{"id":"https://openalex.org/W4415757358","doi":"https://doi.org/10.1201/9781003533535-13","title":"Future Perspectives in FETs","display_name":"Future Perspectives in FETs","publication_year":2025,"publication_date":"2025-11-01","ids":{"openalex":"https://openalex.org/W4415757358","doi":"https://doi.org/10.1201/9781003533535-13"},"language":"en","primary_location":{"id":"doi:10.1201/9781003533535-13","doi":"https://doi.org/10.1201/9781003533535-13","is_oa":false,"landing_page_url":"https://doi.org/10.1201/9781003533535-13","pdf_url":null,"source":{"id":"https://openalex.org/S4306463075","display_name":"CRC Press eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320584","host_organization_name":"CRC Press","host_organization_lineage":["https://openalex.org/P4310320584","https://openalex.org/P4310320547","https://openalex.org/P4310320449"],"host_organization_lineage_names":["CRC Press","Taylor & Francis","Informa"],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Field-Effect Transistors Technology","raw_type":"book-chapter"},"parent_works":[{"id":"https://openalex.org/W4415757370","display_name":"Field-Effect Transistors Technology: From Sustainability to Next-Generation VLSI Design","relationship":"volume"}],"lineage":["https://openalex.org/W4415757358","https://openalex.org/W4415757370"],"child_works_count":0,"type":"book-chapter","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074794307","display_name":"Angshuman Khan","orcid":"https://orcid.org/0000-0002-1298-628X","observed_orcids":["https://orcid.org/0000-0002-1298-628X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Angshuman Khan","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005383486","display_name":"Abheek Gupta","orcid":"https://orcid.org/0000-0002-9188-7908","observed_orcids":["https://orcid.org/0000-0002-9188-7908"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Abheek Gupta","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113309233","display_name":"Soumya Sen","orcid":"https://orcid.org/0000-0002-6354-5206","observed_orcids":["https://orcid.org/0000-0002-6354-5206"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Soumya Sen","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035286081","display_name":"Ashish Raman","orcid":"https://orcid.org/0000-0002-6720-373X","observed_orcids":["https://orcid.org/0000-0002-6720-373X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ashish Raman","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5100646143","display_name":"Prabhat Kumar Singh","orcid":"https://orcid.org/0000-0002-4612-547X","observed_orcids":["https://orcid.org/0000-0002-4612-547X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Prabhat Singh","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"394","last_page":"419"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.00139999995008111,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.9980000257492065},{"id":"https://openalex.org/keywords/nanowire-transistors","display_name":"nanowire transistors","score":0.9940000176429749},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.8519999980926514},{"id":"https://openalex.org/keywords/power-dissipation","display_name":"power dissipation","score":0.8529999852180481},{"id":"https://openalex.org/keywords/quantum-effects","display_name":"quantum effects","score":0.6959999799728394},{"id":"https://openalex.org/keywords/device-scaling","display_name":"device scaling","score":0.7080000042915344},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.6970000267028809},{"id":"https://openalex.org/keywords/electrostatic-control","display_name":"electrostatic control","score":0.9380000233650208}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6139000058174133},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.5429999828338623},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5296000242233276},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4611000120639801},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4609000086784363},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4440999925136566},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.43209999799728394},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4255000054836273},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.384799987077713},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.37470000982284546},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.3720000088214874},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.3684999942779541},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3646000027656555},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3578999936580658},{"id":"https://openalex.org/C2989315489","wikidata":"https://www.wikidata.org/wiki/Q2659774","display_name":"Semiconductor materials","level":3,"score":0.33340001106262207},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.3278000056743622},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3167000114917755},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3050000071525574},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.29820001125335693},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.28200000524520874},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2630999982357025},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.25679999589920044}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1201/9781003533535-13","doi":"https://doi.org/10.1201/9781003533535-13","is_oa":false,"landing_page_url":"https://doi.org/10.1201/9781003533535-13","pdf_url":null,"source":{"id":"https://openalex.org/S4306463075","display_name":"CRC Press eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320584","host_organization_name":"CRC Press","host_organization_lineage":["https://openalex.org/P4310320584","https://openalex.org/P4310320547","https://openalex.org/P4310320449"],"host_organization_lineage_names":["CRC Press","Taylor & Francis","Informa"],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Field-Effect Transistors Technology","raw_type":"book-chapter"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4393103563","https://openalex.org/W4405928256","https://openalex.org/W7117510543","https://openalex.org/W6967543865","https://openalex.org/W4414212850","https://openalex.org/W4319462069","https://openalex.org/W7154511407","https://openalex.org/W7125593636","https://openalex.org/W4408990667","https://openalex.org/W4409646122"],"abstract_inverted_index":{"The":[0],"rapid":[1],"advancement":[2],"of":[3,22,58],"semiconductor":[4,95],"technology":[5],"has":[6],"been":[7],"driven":[8],"by":[9],"continuous":[10],"innovations":[11],"in":[12],"Field-Effect":[13],"Transistor":[14],"(FET)":[15],"architectures,":[16],"which":[17],"have":[18],"enabled":[19],"the":[20,55],"scaling":[21],"devices":[23],"to":[24,48],"ever-smaller":[25],"dimensions.":[26],"However,":[27],"as":[28,39],"traditional":[29],"planar":[30],"FETs":[31,67,70],"approach":[32],"their":[33],"physical":[34],"limits,":[35],"new":[36],"challenges":[37],"such":[38],"short-channel":[40],"effects,":[41],"power":[42],"dissipation,":[43],"and":[44,72,86],"quantum":[45],"phenomena":[46],"threaten":[47],"impede":[49],"further":[50],"progress.":[51],"This":[52],"chapter":[53],"explores":[54],"future":[56],"perspectives":[57],"FET":[59],"evolution,":[60],"focusing":[61],"on":[62],"emerging":[63],"architectures":[64],"like":[65],"Vertical":[66],"(VFETs),":[68],"Nanowire":[69],"(NWFETs),":[71],"2D":[73],"material-based":[74],"FETs.":[75],"These":[76],"advanced":[77],"designs":[78],"offer":[79],"enhanced":[80],"electrostatic":[81],"control,":[82],"reduced":[83],"leakage":[84],"currents,":[85],"superior":[87],"scalability,":[88],"making":[89],"them":[90],"strong":[91],"candidates":[92],"for":[93],"next-generation":[94],"devices.":[96]},"counts_by_year":[],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2025-11-01T00:00:00"}