{"id":"https://openalex.org/W644133240","doi":"https://doi.org/10.1016/j.jcrysgro.2015.04.026","title":"Room-temperature fabrication of highly oriented \u03b2-Ga2O3 thin films by excimer laser annealing","display_name":"Room-temperature fabrication of highly oriented \u03b2-Ga2O3 thin films by excimer laser annealing","publication_year":2015,"publication_date":"2015-05-08","ids":{"openalex":"https://openalex.org/W644133240","doi":"https://doi.org/10.1016/j.jcrysgro.2015.04.026","mag":"644133240"},"language":"en","primary_location":{"id":"doi:10.1016/j.jcrysgro.2015.04.026","doi":"https://doi.org/10.1016/j.jcrysgro.2015.04.026","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jcrysgro.2015.04.026","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016454756","display_name":"Daishi Shiojiri","orcid":"https://orcid.org/0000-0001-8161-8969","observed_orcids":["https://orcid.org/0000-0001-8161-8969"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daishi Shiojiri","raw_affiliation_strings":["Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103444430","display_name":"Ryosuke Yamauchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryosuke Yamauchi","raw_affiliation_strings":["Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008141743","display_name":"Daiji Fukuda","orcid":"https://orcid.org/0000-0003-0555-4320","observed_orcids":["https://orcid.org/0000-0003-0555-4320"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daiji Fukuda","raw_affiliation_strings":["Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077598994","display_name":"Nobuo Tsuchimine","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089404","display_name":"Toshima Manufacturing (Japan)","ror":"https://ror.org/009ag0z22","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210089404"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Nobuo Tsuchimine","raw_affiliation_strings":["TOSHIMA Manufacturing Company Limited, 1414 Shimonomoto, Higashimatsuyama-shi, Saitama 355-0036, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TOSHIMA Manufacturing Company Limited, 1414 Shimonomoto, Higashimatsuyama-shi, Saitama 355-0036, Japan","institution_ids":["https://openalex.org/I4210089404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074856392","display_name":"Satoru Kaneko","orcid":"https://orcid.org/0000-0003-0823-1666","observed_orcids":["https://orcid.org/0000-0003-0823-1666"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]},{"id":"https://openalex.org/I4210147419","display_name":"Kanagawa Industrial Technology Center","ror":"https://ror.org/052fvq722","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210147419"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoru Kaneko","raw_affiliation_strings":["Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","Kanagawa Industrial Technology Center, 705-1 Shimo-Imaizumi, Ebina-shi, Kanagawa 243-0435, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Kanagawa Industrial Technology Center, 705-1 Shimo-Imaizumi, Ebina-shi, Kanagawa 243-0435, Japan","institution_ids":["https://openalex.org/I4210147419"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033786363","display_name":"Akifumi Matsuda","orcid":"https://orcid.org/0000-0002-8707-9094","observed_orcids":["https://orcid.org/0000-0002-8707-9094"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akifumi Matsuda","raw_affiliation_strings":["Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003947120","display_name":"Mamoru Yoshimoto","orcid":"https://orcid.org/0000-0003-4060-0062","observed_orcids":["https://orcid.org/0000-0003-4060-0062"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Mamoru Yoshimoto","raw_affiliation_strings":["Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J3-16 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5003947120"],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.6537,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.63033008,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"424","issue":null,"first_page":"38","last_page":"41"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.9470000267028809},{"id":"https://openalex.org/keywords/gallium-oxide-thin-films","display_name":"gallium oxide thin films","score":0.9679999947547913},{"id":"https://openalex.org/keywords/excimer-laser-annealing","display_name":"excimer laser annealing","score":0.9710000157356262},{"id":"https://openalex.org/keywords/krf-laser","display_name":"KrF excimer laser","score":0.8550000190734863},{"id":"https://openalex.org/keywords/room-temperature-crystallization","display_name":"room-temperature crystallization","score":0.7919999957084656},{"id":"https://openalex.org/keywords/pulsed-laser-deposition","display_name":"pulsed laser deposition","score":0.8209999799728394},{"id":"https://openalex.org/keywords/101-orientation","display_name":"(101) orientation","score":0.871999979019165},{"id":"https://openalex.org/keywords/optical-band-gap","display_name":"optical band gap","score":0.800000011920929},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.9430000185966492},{"id":"https://openalex.org/keywords/grain-growth","display_name":"grain growth","score":0.7860000133514404},{"id":"https://openalex.org/keywords/alpha-al2o3-substrate","display_name":"\u03b1-Al2O3 substrate","score":0.8119999766349792}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8218833208084106},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.7971142530441284},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.7746936082839966},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.7608258128166199},{"id":"https://openalex.org/C2780477314","wikidata":"https://www.wikidata.org/wiki/Q241056","display_name":"Excimer laser","level":3,"score":0.7462312579154968},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6933259963989258},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5462091565132141},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49294447898864746},{"id":"https://openalex.org/C37982897","wikidata":"https://www.wikidata.org/wiki/Q901321","display_name":"Pulsed laser deposition","level":3,"score":0.4524102210998535},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.45061883330345154},{"id":"https://openalex.org/C150493377","wikidata":"https://www.wikidata.org/wiki/Q1427863","display_name":"Transmittance","level":2,"score":0.44923076033592224},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.42376330494880676},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.37338727712631226},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.35891836881637573},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1860775649547577},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18037888407707214},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.1740991473197937},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10490718483924866},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.jcrysgro.2015.04.026","doi":"https://doi.org/10.1016/j.jcrysgro.2015.04.026","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jcrysgro.2015.04.026","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3496626114","display_name":"Room-temperature solid-phase epitaxial crystallization of wide-gap semiconducting Ga2O3 thin films","funder_award_id":"26630306","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"},{"id":"https://openalex.org/G8562881113","display_name":"Development of wide-bandgap oxide epitaxial thin films by multi-wavelength excimer laser processing and substrates modification","funder_award_id":"15K20988","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"}],"funders":[{"id":"https://openalex.org/F4320311007","display_name":"Nippon Sheet Glass Foundation for Materials Science and Engineering","ror":"https://ror.org/02d1d3446"},{"id":"https://openalex.org/F4320322318","display_name":"Kato Foundation for Promotion of Science","ror":"https://ror.org/01p7hf548"},{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1492977420","https://openalex.org/W1973634608","https://openalex.org/W1976589539","https://openalex.org/W1979776415","https://openalex.org/W1988564875","https://openalex.org/W1990807972","https://openalex.org/W2001601710","https://openalex.org/W2002536446","https://openalex.org/W2007930532","https://openalex.org/W2008816062","https://openalex.org/W2008924171","https://openalex.org/W2017935670","https://openalex.org/W2020431932","https://openalex.org/W2022771263","https://openalex.org/W2023580388","https://openalex.org/W2026247494","https://openalex.org/W2027033783","https://openalex.org/W2027101237","https://openalex.org/W2034462051","https://openalex.org/W2043874754","https://openalex.org/W2050332038","https://openalex.org/W2052589391","https://openalex.org/W2060387778","https://openalex.org/W2061808720","https://openalex.org/W2070759111","https://openalex.org/W2081456112","https://openalex.org/W2081772232","https://openalex.org/W2088139998","https://openalex.org/W2090872754","https://openalex.org/W2091677704","https://openalex.org/W2165964889","https://openalex.org/W2177770936","https://openalex.org/W2346046415"],"related_works":["https://openalex.org/W2521530241","https://openalex.org/W4365137777","https://openalex.org/W3169656063","https://openalex.org/W6996123115","https://openalex.org/W2530983713","https://openalex.org/W4405624824","https://openalex.org/W7024582899","https://openalex.org/W4280609133","https://openalex.org/W177551379","https://openalex.org/W3097353393"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-31T12:09:11.096373","created_date":"2016-06-24T00:00:00"}