{"id":"https://openalex.org/W7055986646","doi":null,"title":"Distributed Trap Levels and Hot-Electron Trapping in Power GaN HEMTs Characterization and Modeling","display_name":"Distributed Trap Levels and Hot-Electron Trapping in Power GaN HEMTs Characterization and Modeling","publication_year":null,"publication_date":null,"ids":{"openalex":"https://openalex.org/W7055986646"},"language":"en","primary_location":{"id":"pmh:oai:www.research.unipd.it:11577/3471455","doi":null,"is_oa":true,"landing_page_url":"https://hdl.handle.net/11577/3471455","pdf_url":null,"source":{"id":"https://openalex.org/S4306402547","display_name":"Padua Research Archive (University of Padova)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https://openalex.org/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/doctoralThesis"},"volume":null,"type":"dissertation","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://hdl.handle.net/11577/3471455","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074317920","display_name":"Nicola Modolo","orcid":"https://orcid.org/0000-0002-1549-1004","observed_orcids":["https://orcid.org/0000-0002-1549-1004"]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"MODOLO, NICOLA","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5074317920"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":true,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.02290000021457672,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hot-electron-trapping","display_name":"hot electron trapping","score":0.9390000104904175},{"id":"https://openalex.org/keywords/trap-states","display_name":"trap states","score":0.5619999766349792},{"id":"https://openalex.org/keywords/current-collapse","display_name":"current collapse","score":0.7059999704360962},{"id":"https://openalex.org/keywords/on-resistance-degradation","display_name":"on-resistance degradation","score":0.8410000205039978},{"id":"https://openalex.org/keywords/soft-switching","display_name":"soft switching","score":0.597000002861023},{"id":"https://openalex.org/keywords/hard-switching","display_name":"hard switching","score":0.800000011920929},{"id":"https://openalex.org/keywords/drain-current-transients","display_name":"transient drain current","score":0.7519999742507935},{"id":"https://openalex.org/keywords/stretched-exponential-kinetics","display_name":"stretched exponential kinetics","score":0.781000018119812},{"id":"https://openalex.org/keywords/compact-modeling","display_name":"compact modeling","score":0.7310000061988831},{"id":"https://openalex.org/keywords/tcad-simulation","display_name":"TCAD simulation","score":0.8029999732971191},{"id":"https://openalex.org/keywords/power-transistors","display_name":"power transistors","score":0.6399999856948853},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.5730000138282776},{"id":"https://openalex.org/keywords/activation-energy","display_name":"activation energy","score":0.4320000112056732},{"id":"https://openalex.org/keywords/electric-field-dependence","display_name":"electric field dependence","score":0.5400000214576721},{"id":"https://openalex.org/keywords/self-heating-effect","display_name":"self-heating","score":0.6779999732971191}],"concepts":[{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6766999959945679},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5881999731063843},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.5738999843597412},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5676000118255615},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.566100001335144},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5454000234603882},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.527400016784668},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46970000863075256},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.4609000086784363},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.43860000371932983},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.43369999527931213},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.42100000381469727},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41769999265670776},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4163999855518341},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.38530001044273376},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.376800000667572},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.3549000024795532},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3427000045776367},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3294000029563904},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.32839998602867126},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.3140999972820282},{"id":"https://openalex.org/C28719098","wikidata":"https://www.wikidata.org/wiki/Q44946","display_name":"Point (geometry)","level":2,"score":0.3010999858379364},{"id":"https://openalex.org/C109792285","wikidata":"https://www.wikidata.org/wiki/Q174789","display_name":"Millimeter","level":2,"score":0.289000004529953},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.27889999747276306},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.2752000093460083},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2653000056743622},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.26510000228881836},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.26260000467300415},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.2612000107765198},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.2515000104904175}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:www.research.unipd.it:11577/3471455","doi":null,"is_oa":true,"landing_page_url":"https://hdl.handle.net/11577/3471455","pdf_url":null,"source":{"id":"https://openalex.org/S4306402547","display_name":"Padua Research Archive (University of Padova)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https://openalex.org/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/doctoralThesis"}],"best_oa_location":{"id":"pmh:oai:www.research.unipd.it:11577/3471455","doi":null,"is_oa":true,"landing_page_url":"https://hdl.handle.net/11577/3471455","pdf_url":null,"source":{"id":"https://openalex.org/S4306402547","display_name":"Padua Research Archive (University of Padova)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https://openalex.org/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/doctoralThesis"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3158796274","https://openalex.org/W2045295969","https://openalex.org/W3097128919","https://openalex.org/W2542780027","https://openalex.org/W4388079109","https://openalex.org/W2795013894","https://openalex.org/W3139430276","https://openalex.org/W3134151424","https://openalex.org/W7024853485","https://openalex.org/W4306783492"],"abstract_inverted_index":{"Gallium":[0],"Nitride":[1],"(GaN)-based":[2],"high":[3],"electron":[4,259],"mobility":[5],"transistors":[6],"(HEMTs)":[7],"are":[8,58,296,319,371],"rapidly":[9],"emerging":[10],"as":[11,38,40,373],"front-runners":[12],"in":[13,93,161,199,214,261,289,309,321,354,448,462],"high-power":[14],"mm-wave":[15],"circuit":[16],"applications.":[17],"Possible":[18],"targets":[19],"that":[20],"would":[21],"benefit":[22],"of":[23,26,43,52,71,79,95,103,117,132,196,211,224,234,256,293,305,317,348,351,364,393,414,420,440,476],"the":[24,41,48,69,77,98,104,133,137,162,180,193,201,218,250,257,278,286,291,303,323,332,342,360,365,367,385,391,394,415,428,438,449,464,469,474,477],"advantages":[25],"GaN\u2013based":[27],"devices":[28,184],"include":[29],"efficient":[30],"power":[31,311],"supplies,":[32],"DC/DC":[33],"converters":[34],"and":[35,45,63,112,114,129,147,204,221,272,282,362,451,479],"AC/DC":[36],"adapters,":[37],"well":[39],"field":[42,198,281],"radars":[44],"telecommunications.":[46],"Despite":[47],"recent":[49],"commercial":[50],"success":[51],"GaN-based":[53,74,262,310,355],"devices,":[54],"internal":[55],"physical":[56,254],"mechanisms":[57],"often":[59],"not":[60,169],"completely":[61],"understood":[62],"still":[64],"constitute":[65],"a":[66,72,81,90,127,158,171,208,235,253,267,337,349,408,441,459],"challenge":[67],"to":[68,125,191,205,216,239,406,473],"development":[70],"mature":[73],"technology.":[75],"Besides":[76],"difficulties":[78],"growing":[80],"high\u2013quality":[82],"GaN":[83,429],"material,":[84],"point":[85,116],"defects":[86],"at":[87],"interfaces":[88],"play":[89],"major":[91,159],"role":[92,160,195,461],"terms":[94],"reliability.":[96],"In":[97],"present":[99],"thesis,":[100,121],"several":[101,183],"aspect":[102],"device":[105,138,175],"instability":[106],"have":[107,170],"been":[108],"investigated":[109],"from":[110],"both":[111],"experimental":[113,273,386],"theoretical":[115,270,398],"view.":[118],"Throughout":[119],"this":[120,402],"our":[122],"goal":[123],"is":[124,264,423,434,443,471],"build":[126],"quantitative":[128],"qualitative":[130],"understanding":[131,255],"main":[134],"factors":[135],"undermining":[136],"stability":[139],"under":[140],"real":[141],"application":[142],"conditions.":[143],"By":[144],"comparing":[145],"Hard":[146],"Soft":[148],"switching":[149],"turn-on":[150,155],"commutations,":[151],"we":[152,188,226,335],"demonstrated":[153],"how":[154,437],"stress":[156,230],"plays":[157,458],"on-resistance":[163],"degradation,":[164],"while":[165,468],"off-state":[166],"bias":[167],"does":[168],"relevant":[172],"influence":[173],"on":[174,182,228,249,277,285,331,427,445],"properties.":[176],"Furthermore,":[177],"by":[178,232,247,329,381],"repeating":[179],"experiment":[181],"with":[185,266],"different":[186],"L_GD,":[187],"were":[189],"able":[190,238],"demonstrate":[192],"important":[194,300],"electric":[197,280],"determining":[200,290,322,463],"R_ON":[202],"increase":[203],"rule":[206],"out":[207],"significant":[209],"contribution":[210],"self-heating.":[212],"Then,":[213],"order":[215],"observe":[217],"full":[219],"trapping":[220,251,307],"de-trapping":[222],"kinetics":[223,308,419],"hot-electrons":[225],"focused":[227],"semi-ON":[229],"analysis":[231,271],"means":[233],"custom":[236],"setup":[237],"perform":[240],"Drain":[241],"Current":[242],"Transient":[243],"(DCT)":[244],"analysis.":[245],"Firstly,":[246],"focusing":[248,330],"phase,":[252,334],"hot":[258],"phenomena":[260],"HEMTs":[263,422],"developed":[265,395],"cross-comparison":[268],"between":[269],"data.":[274],"Linear":[275],"dependency":[276,284],"applied":[279],"logarithmic":[283],"current":[287,294,324],"density":[288],"severity":[292],"collapse":[295,325],"found.":[297],"Results":[298],"provide":[299],"information":[301],"for":[302,340,375,411],"modeling":[304,413],"hot-electron":[306],"transistors.":[312],"The":[313,378,397,455],"first":[314],"10":[315],"us":[316,405],"operation":[318],"critical":[320],"during":[326],"stress.":[327],"Secondly,":[328],"recovery":[333],"propose":[336,407],"general":[338],"methodology":[339],"mapping":[341],"properties":[343],"(activation":[344],"energy,":[345],"cross":[346],"sections)":[347],"distribution":[350],"surface/interface":[352],"states":[353],"electronic":[356],"devices.":[357],"To":[358],"prove":[359],"validity":[361],"usefulness":[363],"model,":[366],"extracted":[368],"map":[369],"distributions":[370],"used":[372],"input":[374],"TCAD":[376,382],"simulations.":[377],"results":[379],"obtained":[380],"closely":[383],"match":[384],"transient":[387],"curves,":[388],"thus":[389],"confirming":[390],"effectiveness":[392],"technique.":[396],"knowledge":[399],"built":[400],"along":[401],"thesis":[403],"allowed":[404],"new":[409],"approach":[410],"compact":[412],"stretched":[416],"exponential":[417],"trapping/de-trapping":[418],"p-GaN":[421],"proposed.":[424],"Novel":[425],"insight":[426],"HEMT":[430],"dynamic":[431],"performance":[432,465],"degradation":[433,466],"given":[435],"highlighting":[436],"criticality":[439],"trap":[442],"dependent":[444],"its":[446],"location":[447],"capture":[450,478],"emission":[452,480],"time":[453],"map.":[454],"duty":[456],"cycle":[457],"key":[460],"trajectory,":[467],"frequency":[470],"related":[472],"amplitude":[475],"process":[481],"per":[482],"cycle.":[483]},"counts_by_year":[],"updated_date":"2026-11-06T12:05:46.655746","created_date":"2025-10-10T00:00:00"}