{"id":"https://openalex.org/W7214188652","doi":"https://doi.org/10.1109/led.2026.3736022","title":"Impact of Geometrical Modification at the Electrode/Channel Interface on a-IGZO Transistors","display_name":"Impact of Geometrical Modification at the Electrode/Channel Interface on a-IGZO Transistors","publication_year":2026,"publication_date":"2026-09-24","ids":{"openalex":"https://openalex.org/W7214188652","doi":"https://doi.org/10.1109/led.2026.3736022"},"language":"en","primary_location":{"id":"doi:10.1109/led.2026.3736022","doi":"https://doi.org/10.1109/led.2026.3736022","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2026.3736022","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5152642175","display_name":"Dong-Seon Kim","orcid":"https://orcid.org/0009-0009-0770-8240","observed_orcids":["https://orcid.org/0009-0009-0770-8240"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Seon Kim","raw_affiliation_strings":["Hanyang University"],"raw_orcid":"https://orcid.org/0009-0009-0770-8240","affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5159355642","display_name":"Joo Hee Jeong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joo Hee Jeong","raw_affiliation_strings":["Hanyang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5152726796","display_name":"Seonwoong Bang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonwoong Bang","raw_affiliation_strings":["Hanyang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036670213","display_name":"Gwang\u2010Bok Kim","orcid":"https://orcid.org/0009-0009-5432-5904","observed_orcids":["https://orcid.org/0009-0009-5432-5904"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gwang-Bok Kim","raw_affiliation_strings":["Hanyang University"],"raw_orcid":"https://orcid.org/0009-0009-5432-5904","affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042684817","display_name":"Seong Hun Yoon","orcid":"https://orcid.org/0009-0000-7269-840X","observed_orcids":["https://orcid.org/0009-0000-7269-840X"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong Hun Yoon","raw_affiliation_strings":["Hanyang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100382762","display_name":"Minsun Kim","orcid":"https://orcid.org/0000-0002-3901-849X","observed_orcids":["https://orcid.org/0000-0002-3901-849X","https://orcid.org/0009-0006-7100-633X"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minsun Kim","raw_affiliation_strings":["Hanyang University"],"raw_orcid":"https://orcid.org/0009-0006-7100-633X","affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047706011","display_name":"Sunghyun Choi","orcid":"https://orcid.org/0000-0003-0279-445X","observed_orcids":["https://orcid.org/0000-0003-0279-445X"]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunghyun Choi","raw_affiliation_strings":["Samsung Electronics Company Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Ltd","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009891522","display_name":"Kwangmin Park","orcid":"https://orcid.org/0000-0002-2749-8932","observed_orcids":["https://orcid.org/0000-0002-2749-8932"]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwangmin Park","raw_affiliation_strings":["Samsung Electronics Company Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Ltd","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005183857","display_name":"Jae Kyeong Jeong","orcid":"https://orcid.org/0000-0003-3857-1039","observed_orcids":["https://orcid.org/0000-0003-3857-1039"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Kyeong Jeong","raw_affiliation_strings":["Hanyang University"],"raw_orcid":"https://orcid.org/0000-0003-3857-1039","affiliations":[{"raw_affiliation_string":"Hanyang University","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"47","issue":"11","first_page":"2211","last_page":"2214"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-indium-gallium-zinc-oxide","display_name":"amorphous indium gallium zinc oxide","score":0.9380000233650208},{"id":"https://openalex.org/keywords/interface-engineering","display_name":"interface engineering","score":0.5170000195503235},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.8610000014305115}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6923999786376953},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6200000047683716},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.617900013923645},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5551999807357788},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.39649999141693115},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3763999938964844},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34940001368522644},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3384999930858612},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.31529998779296875},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.3061999976634979},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.2913999855518341},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.274399995803833},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.27059999108314514},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.2581999897956848},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.25029999017715454},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2502000033855438}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/led.2026.3736022","doi":"https://doi.org/10.1109/led.2026.3736022","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2026.3736022","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1970118450","https://openalex.org/W1999589524","https://openalex.org/W2143066549","https://openalex.org/W2147631772","https://openalex.org/W2158932701","https://openalex.org/W2202948042","https://openalex.org/W2743921851","https://openalex.org/W2804997010","https://openalex.org/W2985830373","https://openalex.org/W3048929126","https://openalex.org/W3160045927","https://openalex.org/W4224228787","https://openalex.org/W4224305881","https://openalex.org/W4226532835","https://openalex.org/W4298141364","https://openalex.org/W4312050394","https://openalex.org/W4376457084","https://openalex.org/W4393145092","https://openalex.org/W4393151055","https://openalex.org/W4401881675","https://openalex.org/W4407103177","https://openalex.org/W4407691383","https://openalex.org/W4407692773","https://openalex.org/W4413514443"],"related_works":["https://openalex.org/W3026107759","https://openalex.org/W7206149501","https://openalex.org/W2596763220","https://openalex.org/W7214224953","https://openalex.org/W3144964820","https://openalex.org/W4400080432","https://openalex.org/W2346675539","https://openalex.org/W2738017959","https://openalex.org/W7125110865","https://openalex.org/W2566734145"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-29T09:56:32.521200","created_date":"2026-09-25T00:00:00"}