{"id":"https://openalex.org/W7214724939","doi":"https://doi.org/10.60893/figshare.apl.c.8702524","title":"HVPE-growth of Si-doped \u03b2-Ga\u2082O\u2083 on Sapphire: Influence of substrate offcut on structural and electrical properties","display_name":"HVPE-growth of Si-doped \u03b2-Ga\u2082O\u2083 on Sapphire: Influence of substrate offcut on structural and electrical properties","publication_year":2026,"publication_date":"2026-09-29","ids":{"openalex":"https://openalex.org/W7214724939","doi":"https://doi.org/10.60893/figshare.apl.c.8702524"},"language":"en","primary_location":{"id":"doi:10.60893/figshare.apl.c.8702524","doi":"https://doi.org/10.60893/figshare.apl.c.8702524","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8702524","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},"volume":null,"type":"other","is_traditional":false,"indexed_in":["datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.60893/figshare.apl.c.8702524","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113128110","display_name":"Saleh Ahmed Khan","orcid":"https://orcid.org/0009-0009-8492-2777","observed_orcids":["https://orcid.org/0009-0009-8492-2777"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Saleh Ahmed Khan","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5137980443","display_name":"Sourav Sarker","orcid":"https://orcid.org/0009-0006-4704-1215","observed_orcids":["https://orcid.org/0009-0006-4704-1215"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sourav Sarker","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5137977482","display_name":"Anhar Bhuiyan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Anhar Bhuiyan","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5115003335","display_name":"Ahmed Ibreljic","orcid":"https://orcid.org/0009-0001-8275-8485","observed_orcids":["https://orcid.org/0009-0001-8275-8485"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ahmed Ibreljic","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.9620000123977661},{"id":"https://openalex.org/keywords/silicon-doping","display_name":"silicon doping","score":0.765999972820282},{"id":"https://openalex.org/keywords/halide-vapor-phase-epitaxy","display_name":"halide vapor phase epitaxy","score":0.8899999856948853},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.8629999756813049},{"id":"https://openalex.org/keywords/heteroepitaxy","display_name":"heteroepitaxy","score":0.9480000138282776},{"id":"https://openalex.org/keywords/growth-kinetics","display_name":"growth kinetics","score":0.9449999928474426},{"id":"https://openalex.org/keywords/surface-morphology","display_name":"surface morphology","score":0.9629999995231628},{"id":"https://openalex.org/keywords/crystalline-quality","display_name":"crystal quality","score":0.7919999957084656},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.7039999961853027},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.7540000081062317},{"id":"https://openalex.org/keywords/donor-activation-energy","display_name":"donor activation energy","score":0.9660000205039978},{"id":"https://openalex.org/keywords/acceptor-concentration","display_name":"acceptor concentration","score":0.7419999837875366},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductors","display_name":"wide bandgap semiconductors","score":0.8040000200271606}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8370000123977661},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.770799994468689},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6862000226974487},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5623000264167786},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5586000084877014},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4636000096797943},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.42179998755455017},{"id":"https://openalex.org/C2779892579","wikidata":"https://www.wikidata.org/wiki/Q912138","display_name":"Acceptor","level":2,"score":0.4007999897003174},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3912999927997589},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36149999499320984},{"id":"https://openalex.org/C148898269","wikidata":"https://www.wikidata.org/wiki/Q1108792","display_name":"Kinetics","level":2,"score":0.32499998807907104},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.32339999079704285},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.31779998540878296},{"id":"https://openalex.org/C2778312390","wikidata":"https://www.wikidata.org/wiki/Q4139973","display_name":"Growth rate","level":2,"score":0.30809998512268066},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.3066999912261963},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.3001999855041504},{"id":"https://openalex.org/C26456737","wikidata":"https://www.wikidata.org/wiki/Q185154","display_name":"Crystal growth","level":2,"score":0.29409998655319214},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.2831999957561493},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.2590999901294708},{"id":"https://openalex.org/C171560689","wikidata":"https://www.wikidata.org/wiki/Q193086","display_name":"Halide","level":2,"score":0.258899986743927},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.25780001282691956}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.60893/figshare.apl.c.8702524","doi":"https://doi.org/10.60893/figshare.apl.c.8702524","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8702524","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},{"id":"doi:10.60893/figshare.apl.c.8702524.v1","doi":"https://doi.org/10.60893/figshare.apl.c.8702524.v1","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8702524.v1","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"}],"best_oa_location":{"id":"doi:10.60893/figshare.apl.c.8702524","doi":"https://doi.org/10.60893/figshare.apl.c.8702524","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8702524","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W7163640184","https://openalex.org/W7202030938","https://openalex.org/W2952434075","https://openalex.org/W6903934565","https://openalex.org/W4408509599","https://openalex.org/W7168312505","https://openalex.org/W3125507243","https://openalex.org/W1974850834","https://openalex.org/W6910223667","https://openalex.org/W2768800351"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"Si-doped":[3],"\u03b2-Ga\u2082O\u2083":[4,107,174,225,242],"films":[5,133],"were":[6],"heteroepitaxially":[7],"grown":[8,134],"on":[9,23,47,135,175,210,244],"sapphire":[10,21,64,127,213],"substrates":[11],"using":[12],"halide":[13],"vapor":[14],"phase":[15],"epitaxy":[16,243],"(HVPE).":[17],"The":[18,93],"influence":[19],"of":[20,44,132,154,163,180,189,200,222],"offcut":[22,65,128,138,212],"growth":[24,50,56,78,108],"kinetics,":[25],"surface":[26,86,95],"morphology,":[27],"crystalline":[28,101,207,230],"quality,":[29,102],"and":[30,52,109,191,232],"electrical":[31],"transport":[32,183,234],"properties":[33],"was":[34,97,157],"systematically":[35],"investigated.":[36],"Growth":[37],"kinetics":[38],"studies":[39],"revealed":[40],"a":[41,74,110,160,176,196,237],"strong":[42],"dependence":[43],"deposition":[45],"rate":[46],"HCl":[48],"flow,":[49],"pressure,":[51],"source-to-substrate":[53],"distance,":[54],"with":[55,103,195,204,228],"rates":[57],"reaching":[58],"up":[59],"to":[60,70,79,90,122,146],"30":[61],"\u03bcm/hr.":[62],"Increasing":[63],"angle":[66],"from":[67,76,88,120,144],"0{degree":[68],"sign}":[69,72,137],"8{degree":[71],"promoted":[73],"transition":[75],"multidirectional":[77],"highly":[80],"aligned":[81],"terrace-dominated":[82],"surfaces,":[83],"reducing":[84],"the":[85,113,126,167,181,205,211],"roughness":[87],"14.69":[89],"2.74":[91],"nm.":[92],"improved":[94,206],"morphology":[96],"accompanied":[98],"by":[99],"enhanced":[100],"phase-pure":[104],"(-2":[105],"01)-oriented":[106],"reduction":[111],"in":[112],"rocking-curve":[114],"full":[115],"width":[116],"at":[117,159],"half":[118],"maximum":[119,150],"994":[121],"414":[123],"arcsec,":[124],"as":[125],"increased.":[129],"Electrical":[130],"characterization":[131],"6{degree":[136],"substrate":[139],"yielded":[140,185],"carrier":[141,161,233],"concentrations":[142],"ranging":[143],"1.0\u00d710\u00b9\u2077":[145,164],"3.4\u00d710\u00b9\u2078":[147],"cm\u207b\u00b3.":[148],"A":[149],"room-temperature":[151,170],"electron":[152],"mobility":[153,171],"100":[155],"cm\u00b2/V\u00b7s":[156],"achieved":[158,209],"concentration":[162,199],"cm\u207b\u00b3,":[165,202],"representing":[166],"highest":[168],"reported":[169],"for":[172,240],"HVPE-grown":[173],"foreign":[177,246],"substrate.":[178],"Analysis":[179],"temperature-dependent":[182],"characteristics":[184],"donor":[186],"activation":[187],"energies":[188],"35":[190],"90":[192],"meV":[193],"together":[194],"low":[197],"acceptor":[198],"3\u00d710\u00b9\u2075":[201],"consistent":[203],"quality":[208,231],"substrates.":[214,247],"These":[215],"results":[216],"demonstrate":[217],"that":[218],"HVPE":[219],"is":[220],"capable":[221],"producing":[223],"high-quality":[224],"heteroepitaxial":[226],"layers":[227],"good":[229],"characteristics,":[235],"providing":[236],"promising":[238],"pathway":[239],"scalable":[241],"low-cost":[245]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2026-09-30T00:00:00"}