https://openalex.org/W2098084568","https://openalex.org/W7158774429","https://openalex.org/W2562325520","https://openalex.org/W7223309199","https://openalex.org/W2727261283","https://openalex.org/W4386489761"],"abstract_inverted_index":{"Ultra-low-leakage":[0],"memories":[1,18],"are":[2],"attracting":[3],"increasing":[4],"attention":[5],"for":[6,19,94],"in-memory":[7,83,99],"sensing":[8],"and":[9,98],"computing.":[10],"However,":[11],"achieving":[12],"sufficiently":[13],"long":[14],"retention":[15,56],"in":[16],"silicon":[17],"analog":[20],"signal":[21,96],"processing":[22,97],"remains":[23],"challenging":[24],"because":[25],"of":[26,70],"leakage":[27,42],"through":[28],"the":[29,63,67,71,79],"access":[30,72],"transistor.":[31],"In":[32],"this":[33],"work,":[34],"we":[35],"demonstrate":[36],"an":[37],"all-silicon":[38],"independent-dual-gate":[39],"memory":[40,89],"whose":[41],"current,":[43],"inferred":[44],"from":[45],"single-electron":[46],"counting":[47],"statistics,":[48],"is":[49],"below":[50],"$10^{-22}$":[51],"A,":[52],"giving":[53],"a":[54,91],"measured":[55],"time":[57],"exceeding":[58],"1000":[59],"s.":[60],"Owing":[61],"to":[62],"extremely":[64],"low":[65],"leakage,":[66],"subthreshold":[68],"nonlinearity":[69],"transistor":[73],"can":[74],"be":[75],"exploited":[76],"without":[77],"disturbing":[78],"stored":[80],"charge,":[81],"enabling":[82],"amplitude-modulation":[84],"(AM)":[85],"demodulation.":[86],"The":[87],"proposed":[88],"provides":[90],"CMOS-compatible":[92],"platform":[93],"ultra-low-power":[95],"sensing.":[100]},"counts_by_year":[],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2026-09-30T00:00:00"}