{"id":"https://openalex.org/W7211896346","doi":"https://doi.org/10.48550/arxiv.2609.04655","title":"4 MV/cm (010) $\u03b2$-Ga$_2$O$_3$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO$_x$ Interlayers","display_name":"4 MV/cm (010) $\u03b2$-Ga$_2$O$_3$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO$_x$ Interlayers","publication_year":2026,"publication_date":"2026-09-04","ids":{"openalex":"https://openalex.org/W7211896346","doi":"https://doi.org/10.48550/arxiv.2609.04655"},"language":"en","primary_location":{"id":"pmh:oai:arXiv.org:2609.04655","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.04655","pdf_url":"https://arxiv.org/pdf/2609.04655","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"volume":null,"type":"preprint","indexed_in":["arxiv","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2609.04655","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010465245","display_name":"Carl Peterson","orcid":"https://orcid.org/0000-0003-1151-9003","observed_orcids":["https://orcid.org/0000-0003-1151-9003"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peterson, Carl","raw_affiliation_strings":["Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5134787618","display_name":"Yizheng Liu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Liu, Yizheng","raw_affiliation_strings":["Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020103561","display_name":"Chinmoy Nath Saha","orcid":"https://orcid.org/0000-0001-6201-7009","observed_orcids":["https://orcid.org/0000-0001-6201-7009"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saha, Chinmoy Nath","raw_affiliation_strings":["Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039100567","display_name":"Rachel Kahler","orcid":"https://orcid.org/0000-0003-0132-2733","observed_orcids":["https://orcid.org/0000-0003-0132-2733"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kahler, Rachel","raw_affiliation_strings":["Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010302648","display_name":"Akhila Mattapalli","orcid":"https://orcid.org/0000-0001-9474-6724","observed_orcids":["https://orcid.org/0000-0001-9474-6724"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mattapalli, Akhila","raw_affiliation_strings":["Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006650430","display_name":"Sriram Krishnamoorthy","orcid":"https://orcid.org/0000-0002-4682-1002","observed_orcids":["https://orcid.org/0000-0002-4682-1002"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Krishnamoorthy, Sriram","raw_affiliation_strings":["Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Department , University of California Santa Barbara , Santa Barbara , California , 93106 , USA","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I154570441"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.9169999957084656},{"id":"https://openalex.org/keywords/heterojunction-diodes","display_name":"heterojunction diodes","score":0.9319999814033508},{"id":"https://openalex.org/keywords/electron-beam-evaporation","display_name":"electron beam evaporation","score":0.8479999899864197},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"dielectric strength","score":0.6570000052452087},{"id":"https://openalex.org/keywords/power-figure-of-merit","display_name":"power figure of merit","score":0.9890000224113464},{"id":"https://openalex.org/keywords/silicon-doping","display_name":"silicon doping","score":0.5379999876022339},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.5320000052452087},{"id":"https://openalex.org/keywords/power-electronics","display_name":"power electronics","score":0.3240000009536743}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7825000286102295},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.777999997138977},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6837000250816345},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5769000053405762},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5554999709129333},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5232999920845032},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5230000019073486},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.4812000095844269},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4672999978065491},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.4431999921798706},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.41760000586509705},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.41359999775886536},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.39079999923706055},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.3626999855041504},{"id":"https://openalex.org/C50942859","wikidata":"https://www.wikidata.org/wiki/Q4967193","display_name":"Rectification","level":3,"score":0.3540000021457672},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.32989999651908875},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.31779998540878296},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.31769999861717224},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.3158000111579895},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.31459999084472656},{"id":"https://openalex.org/C38347018","wikidata":"https://www.wikidata.org/wiki/Q905958","display_name":"Plasma-enhanced chemical vapor deposition","level":3,"score":0.3077000081539154},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.2994999885559082},{"id":"https://openalex.org/C202374169","wikidata":"https://www.wikidata.org/wiki/Q124291","display_name":"Electrical conductor","level":2,"score":0.2833999991416931},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.26989999413490295},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.26910001039505005},{"id":"https://openalex.org/C66825105","wikidata":"https://www.wikidata.org/wiki/Q354718","display_name":"Sheet resistance","level":3,"score":0.26660001277923584},{"id":"https://openalex.org/C207521374","wikidata":"https://www.wikidata.org/wiki/Q7580282","display_name":"Spreading resistance profiling","level":3,"score":0.2621000111103058}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:arXiv.org:2609.04655","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.04655","pdf_url":"https://arxiv.org/pdf/2609.04655","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.2609.04655","doi":"https://doi.org/10.48550/arxiv.2609.04655","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2609.04655","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2609.04655","doi":null,"is_oa":true,"landing_page_url":"https://arxiv.org/abs/2609.04655","pdf_url":"https://arxiv.org/pdf/2609.04655","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3831127802","display_name":null,"funder_award_id":"DE-AR0001824","funder_id":"https://openalex.org/F4320332276","funder_display_name":"Advanced Research Projects Agency - Energy"}],"funders":[{"id":"https://openalex.org/F4320332276","display_name":"Advanced Research Projects Agency - Energy","ror":"https://ror.org/03q1rgc19"},{"id":"https://openalex.org/F4320332500","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463"},{"id":"https://openalex.org/F4320332815","display_name":"Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7211896346.pdf","grobid_xml":"https://content.openalex.org/works/W7211896346.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4403795671","https://openalex.org/W4406325624","https://openalex.org/W3049937630","https://openalex.org/W7159621867","https://openalex.org/W4400449152","https://openalex.org/W3163534070","https://openalex.org/W4414543038","https://openalex.org/W3180965683","https://openalex.org/W7213956915","https://openalex.org/W3042514039"],"abstract_inverted_index":{"We":[0],"report":[1],"on":[2,18,43,63,109,145,188],"the":[3,79,97,103,110,156],"utilization":[4],"of":[5,34,37,105,121,130,134,139,149,155,172,178],"a":[6,44,64,89,117,132,142,164,176,183],"low-damage":[7],"e-beam":[8,93],"NiO$_x$":[9,94,99],"deposition":[10,61],"process":[11],"to":[12,101,163],"realize":[13],"field-plated":[14],"heterojunction":[15],"diodes":[16,187],"(FP-HJDs)":[17],"(010)":[19,68,111,157,190],"$\u03b2$-Ga$_2$O$_3$":[20,67],"films":[21],"with":[22],"high":[23],"critical":[24],"breakdown":[25,170],"field":[26,168],"strengths":[27],"beyond":[28],"4":[29,125],"MV/cm":[30,174],"and":[31,76,141,175],"power":[32],"figure":[33],"merits":[35],"(PFOM)":[36],">1":[38],"GW/cm$^2$.":[39],"Diodes":[40],"were":[41],"fabricated":[42],"2.67":[45],"$\\times$":[46,152],"10$^{16}$":[47],"cm$^{-3}$":[48],"intentionally":[49],"doped":[50],"6.2":[51],"$\u03bc$m":[52],"thick":[53],"epitaxial":[54],"layer":[55],"grown":[56],"by":[57],"metalorganic":[58],"chemical":[59],"vapor":[60],"(MOCVD)":[62],"conductive":[65],"Sn-doped":[66],"substrate":[69],"using":[70],"TMGa,":[71],"O$_2$,":[72],"Ar":[73],"carrier":[74],"gas,":[75],"SiH$_4$":[77],"as":[78],"silicon":[80],"dopant":[81],"source.":[82],"The":[83],"mesa":[84],"etched":[85],"FP-HJD":[86],"devices":[87],"utilized":[88],"thin":[90],"7":[91],"nm":[92],"interlayer":[95],"before":[96],"sputtered":[98],"layers":[100],"eliminate":[102],"effects":[104],"sputter-induced":[106],"ion":[107],"damage":[108],"epilayers.":[112],"Current-Voltage":[113],"measurements":[114],"resulted":[115],"in":[116],"forward":[118],"current":[119],"density":[120],"700":[122],"A/cm$^2$":[123],"at":[124,169],"V,":[126,136],"HJD":[127],"ideality":[128],"factor":[129],"1.29,":[131],"V$_{bi}$":[133],"2":[135],"rectification":[137],"ratio":[138],"10$^{11}$,":[140],"differential":[143],"specific":[144],"resistance":[146],"(R$_{on,sp}$)":[147],"value":[148],"2.36":[150],"m$\u03a9$":[151],"cm$^2$.":[153],"Breakdown":[154],"FP-HJDs":[158],"was":[159],"1.64":[160],"kV,":[161],"leading":[162],"parallel":[165],"plane":[166],"electric":[167],"(E$_{||,max}$)":[171],"4.02":[173],"PFOM":[177],"1.14":[179],"GW/cm$^2$,":[180],"which":[181],"is":[182],"state-of-the-art":[184],"result":[185],"for":[186],"MOCVD-grown":[189],"drift":[191],"layers.":[192]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2026-09-08T00:00:00"}