{"id":"https://openalex.org/W7214079727","doi":"https://doi.org/10.1134/s2075113326700905","title":"The Effect of the Gate Material in MIS Structures on the High-Field Charge Degradation in the Gate Dielectric","display_name":"The Effect of the Gate Material in MIS Structures on the High-Field Charge Degradation in the Gate Dielectric","publication_year":2026,"publication_date":"2026-09-23","ids":{"openalex":"https://openalex.org/W7214079727","doi":"https://doi.org/10.1134/s2075113326700905"},"language":"en","primary_location":{"id":"doi:10.1134/s2075113326700905","doi":"https://doi.org/10.1134/s2075113326700905","is_oa":false,"landing_page_url":"https://doi.org/10.1134/s2075113326700905","pdf_url":null,"source":{"id":"https://openalex.org/S3133755","display_name":"Inorganic Materials Applied Research","issn_l":"2075-1133","issn":["2075-1133","2075-115X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Inorganic Materials: Applied Research","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W7214079727"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022057946","display_name":"Dmitrii V. Andreev","orcid":"https://orcid.org/0000-0001-9080-1028","observed_orcids":["https://orcid.org/0000-0001-9080-1028"]},"institutions":[{"id":"https://openalex.org/I177537411","display_name":"Bauman Moscow State Technical University","ror":"https://ror.org/00pb8h375","country_code":"RU","type":"education","lineage":["https://openalex.org/I177537411"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"D. V. Andreev","raw_affiliation_strings":["Bauman Moscow State Technical University, 105005, Moscow, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bauman Moscow State Technical University, 105005, Moscow, Russia","institution_ids":["https://openalex.org/I177537411"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083453409","display_name":"S. A. Kornev","orcid":"https://orcid.org/0000-0001-9235-3804","observed_orcids":["https://orcid.org/0000-0001-9235-3804"]},"institutions":[{"id":"https://openalex.org/I177537411","display_name":"Bauman Moscow State Technical University","ror":"https://ror.org/00pb8h375","country_code":"RU","type":"education","lineage":["https://openalex.org/I177537411"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"S. A. Kornev","raw_affiliation_strings":["Bauman Moscow State Technical University, 105005, Moscow, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bauman Moscow State Technical University, 105005, Moscow, Russia","institution_ids":["https://openalex.org/I177537411"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5134639561","display_name":"G. G. Bondarenko","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118501908","display_name":"National Research University Higher School of Economics","ror":"https://ror.org/055f7t516","country_code":"RU","type":"education","lineage":["https://openalex.org/I118501908"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"G. G. Bondarenko","raw_affiliation_strings":["National Research University Higher School of Economics, 101000, Moscow, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Research University Higher School of Economics, 101000, Moscow, Russia","institution_ids":["https://openalex.org/I118501908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5152566436","display_name":"V. V. Andreev","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I177537411","display_name":"Bauman Moscow State Technical University","ror":"https://ror.org/00pb8h375","country_code":"RU","type":"education","lineage":["https://openalex.org/I177537411"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"V. V. Andreev","raw_affiliation_strings":["Bauman Moscow State Technical University, 105005, Moscow, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bauman Moscow State Technical University, 105005, Moscow, Russia","institution_ids":["https://openalex.org/I177537411"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5022057946","https://openalex.org/A5083453409","https://openalex.org/A5134639561","https://openalex.org/A5152566436"],"corresponding_institution_ids":["https://openalex.org/I118501908","https://openalex.org/I177537411"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"17","issue":"5","first_page":"1226","last_page":"1230"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9897000193595886,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9897000193595886,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0035000001080334187,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-insulator-semiconductor-structures","display_name":"metal-insulator-semiconductor structures","score":0.8679999709129333},{"id":"https://openalex.org/keywords/gate-dielectric-degradation","display_name":"gate dielectric degradation","score":0.8500000238418579},{"id":"https://openalex.org/keywords/gate-materials","display_name":"gate materials","score":0.4580000042915344},{"id":"https://openalex.org/keywords/aluminum-gate","display_name":"aluminum gate","score":0.9570000171661377},{"id":"https://openalex.org/keywords/polysilicon-gate","display_name":"polysilicon gate","score":0.9670000076293945},{"id":"https://openalex.org/keywords/phosphorus-doped-polysilicon","display_name":"phosphorus-doped polysilicon","score":0.9300000071525574},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.5699999928474426},{"id":"https://openalex.org/keywords/dielectric-breakdown","display_name":"dielectric breakdown","score":0.7680000066757202}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9384999871253967},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.637499988079071},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6265000104904175},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6233999729156494},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.611299991607666},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4165000021457672},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.39959999918937683},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.3682999908924103},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.3610000014305115},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3098999857902527},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.27239999175071716},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.2596000134944916},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.2581999897956848},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2565999925136566}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1134/s2075113326700905","doi":"https://doi.org/10.1134/s2075113326700905","is_oa":false,"landing_page_url":"https://doi.org/10.1134/s2075113326700905","pdf_url":null,"source":{"id":"https://openalex.org/S3133755","display_name":"Inorganic Materials Applied Research","issn_l":"2075-1133","issn":["2075-1133","2075-115X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Inorganic Materials: Applied Research","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1529803699","https://openalex.org/W1967736263","https://openalex.org/W1994163260","https://openalex.org/W1999102642","https://openalex.org/W2015294746","https://openalex.org/W2016908847","https://openalex.org/W2019017004","https://openalex.org/W2019912636","https://openalex.org/W2020155680","https://openalex.org/W2020446215","https://openalex.org/W2059537683","https://openalex.org/W2065097001","https://openalex.org/W2066099102","https://openalex.org/W2074680949","https://openalex.org/W2081373586","https://openalex.org/W2092116970","https://openalex.org/W2100784107","https://openalex.org/W2520995987","https://openalex.org/W2523194864","https://openalex.org/W2804557027","https://openalex.org/W2974006943","https://openalex.org/W3022540884","https://openalex.org/W3156521263","https://openalex.org/W4210489493","https://openalex.org/W4293824649","https://openalex.org/W4367175859","https://openalex.org/W4393086690","https://openalex.org/W4400363483","https://openalex.org/W4414492306","https://openalex.org/W4415680154"],"related_works":["https://openalex.org/W7168168386","https://openalex.org/W2035460989","https://openalex.org/W4224291747","https://openalex.org/W2996615619","https://openalex.org/W3156521263","https://openalex.org/W2347951718","https://openalex.org/W3108756944","https://openalex.org/W2043610519","https://openalex.org/W2987047503","https://openalex.org/W2761082004"],"abstract_inverted_index":{"Abstract":[0],"Comparative":[1],"studies":[2],"are":[3,30],"carried":[4],"out":[5],"to":[6,51,67,133],"investigate":[7],"high-field":[8,33,90,136],"charge":[9,73,118,126],"degradation":[10,74,119],"effects":[11,75],"in":[12,27,97],"the":[13,37,72,78,105,115,124,129],"gate":[14,79,87,130],"dielectric":[15,38,80,131],"of":[16,41,81,85,107,117,145],"metal\u2014insulator\u2014semiconductor":[17],"(MIS)":[18],"structures":[19,29,83,99],"with":[20,47],"aluminum":[21],"and":[22],"polysilicon":[23,103],"gates.":[24],"Charging":[25],"phenomena":[26],"MIS":[28,82,98],"explored":[31],"using":[32],"electron":[34],"injection":[35,59,91],"into":[36,71,128],"under":[39,89],"conditions":[40],"gradually":[42],"increasing":[43],"voltage":[44,137],"current":[45,60],"density,":[46],"periodic":[48],"short-term":[49],"switching":[50],"a":[52,56,101,108,122],"measurement":[53],"mode":[54],"at":[55],"constant":[57],"low":[58],"density.":[61],"This":[62],"approach":[63],"makes":[64],"it":[65],"possible":[66],"obtain":[68],"new":[69],"insights":[70],"developing":[76],"inside":[77],"made":[84],"different":[86],"materials":[88],"conditions.":[92],"The":[93],"results":[94],"demonstrate":[95],"that,":[96],"having":[100],"phosphorus-doped":[102],"gate,":[104],"formation":[106],"thin":[109],"phosphorus\u2014silicate":[110],"glass":[111],"layer":[112],"significantly":[113],"suppresses":[114],"rate":[116],"processes.":[120],"As":[121],"consequence,":[123],"average":[125],"injected":[127],"prior":[132],"breakdown":[134],"during":[135],"testing":[138],"increases":[139],"by":[140],"more":[141],"than":[142],"an":[143],"order":[144],"magnitude.":[146]},"counts_by_year":[],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2026-09-24T00:00:00"}