{"id":"https://openalex.org/W7202248457","doi":"https://doi.org/10.62051/ijmsts.v5n3.05","title":"Electrical characteristics and Thermoelectric Properties of LaZnSbO","display_name":"Electrical characteristics and Thermoelectric Properties of LaZnSbO","publication_year":2026,"publication_date":"2026-06-29","ids":{"openalex":"https://openalex.org/W7202248457","doi":"https://doi.org/10.62051/ijmsts.v5n3.05"},"language":"en","primary_location":{"id":"doi:10.62051/ijmsts.v5n3.05","doi":"https://doi.org/10.62051/ijmsts.v5n3.05","is_oa":true,"landing_page_url":"https://doi.org/10.62051/ijmsts.v5n3.05","pdf_url":"https://ijmsts.org/pdf/2026/10.62051-ijmsts.v5n3.05.pdf","source":{"id":"https://openalex.org/S5407043170","display_name":"International Journal of Materials Science and Technology Studies","issn_l":"3006-3744","issn":["3006-3744","3006-7693"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-nc","license_id":"https://openalex.org/licenses/cc-by-nc","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Materials Science and Technology Studies","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://ijmsts.org/pdf/2026/10.62051-ijmsts.v5n3.05.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5146976360","display_name":"Jian Liu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210141223","display_name":"Baise University","ror":"https://ror.org/03f3rne76","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210141223"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jian Liu","raw_affiliation_strings":["College of Mathematical Sciences and Statistics , Baise University , Baise , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Mathematical Sciences and Statistics , Baise University , Baise , China","institution_ids":["https://openalex.org/I4210141223"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5146976360"],"corresponding_institution_ids":["https://openalex.org/I4210141223"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.45277453,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"5","issue":"3","first_page":"36","last_page":"41"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13251","display_name":"Electrical and Thermal Properties of Materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thermoelectric-properties","display_name":"thermoelectric properties","score":0.9580000042915344},{"id":"https://openalex.org/keywords/thermoelectric-figure-of-merit","display_name":"figure of merit ZT","score":0.8109999895095825},{"id":"https://openalex.org/keywords/seebeck-coefficient","display_name":"Seebeck coefficient","score":0.7419999837875366},{"id":"https://openalex.org/keywords/power-factor","display_name":"power factor","score":0.9100000262260437},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.7940000295639038},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.9750000238418579},{"id":"https://openalex.org/keywords/band-structure","display_name":"electronic band structure","score":0.6819999814033508},{"id":"https://openalex.org/keywords/direct-band-gap-semiconductors","display_name":"direct bandgap semiconductors","score":0.8730000257492065},{"id":"https://openalex.org/keywords/p-type-doping","display_name":"p-type doping","score":0.824999988079071},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.753000020980835},{"id":"https://openalex.org/keywords/superlattices","display_name":"superlattices","score":0.6639999747276306}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.758899986743927},{"id":"https://openalex.org/C63024428","wikidata":"https://www.wikidata.org/wiki/Q552456","display_name":"Thermoelectric effect","level":2,"score":0.7588000297546387},{"id":"https://openalex.org/C112625512","wikidata":"https://www.wikidata.org/wiki/Q1091448","display_name":"Seebeck coefficient","level":3,"score":0.7534999847412109},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6220999956130981},{"id":"https://openalex.org/C207365445","wikidata":"https://www.wikidata.org/wiki/Q15020929","display_name":"Thermoelectric materials","level":3,"score":0.6183000206947327},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5895000100135803},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.5767999887466431},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.5690000057220459},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.557200014591217},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5493000149726868},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4927999973297119},{"id":"https://openalex.org/C125469278","wikidata":"https://www.wikidata.org/wiki/Q806380","display_name":"Electronic band structure","level":2,"score":0.40130001306533813},{"id":"https://openalex.org/C131540310","wikidata":"https://www.wikidata.org/wiki/Q907564","display_name":"Conductivity","level":2,"score":0.3569999933242798},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.32839998602867126},{"id":"https://openalex.org/C64424096","wikidata":"https://www.wikidata.org/wiki/Q750454","display_name":"Power factor","level":3,"score":0.3089999854564667},{"id":"https://openalex.org/C53964469","wikidata":"https://www.wikidata.org/wiki/Q230895","display_name":"Density of states","level":2,"score":0.30730000138282776},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.3034000098705292},{"id":"https://openalex.org/C2781204021","wikidata":"https://www.wikidata.org/wiki/Q6497091","display_name":"Lattice (music)","level":2,"score":0.2856000065803528},{"id":"https://openalex.org/C117127486","wikidata":"https://www.wikidata.org/wiki/Q11569191","display_name":"Thermoelectric generator","level":3,"score":0.2745000123977661},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.2646999955177307},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.26190000772476196},{"id":"https://openalex.org/C193154288","wikidata":"https://www.wikidata.org/wiki/Q959336","display_name":"Direct and indirect band gaps","level":3,"score":0.25369998812675476}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.62051/ijmsts.v5n3.05","doi":"https://doi.org/10.62051/ijmsts.v5n3.05","is_oa":true,"landing_page_url":"https://doi.org/10.62051/ijmsts.v5n3.05","pdf_url":"https://ijmsts.org/pdf/2026/10.62051-ijmsts.v5n3.05.pdf","source":{"id":"https://openalex.org/S5407043170","display_name":"International Journal of Materials Science and Technology Studies","issn_l":"3006-3744","issn":["3006-3744","3006-7693"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-nc","license_id":"https://openalex.org/licenses/cc-by-nc","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Materials Science and Technology Studies","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.62051/ijmsts.v5n3.05","doi":"https://doi.org/10.62051/ijmsts.v5n3.05","is_oa":true,"landing_page_url":"https://doi.org/10.62051/ijmsts.v5n3.05","pdf_url":"https://ijmsts.org/pdf/2026/10.62051-ijmsts.v5n3.05.pdf","source":{"id":"https://openalex.org/S5407043170","display_name":"International Journal of Materials Science and Technology Studies","issn_l":"3006-3744","issn":["3006-3744","3006-7693"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-nc","license_id":"https://openalex.org/licenses/cc-by-nc","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Materials Science and Technology Studies","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7202248457.pdf","grobid_xml":"https://content.openalex.org/works/W7202248457.grobid-xml"},"referenced_works_count":8,"referenced_works":["https://openalex.org/W1985628158","https://openalex.org/W1999242781","https://openalex.org/W2010246068","https://openalex.org/W2121817924","https://openalex.org/W2261970498","https://openalex.org/W2778086665","https://openalex.org/W2964221950","https://openalex.org/W4400260296"],"related_works":["https://openalex.org/W4402691576","https://openalex.org/W2090337436","https://openalex.org/W4387533566","https://openalex.org/W2063391978","https://openalex.org/W3214958781","https://openalex.org/W3119303916","https://openalex.org/W2016215571","https://openalex.org/W4309455777","https://openalex.org/W3000490190","https://openalex.org/W2966401202"],"abstract_inverted_index":{"Using":[0],"density":[1],"functional":[2],"theory":[3],"calculations,":[4],"the":[5,66,70],"thermoelectric":[6,94],"properties":[7],"of":[8,46,62,78,82,88,96,103],"LaZnSbO":[9,16],"have":[10],"been":[11],"systematically":[12],"investigated.":[13],"The":[14,31],"bulk":[15],"features":[17],"a":[18,38,43,60,75,80,85,91,93,100],"natural":[19],"super":[20],"lattice":[21],"structure":[22,33],"with":[23],"low":[24,28],"electrical":[25],"conductivity":[26,52,81],"and":[27,53,84],"thermal":[29],"conductivity.":[30],"band":[32,44],"reveals":[34],"that":[35],"it":[36],"is":[37],"direct":[39],"gap":[40,45],"semiconductor":[41],"having":[42],"0.73eV.":[47],"Doping":[48],"can":[49],"enhance":[50],"its":[51,56],"thereby":[54],"raise":[55],"ZT":[57],"value.":[58],"At":[59],"temperature":[61],"900K,":[63],"close":[64],"to":[65],"carrier":[67],"concentration":[68],"2.5\u00d71019/cm3,":[69],"p-type":[71],"doped":[72],"system":[73],"shows":[74],"Seebeck":[76],"coefficient":[77],"313\u03bcV\u03ba-1,":[79],"2.06\u00d7104Sm-1":[83],"power":[86],"factor":[87],"0.78\u00d710-3Wm-1\u03ba-2.":[89],"As":[90],"result,":[92],"figure":[95],"merit":[97],"(ZT)":[98],"reaches":[99],"maximum":[101],"value":[102],"1.43.":[104]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2026-08-13T00:00:00"}