{"id":"https://openalex.org/W7084286522","doi":null,"title":"Research on Internal Current Sharing of High-power IGBTs","display_name":"Research on Internal Current Sharing of High-power IGBTs","publication_year":2017,"publication_date":"2017-01-01","ids":{"openalex":"https://openalex.org/W7084286522"},"language":"en","primary_location":{"id":"pmh:oai:doaj.org/article:94849cf1e5ba4100ba52ab8cce41dc68","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/94849cf1e5ba4100ba52ab8cce41dc68","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Kongzhi Yu Xinxi Jishu, Vol 34, Pp 46-50 (2017)","raw_type":"article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"YU Wei","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"YU Wei","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"LUO Haihui","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"LUO Haihui","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"DENG Jianghui","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"DENG Jianghui","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"ZHOU Wangjun","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"ZHOU Wangjun","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"JIANG Pusheng","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"JIANG Pusheng","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5027818965","display_name":"WU Yudong","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"WU Yudong","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":true,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/igbt","display_name":"IGBT","score":0.8550000190734863},{"id":"https://openalex.org/keywords/parasitic-inductance","display_name":"parasitic inductance","score":0.9459999799728394},{"id":"https://openalex.org/keywords/parasitic-parameters","display_name":"parasitic parameters","score":0.8899999856948853},{"id":"https://openalex.org/keywords/dynamic-current-sharing","display_name":"dynamic current sharing","score":0.7889999747276306}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.7674000263214111},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.7276999950408936},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.5870000123977661},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5336999893188477},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5220999717712402},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4902999997138977},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4799000024795532},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.40610000491142273},{"id":"https://openalex.org/C2982819079","wikidata":"https://www.wikidata.org/wiki/Q1185136","display_name":"Peak current","level":4,"score":0.35040000081062317},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.34880000352859497},{"id":"https://openalex.org/C204106720","wikidata":"https://www.wikidata.org/wiki/Q15856134","display_name":"Current limiting","level":3,"score":0.299699991941452},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2678000032901764},{"id":"https://openalex.org/C47949032","wikidata":"https://www.wikidata.org/wiki/Q663542","display_name":"Overcurrent","level":3,"score":0.2653000056743622}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:doaj.org/article:94849cf1e5ba4100ba52ab8cce41dc68","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/94849cf1e5ba4100ba52ab8cce41dc68","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Kongzhi Yu Xinxi Jishu, Vol 34, Pp 46-50 (2017)","raw_type":"article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2989578188","https://openalex.org/W4226060470","https://openalex.org/W2907152736","https://openalex.org/W2036325689","https://openalex.org/W4391216871","https://openalex.org/W1547705810","https://openalex.org/W6922244219","https://openalex.org/W4402215989","https://openalex.org/W4384067465","https://openalex.org/W1896017968"],"abstract_inverted_index":{"In":[0],"order":[1],"to":[2,28],"increase":[3],"the":[4,31,41,59,70,87,90,93,107,120],"rating":[5],"current":[6,32,50,66,77,97,113],"level":[7],"of":[8,16,44,61,72,89,92,103,109,119],"device,":[9],"high":[10],"power":[11],"IGBT":[12],"is":[13,36,99,115],"often":[14],"composed":[15],"multiple":[17],"chips":[18],"and":[19,23,56,68,81,106],"subelements":[20],"in":[21,24],"parallel,":[22],"this":[25],"case,":[26],"how":[27],"effectively":[29],"control":[30],"sharing":[33,51,78,98,114],"within":[34],"device":[35],"very":[37],"important.":[38],"It":[39],"analysed":[40],"important":[42],"influence":[43,60,71,88,108],"stray":[45],"inductance":[46],"on":[47,64,75,96,111],"IGBTs":[48],"internal":[49],"by":[52,79],"experimental":[53],"research,":[54],"deduced":[55],"analyzed":[57],"theoretically":[58],"chip":[62,73,104],"parameters":[63,74,95],"static":[65],"sharing,":[67],"verified":[69],"dynamic":[76],"experiment":[80],"simulation.":[82],"The":[83],"results":[84],"showed":[85],"that":[86,102,118],"asymmetry":[91],"parasitic":[94],"greater":[100,116],"than":[101,117],"parameters,":[105],"both":[110],"turning-on":[112],"turning-off.":[121]},"counts_by_year":[],"updated_date":"2026-10-13T10:08:12.033832","created_date":"2025-10-10T00:00:00"}