{"id":"https://openalex.org/W71684433","doi":null,"title":"Impurity diffusion and gettering in silicon","display_name":"Impurity diffusion and gettering in silicon","publication_year":1985,"publication_date":"1985-01-01","ids":{"openalex":"https://openalex.org/W71684433","mag":"71684433"},"language":"en","primary_location":{"id":"mag:71684433","doi":null,"is_oa":false,"landing_page_url":"http://www.osti.gov/scitech/biblio/5777359","pdf_url":null,"source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"volume":null,"type":"article","indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006448685","display_name":"Richard B. Fair","orcid":"https://orcid.org/0000-0002-6728-1199","observed_orcids":["https://orcid.org/0000-0002-6728-1199"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Richard B. Fair","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0002-6728-1199","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113871648","display_name":"Charles William Pearce","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Charles Pearce","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5071018922","display_name":"Jack Washburn","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Washburn","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":21.0827,"has_fulltext":false,"cited_by_count":122,"citation_normalized_percentile":{"value":0.99760059,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9282000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9282000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.06369999796152115,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0066999997943639755,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/impurity-diffusion","display_name":"impurity diffusion","score":0.9449999928474426},{"id":"https://openalex.org/keywords/gettering","display_name":"gettering","score":0.9160000085830688},{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.984000027179718},{"id":"https://openalex.org/keywords/oxygen-in-silicon","display_name":"oxygen in silicon","score":0.7940000295639038},{"id":"https://openalex.org/keywords/self-interstitials","display_name":"self-interstitials","score":0.8579999804496765},{"id":"https://openalex.org/keywords/vacancies","display_name":"vacancies","score":0.8489999771118164},{"id":"https://openalex.org/keywords/point-defects","display_name":"point defects","score":0.9139999747276306},{"id":"https://openalex.org/keywords/metal-impurities","display_name":"metal impurities","score":0.7239999771118164},{"id":"https://openalex.org/keywords/nickel","display_name":"nickel","score":0.890999972820282},{"id":"https://openalex.org/keywords/gold","display_name":"gold","score":0.9990000128746033},{"id":"https://openalex.org/keywords/iron","display_name":"iron","score":1.0},{"id":"https://openalex.org/keywords/oxygen-precipitates","display_name":"oxygen precipitates","score":0.7170000076293945},{"id":"https://openalex.org/keywords/denuded-zone","display_name":"denuded zone","score":0.5730000138282776},{"id":"https://openalex.org/keywords/pressure-dependence-of-diffusion","display_name":"pressure dependence of diffusion","score":0.9309999942779541},{"id":"https://openalex.org/keywords/ion-implantation-damage","display_name":"ion implantation damage","score":0.8600000143051147}],"concepts":[{"id":"https://openalex.org/C125099081","wikidata":"https://www.wikidata.org/wiki/Q935396","display_name":"Getter","level":2,"score":0.9257405996322632},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.8231104612350464},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.7798043489456177},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7028563618659973},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.6277831792831421},{"id":"https://openalex.org/C61048295","wikidata":"https://www.wikidata.org/wiki/Q909022","display_name":"Nucleation","level":2,"score":0.5434683561325073},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.49694326519966125},{"id":"https://openalex.org/C107054158","wikidata":"https://www.wikidata.org/wiki/Q25257","display_name":"Precipitation","level":2,"score":0.48301801085472107},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.46757984161376953},{"id":"https://openalex.org/C164675345","wikidata":"https://www.wikidata.org/wiki/Q898226","display_name":"Crystallographic defect","level":2,"score":0.42096197605133057},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.41925501823425293},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.4112429618835449},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.32407790422439575},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.3099561333656311},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.25713372230529785},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2323220670223236},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21442753076553345},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1941649317741394},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.15408959984779358},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:71684433","doi":null,"is_oa":false,"landing_page_url":"http://www.osti.gov/scitech/biblio/5777359","pdf_url":null,"source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2033267726","https://openalex.org/W2334852252","https://openalex.org/W2327391121","https://openalex.org/W596937643","https://openalex.org/W2137432552","https://openalex.org/W1984861665","https://openalex.org/W1988130077","https://openalex.org/W2109297136","https://openalex.org/W7066679039","https://openalex.org/W2000867576"],"abstract_inverted_index":{"These":[0],"proceedings":[1],"collect":[2],"papers":[3],"on":[4,104],"semiconductors.":[5],"Topics":[6],"include":[7],"impurity":[8,34,123],"behavior,":[9],"diffusion":[10,124,142],"and":[11,16,29,40,64,90,101,109,120,131,138,172],"oxygen":[12,161,175],"in":[13,20,75,99,162],"silicon.":[14,76,163],"Precipitation":[15],"complexing":[17],"of":[18,43,61,72,78,96,118,141,174],"metals":[19],"silicon":[21,100],"as":[22,24,85,125,127],"well":[23,126],"their":[25,102,128],"electrical":[26],"activity,":[27],"solubility":[28],"diffusivity.":[30],"Analytical":[31],"techniques":[32],"for":[33],"mapping":[35],"or":[36],"detection":[37],"were":[38,82],"compared":[39],"the":[41,70,115,136,153],"importance":[42],"using":[44],"several":[45],"analytical":[46],"tools":[47],"are":[48,52,158,177],"stressed.":[49],"Gettering":[50],"processes":[51],"also":[53],"discussed.":[54,112],"Evidence":[55],"is":[56,111,143],"presented":[57,83],"that":[58],"shows":[59],"gettering":[60,79,110],"Ni,":[62],"Au":[63],"Fe":[65],"to":[66,122,160],"be":[67,150],"governed":[68],"by":[69],"availability":[71],"self":[73],"interstitials":[74],"Methods":[77],"metallic":[80],"impurities":[81],"such":[84],"deposited":[86],"films,":[87],"implantation":[88],"damage":[89],"epitaxial":[91],"misfit":[92],"dislocations.":[93],"The":[94],"role":[95],"point":[97],"defects":[98],"influence":[103],"diffusion,":[105],"extrinsic":[106],"defect":[107],"growth":[108,173],"Questions":[113],"addressed":[114],"relative":[116],"contributions":[117],"vacancies":[119],"self-interstitials":[121],"own":[129],"diffusivities":[130],"concentrations.":[132],"New":[133],"data":[134],"regarding":[135,152,165],"strain":[137],"pressure":[139],"dependence":[140],"presented,":[144],"but":[145],"no":[146],"definitive":[147],"conclusions":[148],"can":[149],"made":[151],"mechanisms":[154],"involved.":[155],"Two":[156],"sessions":[157],"devoted":[159],"Mechanisms":[164],"intrinsic":[166],"gettering,":[167],"denuded":[168],"zone":[169],"formation,":[170],"nucleation":[171],"precipitates":[176],"addressed.":[178]},"counts_by_year":[{"year":2014,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}