{"id":"https://openalex.org/W7144058630","doi":"https://doi.org/10.15002/00031748","title":"ELECTRICAL PROPERTIES OF Si ION-IMPLANTED GaN MISFET","display_name":"ELECTRICAL PROPERTIES OF Si ION-IMPLANTED GaN MISFET","publication_year":2013,"publication_date":"2013-02-01","ids":{"openalex":"https://openalex.org/W7144058630","doi":"https://doi.org/10.15002/00031748"},"language":"en","primary_location":{"id":"pmh:oai:irdb.nii.ac.jp:01357:0006948911","doi":"https://doi.org/10.15002/00031748","is_oa":true,"landing_page_url":"https://hdl.handle.net/10114/00031748","pdf_url":"https://hosei.ecats-library.jp/da/repository/00031748/31st_11.pdf","source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"PROCEEDINGS OF THE 31st SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 5, 2012)","raw_type":"departmental bulletin paper"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://hosei.ecats-library.jp/da/repository/00031748/31st_11.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049108574","display_name":"Hayao Kasai","orcid":"https://orcid.org/0009-0008-1895-6154","observed_orcids":["https://orcid.org/0009-0008-1895-6154"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kasai, Hayao","raw_affiliation_strings":["Dept. of Electronics, Electrical Engineering , Hosei University , Koganei , Tokyo , Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics, Electrical Engineering , Hosei University , Koganei , Tokyo , Japan","institution_ids":["https://openalex.org/I204291657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003448127","display_name":"Hiroki Ogawa","orcid":"https://orcid.org/0000-0002-6990-8311","observed_orcids":["https://orcid.org/0000-0002-6990-8311"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ogawa, Hiroki","raw_affiliation_strings":["Dept. of Electronics, Electrical Engineering , Hosei University , Koganei , Tokyo , Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics, Electrical Engineering , Hosei University , Koganei , Tokyo , Japan","institution_ids":["https://openalex.org/I204291657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021032119","display_name":"Kazuki Nomoto","orcid":"https://orcid.org/0000-0003-0554-6128","observed_orcids":["https://orcid.org/0000-0003-0554-6128"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Nomoto, Kazuki","raw_affiliation_strings":["Research Center for Micro-Nano Technology , Hosei University , Koganei , Tokyo , Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Micro-Nano Technology , Hosei University , Koganei , Tokyo , Japan","institution_ids":["https://openalex.org/I204291657"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5131091005","display_name":"Tohru Nakamura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Nakamura, Tohru","raw_affiliation_strings":["Dept. of Electronics, Electrical Engineering , Hosei University , Koganei , Tokyo , Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics, Electrical Engineering , Hosei University , Koganei , Tokyo , Japan","institution_ids":["https://openalex.org/I204291657"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I204291657"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"31","issue":null,"first_page":"51","last_page":"54"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0015999999595806003,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-ion-implantation","display_name":"silicon ion implantation","score":0.9399999976158142},{"id":"https://openalex.org/keywords/normally-off-transistors","display_name":"normally-off transistors","score":0.5870000123977661},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.8849999904632568},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.9959999918937683},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.9860000014305115},{"id":"https://openalex.org/keywords/gate-length","display_name":"gate length","score":0.6589999794960022},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.6420000195503235}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.682200014591217},{"id":"https://openalex.org/C2778673556","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MISFET","level":5,"score":0.6643000245094299},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5838000178337097},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.2919999957084656},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2802000045776367},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.2612999975681305},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.2599000036716461},{"id":"https://openalex.org/C2989315489","wikidata":"https://www.wikidata.org/wiki/Q2659774","display_name":"Semiconductor materials","level":3,"score":0.24889999628067017},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.24779999256134033},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.23720000684261322}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:irdb.nii.ac.jp:01357:0006948911","doi":"https://doi.org/10.15002/00031748","is_oa":true,"landing_page_url":"https://hdl.handle.net/10114/00031748","pdf_url":"https://hosei.ecats-library.jp/da/repository/00031748/31st_11.pdf","source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"PROCEEDINGS OF THE 31st SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 5, 2012)","raw_type":"departmental bulletin paper"}],"best_oa_location":{"id":"pmh:oai:irdb.nii.ac.jp:01357:0006948911","doi":"https://doi.org/10.15002/00031748","is_oa":true,"landing_page_url":"https://hdl.handle.net/10114/00031748","pdf_url":"https://hosei.ecats-library.jp/da/repository/00031748/31st_11.pdf","source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"PROCEEDINGS OF THE 31st SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 5, 2012)","raw_type":"departmental bulletin paper"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7144058630.pdf","grobid_xml":"https://content.openalex.org/works/W7144058630.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2864279818","https://openalex.org/W7144284908","https://openalex.org/W7143831108","https://openalex.org/W2811469505","https://openalex.org/W2320958922","https://openalex.org/W7207559739","https://openalex.org/W1981454438","https://openalex.org/W7207796394","https://openalex.org/W2623281283","https://openalex.org/W2610706350"],"abstract_inverted_index":{"I-V":[0],"characteristics":[1],"of":[2,12,16,22,34],"Si":[3],"ion":[4],"implanted":[5],"normally-off":[6],"GaN":[7,28],"MISFET":[8],"were":[9,25],"demonstrated.":[10],"I_dss":[11],"94.3":[13],"mA/mm,":[14],"g_mmax":[15],"36.9":[17],"mS/mm":[18],"and":[19],"threshold":[20],"voltage":[21],"+1.5":[23],"V":[24],"obtained":[26],"for":[27],"MISFETs":[29],"with":[30],"a":[31],"gate":[32],"length":[33],"0.6":[35],"\u03bcm.":[36]},"counts_by_year":[],"updated_date":"2026-11-13T13:42:25.865203","created_date":"2026-04-01T00:00:00"}