{"id":"https://openalex.org/W4417409657","doi":"https://doi.org/10.35848/1347-4065/ae2d5f","title":"Growth and characterization of InGaAs-channel HEMTs on GaAs (100) with pre-grown InP metamorphic buffer layers","display_name":"Growth and characterization of InGaAs-channel HEMTs on GaAs (100) with pre-grown InP metamorphic buffer layers","publication_year":2025,"publication_date":"2025-12-16","ids":{"openalex":"https://openalex.org/W4417409657","doi":"https://doi.org/10.35848/1347-4065/ae2d5f"},"language":"en","primary_location":{"id":"doi:10.35848/1347-4065/ae2d5f","doi":"https://doi.org/10.35848/1347-4065/ae2d5f","is_oa":false,"landing_page_url":"https://doi.org/10.35848/1347-4065/ae2d5f","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103271564","display_name":"Hyunchul Jang","orcid":"https://orcid.org/0000-0002-4349-5272","observed_orcids":["https://orcid.org/0000-0002-4349-5272"]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hyunchul Jang","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080591560","display_name":"Jae\u2010Phil Shim","orcid":"https://orcid.org/0000-0002-0449-2079","observed_orcids":["https://orcid.org/0000-0002-0449-2079"]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Phil Shim","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Geunuk Han","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Geunuk Han","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Yunji Jeong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yunji Jeong","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Inseon Song","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Inseon Song","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055001566","display_name":"I.-G. Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Il-Hyeong Lee","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001331708","display_name":"Deoksoo Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Deoksoo Park","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083643032","display_name":"Eun-Kyung Chu","orcid":"https://orcid.org/0009-0002-3179-1338","observed_orcids":["https://orcid.org/0009-0002-3179-1338"]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Eun-kyung Chu","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022652504","display_name":"S. H. Shin","orcid":"https://orcid.org/0000-0003-4543-7233","observed_orcids":["https://orcid.org/0000-0003-4543-7233"]},"institutions":[{"id":"https://openalex.org/I24541011","display_name":"Soonchunhyang University","ror":"https://ror.org/03qjsrb10","country_code":"KR","type":"education","lineage":["https://openalex.org/I24541011"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung Heon Shin","raw_affiliation_strings":["Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, 22, Soonchunhyang-ro, Asan-si, Chungcheongnam-do, Republic of Korea","Soonchunhyang University, Asan-si, Chungcheongnam-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, 22, Soonchunhyang-ro, Asan-si, Chungcheongnam-do, Republic of Korea","institution_ids":["https://openalex.org/I24541011"]},{"raw_affiliation_string":"Soonchunhyang University, Asan-si, Chungcheongnam-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I24541011"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101199844","display_name":"Keun Man Song","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157704","display_name":"Korea Advanced Nano Fab Center","ror":"https://ror.org/04vccma76","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210157704"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Keun-Man Song","raw_affiliation_strings":["Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I4210157704"]},{"raw_affiliation_string":"Korea Advanced Nano Fab Center, Suwon-si, Gyeonggi-do, Korea (the Republic of)","institution_ids":["https://openalex.org/I4210157704"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5083643032","https://openalex.org/A5103271564"],"corresponding_institution_ids":["https://openalex.org/I4210157704"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"65","issue":"1","first_page":"01SP06","last_page":"01SP06"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.6054999828338623,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.6054999828338623,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.16030000150203705,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.11349999904632568,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingaas-hemt","display_name":"InGaAs HEMT","score":0.8420000076293945},{"id":"https://openalex.org/keywords/metamorphic-buffer-layers","display_name":"metamorphic buffer layers","score":0.7850000262260437},{"id":"https://openalex.org/keywords/gaas-100-substrate","display_name":"GaAs(100) substrate","score":0.9559999704360962},{"id":"https://openalex.org/keywords/regrowth","display_name":"regrowth","score":0.7110000252723694},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.8320000171661377},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.968999981880188},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.9980000257492065},{"id":"https://openalex.org/keywords/strain-relaxation","display_name":"strain relaxation","score":0.875},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.7279999852180481}],"concepts":[{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.8109999895095825},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8091999888420105},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.6865000128746033},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6431999802589417},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5034999847412109},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.49129998683929443},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.49059998989105225},{"id":"https://openalex.org/C26687426","wikidata":"https://www.wikidata.org/wiki/Q47069","display_name":"Metamorphic rock","level":2,"score":0.45350000262260437},{"id":"https://openalex.org/C2776029896","wikidata":"https://www.wikidata.org/wiki/Q3935810","display_name":"Relaxation (psychology)","level":2,"score":0.42739999294281006},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.3675999939441681},{"id":"https://openalex.org/C2778022156","wikidata":"https://www.wikidata.org/wiki/Q576145","display_name":"Strain (injury)","level":2,"score":0.2890999913215637},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.28780001401901245},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.28200000524520874},{"id":"https://openalex.org/C202974441","wikidata":"https://www.wikidata.org/wiki/Q2576844","display_name":"Stress relaxation","level":3,"score":0.27630001306533813},{"id":"https://openalex.org/C164675345","wikidata":"https://www.wikidata.org/wiki/Q898226","display_name":"Crystallographic defect","level":2,"score":0.2728999853134155},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.2567000091075897}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.35848/1347-4065/ae2d5f","doi":"https://doi.org/10.35848/1347-4065/ae2d5f","is_oa":false,"landing_page_url":"https://doi.org/10.35848/1347-4065/ae2d5f","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1967742209","https://openalex.org/W1990104550","https://openalex.org/W1994772311","https://openalex.org/W1996565300","https://openalex.org/W2015355974","https://openalex.org/W2016785852","https://openalex.org/W2030121121","https://openalex.org/W2043481139","https://openalex.org/W2052220131","https://openalex.org/W2063353813","https://openalex.org/W2065657652","https://openalex.org/W2069407006","https://openalex.org/W2070213675","https://openalex.org/W2072682334","https://openalex.org/W2078505695","https://openalex.org/W2085805768","https://openalex.org/W2107239128","https://openalex.org/W2125628817","https://openalex.org/W2131450598","https://openalex.org/W2137878337","https://openalex.org/W2158407577","https://openalex.org/W2554015502","https://openalex.org/W2789879211","https://openalex.org/W2935827400","https://openalex.org/W3021080815","https://openalex.org/W3033509974","https://openalex.org/W3094289712","https://openalex.org/W3185099297","https://openalex.org/W4281483744"],"related_works":["https://openalex.org/W1689189640","https://openalex.org/W2284723667","https://openalex.org/W2180982272","https://openalex.org/W1630217423","https://openalex.org/W2393530363","https://openalex.org/W2512881878","https://openalex.org/W2792903056","https://openalex.org/W1977199506","https://openalex.org/W2105784472","https://openalex.org/W2047563248"],"abstract_inverted_index":{"Abstract":[0],"The":[1],"structural":[2,64],"and":[3,33,44,53,77],"electrical":[4],"characteristics":[5],"of":[6,62,74],"InGaAs":[7],"high-electron-mobility":[8],"transistors":[9],"regrown":[10],"on":[11,16,49,66,91],"InP":[12,51],"metamorphic":[13],"buffers":[14,38],"(MMBs)":[15],"GaAs":[17],"(100)":[18],"substrates":[19,52],"were":[20],"investigated.":[21],"Increasing":[22],"the":[23,40,60,72],"buffer":[24,81],"thickness":[25],"improved":[26],"crystalline":[27],"quality":[28],"by":[29],"reducing":[30],"dislocation":[31],"density":[32],"surface":[34],"roughness,":[35],"whereas":[36],"thinner":[37],"degraded":[39],"two-dimensional":[41],"electron":[42],"gas":[43],"DC":[45],"performance.":[46],"Simultaneous":[47],"regrowth":[48],"conventional":[50],"MMBs":[54],"under":[55],"identical":[56],"conditions":[57],"directly":[58],"assessed":[59],"impact":[61],"MMB-induced":[63],"defects":[65],"device":[67],"behavior.":[68],"These":[69],"findings":[70],"underscore":[71],"importance":[73],"strain":[75],"relaxation":[76],"defect":[78],"control":[79],"in":[80],"engineering,":[82],"providing":[83],"practical":[84],"guidance":[85],"for":[86],"integrating":[87],"high-performance":[88],"III\u2013V":[89],"devices":[90],"lattice-mismatched":[92],"platforms.":[93]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2025-12-16T00:00:00"}