{"id":"https://openalex.org/W7123363137","doi":"https://doi.org/10.21203/rs.3.rs-8443511/v1","title":"Room-temperature ferroelectricity in monolayer graphene on Fe2O3 film","display_name":"Room-temperature ferroelectricity in monolayer graphene on Fe2O3 film","publication_year":2026,"publication_date":"2026-01-13","ids":{"openalex":"https://openalex.org/W7123363137","doi":"https://doi.org/10.21203/rs.3.rs-8443511/v1"},"language":"en","primary_location":{"id":"doi:10.21203/rs.3.rs-8443511/v1","doi":"https://doi.org/10.21203/rs.3.rs-8443511/v1","is_oa":true,"landing_page_url":"https://doi.org/10.21203/rs.3.rs-8443511/v1","pdf_url":null,"source":{"id":"https://openalex.org/S4306525896","display_name":"Research Square","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Research Square","raw_type":"posted-content"},"volume":null,"type":"preprint","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.21203/rs.3.rs-8443511/v1","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5122907049","display_name":"Sungjae Cho","orcid":"https://orcid.org/0000-0003-2547-095X","observed_orcids":["https://orcid.org/0000-0003-2547-095X"]},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungjae Cho","raw_affiliation_strings":["Korea Advanced Institute of Science and Technology"],"raw_orcid":"https://orcid.org/0000-0003-2547-095X","affiliations":[{"raw_affiliation_string":"Korea Advanced Institute of Science and Technology","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047486768","display_name":"Kyunghwan Sung","orcid":"https://orcid.org/0009-0009-0296-4595","observed_orcids":["https://orcid.org/0009-0009-0296-4595"]},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyunghwan Sung","raw_affiliation_strings":["Korea Advanced Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Institute of Science and Technology","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5122883395","display_name":"Qi Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Qi Zhang","raw_affiliation_strings":["Sungkyunkwan University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sungkyunkwan University","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5122880532","display_name":"Yong-Jun Kwon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong-Jun Kwon","raw_affiliation_strings":["KAIST"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KAIST","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110710470","display_name":"Hyobin Nam","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210140519","display_name":"Korean Association Of Science and Technology Studies","ror":"https://ror.org/04qh86j58","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210140519"]},{"id":"https://openalex.org/I58716616","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883","country_code":"KR","type":"facility","lineage":["https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I58716616"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyobin Nam","raw_affiliation_strings":["Korea Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Institute of Science and Technology","institution_ids":["https://openalex.org/I4210140519","https://openalex.org/I58716616"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045096283","display_name":"Kenji Watanabe","orcid":"https://orcid.org/0000-0003-3701-8119","observed_orcids":["https://orcid.org/0000-0003-3701-8119"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenji Watanabe","raw_affiliation_strings":["National Institute for Materials Science"],"raw_orcid":"https://orcid.org/0000-0003-3701-8119","affiliations":[{"raw_affiliation_string":"National Institute for Materials Science","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041573207","display_name":"Takashi Taniguchi","orcid":"https://orcid.org/0000-0002-1467-3105","observed_orcids":["https://orcid.org/0000-0002-1467-3105"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]},{"id":"https://openalex.org/I4405286814","display_name":"Research Center for Materials Nanoarchitectonics","ror":"https://ror.org/03614j208","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836","https://openalex.org/I4405286814"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Taniguchi","raw_affiliation_strings":["Research Center for Materials Nanoarchitectonics, National Institute for Materials Science"],"raw_orcid":"https://orcid.org/0000-0002-1467-3105","affiliations":[{"raw_affiliation_string":"Research Center for Materials Nanoarchitectonics, National Institute for Materials Science","institution_ids":["https://openalex.org/I205401836","https://openalex.org/I4405286814"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5122894184","display_name":"Sung-Jin Chang","orcid":"https://orcid.org/0000-0002-6558-839X","observed_orcids":["https://orcid.org/0000-0002-6558-839X"]},"institutions":[{"id":"https://openalex.org/I4210164985","display_name":"National NanoFab Center","ror":"https://ror.org/05k1va520","country_code":"KR","type":"facility","lineage":["https://openalex.org/I157485424","https://openalex.org/I4210164985"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Jin Chang","raw_affiliation_strings":["National NanoFab Center"],"raw_orcid":"https://orcid.org/0000-0002-6558-839X","affiliations":[{"raw_affiliation_string":"National NanoFab Center","institution_ids":["https://openalex.org/I4210164985"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032053414","display_name":"Chan\u2010Ho Yang","orcid":"https://orcid.org/0000-0002-3384-4272","observed_orcids":["https://orcid.org/0000-0002-3384-4272"]},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chan-Ho Yang","raw_affiliation_strings":["KAIST"],"raw_orcid":"https://orcid.org/0000-0002-3384-4272","affiliations":[{"raw_affiliation_string":"KAIST","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046060382","display_name":"Sanjo Lee","orcid":"https://orcid.org/0000-0002-6935-9439","observed_orcids":["https://orcid.org/0000-0002-6935-9439"]},"institutions":[{"id":"https://openalex.org/I4210140519","display_name":"Korean Association Of Science and Technology Studies","ror":"https://ror.org/04qh86j58","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210140519"]},{"id":"https://openalex.org/I58716616","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883","country_code":"KR","type":"facility","lineage":["https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I58716616"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung Yong Lee","raw_affiliation_strings":["Korea Institute of Science and Technology"],"raw_orcid":"https://orcid.org/0000-0002-6935-9439","affiliations":[{"raw_affiliation_string":"Korea Institute of Science and Technology","institution_ids":["https://openalex.org/I4210140519","https://openalex.org/I58716616"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014356046","display_name":"Euy Heon Hwang","orcid":"https://orcid.org/0000-0003-3269-8856","observed_orcids":["https://orcid.org/0000-0003-3269-8856"]},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Euy Heon Hwang","raw_affiliation_strings":["Sungkyunkwan University"],"raw_orcid":"https://orcid.org/0000-0003-3269-8856","affiliations":[{"raw_affiliation_string":"Sungkyunkwan University","institution_ids":["https://openalex.org/I848706"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.37790000438690186,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.37790000438690186,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10886","display_name":"Multiferroics and related materials","score":0.2703000009059906,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.23659999668598175,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electronic-ferroelectricity","display_name":"electronic ferroelectricity","score":0.8980000019073486},{"id":"https://openalex.org/keywords/monolayer-graphene","display_name":"monolayer graphene","score":0.9240000247955322},{"id":"https://openalex.org/keywords/alpha-fe2o3-thin-films","display_name":"\u03b1-Fe2O3 thin films","score":0.9319999814033508},{"id":"https://openalex.org/keywords/room-temperature-ferroelectricity","display_name":"room-temperature ferroelectricity","score":0.871999979019165},{"id":"https://openalex.org/keywords/charge-transfer","display_name":"charge transfer","score":0.8149999976158142},{"id":"https://openalex.org/keywords/nonvolatile-switching","display_name":"nonvolatile switching","score":0.6209999918937683},{"id":"https://openalex.org/keywords/ferroelectric-memory","display_name":"ferroelectric memory","score":0.6330000162124634}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.9168000221252441},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7559000253677368},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.6639999747276306},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.635699987411499},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.588699996471405},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4837000072002411},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.4514999985694885},{"id":"https://openalex.org/C2182769","wikidata":"https://www.wikidata.org/wiki/Q62500","display_name":"Ionic bonding","level":3,"score":0.4438000023365021},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44209998846054077},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37439998984336853},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.35749998688697815},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.34279999136924744},{"id":"https://openalex.org/C2780243435","wikidata":"https://www.wikidata.org/wiki/Q410193","display_name":"Boron nitride","level":2,"score":0.289000004529953},{"id":"https://openalex.org/C2781204021","wikidata":"https://www.wikidata.org/wiki/Q6497091","display_name":"Lattice (music)","level":2,"score":0.2678000032901764},{"id":"https://openalex.org/C123266903","wikidata":"https://www.wikidata.org/wiki/Q1432148","display_name":"Multiferroics","level":4,"score":0.26190000772476196}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.21203/rs.3.rs-8443511/v1","doi":"https://doi.org/10.21203/rs.3.rs-8443511/v1","is_oa":true,"landing_page_url":"https://doi.org/10.21203/rs.3.rs-8443511/v1","pdf_url":null,"source":{"id":"https://openalex.org/S4306525896","display_name":"Research Square","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Research Square","raw_type":"posted-content"}],"best_oa_location":{"id":"doi:10.21203/rs.3.rs-8443511/v1","doi":"https://doi.org/10.21203/rs.3.rs-8443511/v1","is_oa":true,"landing_page_url":"https://doi.org/10.21203/rs.3.rs-8443511/v1","pdf_url":null,"source":{"id":"https://openalex.org/S4306525896","display_name":"Research Square","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Research Square","raw_type":"posted-content"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W1982643031","https://openalex.org/W1993717184","https://openalex.org/W2027257346","https://openalex.org/W2081546967","https://openalex.org/W2125284466","https://openalex.org/W2161137499","https://openalex.org/W2465845169","https://openalex.org/W2508408601","https://openalex.org/W2555541385","https://openalex.org/W2624238387","https://openalex.org/W2883933020","https://openalex.org/W2905173712","https://openalex.org/W2905920441","https://openalex.org/W2938046630","https://openalex.org/W2955075762","https://openalex.org/W3087635629","https://openalex.org/W3092934498","https://openalex.org/W3095256020","https://openalex.org/W3108890290","https://openalex.org/W4200037934","https://openalex.org/W4220907438","https://openalex.org/W4225463686","https://openalex.org/W4283217042","https://openalex.org/W4306973572","https://openalex.org/W4311220514","https://openalex.org/W4367176649","https://openalex.org/W4379933137","https://openalex.org/W4384008947","https://openalex.org/W4384819444","https://openalex.org/W4387130387","https://openalex.org/W4390014080","https://openalex.org/W4391090717","https://openalex.org/W4399394788","https://openalex.org/W4405895658","https://openalex.org/W4406715464"],"related_works":["https://openalex.org/W4405895658","https://openalex.org/W4394007464","https://openalex.org/W4406984176","https://openalex.org/W3108890290","https://openalex.org/W6979357578","https://openalex.org/W3132876924","https://openalex.org/W2087186619","https://openalex.org/W4360601288","https://openalex.org/W4379933137","https://openalex.org/W4393284321"],"abstract_inverted_index":{"Abstract":[0],"We":[1],"present":[2],"a":[3,146],"novel":[4],"approach":[5],"to":[6],"electronic":[7,29,77,102,153],"ferroelectricity":[8,24,30,36,57,78],"by":[9,26],"integrating":[10],"monolayer":[11,46],"graphene":[12,49,106],"(MLG)":[13],"with":[14,51,124,131],"non-ferroelectric":[15],"\u03b1-Fe":[16,108],"2":[17,71,109,141],"O":[18,72,110,142],"3":[19,73,111,143],"thin":[20,112],"films.":[21],"Unlike":[22],"conventional":[23],"driven":[25],"ionic":[27],"displacement,":[28],"originates":[31],"from":[32,101],"charge":[33,103],"dynamics.":[34],"Electronic":[35],"has":[37],"recently":[38],"been":[39],"observed":[40,93],"in":[41,58,96],"moir\u00e9":[42,83],"systems,":[43],"such":[44],"as":[45,145],"or":[47],"few-layer":[48],"aligned":[50],"hexagonal":[52],"boron":[53],"nitride":[54],"(hBN).":[55],"However,":[56],"these":[59],"systems":[60],"requires":[61],"precise":[62],"heterostructure":[63],"alignment":[64,84],"and":[65,85,107,148],"low":[66],"temperatures.":[67],"Our":[68],"proposed":[69,98],"MLG/\u03b1-Fe":[70],"devices":[74,99],"show":[75],"robust":[76],"without":[79],"the":[80,97],"need":[81],"for":[82,151],"remain":[86],"stable":[87,149],"even":[88],"at":[89],"room":[90],"temperature.":[91],"The":[92,118],"ferroelectric":[94,154],"behavior":[95],"arises":[100],"transfer":[104],"between":[105],"films,":[113],"rather":[114],"than":[115],"lattice":[116],"distortions.":[117],"polarization":[119],"magnitude":[120],"is":[121],"continuously":[122],"tunable":[123],"gate":[125],"voltage,":[126],"enabling":[127],"multi-level":[128],"non-volatile":[129],"switching":[130],"high":[132],"stability":[133],"over":[134],"repeated":[135],"cycles.":[136],"These":[137],"findings":[138],"provide":[139],"MLG/Fe":[140],"heterostructures":[144],"practical":[147],"platform":[150],"future":[152],"applications.":[155]},"counts_by_year":[],"updated_date":"2026-11-09T13:22:03.289127","created_date":"2026-01-14T00:00:00"}