{"id":"https://openalex.org/W7128917685","doi":"https://doi.org/10.1016/j.solmat.2026.114236","title":"Unraveling the interfacial electronic structure and carrier dynamics engineered by the MoSe2 layer in Sb2Se3 solar cells: A numerical physics perspective","display_name":"Unraveling the interfacial electronic structure and carrier dynamics engineered by the MoSe2 layer in Sb2Se3 solar cells: A numerical physics perspective","publication_year":2026,"publication_date":"2026-02-14","ids":{"openalex":"https://openalex.org/W7128917685","doi":"https://doi.org/10.1016/j.solmat.2026.114236"},"language":"en","primary_location":{"id":"doi:10.1016/j.solmat.2026.114236","doi":"https://doi.org/10.1016/j.solmat.2026.114236","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.solmat.2026.114236","pdf_url":null,"source":{"id":"https://openalex.org/S166040772","display_name":"Solar Energy Materials and Solar Cells","issn_l":"0927-0248","issn":["0927-0248","1879-3398"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-2","norway-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solar Energy Materials and Solar Cells","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://doi.org/10.1016/j.solmat.2026.114236","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5126024197","display_name":"Qi Hu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Hu","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100569804","display_name":"Xiaofang Zhao","orcid":"https://orcid.org/0009-0002-5729-5762","observed_orcids":["https://orcid.org/0009-0002-5729-5762"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":null,"type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiaofang Zhao","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"raw_orcid":"https://orcid.org/0009-0002-5729-5762","affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126023896","display_name":"Hongbo Liao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongbo Liao","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126040260","display_name":"Jiacheng Yao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiacheng Yao","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126034577","display_name":"Zeen Zhuang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zeen Zhuang","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126029082","display_name":"Siyu Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Siyu Chen","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126026351","display_name":"Huazhu Liu","orcid":"https://orcid.org/0009-0002-2329-1077","observed_orcids":["https://orcid.org/0009-0002-2329-1077"]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huazhu Liu","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":"https://orcid.org/0009-0002-2329-1077","affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5126031193","display_name":"Xueling Zhou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xueling Zhou","raw_affiliation_strings":["College of Elite Engineers, Dongguan University of Technology, Dongguan, 523000, Guangdong, PR China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Elite Engineers, Dongguan University of Technology, Dongguan, 523000, Guangdong, PR China","institution_ids":["https://openalex.org/I2799850029"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044103500","display_name":"Junhui Lin","orcid":"https://orcid.org/0000-0003-3509-5102","observed_orcids":["https://orcid.org/0000-0003-3509-5102"]},"institutions":[{"id":"https://openalex.org/I2799850029","display_name":"Dongguan University of Technology","ror":"https://ror.org/01m8p7q42","country_code":"CN","type":"education","lineage":["https://openalex.org/I2799850029"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Junhui Lin","raw_affiliation_strings":["School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China"],"raw_orcid":"https://orcid.org/0000-0003-3509-5102","affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Dongguan University of Technology, Dongguan 523000, Guangdong, China","institution_ids":["https://openalex.org/I2799850029"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5044103500","https://openalex.org/A5100569804"],"corresponding_institution_ids":["https://openalex.org/I150229711","https://openalex.org/I2799850029","https://openalex.org/I4391767659"],"apc_list":{"value":4340,"currency":"USD","value_usd":4340},"apc_paid":{"value":4340,"currency":"USD","value_usd":4340},"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07048611,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"300","issue":null,"first_page":"114236","last_page":"114236"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sb2se3-solar-cells","display_name":"Sb2Se3 solar cells","score":0.9779999852180481},{"id":"https://openalex.org/keywords/interfacial-electronic-structure","display_name":"interface electronic structure","score":0.7990000247955322},{"id":"https://openalex.org/keywords/charge-carrier-dynamics","display_name":"carrier dynamics","score":0.9319999814033508},{"id":"https://openalex.org/keywords/interface-dipole","display_name":"interface dipole","score":0.8489999771118164},{"id":"https://openalex.org/keywords/band-bending","display_name":"band bending","score":0.8830000162124634},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.8650000095367432},{"id":"https://openalex.org/keywords/thermionic-field-emission","display_name":"thermionic field emission","score":0.8740000128746033},{"id":"https://openalex.org/keywords/defect-passivation","display_name":"defect passivation","score":0.9010000228881836},{"id":"https://openalex.org/keywords/urbach-energy","display_name":"Urbach energy","score":0.9760000109672546},{"id":"https://openalex.org/keywords/shockley-read-hall-recombination","display_name":"Shockley-Read-Hall recombination","score":0.9990000128746033},{"id":"https://openalex.org/keywords/numerical-simulation","display_name":"numerical simulation","score":0.5870000123977661}],"concepts":[{"id":"https://openalex.org/C2778177714","wikidata":"https://www.wikidata.org/wiki/Q898920","display_name":"Chalcogenide","level":2,"score":0.6312000155448914},{"id":"https://openalex.org/C542589376","wikidata":"https://www.wikidata.org/wiki/Q192127","display_name":"Photovoltaics","level":3,"score":0.5674999952316284},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.554099977016449},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5338000059127808},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5164999961853027},{"id":"https://openalex.org/C19181183","wikidata":"https://www.wikidata.org/wiki/Q4854235","display_name":"Band bending","level":2,"score":0.5109000205993652},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.4745999872684479},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.41679999232292175},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.41609999537467957},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4034000039100647},{"id":"https://openalex.org/C125469278","wikidata":"https://www.wikidata.org/wiki/Q806380","display_name":"Electronic band structure","level":2,"score":0.38580000400543213},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.37770000100135803},{"id":"https://openalex.org/C173523689","wikidata":"https://www.wikidata.org/wiki/Q215589","display_name":"Dipole","level":2,"score":0.3707999885082245},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.36489999294281006},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3587999939918518},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.35839998722076416},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.3346000015735626},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3285999894142151},{"id":"https://openalex.org/C2779833192","wikidata":"https://www.wikidata.org/wiki/Q17015866","display_name":"Barrier layer","level":3,"score":0.3278000056743622},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.3271999955177307},{"id":"https://openalex.org/C53559285","wikidata":"https://www.wikidata.org/wiki/Q5567362","display_name":"Glazing","level":2,"score":0.3208000063896179},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.3181000053882599},{"id":"https://openalex.org/C2989031253","wikidata":"https://www.wikidata.org/wiki/Q925667","display_name":"Numerical modeling","level":2,"score":0.302700012922287},{"id":"https://openalex.org/C2780824857","wikidata":"https://www.wikidata.org/wiki/Q58803","display_name":"Solar cell","level":2,"score":0.29420000314712524},{"id":"https://openalex.org/C2776921476","wikidata":"https://www.wikidata.org/wiki/Q5283","display_name":"Diamond","level":2,"score":0.28529998660087585},{"id":"https://openalex.org/C98446981","wikidata":"https://www.wikidata.org/wiki/Q288224","display_name":"Depletion region","level":3,"score":0.2793000042438507},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.27619999647140503},{"id":"https://openalex.org/C98009336","wikidata":"https://www.wikidata.org/wiki/Q1758077","display_name":"Schottky effect","level":4,"score":0.26669999957084656},{"id":"https://openalex.org/C113740112","wikidata":"https://www.wikidata.org/wiki/Q5904738","display_name":"Slab","level":2,"score":0.25279998779296875},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2524000108242035},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.2500999867916107}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.solmat.2026.114236","doi":"https://doi.org/10.1016/j.solmat.2026.114236","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.solmat.2026.114236","pdf_url":null,"source":{"id":"https://openalex.org/S166040772","display_name":"Solar Energy Materials and Solar Cells","issn_l":"0927-0248","issn":["0927-0248","1879-3398"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-2","norway-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solar Energy Materials and Solar Cells","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1016/j.solmat.2026.114236","doi":"https://doi.org/10.1016/j.solmat.2026.114236","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.solmat.2026.114236","pdf_url":null,"source":{"id":"https://openalex.org/S166040772","display_name":"Solar Energy Materials and Solar Cells","issn_l":"0927-0248","issn":["0927-0248","1879-3398"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-2","norway-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solar Energy Materials and Solar Cells","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.878000020980835,"display_name":"Affordable and clean energy"}],"sustainable_development_goals_aurora":[{"id":"https://metadata.un.org/sdg/7","score":0.7875876426696777,"display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[{"id":"https://openalex.org/G4747437496","display_name":null,"funder_award_id":"KFJJ202406","funder_id":"https://openalex.org/F4320327035","funder_display_name":"National Key Laboratory of Electronic Thin Films and Integrated Devices"}],"funders":[{"id":"https://openalex.org/F4320327035","display_name":"National Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W1586371271","https://openalex.org/W2139542700","https://openalex.org/W2560383135","https://openalex.org/W2765770387","https://openalex.org/W2887437099","https://openalex.org/W2904652536","https://openalex.org/W2908971674","https://openalex.org/W2960958251","https://openalex.org/W2963983378","https://openalex.org/W2971442865","https://openalex.org/W2981529917","https://openalex.org/W2996479167","https://openalex.org/W3111779761","https://openalex.org/W3162171348","https://openalex.org/W3196609949","https://openalex.org/W3198207009","https://openalex.org/W3200025017","https://openalex.org/W3211896467","https://openalex.org/W4200401190","https://openalex.org/W4225852921","https://openalex.org/W4282044216","https://openalex.org/W4360939770","https://openalex.org/W4387353203","https://openalex.org/W4400199909","https://openalex.org/W4402240525","https://openalex.org/W4404859761","https://openalex.org/W4406300794","https://openalex.org/W4407731241"],"related_works":[],"abstract_inverted_index":{"The":[0,40],"performance":[1],"of":[2],"Sb":[3],"2":[4,15,109],"Se":[5,110],"3":[6,111],"solar":[7],"cells":[8],"is":[9],"profoundly":[10],"influenced":[11],"by":[12,58],"the":[13,20,54,66,80,94,97,106],"MoSe":[14],"interfacial":[16,46,136],"layer":[17],"(IL),":[18],"yet":[19],"underlying":[21],"physics":[22,133],"governing":[23],"its":[24,34],"function":[25],"require":[26],"clarification.":[27],"Through":[28],"detailed":[29],"numerical":[30],"simulation,":[31],"we":[32],"decipher":[33],"operation":[35],"through":[36],"three":[37],"core":[38],"mechanisms.":[39],"IL":[41],"serves":[42],"first":[43],"as":[44,65,73],"an":[45],"dipole":[47],"modulator,":[48],"reconstituting":[49],"band":[50],"bending":[51],"to":[52,86,89],"lower":[53],"hole":[55],"Schottky":[56],"barrier":[57,119],"38.4":[59],"meV":[60,85,88],"and":[61,123,131],"establishing":[62],"thermionic-field":[63],"emission":[64],"dominant":[67],"transport":[68],"pathway.":[69],"It":[70],"secondly":[71],"acts":[72],"a":[74,129],"bulk":[75,101],"defect":[76,121],"passivator,":[77],"drastically":[78],"reducing":[79],"Urbach":[81],"energy":[82],"from":[83],"39.2":[84],"22.3":[87],"suppress":[90],"Shockley-Read-Hall":[91],"recombination":[92],"within":[93],"absorber.":[95],"Thirdly,":[96],"resulting":[98],"improvement":[99],"in":[100,138],"material":[102],"quality":[103],"indirectly":[104],"enhances":[105],"front":[107],"CdS/Sb":[108],"heterojunction.":[112],"By":[113],"linking":[114],"these":[115],"interconnected":[116],"roles,":[117],"namely":[118],"engineering,":[120],"suppression,":[122],"junction":[124],"improvement,":[125],"this":[126],"study":[127],"provides":[128],"foundational":[130],"generalizable":[132],"framework":[134],"for":[135],"design":[137],"chalcogenide":[139],"photovoltaics.":[140]},"counts_by_year":[],"updated_date":"2026-09-21T07:43:02.447757","created_date":"2026-02-15T00:00:00"}