{"id":"https://openalex.org/W7166330603","doi":"https://doi.org/10.1021/acsaelm.6c00504","title":"Interfacial and Bulk Switching MoS 2 Memristors for an All-2D Reservoir Computing Framework","display_name":"Interfacial and Bulk Switching MoS 2 Memristors for an All-2D Reservoir Computing Framework","publication_year":2026,"publication_date":"2026-06-27","ids":{"openalex":"https://openalex.org/W7166330603","doi":"https://doi.org/10.1021/acsaelm.6c00504"},"language":"en","primary_location":{"id":"doi:10.1021/acsaelm.6c00504","doi":"https://doi.org/10.1021/acsaelm.6c00504","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsaelm.6c00504","pdf_url":null,"source":{"id":"https://openalex.org/S4210217399","display_name":"ACS Applied Electronic Materials","issn_l":"2637-6113","issn":["2637-6113"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Electronic Materials","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084323765","display_name":"Asmita S. Thool","orcid":"https://orcid.org/0000-0002-3486-9826","observed_orcids":["https://orcid.org/0000-0002-3486-9826"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Asmita S. Thool","raw_affiliation_strings":["Department of Electrical Engineering","Indian Institute of Technology Madras"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering","institution_ids":[]},{"raw_affiliation_string":"Indian Institute of Technology Madras","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010302682","display_name":"Sourodeep Roy","orcid":"https://orcid.org/0000-0002-9321-1880","observed_orcids":["https://orcid.org/0000-0002-9321-1880"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sourodeep Roy","raw_affiliation_strings":["Department of Electrical Engineering","Indian Institute of Technology Madras"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering","institution_ids":[]},{"raw_affiliation_string":"Indian Institute of Technology Madras","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014592173","display_name":"Prahalad Kanti Barman","orcid":"https://orcid.org/0000-0003-2011-2344","observed_orcids":["https://orcid.org/0000-0003-2011-2344"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Prahalad Kanti Barman","raw_affiliation_strings":["Department of Physics","Indian Institute of Technology Madras"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics","institution_ids":[]},{"raw_affiliation_string":"Indian Institute of Technology Madras","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004507720","display_name":"Kartick Biswas","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I59270414","display_name":"Indian Institute of Science Bangalore","ror":"https://ror.org/04dese585","country_code":"IN","type":"education","lineage":["https://openalex.org/I59270414"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kartick Biswas","raw_affiliation_strings":["Center for Nano Science and Engineering, Indian Institute of Science"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nano Science and Engineering, Indian Institute of Science","institution_ids":["https://openalex.org/I59270414"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027641599","display_name":"Pavan Nukala","orcid":"https://orcid.org/0000-0002-3988-4224","observed_orcids":["https://orcid.org/0000-0002-3988-4224"]},"institutions":[{"id":"https://openalex.org/I59270414","display_name":"Indian Institute of Science Bangalore","ror":"https://ror.org/04dese585","country_code":"IN","type":"education","lineage":["https://openalex.org/I59270414"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Pavan Nukala","raw_affiliation_strings":["Center for Nano Science and Engineering, Indian Institute of Science"],"raw_orcid":"https://orcid.org/0000-0002-3988-4224","affiliations":[{"raw_affiliation_string":"Center for Nano Science and Engineering, Indian Institute of Science","institution_ids":["https://openalex.org/I59270414"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082138846","display_name":"Abhishek Misra","orcid":"https://orcid.org/0000-0001-7333-1810","observed_orcids":["https://orcid.org/0000-0001-7333-1810"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Abhishek Misra","raw_affiliation_strings":["Department of Physics","Indian Institute of Technology Madras"],"raw_orcid":"https://orcid.org/0000-0001-7333-1810","affiliations":[{"raw_affiliation_string":"Department of Physics","institution_ids":[]},{"raw_affiliation_string":"Indian Institute of Technology Madras","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011415435","display_name":"Saptarshi Das","orcid":"https://orcid.org/0000-0002-0188-945X","observed_orcids":["https://orcid.org/0000-0002-0188-945X"]},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saptarshi Das","raw_affiliation_strings":["The Pennsylvania State University"],"raw_orcid":"https://orcid.org/0000-0002-0188-945X","affiliations":[{"raw_affiliation_string":"The Pennsylvania State University","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022757145","display_name":"Bhaswar Chakrabarti","orcid":"https://orcid.org/0000-0003-0623-3895","observed_orcids":["https://orcid.org/0000-0003-0623-3895"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Bhaswar Chakrabarti","raw_affiliation_strings":["Department of Electrical Engineering","Indian Institute of Technology Madras"],"raw_orcid":"https://orcid.org/0000-0003-0623-3895","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering","institution_ids":[]},{"raw_affiliation_string":"Indian Institute of Technology Madras","institution_ids":["https://openalex.org/I24676775"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5022757145"],"corresponding_institution_ids":["https://openalex.org/I24676775"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.40344444,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12611","display_name":"Neural Networks and Reservoir Computing","score":0.0,"subfield":{"id":"https://openalex.org/subfields/1702","display_name":"Artificial Intelligence"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-switching","display_name":"resistive switching","score":0.6179999709129333},{"id":"https://openalex.org/keywords/reservoir-computing","display_name":"reservoir computing","score":0.6330000162124634},{"id":"https://openalex.org/keywords/short-term-memory","display_name":"short-term memory","score":0.7289999723434448},{"id":"https://openalex.org/keywords/long-term-potentiation","display_name":"long-term potentiation","score":0.5830000042915344},{"id":"https://openalex.org/keywords/long-term-depression","display_name":"long-term depression","score":0.6990000009536743},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.6539999842643738},{"id":"https://openalex.org/keywords/monolayer-mos2","display_name":"monolayer MoS2","score":0.7480000257492065},{"id":"https://openalex.org/keywords/multilayer-mos2","display_name":"multilayer MoS2","score":0.9850000143051147},{"id":"https://openalex.org/keywords/synaptic-arrays","display_name":"synaptic arrays","score":0.550000011920929},{"id":"https://openalex.org/keywords/spoken-digit-recognition","display_name":"spoken digit recognition","score":0.7960000038146973}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9449999928474426},{"id":"https://openalex.org/C135796866","wikidata":"https://www.wikidata.org/wiki/Q7315328","display_name":"Reservoir computing","level":4,"score":0.8001999855041504},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.6485000252723694},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.609499990940094},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5127000212669373},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.47769999504089355},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.4666999876499176},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4596000015735626},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.4388999938964844},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.438400000333786},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4381999969482422},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3898000121116638},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.3887999951839447},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.3853999972343445},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.3695000112056732},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.35440000891685486},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3456999957561493},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.3449999988079071},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.3409000039100647},{"id":"https://openalex.org/C3019721787","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Fast switching","level":3,"score":0.2935999929904938},{"id":"https://openalex.org/C6518042","wikidata":"https://www.wikidata.org/wiki/Q175646","display_name":"Scanning tunneling microscope","level":2,"score":0.29339998960494995},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.28679999709129333},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.28529998660087585},{"id":"https://openalex.org/C2778956022","wikidata":"https://www.wikidata.org/wiki/Q4411675","display_name":"Break junction","level":3,"score":0.2840999960899353},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.2809000015258789},{"id":"https://openalex.org/C3020444241","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"High resistance","level":2,"score":0.2750999927520752},{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.2745000123977661},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.2685000002384186},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.26829999685287476},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.2662999927997589},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2644999921321869},{"id":"https://openalex.org/C202374169","wikidata":"https://www.wikidata.org/wiki/Q124291","display_name":"Electrical conductor","level":2,"score":0.258899986743927},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.25839999318122864},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.25440001487731934},{"id":"https://openalex.org/C145912823","wikidata":"https://www.wikidata.org/wiki/Q113558","display_name":"Dynamics (music)","level":2,"score":0.25189998745918274}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1021/acsaelm.6c00504","doi":"https://doi.org/10.1021/acsaelm.6c00504","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsaelm.6c00504","pdf_url":null,"source":{"id":"https://openalex.org/S4210217399","display_name":"ACS Applied Electronic Materials","issn_l":"2637-6113","issn":["2637-6113"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G4500387726","display_name":null,"funder_award_id":"SRG/2020/001126","funder_id":"https://openalex.org/F4320334771","funder_display_name":"Science and Engineering Research Board"}],"funders":[{"id":"https://openalex.org/F4320322211","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49"},{"id":"https://openalex.org/F4320334771","display_name":"Science and Engineering Research Board","ror":"https://ror.org/03ffdsr55"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W2013656496","https://openalex.org/W2097228199","https://openalex.org/W2169762136","https://openalex.org/W2294914215","https://openalex.org/W2766607508","https://openalex.org/W2772397789","https://openalex.org/W2774297425","https://openalex.org/W2805779058","https://openalex.org/W2902564794","https://openalex.org/W2916924271","https://openalex.org/W2979589704","https://openalex.org/W3008714810","https://openalex.org/W3098785824","https://openalex.org/W3122214732","https://openalex.org/W3160268997","https://openalex.org/W3175838994","https://openalex.org/W3214815846","https://openalex.org/W4211210177","https://openalex.org/W4249247695","https://openalex.org/W4297224585","https://openalex.org/W4312549925","https://openalex.org/W4360999042","https://openalex.org/W4386727618","https://openalex.org/W4391404717","https://openalex.org/W4392498941","https://openalex.org/W4395453639","https://openalex.org/W4401363184","https://openalex.org/W4408769798"],"related_works":[],"abstract_inverted_index":{"In":[0],"this":[1],"study,":[2],"we":[3,134],"report":[4],"non-filamentary":[5,197],"resistance":[6,44,53,100],"switching":[7,45,54,83,101],"with":[8,46,55,87,124,193],"short-":[9],"and":[10,42,51,72,114,150,180],"long-term":[11,116],"memory":[12,48],"dynamics":[13,22],"in":[14,84,164,175],"Au/Ti/MoS":[15],"2":[16,34,38,66,86,112,121],"/Au":[17],"memristive":[18,67,122,198],"devices.":[19,68],"The":[20,119],"temporal":[21],"is":[23,59],"engineered":[24],"by":[25,142],"controlling":[26],"the":[27,30,62,81,151,171,177,181,187],"thickness":[28],"of":[29,110,189],"chemical-vapor-deposited":[31],"(CVD)":[32],"MoS":[33,65],"films.":[35],"Monolayer":[36],"(1L)-MoS":[37],"devices":[39,123,199],"exhibit":[40],"forming-free":[41],"unipolar":[43],"short-term":[47],"(STM).":[49],"Bipolar":[50],"non-volatile":[52,82],"outstanding":[56],"cycle-to-cycle":[57,173],"uniformity":[58,174],"observed":[60],"for":[61],"multilayer":[63],"(ML)":[64],"Detailed":[69],"transport":[70],"analysis":[71],"high-resolution":[73],"scanning":[74],"tunneling":[75],"electron":[76],"microscopy":[77],"(HRSTEM)":[78],"studies":[79],"correlate":[80],"ML-MoS":[85,111],"a":[88,98,105,136,165,201],"trap-assisted":[89],"space":[90],"charge":[91],"limited":[92],"conduction":[93],"(SCLC)":[94],"mechanism,":[95],"leading":[96],"to":[97,128,170],"bulk-limited":[99],"behavior.":[102,118],"We":[103],"fabricate":[104],"16":[106,108,152,154],"\u00d7":[107,153],"array":[109],"memristors":[113],"demonstrate":[115],"potentiation/depression":[117],"1L-MoS":[120],"STM":[125],"are":[126],"used":[127],"generate":[129],"four-bit":[130],"reservoir":[131,138,148,178],"states.":[132],"Finally,":[133],"simulate":[135],"small":[137,158],"computing":[139],"(RC)":[140],"framework":[141],"using":[143,196],"experimental":[144],"data":[145],"from":[146],"5":[147],"neurons":[149,179],"synaptic":[155,182],"array.":[156,183],"This":[157],"RC":[159],"network":[160],"achieves":[161],"89.56%":[162],"accuracy":[163],"spoken-digit":[166],"recognition":[167],"task,":[168],"owing":[169],"excellent":[172],"both":[176],"Our":[184],"work":[185],"demonstrates":[186],"possibility":[188],"creating":[190],"neural":[191],"networks":[192],"reliable":[194],"performance":[195],"on":[200],"single":[202],"2D-material":[203],"platform.":[204]},"counts_by_year":[],"updated_date":"2026-08-25T07:29:55.448023","created_date":"2026-06-28T00:00:00"}