{"id":"https://openalex.org/W7214723179","doi":"https://doi.org/10.48550/arxiv.2609.32437","title":"A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage","display_name":"A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage","publication_year":2026,"publication_date":"2026-09-26","ids":{"openalex":"https://openalex.org/W7214723179","doi":"https://doi.org/10.48550/arxiv.2609.32437"},"language":"en","primary_location":{"id":"pmh:oai:arXiv.org:2609.32437","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.32437","pdf_url":"https://arxiv.org/pdf/2609.32437","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"volume":null,"type":"preprint","is_traditional":true,"indexed_in":["arxiv","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2609.32437","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5153511682","display_name":"Yujian Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chen, Yujian","raw_affiliation_strings":["College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5153493488","display_name":"Guoliang Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhang, Guoliang","raw_affiliation_strings":["College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5153504052","display_name":"Ruijun Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhang, Ruijun","raw_affiliation_strings":["College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","School of Integrated Circuits , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]},{"raw_affiliation_string":"School of Integrated Circuits , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5146512376","display_name":"Liangxun Yue","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue, Liangxun","raw_affiliation_strings":["College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102227257","display_name":"Zhanwei Shen","orcid":"https://orcid.org/0000-0002-4693-2503","observed_orcids":["https://orcid.org/0000-0002-4693-2503"]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shen, Zhanwei","raw_affiliation_strings":["School of Integrated Circuits , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5153452550","display_name":"Feng Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhang, Feng","raw_affiliation_strings":["College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100451810","display_name":"Rong Zhang","orcid":"https://orcid.org/0000-0003-0015-6331","observed_orcids":["https://orcid.org/0000-0003-0015-6331","https://orcid.org/0000-0002-9815-2832"]},"institutions":[{"id":"https://openalex.org/I191208505","display_name":"Xiamen University","ror":"https://ror.org/00mcjh785","country_code":"CN","type":"education","lineage":["https://openalex.org/I191208505"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhang, Rong","raw_affiliation_strings":["College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","School of Integrated Circuits , Xiamen University , Xiamen 361005 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Physical Science and Technology , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]},{"raw_affiliation_string":"School of Integrated Circuits , Xiamen University , Xiamen 361005 , China","institution_ids":["https://openalex.org/I191208505"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I191208505"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reverse-conducting-igbt","display_name":"reverse conducting IGBT","score":0.9100000262260437},{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.8870000243186951},{"id":"https://openalex.org/keywords/optical-injection","display_name":"optical injection","score":0.953000009059906},{"id":"https://openalex.org/keywords/photogenerated-carriers","display_name":"photoexcited carriers","score":0.7839999794960022},{"id":"https://openalex.org/keywords/on-state-voltage","display_name":"on-state voltage","score":0.6800000071525574},{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.5989999771118164},{"id":"https://openalex.org/keywords/conductivity-modulation","display_name":"conductivity modulation","score":0.7390000224113464},{"id":"https://openalex.org/keywords/bipolar-conduction","display_name":"bipolar conduction","score":0.718999981880188}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.8859000205993652},{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.8500000238418579},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7839000225067139},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7609000205993652},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.705299973487854},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6193000078201294},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.5461999773979187},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.46959999203681946},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41290000081062317},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.4052000045776367},{"id":"https://openalex.org/C25230419","wikidata":"https://www.wikidata.org/wiki/Q5195101","display_name":"Current injection technique","level":5,"score":0.38100001215934753},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3621000051498413},{"id":"https://openalex.org/C166869088","wikidata":"https://www.wikidata.org/wiki/Q888791","display_name":"Flyback diode","level":5,"score":0.358599990606308},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.3483000099658966},{"id":"https://openalex.org/C104232198","wikidata":"https://www.wikidata.org/wiki/Q865807","display_name":"Charge carrier","level":2,"score":0.3359000086784363},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.31189998984336853},{"id":"https://openalex.org/C131540310","wikidata":"https://www.wikidata.org/wiki/Q907564","display_name":"Conductivity","level":2,"score":0.30410000681877136},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2971000075340271},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.2915000021457672},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.28859999775886536},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.2863999903202057},{"id":"https://openalex.org/C137693562","wikidata":"https://www.wikidata.org/wiki/Q899628","display_name":"Thermal resistance","level":3,"score":0.2842999994754791},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.28279998898506165},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.2761000096797943},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.2734000086784363},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2687000036239624},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.25690001249313354}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:arXiv.org:2609.32437","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.32437","pdf_url":"https://arxiv.org/pdf/2609.32437","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.2609.32437","doi":"https://doi.org/10.48550/arxiv.2609.32437","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2609.32437","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2609.32437","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.32437","pdf_url":"https://arxiv.org/pdf/2609.32437","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.75,"id":"https://metadata.un.org/sdg/7"},{"display_name":"Industry, innovation and infrastructure","score":0.6773999929428101,"id":"https://metadata.un.org/sdg/9"}],"study_designs":[],"awards":[{"id":"https://openalex.org/G4851276451","display_name":null,"funder_award_id":"2023YFB3609500","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G7377700669","display_name":null,"funder_award_id":"62274137","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7928445740","display_name":null,"funder_award_id":"2023YFB3609502","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320327040","display_name":"State Key Laboratory of Electrical Insulation and Power Equipment","ror":"https://ror.org/03kd9rr37"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7214723179.pdf","grobid_xml":"https://content.openalex.org/works/W7214723179.grobid-xml"},"referenced_works_count":29,"referenced_works":["https://openalex.org/W2012171854","https://openalex.org/W2039259723","https://openalex.org/W2046381472","https://openalex.org/W2046777007","https://openalex.org/W2100084115","https://openalex.org/W2106312433","https://openalex.org/W2108597019","https://openalex.org/W2120243799","https://openalex.org/W2242900195","https://openalex.org/W2313614854","https://openalex.org/W2619309567","https://openalex.org/W2727389060","https://openalex.org/W2787710197","https://openalex.org/W2945898822","https://openalex.org/W3039135076","https://openalex.org/W3080881049","https://openalex.org/W3216077649","https://openalex.org/W4206696662","https://openalex.org/W4241070446","https://openalex.org/W4308471051","https://openalex.org/W4394698487","https://openalex.org/W4396813228","https://openalex.org/W4405812586","https://openalex.org/W4405932677","https://openalex.org/W4408770303","https://openalex.org/W7123355694","https://openalex.org/W7155351646","https://openalex.org/W7164296335","https://openalex.org/W7165528898"],"related_works":["https://openalex.org/W4394698487","https://openalex.org/W4413018577","https://openalex.org/W2787710197","https://openalex.org/W7164329688","https://openalex.org/W3036438487","https://openalex.org/W2059093623","https://openalex.org/W2953956843","https://openalex.org/W1984482825","https://openalex.org/W1990130215","https://openalex.org/W2099784882"],"abstract_inverted_index":{"This":[0],"letter":[1],"proposes":[2],"a":[3,37,101],"20-kV":[4],"4H-SiC":[5],"optical-injection-enhanced":[6],"reverse-conducting":[7],"IGBT":[8],"(OIE-RC-IGBT)":[9],"with":[10,111],"snapback-free":[11,120],"operation":[12,121],"and":[13,48,58,61,80,141,150,165],"low":[14],"on-state":[15,103,136],"voltage.":[16,104],"Light-emitting":[17],"diodes":[18],"(LEDs)":[19],"are":[20,145],"integrated":[21],"into":[22],"the":[23,44,53,56,63,67,77,82,92,112,116,124,135,156,163],"gate":[24],"structure":[25],"to":[26,84,132],"provide":[27],"optical":[28,159],"injection":[29,160],"during":[30],"forward":[31],"conduction.":[32,86],"The":[33],"emitted":[34],"light":[35],"generates":[36],"high":[38],"concentration":[39],"of":[40,55,127,158,168],"photogenerated":[41,93],"carriers":[42,94],"in":[43,100],"carrier-storage":[45],"layer":[46],"(CSL)":[47],"drift":[49,59],"region,":[50],"thereby":[51],"reducing":[52,123],"resistance":[54],"JFET":[57],"regions":[60],"increasing":[62],"device":[64,118],"current.":[65],"Consequently,":[66],"collector-side":[68],"P+/N":[69],"junction":[70],"is":[71,90],"turned":[72],"on":[73],"earlier,":[74],"effectively":[75],"suppressing":[76],"snapback":[78],"effect":[79],"facilitating":[81],"transition":[83],"bipolar":[85,88],"After":[87],"conduction":[89,164],"established,":[91],"further":[95],"enhance":[96],"conductivity":[97],"modulation,":[98],"resulting":[99],"reduced":[102,146],"TCAD":[105],"simulation":[106],"results":[107,154],"show":[108],"that,":[109],"compared":[110],"conventional":[113],"RC-IGBT":[114],"(C-RC-IGBT),":[115],"proposed":[117],"achieves":[119],"while":[122],"required":[125],"number":[126],"MOS":[128],"cells":[129],"from":[130],"25":[131],"5.":[133],"Moreover,":[134],"voltage,":[137],"turn-off":[138,142,166],"fall":[139],"time,":[140],"energy":[143],"loss":[144],"by":[147],"22.37%,":[148],"25.06%,":[149],"19.69%,":[151],"respectively.":[152],"These":[153],"demonstrate":[155],"potential":[157],"for":[161],"improving":[162],"performance":[167],"ultrahigh-voltage":[169],"SiC":[170],"RC-IGBTs.":[171]},"counts_by_year":[],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2026-09-30T00:00:00"}