{"id":"https://openalex.org/W7213334536","doi":"https://doi.org/10.48550/arxiv.2609.15135","title":"Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure","display_name":"Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure","publication_year":2026,"publication_date":"2026-09-14","ids":{"openalex":"https://openalex.org/W7213334536","doi":"https://doi.org/10.48550/arxiv.2609.15135"},"language":"en","primary_location":{"id":"pmh:oai:arXiv.org:2609.15135","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.15135","pdf_url":"https://arxiv.org/pdf/2609.15135","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"volume":null,"type":"preprint","is_traditional":true,"indexed_in":["arxiv","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2609.15135","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5151727240","display_name":"Kai Jiang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiang, Kai","raw_affiliation_strings":["National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5151786793","display_name":"Chen Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wang, Chen","raw_affiliation_strings":["National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5151862160","display_name":"Ziheng Wang","orcid":"https://orcid.org/0009-0001-1582-2942","observed_orcids":["https://orcid.org/0009-0001-1582-2942"]},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wang, Ziheng","raw_affiliation_strings":["National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5139772200","display_name":"Zhiyu Lin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lin, Zhiyu","raw_affiliation_strings":["National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering , Shanghai Jiao Tong University , Shanghai , China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059106002","display_name":"Mengwei Si","orcid":"https://orcid.org/0000-0003-0397-7741","observed_orcids":["https://orcid.org/0000-0003-0397-7741"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Si, Mengwei","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8227999806404114,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8227999806404114,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.12999999523162842,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.028300000354647636,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/top-gate-transistors","display_name":"top-gate transistors","score":0.9259999990463257},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.7200000286102295},{"id":"https://openalex.org/keywords/lattice-matching","display_name":"lattice matching","score":0.9620000123977661},{"id":"https://openalex.org/keywords/epitaxial-crystallization","display_name":"epitaxial crystallization","score":0.8019999861717224},{"id":"https://openalex.org/keywords/oxygen-scavenging","display_name":"oxygen scavenging","score":0.7730000019073486},{"id":"https://openalex.org/keywords/interface-engineering","display_name":"interface engineering","score":0.6269999742507935},{"id":"https://openalex.org/keywords/threshold-voltage-roll-off","display_name":"threshold voltage roll-off","score":0.8019999861717224},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.5889999866485596},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.7329999804496765}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8253999948501587},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.637499988079071},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6191999912261963},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6168000102043152},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.569599986076355},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5309000015258789},{"id":"https://openalex.org/C61276311","wikidata":"https://www.wikidata.org/wiki/Q624543","display_name":"Monoclinic crystal system","level":3,"score":0.5198000073432922},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.48969998955726624},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.4677000045776367},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4043999910354614},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.397599995136261},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.3619000017642975},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.35989999771118164},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.336899995803833},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.33489999175071716},{"id":"https://openalex.org/C37243968","wikidata":"https://www.wikidata.org/wiki/Q648961","display_name":"Orthorhombic crystal system","level":3,"score":0.33160001039505005},{"id":"https://openalex.org/C2781204021","wikidata":"https://www.wikidata.org/wiki/Q6497091","display_name":"Lattice (music)","level":2,"score":0.32910001277923584},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.328900009393692},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.320499986410141},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.31929999589920044},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.3122999966144562},{"id":"https://openalex.org/C201370411","wikidata":"https://www.wikidata.org/wiki/Q388283","display_name":"Microcrystalline","level":2,"score":0.3093999922275543},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.3005000054836273},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.2973000109195709},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2712000012397766},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.2694000005722046},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.26579999923706055},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2644999921321869}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:arXiv.org:2609.15135","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.15135","pdf_url":"https://arxiv.org/pdf/2609.15135","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.2609.15135","doi":"https://doi.org/10.48550/arxiv.2609.15135","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2609.15135","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2609.15135","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.15135","pdf_url":"https://arxiv.org/pdf/2609.15135","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G234915527","display_name":null,"funder_award_id":"62274107","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3852078645","display_name":null,"funder_award_id":"STI2030","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4039596302","display_name":null,"funder_award_id":"21TQ1400212","funder_id":"https://openalex.org/F4320322999","funder_display_name":"Shanghai Jiao Tong University"},{"id":"https://openalex.org/G5369691468","display_name":null,"funder_award_id":"#92264204","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320322999","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7213334536.pdf","grobid_xml":"https://content.openalex.org/works/W7213334536.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4415879035","https://openalex.org/W7164034328","https://openalex.org/W4412449202","https://openalex.org/W4415707216","https://openalex.org/W4403022212","https://openalex.org/W4413186511","https://openalex.org/W4411979791","https://openalex.org/W3198729956","https://openalex.org/W7113505463","https://openalex.org/W3128233593"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"demonstrate":[4],"high-mobility":[5],"top-gate":[6],"(TG)":[7],"atomic-layer-deposited":[8],"(ALD)":[9],"crystalline":[10,82,170],"In2O3":[11,31,83,118,141,171],"transistors":[12,119,142,182],"through":[13],"simultaneous":[14],"interface":[15],"and":[16,42,58,130,159],"crystallinity":[17],"engineering.":[18],"First,":[19],"a":[20,113,123,131],"HfO2/In2O3/HfO2":[21],"stack":[22],"is":[23,52],"employed,":[24],"enabling":[25],"epitaxial-like":[26],"crystallization":[27],"of":[28,34,126,135,146,151,161],"the":[29,35,76,97],"ultrathin":[30],"channel,":[32],"because":[33],"lattice":[36],"matching":[37],"between":[38],"monoclinic":[39],"phase":[40,44],"HfO2":[41],"cubic":[43],"In2O3.":[45,111],"Second,":[46],"an":[47,173],"oxygen-rich":[48],"gate":[49,67],"insulator":[50],"process":[51],"applied":[53],"using":[54],"high-dose":[55],"O3":[56],"precursor":[57],"elevated":[59],"deposition":[60],"temperature,":[61],"effectively":[62],"suppressing":[63],"oxygen":[64,89],"scavenging":[65,90],"during":[66],"dielectric":[68],"deposition,":[69],"significantly":[70,95],"reducing":[71],"interfacial":[72],"defect":[73],"formation.":[74],"Third,":[75],"homogeneous":[77],"In-O":[78],"bonding":[79],"network":[80],"in":[81],"exhibits":[84],"substantially":[85],"enhanced":[86],"resistance":[87],"to":[88,99,109],"by":[91],"source/drain":[92],"contacts,":[93],"which":[94],"improves":[96],"immunity":[98],"threshold":[100],"voltage":[101],"(VTH)":[102],"roll-off":[103],"at":[104,149],"short":[105],"channel":[106],"length":[107],"compared":[108],"amorphous":[110],"As":[112],"result,":[114],"high-performance":[115],"TG":[116,139,180],"long-channel":[117],"are":[120,164],"achieved":[121],"with":[122,143],"high":[124,144],"mobility":[125],"163":[127],"cm2/V":[128],"s":[129],"steep":[132],"subthreshold":[133],"slope":[134],"64":[136],"mV/dec.":[137],"High-performance":[138],"short-channel":[140],"ION":[145],"1650":[147],"\u03bcA/\u03bcm":[148],"VD":[150],"1":[152],"V,":[153],"large":[154],"on/off":[155],"ratio":[156],"over":[157],"1010":[158],"VTH":[160],"-0.27":[162],"V":[163],"demonstrated.":[165],"These":[166],"results":[167],"establish":[168],"lattice-engineered":[169],"as":[172],"effective":[174],"strategy":[175],"for":[176,184],"high-mobility,":[177],"aggressively":[178],"scaled":[179],"oxide":[181],"suitable":[183],"BEOL-compatible":[185],"applications.":[186]},"counts_by_year":[],"updated_date":"2026-11-01T11:40:01.658920","created_date":"2026-09-16T00:00:00"}