{"id":"https://openalex.org/W7129094100","doi":"https://doi.org/10.3390/ma19040766","title":"Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs","display_name":"Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs","publication_year":2026,"publication_date":"2026-02-15","ids":{"openalex":"https://openalex.org/W7129094100","doi":"https://doi.org/10.3390/ma19040766","pmid":"https://pubmed.ncbi.nlm.nih.gov/41753485"},"language":"en","primary_location":{"id":"doi:10.3390/ma19040766","doi":"https://doi.org/10.3390/ma19040766","is_oa":true,"landing_page_url":"https://doi.org/10.3390/ma19040766","pdf_url":"https://www.mdpi.com/1996-1944/19/4/766/pdf","source":{"id":"https://openalex.org/S18714766","display_name":"Materials","issn_l":"1996-1944","issn":["1996-1944"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref","pubmed"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.mdpi.com/1996-1944/19/4/766/pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5139150077","display_name":"Zhaopeng Bai","orcid":"https://orcid.org/0009-0008-8086-842X","observed_orcids":["https://orcid.org/0009-0008-8086-842X"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhaopeng Bai","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5143805539","display_name":"Jinsong Liang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinsong Liang","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061425620","display_name":"Chengxi Ding","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chengxi Ding","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111079847","display_name":"Zimo Zhou","orcid":"https://orcid.org/0009-0004-9290-306X","observed_orcids":["https://orcid.org/0009-0004-9290-306X"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zimo Zhou","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060337072","display_name":"Man Luo","orcid":"https://orcid.org/0000-0001-8053-0228","observed_orcids":["https://orcid.org/0000-0001-8053-0228"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Man Luo","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101799883","display_name":"Lin Gu","orcid":"https://orcid.org/0000-0002-9922-4981","observed_orcids":["https://orcid.org/0000-0002-9922-4981"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lin Gu","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002067279","display_name":"Hong-Ping Ma","orcid":"https://orcid.org/0000-0003-4175-5437","observed_orcids":["https://orcid.org/0000-0003-4175-5437"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hong-Ping Ma","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China","Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":"https://orcid.org/0000-0003-4175-5437","affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5121670232","display_name":"Qing-Chun Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Qing-Chun Zhang","raw_affiliation_strings":["Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China","Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China","institution_ids":["https://openalex.org/I24943067"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5002067279","https://openalex.org/A5121670232"],"corresponding_institution_ids":["https://openalex.org/I24943067"],"apc_list":{"value":2600,"currency":"CHF","value_usd":3137},"apc_paid":{"value":2600,"currency":"CHF","value_usd":3137},"fwci":3.3845,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.90618889,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"19","issue":"4","first_page":"766","last_page":"766"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00839999970048666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/4h-sic-mosfet","display_name":"4H-SiC MOSFET","score":0.9929999709129333},{"id":"https://openalex.org/keywords/sio2-sic-interface","display_name":"SiO2/SiC interface","score":0.8930000066757202},{"id":"https://openalex.org/keywords/surface-preparation","display_name":"surface preparation","score":0.9570000171661377},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.7940000295639038},{"id":"https://openalex.org/keywords/high-k-gate-dielectrics","display_name":"high-k gate dielectrics","score":0.9110000133514404},{"id":"https://openalex.org/keywords/alumina","display_name":"alumina","score":0.9810000061988831},{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.9990000128746033},{"id":"https://openalex.org/keywords/zirconia","display_name":"zirconia","score":1.0},{"id":"https://openalex.org/keywords/equivalent-oxide-thickness","display_name":"equivalent oxide thickness","score":0.9660000205039978},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.8140000104904175},{"id":"https://openalex.org/keywords/thermal-stability","display_name":"thermal stability","score":0.9520000219345093},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.8059999942779541},{"id":"https://openalex.org/keywords/power-mosfet-reliability","display_name":"power MOSFET reliability","score":0.7369999885559082}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8314999938011169},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.779699981212616},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7046999931335449},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.7038000226020813},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6675000190734863},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.536300003528595},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.508899986743927},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.499099999666214},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44859999418258667},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.4375999867916107},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3833000063896179},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.38119998574256897},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38109999895095825},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.37770000100135803},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.36390000581741333},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.3580999970436096},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3391000032424927},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.3151000142097473},{"id":"https://openalex.org/C2780081452","wikidata":"https://www.wikidata.org/wiki/Q5297293","display_name":"Dopant Activation","level":4,"score":0.2973000109195709},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.29679998755455017},{"id":"https://openalex.org/C52780932","wikidata":"https://www.wikidata.org/wiki/Q994752","display_name":"Equivalent oxide thickness","level":5,"score":0.290800005197525},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28380000591278076},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27869999408721924},{"id":"https://openalex.org/C59061564","wikidata":"https://www.wikidata.org/wiki/Q7783071","display_name":"Thermal stability","level":2,"score":0.272599995136261},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.266400009393692},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.2500999867916107}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.3390/ma19040766","doi":"https://doi.org/10.3390/ma19040766","is_oa":true,"landing_page_url":"https://doi.org/10.3390/ma19040766","pdf_url":"https://www.mdpi.com/1996-1944/19/4/766/pdf","source":{"id":"https://openalex.org/S18714766","display_name":"Materials","issn_l":"1996-1944","issn":["1996-1944"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials","raw_type":"journal-article"},{"id":"pmid:41753485","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/41753485","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials (Basel, Switzerland)","raw_type":"Journal Article"},{"id":"pmh:oai:pubmedcentral.nih.gov:12941896","doi":null,"is_oa":true,"landing_page_url":"https://pmc.ncbi.nlm.nih.gov/articles/PMC12941896/","pdf_url":null,"source":{"id":"https://openalex.org/S2764455111","display_name":"PubMed Central","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Materials (Basel)","raw_type":"Text"}],"best_oa_location":{"id":"doi:10.3390/ma19040766","doi":"https://doi.org/10.3390/ma19040766","is_oa":true,"landing_page_url":"https://doi.org/10.3390/ma19040766","pdf_url":"https://www.mdpi.com/1996-1944/19/4/766/pdf","source":{"id":"https://openalex.org/S18714766","display_name":"Materials","issn_l":"1996-1944","issn":["1996-1944"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials","raw_type":"journal-article"},"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1891336835","display_name":null,"funder_award_id":"2023YFB4606300","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G249392647","display_name":null,"funder_award_id":"20501110700","funder_id":"https://openalex.org/F4320336652","funder_display_name":"Science and Technology Innovation Plan Of Shanghai Science and Technology Commission"},{"id":"https://openalex.org/G2769300870","display_name":null,"funder_award_id":"2023YFB4606300","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G3842340600","display_name":null,"funder_award_id":"62474049","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4094597944","display_name":null,"funder_award_id":"21DZ1100800","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G566792104","display_name":null,"funder_award_id":"20501110700","funder_id":"https://openalex.org/F4320321885","funder_display_name":"Science and Technology Commission of Shanghai Municipality"},{"id":"https://openalex.org/G6168856086","display_name":null,"funder_award_id":"20501110700","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6752143353","display_name":null,"funder_award_id":"21DZ1100800","funder_id":"https://openalex.org/F4320336652","funder_display_name":"Science and Technology Innovation Plan Of Shanghai Science and Technology Commission"},{"id":"https://openalex.org/G6760767136","display_name":null,"funder_award_id":"23ZR1405300","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G838095216","display_name":null,"funder_award_id":"20501110702","funder_id":"https://openalex.org/F4320336652","funder_display_name":"Science and Technology Innovation Plan Of Shanghai Science and Technology Commission"},{"id":"https://openalex.org/G8987701284","display_name":null,"funder_award_id":"23ZR1405300","funder_id":"https://openalex.org/F4320336652","funder_display_name":"Science and Technology Innovation Plan Of Shanghai Science and Technology Commission"},{"id":"https://openalex.org/G914112039","display_name":null,"funder_award_id":"20501110702","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321885","display_name":"Science and Technology Commission of Shanghai Municipality","ror":"https://ror.org/03kt66j61"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null},{"id":"https://openalex.org/F4320336652","display_name":"Science and Technology Innovation Plan Of Shanghai Science and Technology Commission","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W7129094100.pdf","grobid_xml":"https://content.openalex.org/works/W7129094100.grobid-xml"},"referenced_works_count":165,"referenced_works":["https://openalex.org/W133825022","https://openalex.org/W1480975738","https://openalex.org/W1760057940","https://openalex.org/W1964880994","https://openalex.org/W1966075462","https://openalex.org/W1967660791","https://openalex.org/W1973263430","https://openalex.org/W1974500658","https://openalex.org/W1978446612","https://openalex.org/W1978643792","https://openalex.org/W1979893714","https://openalex.org/W1980693936","https://openalex.org/W1988649974","https://openalex.org/W1991596444","https://openalex.org/W1993436902","https://openalex.org/W1998049891","https://openalex.org/W2002603049","https://openalex.org/W2003645630","https://openalex.org/W2005137664","https://openalex.org/W2005208659","https://openalex.org/W2007242682","https://openalex.org/W2008389897","https://openalex.org/W2011608957","https://openalex.org/W2014070153","https://openalex.org/W2014514886","https://openalex.org/W2014845261","https://openalex.org/W2015114638","https://openalex.org/W2016148517","https://openalex.org/W2016944733","https://openalex.org/W2020595161","https://openalex.org/W2027018973","https://openalex.org/W2032767067","https://openalex.org/W2036233309","https://openalex.org/W2039231133","https://openalex.org/W2041059219","https://openalex.org/W2045522392","https://openalex.org/W2052300693","https://openalex.org/W2052812504","https://openalex.org/W2053674573","https://openalex.org/W2056717510","https://openalex.org/W2056905904","https://openalex.org/W2058477018","https://openalex.org/W2058564794","https://openalex.org/W2064335709","https://openalex.org/W2067144128","https://openalex.org/W2068815791","https://openalex.org/W2071086286","https://openalex.org/W2072008851","https://openalex.org/W2072216948","https://openalex.org/W2073867530","https://openalex.org/W2077714826","https://openalex.org/W2077770884","https://openalex.org/W2082892031","https://openalex.org/W2083872152","https://openalex.org/W2092874501","https://openalex.org/W2093914900","https://openalex.org/W2095061009","https://openalex.org/W2108830266","https://openalex.org/W2113990904","https://openalex.org/W2121387826","https://openalex.org/W2149697246","https://openalex.org/W2161252505","https://openalex.org/W2165614715","https://openalex.org/W2171209056","https://openalex.org/W2244506637","https://openalex.org/W2248964766","https://openalex.org/W2313138297","https://openalex.org/W2318451376","https://openalex.org/W2395368379","https://openalex.org/W2399137943","https://openalex.org/W2404250310","https://openalex.org/W2406154944","https://openalex.org/W2473045264","https://openalex.org/W2496315018","https://openalex.org/W2528132948","https://openalex.org/W2546493627","https://openalex.org/W2582746718","https://openalex.org/W2587340837","https://openalex.org/W2599178410","https://openalex.org/W2612751853","https://openalex.org/W2613691646","https://openalex.org/W2739372216","https://openalex.org/W2750090712","https://openalex.org/W2762162418","https://openalex.org/W2763389250","https://openalex.org/W2765213782","https://openalex.org/W2766796456","https://openalex.org/W2781083056","https://openalex.org/W2782922314","https://openalex.org/W2786315243","https://openalex.org/W2789058434","https://openalex.org/W2789619847","https://openalex.org/W2792843904","https://openalex.org/W2799780389","https://openalex.org/W2806137666","https://openalex.org/W2891789337","https://openalex.org/W2900385788","https://openalex.org/W2903842582","https://openalex.org/W2904102508","https://openalex.org/W2909049900","https://openalex.org/W2921420867","https://openalex.org/W2949728079","https://openalex.org/W2975908399","https://openalex.org/W2996125036","https://openalex.org/W3006564841","https://openalex.org/W3016630708","https://openalex.org/W3033861524","https://openalex.org/W3049768510","https://openalex.org/W3090475176","https://openalex.org/W3092706803","https://openalex.org/W3094834944","https://openalex.org/W3096692157","https://openalex.org/W3123680121","https://openalex.org/W3131637326","https://openalex.org/W3131751753","https://openalex.org/W3133253311","https://openalex.org/W3136133937","https://openalex.org/W3165403367","https://openalex.org/W3213812321","https://openalex.org/W4205132809","https://openalex.org/W4213325984","https://openalex.org/W4281692923","https://openalex.org/W4281738632","https://openalex.org/W4297031560","https://openalex.org/W4310449842","https://openalex.org/W4312085240","https://openalex.org/W4313291088","https://openalex.org/W4327661948","https://openalex.org/W4361303498","https://openalex.org/W4376649234","https://openalex.org/W4377042791","https://openalex.org/W4378905554","https://openalex.org/W4385706812","https://openalex.org/W4388673125","https://openalex.org/W4389317872","https://openalex.org/W4390821030","https://openalex.org/W4395048436","https://openalex.org/W4396980779","https://openalex.org/W4399163967","https://openalex.org/W4399441989","https://openalex.org/W4399796450","https://openalex.org/W4401766811","https://openalex.org/W4401816846","https://openalex.org/W4405176730","https://openalex.org/W4406236449","https://openalex.org/W4406822905","https://openalex.org/W4406853474","https://openalex.org/W4407736887","https://openalex.org/W4407905120","https://openalex.org/W4408156335","https://openalex.org/W4408167817","https://openalex.org/W4409313507","https://openalex.org/W4409329795","https://openalex.org/W4409883136","https://openalex.org/W4410020095","https://openalex.org/W4411142942","https://openalex.org/W4411341550","https://openalex.org/W4412203971","https://openalex.org/W4413288916","https://openalex.org/W4414029433","https://openalex.org/W4414145371","https://openalex.org/W4414271630","https://openalex.org/W4414609006","https://openalex.org/W4415680154","https://openalex.org/W4417290874"],"related_works":[],"abstract_inverted_index":{"The":[0,77,125],"performance":[1],"and":[2,21,50,70,90,95,114,141,151,181,197],"reliability":[3,199],"of":[4,17,24,34,64,80,106,127],"4H-SiC":[5,42,202],"Metal-Oxide-Semiconductor":[6],"Field-Effect":[7],"Transistors":[8],"(MOSFETs)":[9],"are":[10,74,93,101,145,160,167],"largely":[11],"determined":[12],"by":[13],"the":[14,22,25,62,96,104],"material":[15],"properties":[16],"gate":[18,38,48,53,67,108,136,158,183],"dielectric":[19,39,116,184],"films":[20],"quality":[23],"dielectric/SiC":[26],"interface.":[27],"This":[28],"paper":[29],"provides":[30],"a":[31],"systematic":[32],"review":[33],"recent":[35],"progress":[36],"in":[37,98,118,130,170,200],"engineering":[40,173],"for":[41,56,191],"MOSFETs,":[43],"with":[44,155],"emphasis":[45],"on":[46,83,175],"SiO2-based":[47],"dielectrics":[49,159],"high-dielectric-constant":[51],"(high-k)":[52],"dielectrics.":[54],"First,":[55],"conventional":[57],"thermally":[58],"grown":[59],"SiO2/SiC":[60],"systems,":[61],"effects":[63],"interface":[65,85,87,149,172],"nitridation,":[66],"oxide":[68,133],"doping,":[69],"surface":[71],"pretreatment":[72],"techniques":[73],"comprehensively":[75],"discussed.":[76],"influence":[78],"mechanisms":[79],"these":[81,128],"processes":[82],"carbon-related":[84],"defects,":[86],"state":[88],"density":[89],"field-effect":[91],"mobility":[92],"analyzed,":[94],"advances":[97],"related":[99],"research":[100,165],"summarized.":[102],"Second,":[103],"application":[105],"high-k":[107,157],"dielectrics,":[109],"including":[110,169],"Al2O3,":[111],"HfO2,":[112],"ZrO2,":[113],"stacked":[115],"structures,":[117],"SiC":[119],"MOS":[120],"devices":[121],"is":[122],"systematically":[123],"reviewed.":[124],"advantages":[126],"materials":[129],"reducing":[131],"equivalent":[132],"thickness,":[134],"increasing":[135],"capacitance,":[137],"suppressing":[138],"leakage":[139],"current,":[140],"improving":[142],"thermal":[143],"stability":[144],"highlighted.":[146],"In":[147],"addition,":[148],"defects":[150],"electrical":[152],"characteristics":[153],"associated":[154],"different":[156],"comparatively":[161],"evaluated.":[162],"Finally,":[163],"future":[164],"directions":[166],"discussed,":[168],"situ":[171],"based":[174],"atomic":[176],"layer":[177],"deposition,":[178],"dopant":[179],"modulation,":[180],"heterogeneous":[182],"structures.":[185],"These":[186],"approaches":[187],"show":[188],"strong":[189],"potential":[190],"achieving":[192],"high":[193,198],"mobility,":[194],"low":[195],"loss,":[196],"advanced":[201],"power":[203],"MOSFETs.":[204]},"counts_by_year":[{"year":2026,"cited_by_count":2}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2026-02-17T00:00:00"}