{"id":"https://openalex.org/W624611519","doi":null,"title":"Semiconductor Devices a Simulation Approach","display_name":"Semiconductor Devices a Simulation Approach","publication_year":1997,"publication_date":"1997-01-01","ids":{"openalex":"https://openalex.org/W624611519","mag":"624611519"},"language":"en","primary_location":{"id":"mag:1176725620","doi":null,"is_oa":false,"landing_page_url":"https://dl.acm.org/citation.cfm?id=550693","pdf_url":null,"source":{"id":"https://openalex.org/S4306478100","display_name":"Prentice Hall PTR eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"ebook platform"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Prentice Hall PTR eBooks","raw_type":null},"volume":null,"type":"book","indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"K. Kramer","orcid":"https://orcid.org/0000-0003-0375-1355","observed_orcids":["https://orcid.org/0000-0003-0375-1355"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Kramer","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0003-0375-1355","affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5109966192","display_name":"W. N. G. Hitchon","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"W. N. G. Hitchon","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.8629,"has_fulltext":false,"cited_by_count":72,"citation_normalized_percentile":{"value":0.89813243,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9018999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9018999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.03759999945759773,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.013199999928474426,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/semiconductor-device-simulation","display_name":"semiconductor device simulation","score":0.9670000076293945},{"id":"https://openalex.org/keywords/semiconductor-equations","display_name":"semiconductor equations","score":0.7929999828338623},{"id":"https://openalex.org/keywords/numerical-solution-of-partial-differential-equations","display_name":"numerical solution of partial differential equations","score":0.7739999890327454},{"id":"https://openalex.org/keywords/p-n-diodes","display_name":"p-n junction diodes","score":0.8009999990463257},{"id":"https://openalex.org/keywords/bipolar-junction-transistors","display_name":"bipolar transistors","score":0.9990000128746033},{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.9679999947547913},{"id":"https://openalex.org/keywords/mos-structures","display_name":"MOS structures","score":0.949999988079071},{"id":"https://openalex.org/keywords/power-semiconductor-devices","display_name":"power semiconductor devices","score":1.0},{"id":"https://openalex.org/keywords/mixed-mode-simulation","display_name":"mixed-mode simulation","score":0.9549999833106995},{"id":"https://openalex.org/keywords/kinetic-transport-model","display_name":"kinetic transport model","score":0.9829999804496765},{"id":"https://openalex.org/keywords/transport-phenomena","display_name":"transport phenomena","score":0.6919999718666077},{"id":"https://openalex.org/keywords/electromagnetism","display_name":"electromagnetism","score":0.7990000247955322}],"concepts":[{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.7160815596580505},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7089870572090149},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.6754893064498901},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5734346508979797},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.542312502861023},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.49977850914001465},{"id":"https://openalex.org/C500300565","wikidata":"https://www.wikidata.org/wiki/Q925667","display_name":"Computer simulation","level":2,"score":0.4842347800731659},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4431101679801941},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4348861575126648},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42188766598701477},{"id":"https://openalex.org/C48753275","wikidata":"https://www.wikidata.org/wiki/Q11216","display_name":"Numerical analysis","level":2,"score":0.41025251150131226},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2943839430809021},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2355990707874298},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2269507646560669},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.1578080654144287},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13357579708099365},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12239283323287964},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.11661162972450256},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.06850290298461914},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"mag:1176725620","doi":null,"is_oa":false,"landing_page_url":"https://dl.acm.org/citation.cfm?id=550693","pdf_url":null,"source":{"id":"https://openalex.org/S4306478100","display_name":"Prentice Hall PTR eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"ebook platform"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Prentice Hall PTR eBooks","raw_type":null},{"id":"mag:624611519","doi":null,"is_oa":false,"landing_page_url":"http://ci.nii.ac.jp/ncid/BA38814799","pdf_url":null,"source":{"id":"https://openalex.org/S4306478100","display_name":"Prentice Hall PTR eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"ebook platform"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Prentice Hall PTR eBooks","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3020639041","https://openalex.org/W3197419620","https://openalex.org/W1176725620","https://openalex.org/W2494165696","https://openalex.org/W2041301450","https://openalex.org/W7096227084","https://openalex.org/W604686829","https://openalex.org/W1596724387","https://openalex.org/W266834470","https://openalex.org/W1483174452"],"abstract_inverted_index":{"1.":[0],"Introduction.":[1],"I.":[2],"BASICS.":[3],"2.":[4],"Fundamentals":[5],"of":[6,29],"Electromagnetism":[7],"and":[8,15],"its":[9],"Numerical":[10,17,27],"Analysis.":[11,18],"3.":[12],"Transport":[13,64],"Phenomena":[14],"Their":[16],"II.":[19],"SEMICONDUCTOR":[20,35],"SIMULATION.":[21],"4.":[22],"The":[23,32,70],"Semiconductor":[24,54],"Equations.":[25],"5.":[26],"Solution":[28],"PDEs.":[30],"6.":[31],"SGFramework.":[33],"III.":[34],"DEVICES.":[36],"7.":[37],"PN":[38],"Junction":[39,43,46],"Diodes.":[40],"8.":[41],"Bipolar":[42],"Transistors.":[44,48],"9.":[45],"Field-Effect":[47],"10.":[49],"Metal-Oxide-Semiconductor":[50],"Structures.":[51],"11.":[52],"Power":[53],"Devices.":[55],"IV.":[56],"ADVANCED":[57],"TOPICS.":[58],"12.":[59],"Mixed-Mode":[60],"Simulations.":[61],"13.":[62],"Kinetic":[63],"Models.":[65],"14.":[66],"Related":[67],"Work.":[68],"15.":[69],"SGFramework":[71],"User's":[72],"Manual.":[73]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}