{"id":"https://openalex.org/W4411713601","doi":"https://doi.org/10.1021/acsaelm.5c01021","title":"Tailoring Electrical Stability of Indium Oxide Thin-Film Transistors via Solution Aging-Induced Defect Modulation","display_name":"Tailoring Electrical Stability of Indium Oxide Thin-Film Transistors via Solution Aging-Induced Defect Modulation","publication_year":2025,"publication_date":"2025-06-27","ids":{"openalex":"https://openalex.org/W4411713601","doi":"https://doi.org/10.1021/acsaelm.5c01021"},"language":"en","primary_location":{"id":"doi:10.1021/acsaelm.5c01021","doi":"https://doi.org/10.1021/acsaelm.5c01021","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsaelm.5c01021","pdf_url":null,"source":{"id":"https://openalex.org/S4210217399","display_name":"ACS Applied Electronic Materials","issn_l":"2637-6113","issn":["2637-6113"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Electronic Materials","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W4411713601"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100665650","display_name":"Juwon Kim","orcid":"https://orcid.org/0009-0006-6972-4084","observed_orcids":["https://orcid.org/0009-0006-6972-4084"]},"institutions":[{"id":"https://openalex.org/I161024014","display_name":"Kwangwoon University","ror":"https://ror.org/02e9zc863","country_code":"KR","type":"education","lineage":["https://openalex.org/I161024014"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Juwon Kim","raw_affiliation_strings":["Department of Electronic Engineering, Kwangwoon University, 20, Gwangun-ro,\rNowon-gu, Seoul 01897, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Kwangwoon University, 20, Gwangun-ro,\rNowon-gu, Seoul 01897, Republic of Korea","institution_ids":["https://openalex.org/I161024014"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061641651","display_name":"Seung-Jin Lee","orcid":"https://orcid.org/0009-0009-8983-5197","observed_orcids":["https://orcid.org/0009-0009-8983-5197"]},"institutions":[{"id":"https://openalex.org/I161024014","display_name":"Kwangwoon University","ror":"https://ror.org/02e9zc863","country_code":"KR","type":"education","lineage":["https://openalex.org/I161024014"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung-Jin Lee","raw_affiliation_strings":["Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Republic of Korea","institution_ids":["https://openalex.org/I161024014"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026616959","display_name":"Won-Ju Cho","orcid":"https://orcid.org/0000-0002-3932-4892","observed_orcids":["https://orcid.org/0000-0002-3932-4892","https://orcid.org/0000-0003-3850-6261"]},"institutions":[{"id":"https://openalex.org/I161024014","display_name":"Kwangwoon University","ror":"https://ror.org/02e9zc863","country_code":"KR","type":"education","lineage":["https://openalex.org/I161024014"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Won-Ju Cho","raw_affiliation_strings":["Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Republic of Korea","institution_ids":["https://openalex.org/I161024014"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009749427","display_name":"Hamin Park","orcid":"https://orcid.org/0000-0002-5354-3573","observed_orcids":["https://orcid.org/0000-0002-5354-3573"]},"institutions":[{"id":"https://openalex.org/I161024014","display_name":"Kwangwoon University","ror":"https://ror.org/02e9zc863","country_code":"KR","type":"education","lineage":["https://openalex.org/I161024014"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hamin Park","raw_affiliation_strings":["Department of Electronic Engineering, Kwangwoon University, 20, Gwangun-ro,\rNowon-gu, Seoul 01897, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-5354-3573","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Kwangwoon University, 20, Gwangun-ro,\rNowon-gu, Seoul 01897, Republic of Korea","institution_ids":["https://openalex.org/I161024014"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5009749427"],"corresponding_institution_ids":["https://openalex.org/I161024014"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":1.3698,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.78293393,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"7","issue":"13","first_page":"6187","last_page":"6195"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-oxide","display_name":"indium oxide","score":0.8870000243186951},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9900000095367432},{"id":"https://openalex.org/keywords/solution-aging","display_name":"solution aging","score":0.9660000205039978},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.6629999876022339},{"id":"https://openalex.org/keywords/hydroxyl-defects","display_name":"hydroxyl defects","score":0.8109999895095825},{"id":"https://openalex.org/keywords/interface-defects","display_name":"interface defects","score":0.43700000643730164},{"id":"https://openalex.org/keywords/charge-transport-mechanism","display_name":"charge transport mechanism","score":0.722000002861023},{"id":"https://openalex.org/keywords/bias-stress","display_name":"bias stress","score":0.6919999718666077},{"id":"https://openalex.org/keywords/electron-trapping","display_name":"electron trapping","score":0.8399999737739563},{"id":"https://openalex.org/keywords/persistent-photoconductivity","display_name":"persistent photoconductivity","score":0.8709999918937683},{"id":"https://openalex.org/keywords/photoresponse","display_name":"photoresponse","score":0.6679999828338623},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.6399999856948853},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.890999972820282},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.9810000061988831},{"id":"https://openalex.org/keywords/device-stability","display_name":"device stability","score":0.6029999852180481},{"id":"https://openalex.org/keywords/oxide-semiconductors","display_name":"oxide semiconductors","score":0.9240000247955322}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8001514673233032},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.7720303535461426},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.7306475639343262},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6242671012878418},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.5787288546562195},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5452578067779541},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.47774046659469604},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4546317756175995},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3005242347717285},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1963914930820465},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1806531548500061},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.10532671213150024},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06441199779510498},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05077168345451355},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.04211607575416565},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1021/acsaelm.5c01021","doi":"https://doi.org/10.1021/acsaelm.5c01021","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsaelm.5c01021","pdf_url":null,"source":{"id":"https://openalex.org/S4210217399","display_name":"ACS Applied Electronic Materials","issn_l":"2637-6113","issn":["2637-6113"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2297553284","display_name":null,"funder_award_id":"RS\u20102024\u201000335269","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G379530431","display_name":null,"funder_award_id":"RS2018NR031063","funder_id":"https://openalex.org/F4320321408","funder_display_name":"Ministry of Education"},{"id":"https://openalex.org/G6668848437","display_name":null,"funder_award_id":"RS-2023-00237548 (23015-30FC, 1415187530)","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"}],"funders":[{"id":"https://openalex.org/F4320321374","display_name":"Kwangwoon University","ror":"https://ror.org/02e9zc863"},{"id":"https://openalex.org/F4320321408","display_name":"Ministry of Education","ror":"https://ror.org/01p262204"},{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1605673199","https://openalex.org/W1987958219","https://openalex.org/W1994277498","https://openalex.org/W1995940513","https://openalex.org/W1998760812","https://openalex.org/W1999589524","https://openalex.org/W2000761836","https://openalex.org/W2010540469","https://openalex.org/W2126214333","https://openalex.org/W2157071878","https://openalex.org/W2288643850","https://openalex.org/W2509221667","https://openalex.org/W2516390696","https://openalex.org/W2587762804","https://openalex.org/W2592957868","https://openalex.org/W2758300252","https://openalex.org/W2772612848","https://openalex.org/W2899233764","https://openalex.org/W2918457644","https://openalex.org/W2981056051","https://openalex.org/W2991561085","https://openalex.org/W3007106452","https://openalex.org/W3138415731","https://openalex.org/W3161783227","https://openalex.org/W4210296161","https://openalex.org/W4210830898","https://openalex.org/W4221109394","https://openalex.org/W4281892612","https://openalex.org/W4288032938","https://openalex.org/W4387010943","https://openalex.org/W4391759508","https://openalex.org/W4392104828","https://openalex.org/W4393258990","https://openalex.org/W4396845213","https://openalex.org/W4399882268","https://openalex.org/W4403799432","https://openalex.org/W4404095864"],"related_works":["https://openalex.org/W2805583614","https://openalex.org/W3199221629","https://openalex.org/W4391759508","https://openalex.org/W2138503446","https://openalex.org/W7133224113","https://openalex.org/W4400487006","https://openalex.org/W2902982653","https://openalex.org/W2636711016","https://openalex.org/W2027061740","https://openalex.org/W2567482173"],"abstract_inverted_index":{"The":[0,104],"stability":[1],"and":[2,24,46,58,72,93,122,157,174,192],"performance":[3],"of":[4,34,49,80,106,133,146,154,185],"solution-processed":[5],"indium":[6],"oxide":[7],"(InO)":[8],"thin-film":[9],"transistors":[10],"(TFTs)":[11],"are":[12],"critically":[13],"influenced":[14],"by":[15],"defect":[16,134],"formation":[17,145],"at":[18],"the":[19,22,25,32,44,67,107,114,130,144,152,182],"interface":[20],"between":[21,170],"channel":[23],"gate":[26],"dielectric.":[27],"This":[28],"study":[29],"comprehensively":[30],"investigated":[31],"impact":[33],"solution":[35,81,171],"aging":[36,82,120,125,142,172],"time":[37,173],"(0":[38],"min":[39],"to":[40],"3":[41],"h)":[42],"on":[43,55,124],"electrical":[45,162],"optoelectronic":[47,193],"characteristics":[48],"InO":[50,108,186],"TFTs,":[51],"with":[52],"an":[53],"emphasis":[54],"defect-state":[56],"modulation":[57],"charge-transport":[59],"mechanisms.":[60],"Changes":[61],"in":[62],"key":[63],"TFT":[64],"parameters,":[65],"including":[66],"threshold":[68],"voltage,":[69],"subthreshold":[70],"swing,":[71],"field-effect":[73],"mobility,":[74],"were":[75],"analyzed":[76],"as":[77],"a":[78,111,167],"function":[79],"duration.":[83],"Bias-stress":[84],"measurements":[85],"confirm":[86,166],"that":[87,140],"positive":[88],"bias":[89,95],"stress-induced":[90],"electron":[91],"trapping":[92],"negative":[94],"stress-driven":[96],"oxygen":[97,155],"vacancy":[98],"ionization":[99],"significantly":[100],"affect":[101],"device":[102,175],"stability.":[103,163],"photoresponse":[105],"films":[109,187],"exhibits":[110],"nonmonotonic":[112],"trend;":[113],"persistent":[115],"photoconductivity":[116],"increases":[117],"for":[118,188],"short":[119],"times":[121],"diminishes":[123],"beyond":[126],"1":[127],"h,":[128],"underscoring":[129],"dynamic":[131],"evolution":[132],"states.":[135],"X-ray":[136],"photoelectron":[137],"spectroscopy":[138],"indicates":[139],"prolonged":[141],"promotes":[143],"stable":[147],"In\u2013O":[148],"bonds":[149],"while":[150],"reducing":[151],"density":[153],"vacancies":[156],"hydroxyl-related":[158],"defects,":[159],"thereby":[160],"improving":[161],"These":[164],"findings":[165],"direct":[168],"correlation":[169],"reliability,":[176],"offering":[177],"valuable":[178],"insights":[179],"into":[180],"optimizing":[181],"processing":[183],"conditions":[184],"next-generation":[189],"oxide-semiconductor":[190],"electronics":[191],"applications.":[194]},"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2025-10-10T00:00:00"}