{"id":"https://openalex.org/W7214050959","doi":"https://doi.org/10.48550/arxiv.2609.22845","title":"Device contacts as spin-state selectors for silicon vacancies in 4H-SiC","display_name":"Device contacts as spin-state selectors for silicon vacancies in 4H-SiC","publication_year":2026,"publication_date":"2026-09-19","ids":{"openalex":"https://openalex.org/W7214050959","doi":"https://doi.org/10.48550/arxiv.2609.22845"},"language":"en","primary_location":{"id":"pmh:oai:arXiv.org:2609.22845","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.22845","pdf_url":"https://arxiv.org/pdf/2609.22845","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"volume":null,"type":"preprint","is_traditional":true,"indexed_in":["arxiv","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2609.22845","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5135575401","display_name":"Aurora Teien","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Teien, Aurora","raw_affiliation_strings":["Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058700942","display_name":"Maria Mendes Martins","orcid":"https://orcid.org/0000-0002-2506-505X","observed_orcids":["https://orcid.org/0000-0002-2506-505X"]},"institutions":[{"id":"https://openalex.org/I2802229908","display_name":"Paul Scherrer Institute","ror":"https://ror.org/03eh3y714","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I2802229908"]},{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Martins, Maria Mendes","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","PSI Center for Neutron and Muon Sciences , 5232 Villigen PSI , Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","institution_ids":["https://openalex.org/I35440088"]},{"raw_affiliation_string":"PSI Center for Neutron and Muon Sciences , 5232 Villigen PSI , Switzerland","institution_ids":["https://openalex.org/I2802229908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078992023","display_name":"Andreas Gottscholl","orcid":"https://orcid.org/0000-0002-9724-1657","observed_orcids":["https://orcid.org/0000-0002-9724-1657"]},"institutions":[{"id":"https://openalex.org/I122411786","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055","country_code":"US","type":"education","lineage":["https://openalex.org/I122411786"]},{"id":"https://openalex.org/I1334627681","display_name":"Jet Propulsion Laboratory","ror":"https://ror.org/027k65916","country_code":"US","type":"facility","lineage":["https://openalex.org/I122411786","https://openalex.org/I1334627681","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gottscholl, Andreas","raw_affiliation_strings":["NASA Jet Propulsion Laboratory , California Institute of Technology , Pasadena , CA , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NASA Jet Propulsion Laboratory , California Institute of Technology , Pasadena , CA , USA","institution_ids":["https://openalex.org/I122411786","https://openalex.org/I1334627681"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068674802","display_name":"Axel Erlebach","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Erlebach, Axel","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091622085","display_name":"Piyush Kumar","orcid":"https://orcid.org/0000-0003-3321-2627","observed_orcids":["https://orcid.org/0000-0003-3321-2627"]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Kumar, Piyush","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037261968","display_name":"Erlend Lemva Ousdal","orcid":"https://orcid.org/0009-0002-0323-5254","observed_orcids":["https://orcid.org/0009-0002-0323-5254"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Ousdal, Erlend Lemva","raw_affiliation_strings":["Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055452047","display_name":"Viktor Bobal","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Bobal, Viktor","raw_affiliation_strings":["Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077803454","display_name":"Augustinas Galeckas","orcid":"https://orcid.org/0000-0001-5988-5980","observed_orcids":["https://orcid.org/0000-0001-5988-5980"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Galeckas, Augustinas","raw_affiliation_strings":["Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009190985","display_name":"Thomas Prokscha","orcid":"https://orcid.org/0000-0002-7643-4695","observed_orcids":["https://orcid.org/0000-0002-7643-4695"]},"institutions":[{"id":"https://openalex.org/I2802229908","display_name":"Paul Scherrer Institute","ror":"https://ror.org/03eh3y714","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I2802229908"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Prokscha, Thomas","raw_affiliation_strings":["PSI Center for Neutron and Muon Sciences , 5232 Villigen PSI , Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PSI Center for Neutron and Muon Sciences , 5232 Villigen PSI , Switzerland","institution_ids":["https://openalex.org/I2802229908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034419982","display_name":"Hannes Kraus","orcid":"https://orcid.org/0000-0003-1727-5644","observed_orcids":["https://orcid.org/0000-0003-1727-5644"]},"institutions":[{"id":"https://openalex.org/I122411786","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055","country_code":"US","type":"education","lineage":["https://openalex.org/I122411786"]},{"id":"https://openalex.org/I1334627681","display_name":"Jet Propulsion Laboratory","ror":"https://ror.org/027k65916","country_code":"US","type":"facility","lineage":["https://openalex.org/I122411786","https://openalex.org/I1334627681","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kraus, Hannes","raw_affiliation_strings":["NASA Jet Propulsion Laboratory , California Institute of Technology , Pasadena , CA , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NASA Jet Propulsion Laboratory , California Institute of Technology , Pasadena , CA , USA","institution_ids":["https://openalex.org/I122411786","https://openalex.org/I1334627681"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5136316947","display_name":"Corey J. Cochrane","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I122411786","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055","country_code":"US","type":"education","lineage":["https://openalex.org/I122411786"]},{"id":"https://openalex.org/I1334627681","display_name":"Jet Propulsion Laboratory","ror":"https://ror.org/027k65916","country_code":"US","type":"facility","lineage":["https://openalex.org/I122411786","https://openalex.org/I1334627681","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cochrane, Corey J.","raw_affiliation_strings":["NASA Jet Propulsion Laboratory , California Institute of Technology , Pasadena , CA , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NASA Jet Propulsion Laboratory , California Institute of Technology , Pasadena , CA , USA","institution_ids":["https://openalex.org/I122411786","https://openalex.org/I1334627681"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019659469","display_name":"Ulrike Gro\u00dfner","orcid":"https://orcid.org/0000-0002-2495-8550","observed_orcids":["https://orcid.org/0000-0002-2495-8550"]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Grossner, Ulrike","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050457499","display_name":"Lasse Vines","orcid":"https://orcid.org/0000-0001-5759-7192","observed_orcids":["https://orcid.org/0000-0001-5759-7192"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Vines, Lasse","raw_affiliation_strings":["Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5040564265","display_name":"Marianne Etzelm\u00fcller Bathen","orcid":"https://orcid.org/0000-0002-6269-3530","observed_orcids":["https://orcid.org/0000-0002-6269-3530"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]},{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH","NO"],"is_corresponding":false,"raw_author_name":"Bathen, Marianne Etzelm\u00fcller","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory , ETH Z\u00fcrich , Physikstrasse 3 , 8092 Z\u00fcrich , Switzerland","institution_ids":["https://openalex.org/I35440088"]},{"raw_affiliation_string":"Department of Physics/ Centre for Materials Science and Nanotechnology , University of Oslo , 0316 Oslo , Norway","institution_ids":["https://openalex.org/I184942183"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.9375,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.9375,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.04019999876618385,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.006800000090152025,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-vacancy","display_name":"silicon vacancy","score":0.9169999957084656},{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9459999799728394},{"id":"https://openalex.org/keywords/nickel-contacts","display_name":"nickel contacts","score":0.7120000123977661},{"id":"https://openalex.org/keywords/muon-spin-rotation","display_name":"muon spin rotation","score":0.7820000052452087},{"id":"https://openalex.org/keywords/magnetic-contamination","display_name":"magnetic contamination","score":0.4779999852180481},{"id":"https://openalex.org/keywords/spin-environment","display_name":"spin environment","score":0.41600000858306885},{"id":"https://openalex.org/keywords/quantum-defects","display_name":"quantum defects","score":0.4169999957084656},{"id":"https://openalex.org/keywords/cathodoluminescence","display_name":"cathodoluminescence","score":0.6690000295639038}],"concepts":[{"id":"https://openalex.org/C139861200","wikidata":"https://www.wikidata.org/wiki/Q369794","display_name":"Cathodoluminescence","level":3,"score":0.7310000061988831},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6869000196456909},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5825999975204468},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5490000247955322},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.5282999873161316},{"id":"https://openalex.org/C42704618","wikidata":"https://www.wikidata.org/wiki/Q910917","display_name":"Spin (aerodynamics)","level":2,"score":0.5275999903678894},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5163999795913696},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4869000017642975},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4819999933242798},{"id":"https://openalex.org/C124657808","wikidata":"https://www.wikidata.org/wiki/Q1133068","display_name":"Quantum dot","level":2,"score":0.4731999933719635},{"id":"https://openalex.org/C2778870898","wikidata":"https://www.wikidata.org/wiki/Q7577658","display_name":"Spins","level":2,"score":0.44929999113082886},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.44209998846054077},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.37779998779296875},{"id":"https://openalex.org/C114221277","wikidata":"https://www.wikidata.org/wiki/Q899743","display_name":"Vacancy defect","level":2,"score":0.35440000891685486},{"id":"https://openalex.org/C207999682","wikidata":"https://www.wikidata.org/wiki/Q258659","display_name":"Spintronics","level":3,"score":0.3463999927043915},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.33399999141693115},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.32010000944137573},{"id":"https://openalex.org/C125938697","wikidata":"https://www.wikidata.org/wiki/Q2668132","display_name":"Magnetic semiconductor","level":3,"score":0.31619998812675476},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.30640000104904175}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:arXiv.org:2609.22845","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.22845","pdf_url":"https://arxiv.org/pdf/2609.22845","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.2609.22845","doi":"https://doi.org/10.48550/arxiv.2609.22845","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2609.22845","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2609.22845","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.22845","pdf_url":"https://arxiv.org/pdf/2609.22845","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1920063500","display_name":"Understanding processing-induced defects to improve semiconductor device manufacturing technology","funder_award_id":"192218","funder_id":"https://openalex.org/F4320320924","funder_display_name":"Schweizerischer Nationalfonds zur F\u00f6rderung der Wissenschaftlichen Forschung"},{"id":"https://openalex.org/G2676722403","display_name":null,"funder_award_id":"80NM0018D0004","funder_id":"https://openalex.org/F4320332375","funder_display_name":"Jet Propulsion Laboratory"},{"id":"https://openalex.org/G4850040225","display_name":null,"funder_award_id":"349807","funder_id":"https://openalex.org/F4320323299","funder_display_name":"Norges Forskningsr\u00e5d"},{"id":"https://openalex.org/G830101876","display_name":null,"funder_award_id":"80 NM0018D0004","funder_id":"https://openalex.org/F4320309398","funder_display_name":"California Institute of Technology"}],"funders":[{"id":"https://openalex.org/F4320309398","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055"},{"id":"https://openalex.org/F4320320924","display_name":"Schweizerischer Nationalfonds zur F\u00f6rderung der Wissenschaftlichen Forschung","ror":"https://ror.org/00yjd3n13"},{"id":"https://openalex.org/F4320321652","display_name":"Eidgen\u00f6ssische Technische Hochschule Z\u00fcrich","ror":"https://ror.org/05a28rw58"},{"id":"https://openalex.org/F4320322463","display_name":"Paul Scherrer Institut","ror":"https://ror.org/03eh3y714"},{"id":"https://openalex.org/F4320323260","display_name":"Universitetet i Oslo","ror":"https://ror.org/01xtthb56"},{"id":"https://openalex.org/F4320323299","display_name":"Norges Forskningsr\u00e5d","ror":"https://ror.org/00epmv149"},{"id":"https://openalex.org/F4320332375","display_name":"Jet Propulsion Laboratory","ror":"https://ror.org/027k65916"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7214050959.pdf","grobid_xml":"https://content.openalex.org/works/W7214050959.grobid-xml"},"referenced_works_count":1,"referenced_works":["https://openalex.org/W7214008210"],"related_works":["https://openalex.org/W1973151701","https://openalex.org/W3214184196","https://openalex.org/W2617487638","https://openalex.org/W7154705854","https://openalex.org/W2734325598","https://openalex.org/W2981135700","https://openalex.org/W1997418793","https://openalex.org/W3048733502","https://openalex.org/W2078376878","https://openalex.org/W2404091125"],"abstract_inverted_index":{"Optically":[0],"addressable":[1],"defect":[2,60,115],"spins":[3],"in":[4,22,39,96,165,197],"semiconductors":[5],"are":[6],"promising":[7],"building":[8],"blocks":[9],"for":[10,26],"scalable":[11],"quantum":[12,28,178],"technologies.":[13],"Yet,":[14],"the":[15,27,35,59,65,69,94,123,130,137,144,153,159,187],"consequences":[16],"of":[17,72,146,156,189],"conventional":[18],"contact":[19,53],"schemes":[20],"used":[21,52],"semiconductor":[23,198],"device":[24,174],"integration":[25],"spin":[29,61,76,184,195],"environment":[30,140],"remain":[31],"largely":[32],"unexplored.":[33],"Using":[34],"silicon":[36,40],"vacancy":[37],"(V$_\\mathrm{Si}$)":[38],"carbide":[41],"(SiC)":[42],"as":[43,103],"a":[44,50,84,118,147],"model":[45],"system,":[46],"we":[47],"show":[48],"that":[49,80,172],"widely":[51],"metal,":[54],"nickel":[55],"(Ni),":[56],"intrinsically":[57],"perturbs":[58],"state":[62,155],"and":[63,105,183],"quenches":[64],"characteristic":[66],"emission":[67],"from":[68,122,152],"spin-quartet":[70],"channel":[71],"V$_\\mathrm{Si}$.":[73],"Low-energy":[74],"muon":[75],"rotation":[77],"further":[78],"reveals":[79],"Ni":[81,131,160],"contacts":[82,101],"create":[83],"magnetically":[85],"contaminated":[86],"region":[87],"extending":[88],"at":[89],"least":[90],"$\\sim$110":[91],"nm":[92,128],"into":[93,180],"SiC,":[95],"stark":[97],"contrast":[98],"to":[99,126,192],"non-magnetic":[100],"such":[102],"Ti":[104],"Al.":[106],"Moreover,":[107],"cross-sectional":[108],"cathodoluminescence":[109],"measurements":[110],"on":[111,136],"samples":[112],"with":[113,150],"high":[114],"density":[116],"demonstrate":[117],"suppressed":[119],"quartet-state":[120],"luminescence":[121],"V$_\\mathrm{Si}$":[124,157],"up":[125],"500":[127],"beneath":[129],"contact.":[132],"This":[133],"drastic":[134],"influence":[135],"defect's":[138],"magnetic":[139],"is":[141],"accompanied":[142],"by":[143],"appearance":[145],"signature":[148],"consistent":[149],"photoluminescence":[151],"spin-doublet":[154],"under":[158],"layer,":[161],"which":[162],"was":[163],"absent":[164],"other":[166],"material":[167],"stacks.":[168],"These":[169],"results":[170],"establish":[171],"standard":[173],"configurations":[175],"can":[176],"drive":[177],"defects":[179],"unwanted":[181],"charge":[182],"configurations,":[185],"underscoring":[186],"necessity":[188],"precise":[190],"design":[191],"preserve":[193],"quantum-grade":[194],"environments":[196],"devices.":[199]},"counts_by_year":[],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2026-09-23T00:00:00"}