{"id":"https://openalex.org/W7202356972","doi":"https://doi.org/10.1016/j.apsusc.2026.168116","title":"Enhanced thermal robustness of laminated Hf0.5Zr0.5O2 ferroelectric film via Al2O3 mid-layer engineering","display_name":"Enhanced thermal robustness of laminated Hf0.5Zr0.5O2 ferroelectric film via Al2O3 mid-layer engineering","publication_year":2026,"publication_date":"2026-08-13","ids":{"openalex":"https://openalex.org/W7202356972","doi":"https://doi.org/10.1016/j.apsusc.2026.168116"},"language":"en","primary_location":{"id":"doi:10.1016/j.apsusc.2026.168116","doi":"https://doi.org/10.1016/j.apsusc.2026.168116","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.apsusc.2026.168116","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065181469","display_name":"Seonggeun Kim","orcid":"https://orcid.org/0009-0000-2724-912X","observed_orcids":["https://orcid.org/0009-0000-2724-912X"]},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Seonggeun Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0000-2724-912X","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]},{"raw_affiliation_string":"Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067362607","display_name":"Seungwon Go","orcid":"https://orcid.org/0000-0003-3679-6381","observed_orcids":["https://orcid.org/0000-0003-3679-6381"]},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwon Go","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041784748","display_name":"Jangsaeng Kim","orcid":"https://orcid.org/0000-0003-4519-135X","observed_orcids":["https://orcid.org/0000-0003-4519-135X"]},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jangsaeng Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]},{"raw_affiliation_string":"Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126590372","display_name":"Sihyun Kim","orcid":"https://orcid.org/0000-0002-9199-4623","observed_orcids":["https://orcid.org/0000-0002-9199-4623"]},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sihyun Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]},{"raw_affiliation_string":"Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063522085","display_name":"Sangwan Kim","orcid":"https://orcid.org/0000-0002-6492-7740","observed_orcids":["https://orcid.org/0000-0002-6492-7740","https://orcid.org/0009-0009-5058-6760"]},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sangwan Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-6492-7740","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]},{"raw_affiliation_string":"Institute of Semiconductor Technologies, Sogang University, Seoul 04107, the Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5041784748","https://openalex.org/A5063522085","https://openalex.org/A5065181469","https://openalex.org/A5126590372"],"corresponding_institution_ids":["https://openalex.org/I148751991"],"apc_list":{"value":3930,"currency":"USD","value_usd":3930},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"751","issue":null,"first_page":"168116","last_page":"168116"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hf0-5zr0-5o2","display_name":"Hf0.5Zr0.5O2","score":0.9160000085830688},{"id":"https://openalex.org/keywords/ferroelectric-thin-films","display_name":"ferroelectric thin films","score":0.7820000052452087},{"id":"https://openalex.org/keywords/thermal-robustness","display_name":"temperature robustness","score":0.8090000152587891},{"id":"https://openalex.org/keywords/high-temperature-annealing","display_name":"high-temperature annealing","score":0.8220000267028809},{"id":"https://openalex.org/keywords/grain-growth-inhibition","display_name":"grain growth inhibition","score":0.7689999938011169},{"id":"https://openalex.org/keywords/aluminum-diffusion","display_name":"aluminum diffusion","score":0.640999972820282},{"id":"https://openalex.org/keywords/oxygen-diffusion-coefficient","display_name":"oxygen diffusion coefficient","score":0.8019999861717224},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.8379999995231628},{"id":"https://openalex.org/keywords/remanent-polarization","display_name":"remanent polarization","score":0.996999979019165},{"id":"https://openalex.org/keywords/coercive-voltage","display_name":"coercive voltage","score":0.9929999709129333},{"id":"https://openalex.org/keywords/ferroelectric-polarization-switching","display_name":"ferroelectric switching","score":0.7250000238418579},{"id":"https://openalex.org/keywords/dielectric-breakdown","display_name":"dielectric breakdown","score":0.8690000176429749}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7613000273704529},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6485999822616577},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.5770999789237976},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.5461000204086304},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5144000053405762},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41440001130104065},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.3513999879360199},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.32089999318122864},{"id":"https://openalex.org/C135628077","wikidata":"https://www.wikidata.org/wiki/Q220184","display_name":"Finite element method","level":2,"score":0.31209999322891235},{"id":"https://openalex.org/C59061564","wikidata":"https://www.wikidata.org/wiki/Q7783071","display_name":"Thermal stability","level":2,"score":0.3109000027179718},{"id":"https://openalex.org/C100082104","wikidata":"https://www.wikidata.org/wiki/Q183759","display_name":"Piezoelectricity","level":2,"score":0.27489998936653137},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.258899986743927},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.25130000710487366}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.apsusc.2026.168116","doi":"https://doi.org/10.1016/j.apsusc.2026.168116","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.apsusc.2026.168116","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5690000057220459,"id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[{"id":"https://openalex.org/G2643336817","display_name":null,"funder_award_id":"RS-2025-25433958","funder_id":"https://openalex.org/F4320321408","funder_display_name":"Ministry of Education"},{"id":"https://openalex.org/G3800596590","display_name":null,"funder_award_id":"IITP-2026-RS-2023-00260091","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G4508828515","display_name":null,"funder_award_id":"20022821","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G5995805984","display_name":null,"funder_award_id":"RS-2024-00408115","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G6754764365","display_name":null,"funder_award_id":"NRF-2022R1A2C2092727","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G6940113471","display_name":null,"funder_award_id":"IO260319-16082-01","funder_id":"https://openalex.org/F4320332195","funder_display_name":"Samsung"}],"funders":[{"id":"https://openalex.org/F4320321408","display_name":"Ministry of Education","ror":"https://ror.org/01p262204"},{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1976518187","https://openalex.org/W1993496899","https://openalex.org/W2030237677","https://openalex.org/W2077212619","https://openalex.org/W2322656210","https://openalex.org/W2524716827","https://openalex.org/W2893814120","https://openalex.org/W2987013952","https://openalex.org/W3005393103","https://openalex.org/W3112558661","https://openalex.org/W3118878912","https://openalex.org/W3133940875","https://openalex.org/W3134393951","https://openalex.org/W3186271703","https://openalex.org/W3209396457","https://openalex.org/W3210611313","https://openalex.org/W3214078221","https://openalex.org/W4221025951","https://openalex.org/W4291015586","https://openalex.org/W4392351656","https://openalex.org/W4392666345","https://openalex.org/W4392850116","https://openalex.org/W4402250029","https://openalex.org/W4405822947","https://openalex.org/W4410810328","https://openalex.org/W4411949903"],"related_works":["https://openalex.org/W7154706342","https://openalex.org/W4400525821","https://openalex.org/W3112558661","https://openalex.org/W2077212619","https://openalex.org/W7203838261","https://openalex.org/W2524716827","https://openalex.org/W4391741832","https://openalex.org/W4390284907","https://openalex.org/W4405483640","https://openalex.org/W7154681854"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2026-08-14T00:00:00"}