{"id":"https://openalex.org/W7214712415","doi":"https://doi.org/10.60893/figshare.apl.c.8707594","title":"Impact of Electrical Initialization Step on Transition Voltage and Power of Vanadium Dioxide Memristors","display_name":"Impact of Electrical Initialization Step on Transition Voltage and Power of Vanadium Dioxide Memristors","publication_year":2026,"publication_date":"2026-09-29","ids":{"openalex":"https://openalex.org/W7214712415","doi":"https://doi.org/10.60893/figshare.apl.c.8707594"},"language":"en","primary_location":{"id":"doi:10.60893/figshare.apl.c.8707594","doi":"https://doi.org/10.60893/figshare.apl.c.8707594","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8707594","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},"volume":null,"type":"other","is_traditional":false,"indexed_in":["datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.60893/figshare.apl.c.8707594","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064026729","display_name":"Denis Flandre","orcid":"https://orcid.org/0000-0001-5298-5196","observed_orcids":["https://orcid.org/0000-0001-5298-5196"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Denis Flandre","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075705263","display_name":"Jean\u2010Pierre Raskin","orcid":"https://orcid.org/0000-0001-9715-9699","observed_orcids":["https://orcid.org/0000-0001-9715-9699"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jean-Pierre Raskin","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5116902538","display_name":"Lo\u00efc Lahaye","orcid":"https://orcid.org/0009-0008-1419-923X","observed_orcids":["https://orcid.org/0009-0008-1419-923X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Lo\u00efc Lahaye","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107293030","display_name":"Thomas Ratier","orcid":"https://orcid.org/0009-0001-1378-9149","observed_orcids":["https://orcid.org/0009-0001-1378-9149"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Thomas Ratier","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5153447590","display_name":"Xi Zeng","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xi Zeng","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.926800012588501,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.926800012588501,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.07209999859333038,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vanadium-dioxide","display_name":"vanadium dioxide","score":0.9919999837875366},{"id":"https://openalex.org/keywords/memristors","display_name":"memristors","score":0.9950000047683716},{"id":"https://openalex.org/keywords/metal-insulator-transition","display_name":"metal-insulator transition","score":0.972000002861023},{"id":"https://openalex.org/keywords/electroforming","display_name":"electroforming","score":0.9210000038146973},{"id":"https://openalex.org/keywords/transition-voltage","display_name":"transition voltage","score":0.9129999876022339},{"id":"https://openalex.org/keywords/percolation-model","display_name":"percolation model","score":0.8799999952316284}],"concepts":[{"id":"https://openalex.org/C114466953","wikidata":"https://www.wikidata.org/wiki/Q6034165","display_name":"Initialization","level":2,"score":0.8974999785423279},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6973999738693237},{"id":"https://openalex.org/C2780457167","wikidata":"https://www.wikidata.org/wiki/Q17156484","display_name":"Percolation (cognitive psychology)","level":2,"score":0.6111999750137329},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.6104999780654907},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5090000033378601},{"id":"https://openalex.org/C2993672782","wikidata":"https://www.wikidata.org/wiki/Q421440","display_name":"Vanadium dioxide","level":3,"score":0.4900999963283539},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.47850000858306885},{"id":"https://openalex.org/C106773901","wikidata":"https://www.wikidata.org/wiki/Q19588","display_name":"Transition metal","level":3,"score":0.46790000796318054},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.4456000030040741},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4456000030040741},{"id":"https://openalex.org/C504678139","wikidata":"https://www.wikidata.org/wiki/Q722","display_name":"Vanadium","level":2,"score":0.40400001406669617},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39149999618530273},{"id":"https://openalex.org/C149288129","wikidata":"https://www.wikidata.org/wiki/Q185357","display_name":"Phase transition","level":2,"score":0.38749998807907104},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.3871000111103058},{"id":"https://openalex.org/C47542005","wikidata":"https://www.wikidata.org/wiki/Q7834435","display_name":"Transition temperature","level":3,"score":0.37279999256134033},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.3691999912261963},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.359499990940094},{"id":"https://openalex.org/C196796808","wikidata":"https://www.wikidata.org/wiki/Q132629","display_name":"Electrical network","level":2,"score":0.33649998903274536},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3345000147819519},{"id":"https://openalex.org/C2779530757","wikidata":"https://www.wikidata.org/wiki/Q1207505","display_name":"Quality (philosophy)","level":2,"score":0.32760000228881836},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.3203999996185303},{"id":"https://openalex.org/C2729557","wikidata":"https://www.wikidata.org/wiki/Q7167170","display_name":"Percolation threshold","level":3,"score":0.29980000853538513},{"id":"https://openalex.org/C47446073","wikidata":"https://www.wikidata.org/wiki/Q5165890","display_name":"Control theory (sociology)","level":3,"score":0.27799999713897705},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.26649999618530273},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.26579999923706055},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26499998569488525},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2599000036716461}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.60893/figshare.apl.c.8707594","doi":"https://doi.org/10.60893/figshare.apl.c.8707594","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8707594","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"}],"best_oa_location":{"id":"doi:10.60893/figshare.apl.c.8707594","doi":"https://doi.org/10.60893/figshare.apl.c.8707594","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8707594","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W7214627648","https://openalex.org/W7155508083","https://openalex.org/W7147222889","https://openalex.org/W3202062040","https://openalex.org/W3128827515","https://openalex.org/W7172272560","https://openalex.org/W2048991821","https://openalex.org/W7223247693","https://openalex.org/W4387057394","https://openalex.org/W4210947346"],"abstract_inverted_index":{"Vanadium":[0],"dioxide":[1],"(VO2)":[2],"exhibits":[3],"an":[4,71,190],"insulator-to-metal":[5],"transition":[6,120,149,164],"(IMT)":[7],"near":[8],"room":[9],"temperature.":[10],"Toward":[11],"its":[12],"practical":[13],"use":[14],"as":[15,63],"volatile":[16],"memristors,":[17],"we":[18],"investigate":[19],"the":[20,23,29,68,81,99,106,141,148,163,178,187],"effect":[21],"of":[22,33,70,80,101,132,189],"first":[24,108,179],"electrical":[25],"cycle":[26,73],"(initialization)":[27],"on":[28,42,90,129],"electrically":[30],"activated":[31],"IMT":[32],"VO2-based":[34,194],"devices.":[35],"We":[36],"utilize":[37],"polycrystalline":[38],"VO2":[39],"thin":[40],"films":[41],"SiO2":[43],"to":[44,74,174,177],"fabricate":[45],"micro-memristors":[46],"with":[47],"varying":[48],"length":[49],"(L":[50],"=":[51,57],"0.6-2.4":[52],"\u03bcm)":[53],"and":[54,152,169,185],"width":[55],"(W":[56],"5-25":[58],"\u03bcm).":[59],"They":[60],"are":[61],"analyzed":[62],"voltage-driven":[64],"devices,":[65],"systematically":[66],"assessing":[67],"necessity":[69],"initialization":[72,82,191],"stabilize":[75],"their":[76],"behavior.":[77],"The":[78,118],"impact":[79,188],"is":[83,170],"interpreted":[84],"using":[85],"a":[86,91],"percolation":[87],"model":[88],"based":[89],"stochastic":[92],"2-D":[93],"heterogeneous":[94],"network.":[95],"It":[96],"demonstrates":[97],"that":[98,140],"introduction":[100],"persistent":[102],"metallic":[103],"domains":[104],"from":[105],"very":[107],"activation":[109],"facilitates":[110],"later":[111],"switching":[112],"events":[113],"occurring":[114],"at":[115],"lower":[116],"voltage.":[117],"voltage-induced":[119],"was":[121],"further":[122],"studied":[123],"across":[124],"thirty":[125],"memristors":[126],"per":[127],"layer,":[128],"two":[130],"layers":[131],"differing":[133],"quality":[134],"(sixty":[135],"devices":[136],"in":[137,193],"total),":[138],"revealing":[139],"initial":[142],"electroforming-like":[143],"event":[144],"significantly":[145],"reduces":[146],"both":[147],"voltage":[150],"(Vimt)":[151],"current":[153],"(Iimt)":[154],"required":[155],"for":[156,159],"subsequent":[157],"transitions":[158],"all":[160],"geometries.":[161],"Notably,":[162],"power":[165],"(Pimt)":[166],"becomes":[167],"geometry-independent":[168],"reduced":[171],"by":[172],"up":[173],"90%":[175],"compared":[176],"activation.":[180],"This":[181],"study":[182],"demonstrates,":[183],"models,":[184],"assesses":[186],"process":[192],"memristors.":[195]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2026-09-30T00:00:00"}