{"id":"https://openalex.org/W7128401580","doi":"https://doi.org/10.60893/figshare.apl.c.8246560","title":"In-situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma","display_name":"In-situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma","publication_year":2026,"publication_date":"2026-01-01","ids":{"openalex":"https://openalex.org/W7128401580","doi":"https://doi.org/10.60893/figshare.apl.c.8246560"},"language":"en","primary_location":{"id":"doi:10.60893/figshare.apl.c.8246560","doi":"https://doi.org/10.60893/figshare.apl.c.8246560","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8246560","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},"volume":null,"type":"other","is_traditional":false,"indexed_in":["datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.60893/figshare.apl.c.8246560","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5125416516","display_name":"Kazuaki Kurihara","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kurihara, Kazuaki","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0009-0002-7023-8009","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064319673","display_name":"Daiki Iino","orcid":"https://orcid.org/0009-0005-6993-2740","observed_orcids":["https://orcid.org/0009-0005-6993-2740"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Iino, Daiki","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0009-0005-6993-2740","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5125406710","display_name":"Ryo Saito","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Saito, Ryo","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0009-0001-9443-2204","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049767012","display_name":"Hiroyuki Fukumizu","orcid":"https://orcid.org/0009-0006-9077-8538","observed_orcids":["https://orcid.org/0009-0006-9077-8538"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Fukumizu, Hiroyuki","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0009-0006-9077-8538","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5125389434","display_name":"junji kataoka","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"kataoka, junji","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0009-0008-1976-6897","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5125406616","display_name":"Yuma Kato","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kato, Yuma","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0009-0006-3545-408X","affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5125384827","display_name":"Tetsuya Sato","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sato, Tetsuya","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0002-3122-9882","affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9818999767303467,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9818999767303467,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.006500000134110451,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.002400000113993883,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cryogenic-etching","display_name":"cryogenic etching","score":0.8650000095367432},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.6359999775886536},{"id":"https://openalex.org/keywords/substrate-temperature","display_name":"substrate temperature","score":0.4970000088214874},{"id":"https://openalex.org/keywords/water-co-adsorption","display_name":"water co-adsorption","score":0.7870000004768372},{"id":"https://openalex.org/keywords/in-situ-analysis","display_name":"in situ analysis","score":0.6809999942779541}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.8282999992370605},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7236999869346619},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.6104000210762024},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5576000213623047},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.5058000087738037},{"id":"https://openalex.org/C91602232","wikidata":"https://www.wikidata.org/wiki/Q756115","display_name":"Volatility (finance)","level":2,"score":0.423799991607666},{"id":"https://openalex.org/C2779261148","wikidata":"https://www.wikidata.org/wiki/Q5852","display_name":"Blanket","level":2,"score":0.4178999960422516},{"id":"https://openalex.org/C124634506","wikidata":"https://www.wikidata.org/wiki/Q486936","display_name":"Deep reactive-ion etching","level":5,"score":0.3912999927997589},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3562999963760376},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.33250001072883606},{"id":"https://openalex.org/C81626474","wikidata":"https://www.wikidata.org/wiki/Q2518122","display_name":"Etch pit density","level":4,"score":0.33180001378059387},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.32679998874664307},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2973000109195709},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2752000093460083},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.25769999623298645},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2533999979496002},{"id":"https://openalex.org/C82558694","wikidata":"https://www.wikidata.org/wiki/Q1545619","display_name":"Aspect ratio (aeronautics)","level":2,"score":0.251800000667572},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.2515999972820282},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.2515999972820282}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.60893/figshare.apl.c.8246560","doi":"https://doi.org/10.60893/figshare.apl.c.8246560","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8246560","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},{"id":"doi:10.60893/figshare.apl.c.8246560.v1","doi":"https://doi.org/10.60893/figshare.apl.c.8246560.v1","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8246560.v1","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"}],"best_oa_location":{"id":"doi:10.60893/figshare.apl.c.8246560","doi":"https://doi.org/10.60893/figshare.apl.c.8246560","is_oa":true,"landing_page_url":"https://doi.org/10.60893/figshare.apl.c.8246560","pdf_url":null,"source":{"id":"https://openalex.org/S7407050528","display_name":"AIP Publishing","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Collection"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W7128070007","https://openalex.org/W4414697217","https://openalex.org/W7110917471","https://openalex.org/W7204232908","https://openalex.org/W7154156168","https://openalex.org/W4319303861","https://openalex.org/W4409351358","https://openalex.org/W7154701723","https://openalex.org/W2605139763","https://openalex.org/W4404462172"],"abstract_inverted_index":{"High":[0],"aspect":[1],"ratio":[2],"hole":[3],"etching":[4,8,15,32,52,99,177],"processes":[5,178],"require":[6],"high-speed":[7],"of":[9,21,54,115,123,138,143,165],"SiO2":[10,56,127],"and":[11,34,64,93,117],"Si3N4":[12],"films.":[13],"Cryogenic":[14],"significantly":[16],"increases":[17,120],"the":[18,27,31,37,51,66,75,97,107,113,121,126,136,141,146,155,162,166],"etch":[19,76,108,147,156],"rates":[20],"these":[22],"two":[23],"films":[24],"by":[25],"lowering":[26],"substrate":[28],"temperature.":[29],"However,":[30],"behavior":[33,53],"mechanisms":[35,67],"in":[36,101,106],"temperature":[38],"range":[39],"below":[40,151],"\u221270":[41],"{degree":[42,62,80,91,134,153],"sign}C":[43,81],"remain":[44],"unclear.":[45],"In":[46],"this":[47],"work,":[48],"we":[49],"investigate":[50],"blanket":[55],"films,":[57],"from":[58],"25":[59,90],"to":[60,112,161],"\u2212200":[61],"sign}C,":[63,92,135,154],"examine":[65],"through":[68],"in-situ":[69],"analyses.":[70],"Our":[71],"results":[72],"show":[73],"that":[74,88],"rate":[77,109,157],"at":[78,89],"\u2212100":[79,133],"is":[82,94,110],"approximately":[83],"3.2":[84],"times":[85],"higher":[86],"than":[87,132],"associated":[95],"with":[96],"highest":[98],"efficiency":[100],"our":[102],"experiments.":[103],"This":[104],"enhancement":[105],"attributed":[111],"co-adsorption":[114,142],"H2O":[116,139],"HF,":[118,144],"which":[119],"number":[122],"etchants":[124],"on":[125],"surface.":[128],"At":[129,149],"temperatures":[130,150],"lower":[131],"solidification":[137],"reduces":[140],"decreasing":[145],"rate.":[148],"\u2212150":[152],"declines":[158],"further,":[159],"owing":[160],"reduced":[163],"volatility":[164],"reaction":[167],"product":[168],"SiF4.":[169],"These":[170],"findings":[171],"provide":[172],"valuable":[173],"insights":[174],"for":[175],"optimizing":[176],"under":[179],"cryogenic":[180],"conditions.":[181]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2026-02-10T00:00:00"}