{"id":"https://openalex.org/W4416601307","doi":"https://doi.org/10.1149/ma2025-02171182mtgabs","title":"Time-Dependent Quantized Conductance Degradation in High-K Switching Devices Treated with H-Plasma","display_name":"Time-Dependent Quantized Conductance Degradation in High-K Switching Devices Treated with H-Plasma","publication_year":2025,"publication_date":"2025-11-24","ids":{"openalex":"https://openalex.org/W4416601307","doi":"https://doi.org/10.1149/ma2025-02171182mtgabs"},"language":"en","primary_location":{"id":"doi:10.1149/ma2025-02171182mtgabs","doi":"https://doi.org/10.1149/ma2025-02171182mtgabs","is_oa":false,"landing_page_url":"https://doi.org/10.1149/ma2025-02171182mtgabs","pdf_url":null,"source":{"id":"https://openalex.org/S4210168594","display_name":"ECS Meeting Abstracts","issn_l":"1091-8213","issn":["1091-8213","2151-2035","2151-2043","2152-8365"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Meeting Abstracts","raw_type":"journal-article"},"volume":null,"type":"conference-abstract","is_traditional":false,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021679025","display_name":"Aseel Zeinati","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118118575","display_name":"New Jersey Institute of Technology","ror":"https://ror.org/05e74xb87","country_code":"US","type":"education","lineage":["https://openalex.org/I118118575"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Aseel Zeinati","raw_affiliation_strings":["New Jersey Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"New Jersey Institute of Technology","institution_ids":["https://openalex.org/I118118575"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062951157","display_name":"D. Misra","orcid":"https://orcid.org/0000-0001-6844-6058","observed_orcids":["https://orcid.org/0000-0001-6844-6058"]},"institutions":[{"id":"https://openalex.org/I118118575","display_name":"New Jersey Institute of Technology","ror":"https://ror.org/05e74xb87","country_code":"US","type":"education","lineage":["https://openalex.org/I118118575"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Durga Misra","raw_affiliation_strings":["New Jersey Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"New Jersey Institute of Technology","institution_ids":["https://openalex.org/I118118575"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073512475","display_name":"Dina H. Triyoso","orcid":"https://orcid.org/0000-0002-6186-2961","observed_orcids":["https://orcid.org/0000-0002-6186-2961"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dina H. Triyoso","raw_affiliation_strings":["TEL Technology Center, America, LLC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063843304","display_name":"Kandabara Tapily","orcid":"https://orcid.org/0000-0001-8805-0704","observed_orcids":["https://orcid.org/0000-0001-8805-0704"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kandabara Tapily","raw_affiliation_strings":["TEL Technology Center, America, LLC"],"raw_orcid":"https://orcid.org/0000-0001-8805-0704","affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060825080","display_name":"Robert D. Clark","orcid":"https://orcid.org/0000-0002-8090-1049","observed_orcids":["https://orcid.org/0000-0002-8090-1049"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Robert D Clark","raw_affiliation_strings":["TEL Technology Center, America, LLC"],"raw_orcid":"https://orcid.org/0000-0002-8090-1049","affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088072473","display_name":"Sarah F. Lombardo","orcid":"https://orcid.org/0000-0001-6163-2376","observed_orcids":["https://orcid.org/0000-0001-6163-2376"]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sarah Lombardo","raw_affiliation_strings":["Tokyo electron limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo electron limited","institution_ids":["https://openalex.org/I114132059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040404739","display_name":"Cory S. Wajda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Cory S Wajda","raw_affiliation_strings":["TEL Technology Center, America, LLC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5020029437","display_name":"Gert J. Leusink","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Gert J Leusink","raw_affiliation_strings":["TEL Technology Center, America, LLC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"MA2025-02","issue":"17","first_page":"1182","last_page":"1182"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"resistive random access memory","score":0.9710000157356262},{"id":"https://openalex.org/keywords/hydrogen-plasma-treatment","display_name":"hydrogen plasma treatment","score":0.8109999895095825},{"id":"https://openalex.org/keywords/multilevel-memory","display_name":"multilevel memory","score":0.7080000042915344},{"id":"https://openalex.org/keywords/neuromorphic-computing","display_name":"neuromorphic computing","score":0.8610000014305115},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.7540000081062317},{"id":"https://openalex.org/keywords/retention-stability","display_name":"retention stability","score":0.5839999914169312},{"id":"https://openalex.org/keywords/tin-electrodes","display_name":"TiN electrodes","score":0.6430000066757202},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.6050000190734863},{"id":"https://openalex.org/keywords/spiking-neural-networks","display_name":"spiking neural networks","score":0.703000009059906},{"id":"https://openalex.org/keywords/defect-migration","display_name":"defect migration","score":0.5329999923706055},{"id":"https://openalex.org/keywords/formation-energy","display_name":"formation energy","score":0.4950000047683716},{"id":"https://openalex.org/keywords/capping-layer","display_name":"capping layer","score":0.6380000114440918}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8813999891281128},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8784000277519226},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6291000247001648},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6010000109672546},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5023000240325928},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48159998655319214},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.46070000529289246},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45649999380111694},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.4564000070095062},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.4198000133037567},{"id":"https://openalex.org/C28855332","wikidata":"https://www.wikidata.org/wiki/Q198099","display_name":"Quantization (signal processing)","level":2,"score":0.4090000092983246},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.3822000026702881},{"id":"https://openalex.org/C20518276","wikidata":"https://www.wikidata.org/wiki/Q186130","display_name":"Pulse-amplitude modulation","level":4,"score":0.3808000087738037},{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.3797000050544739},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.36329999566078186},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.34689998626708984},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.3165000081062317},{"id":"https://openalex.org/C180205008","wikidata":"https://www.wikidata.org/wiki/Q159190","display_name":"Amplitude","level":2,"score":0.3021000027656555},{"id":"https://openalex.org/C66949984","wikidata":"https://www.wikidata.org/wiki/Q7662043","display_name":"Synaptic weight","level":3,"score":0.2912999987602234},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2888999879360199},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2847000062465668},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.28060001134872437},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.2786000072956085},{"id":"https://openalex.org/C26517878","wikidata":"https://www.wikidata.org/wiki/Q228039","display_name":"Key (lock)","level":2,"score":0.2777999937534332},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2773999869823456},{"id":"https://openalex.org/C202374169","wikidata":"https://www.wikidata.org/wiki/Q124291","display_name":"Electrical conductor","level":2,"score":0.274399995803833},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.2732999920845032},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.27090001106262207},{"id":"https://openalex.org/C92746544","wikidata":"https://www.wikidata.org/wiki/Q585184","display_name":"Pulse-width modulation","level":3,"score":0.2700999975204468},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.26570001244544983},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.26440000534057617},{"id":"https://openalex.org/C2742236","wikidata":"https://www.wikidata.org/wiki/Q924713","display_name":"Efficient energy use","level":2,"score":0.263700008392334},{"id":"https://openalex.org/C2779426163","wikidata":"https://www.wikidata.org/wiki/Q17123760","display_name":"Microheater","level":4,"score":0.2597000002861023},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.25839999318122864},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.25619998574256897},{"id":"https://openalex.org/C2778915421","wikidata":"https://www.wikidata.org/wiki/Q3643177","display_name":"Performance improvement","level":2,"score":0.25429999828338623}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/ma2025-02171182mtgabs","doi":"https://doi.org/10.1149/ma2025-02171182mtgabs","is_oa":false,"landing_page_url":"https://doi.org/10.1149/ma2025-02171182mtgabs","pdf_url":null,"source":{"id":"https://openalex.org/S4210168594","display_name":"ECS Meeting Abstracts","issn_l":"1091-8213","issn":["1091-8213","2151-2035","2151-2043","2152-8365"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Meeting Abstracts","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W7106438512","https://openalex.org/W4405590512","https://openalex.org/W4412541031","https://openalex.org/W4404415504","https://openalex.org/W7165687393","https://openalex.org/W3215049384","https://openalex.org/W4294363524","https://openalex.org/W4415405241","https://openalex.org/W4309818578","https://openalex.org/W4409762956"],"abstract_inverted_index":{"Resistive":[0],"Random-Access":[1],"Memory":[2],"(RRAM)":[3],"is":[4],"widely":[5],"recognized":[6],"for":[7,31,54,66,71,150,194,258],"its":[8],"analog":[9,195],"switching":[10,196,260],"behavior,":[11,92],"scalability,":[12],"excellent":[13],"endurance,":[14],"and":[15,56,74,80,89,101,118,143,157,167,187,210,217,262,267,298,356,377,395,418,428,456,488,514,533,562,589],"low":[16],"power":[17],"consumption":[18],"[1,2].":[19],"These":[20],"properties":[21],"make":[22],"RRAM":[23,37,67,133,192,240],"devices":[24,38,134,193,245,271,308],"promising":[25],"candidate":[26],"as":[27,252,264],"a":[28,102,275,317,374],"non-volatile":[29],"memory":[30,72,152],"neuromorphic":[32,107],"computing.":[33],"The":[34,61,154,244,270],"capability":[35],"of":[36,170,200,231,236,277,390],"to":[39,45,68,163,274,325,335,349,383],"mimic":[40],"synaptic":[41],"weight":[42],"modulation":[43],"due":[44,334],"their":[46],"multi-level":[47,151],"cell":[48],"characteristics":[49,64,95],"makes":[50],"them":[51,148],"highly":[52],"suited":[53],"artificial":[55],"spiking":[57],"neural":[58],"networks":[59],"[3,4].":[60],"most":[62],"significant":[63,375],"required":[65],"be":[69,333,350,381],"used":[70],"applications":[73],"learning":[75,119],"systems":[76],"are":[77,96,250],"long-term":[78],"retention":[79],"stable":[81,359],"multilevel":[82],"conductance":[83,109,234,321,367,393],"states.":[84],"That":[85],"will":[86,344,358,363,380],"ensure":[87],"precise":[88],"repeatable":[90],"programing":[91,190],"while":[93,189],"these":[94],"still":[97],"in":[98,320],"active":[99],"research":[100],"key":[103],"challenge":[104],"[2,5].":[105],"For":[106],"applications,":[108],"drifting":[110],"over":[111,241,300,322],"time":[112,323],"can":[113,139,207],"significantly":[114],"weaken":[115],"inference":[116],"accuracy":[117],"efficiency":[120],"[4].":[121],"In":[122,224],"our":[123],"recent":[124],"work":[125],"[6],":[126],"we":[127,227],"found":[128],"that":[129,181,246,306,357],"ZrO":[130,237,253],"2":[131,238,254],"-based":[132,239],"treated":[135],"with":[136,255,285,310,328],"hydrogen":[137],"plasma":[138],"achieve":[140],"low-power":[141],"operation":[142],"enhanced":[144],"quantized":[145],"conductance,":[146],"making":[147],"compatible":[149],"applications.":[153],"forming":[155],"energy":[156],"quantization":[158],"performance":[159],"relay":[160],"on":[161],"where":[162],"insert":[164],"the":[165,168,171,175,183,191,198,201,214,229,232,259,301,307,336,341,353,360,365,370,385,388,391,396],"H-plasma":[166,256],"thickness":[169],"capping":[172],"layer":[173],"after":[174,296],"treatment.":[176],"Several":[177],"studies":[178],"have":[179,247],"shown":[180],"selecting":[182],"optimum":[184],"pulse":[185,205,282,288,397],"width":[186],"amplitude":[188],"impact":[197],"reliability":[199,211],"devices.":[202],"Carefully":[203],"adjusted":[204],"conditions":[206],"improve":[208],"endurance":[209],"by":[212],"stabilizing":[213],"conductive":[215,337],"filament":[216,338],"reducing":[218],"thermally":[219],"driven":[220],"defect":[221],"migration":[222],"[7].":[223],"this":[225],"work,":[226],"investigate":[228],"stability":[230,389],"programmed":[233,309,327],"levels":[235],"extended":[242,302],"periods.":[243,303],"been":[248],"tested":[249],"deposited":[251],"treatment":[257],"layer,":[261],"TiN":[263],"both":[265],"top":[266],"bottom":[268],"electrodes.":[269],"were":[272,293],"exposed":[273],"train":[276],"SET":[278],"pulses":[279,312,343,372],"using":[280],"identical":[281],"amplitudes":[283],"but":[284],"varying":[286],"programming":[287,297],"widths.":[289],"Conductance":[290],"(G)":[291],"values":[292],"recorded":[294],"immediately":[295],"monitored":[299],"Results":[304],"show":[305],"shorter":[311],"(less":[313],"than":[314],"10\u03bcs)":[315],"exhibit":[316],"larger":[318],"drop":[319],"compared":[324],"those":[326],"longer":[329,342],"pulses.":[330],"This":[331],"could":[332],"strength,":[339],"since":[340],"allow":[345],"more":[346,378],"oxygen":[347],"vacancies":[348],"generated":[351],"inside":[352],"oxide":[354],"[1]":[355],"CF":[361],",which":[362],"stabilize":[364],"programed":[366,371,392],"value.":[368],"Optimizing":[369],"plays":[373],"role":[376],"experiments":[379],"performed":[382],"confirm":[384],"trend":[386],"between":[387],"value":[394],"conditions.":[398],"REFERENCES":[399],"H.-S.":[400],"P.":[401,475,480],"Wong,":[402],"H.-Y.":[403],"Lee,":[404,414],"S.":[405,441,466,468,479,505,527,553,582,585],"Yu,":[406],"Y.-S.":[407],"Chen,":[408,412,417,498,511,546,559,581],"Y.":[409,452,497,509,510,545,557,558,579,580],"Wu,":[410],"P.-S.":[411],"B.":[413,450],"F.":[415],"T.":[416,444,446,448,534],"M.-J.":[419],"Tsai,":[420],"Proc.":[421],"IEEE,":[422],"100,":[423],"1951\u20131970":[424],"(2012).":[425],"R.":[426,442,471,507,555,577],"Waser":[427],"M.":[429,438,464,515,563,590],"Aono,":[430],"Nat.":[431,459,491],"Mater.,":[432],"6,":[433],"833\u2013840":[434],"(2007).":[435],"I.":[436],"Boybat,":[437],"Le":[439],"Gallo,":[440],"Nandakumar,":[443],"Moraitis,":[445],"Parnell,":[447],"Tuma,":[449],"Rajendran,":[451],"Leblebici,":[453],"A.":[454,501,503,525,549,551,575],"Sebastian,":[455],"E.":[457,469],"Eleftheriou,":[458],"Commun.,":[460],"9,":[461],"2514":[462],"(2018).":[463,495],"Wang,":[465],"Joshi,":[467],"Savel\u2019ev,":[470],"Midya,":[472],"H.":[473,529],"Li,":[474,478],"Lin,":[476],"C.":[477,496,544],"Levitan,":[481],"V.":[482],"K.":[483],"Narayanan,":[484],"J.":[485,486,536],"Yang,":[487],"Q.":[489],"Xia,":[490],"Electron.,":[492],"1,":[493],"137\u2013145":[494],"L.":[499,547,573],"Goux,":[500,548,574],"Fantini,":[502,550,576],"Redolfi,":[504,552],"Clima,":[506,554,583],"Degraeve,":[508,556,578],"G.":[512,560,584,587],"Groeseneken,":[513,561,588],"Jurczak,":[516,564,591],"IEEE":[517,565],"Int.":[518,566],"Electron":[519,567],"Devices":[520,568],"Meeting":[521,569],"(IEDM),":[522,570],"14.2.1":[523,571],"(2014).":[524,572,596],"Zeinati,":[526],"Monta\u00f1o,":[528],"Shih,":[530],"D.":[531],"Triyoso,":[532],"Gokmen,":[535],"Vac.":[537],"Sci.":[538],"Technol.":[539],"B,":[540],"42,":[541],"063207":[542],"(2024).":[543],"Kar,":[586],"VLSI":[592],"Technology":[593],"Symposium,":[594],"1\u20132":[595]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2025-11-25T00:00:00"}