{"id":"https://openalex.org/W4409433243","doi":"https://doi.org/10.1007/s44291-025-00056-z","title":"Design and circuit applications of PTnMOSFET devices from planar to gate-all-around structures","display_name":"Design and circuit applications of PTnMOSFET devices from planar to gate-all-around structures","publication_year":2025,"publication_date":"2025-04-14","ids":{"openalex":"https://openalex.org/W4409433243","doi":"https://doi.org/10.1007/s44291-025-00056-z"},"language":"en","primary_location":{"id":"doi:10.1007/s44291-025-00056-z","doi":"https://doi.org/10.1007/s44291-025-00056-z","is_oa":true,"landing_page_url":"https://doi.org/10.1007/s44291-025-00056-z","pdf_url":"https://link.springer.com/content/pdf/10.1007/s44291-025-00056-z.pdf","source":{"id":"https://openalex.org/S5407036633","display_name":"Discover Electronics","issn_l":"2948-1600","issn":["2948-1600"],"is_oa":true,"is_in_doaj":true,"is_core":false,"listed_in":["doaj"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Discover Electronics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://link.springer.com/content/pdf/10.1007/s44291-025-00056-z.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045184588","display_name":"Jyi-Tsong Lin","orcid":"https://orcid.org/0000-0002-0321-5424","observed_orcids":["https://orcid.org/0000-0002-0321-5424"]},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Jyi-Tsong Lin","raw_affiliation_strings":["National Sun Yat-Sen University, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Sun Yat-Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"last","author":{"id":null,"display_name":"Yuan-Yu Chuang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yuan-Yu Chuang","raw_affiliation_strings":["National Sun Yat-Sen University, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Sun Yat-Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5045184588"],"corresponding_institution_ids":["https://openalex.org/I142974352"],"apc_list":{"value":0,"currency":"USD","value_usd":0},"apc_paid":null,"fwci":0.4619,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53744805,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"2","issue":"1","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.0008999999845400453,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-all-around-transistors","display_name":"gate-all-around transistors","score":0.8270000219345093},{"id":"https://openalex.org/keywords/finfet","display_name":"FinFET","score":0.9390000104904175},{"id":"https://openalex.org/keywords/source-drain-doping","display_name":"source/drain doping","score":0.765999972820282},{"id":"https://openalex.org/keywords/current-mismatch","display_name":"current mismatch","score":0.699999988079071},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.7870000004768372},{"id":"https://openalex.org/keywords/low-voltage-circuits","display_name":"low-voltage circuits","score":0.4830000102519989},{"id":"https://openalex.org/keywords/nanosheet-transistors","display_name":"nanosheet transistors","score":0.6129999756813049}],"concepts":[{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.7566379308700562},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5199143290519714},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4924531877040863},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3707726001739502},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3046734929084778},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26802682876586914},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.07760888338088989}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1007/s44291-025-00056-z","doi":"https://doi.org/10.1007/s44291-025-00056-z","is_oa":true,"landing_page_url":"https://doi.org/10.1007/s44291-025-00056-z","pdf_url":"https://link.springer.com/content/pdf/10.1007/s44291-025-00056-z.pdf","source":{"id":"https://openalex.org/S5407036633","display_name":"Discover Electronics","issn_l":"2948-1600","issn":["2948-1600"],"is_oa":true,"is_in_doaj":true,"is_core":false,"listed_in":["doaj"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Discover Electronics","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:b8320c20e46b4d8dbd694011816db8c5","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/b8320c20e46b4d8dbd694011816db8c5","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Discover Electronics, Vol 2, Iss 1, Pp 1-20 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1007/s44291-025-00056-z","doi":"https://doi.org/10.1007/s44291-025-00056-z","is_oa":true,"landing_page_url":"https://doi.org/10.1007/s44291-025-00056-z","pdf_url":"https://link.springer.com/content/pdf/10.1007/s44291-025-00056-z.pdf","source":{"id":"https://openalex.org/S5407036633","display_name":"Discover Electronics","issn_l":"2948-1600","issn":["2948-1600"],"is_oa":true,"is_in_doaj":true,"is_core":false,"listed_in":["doaj"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Discover Electronics","raw_type":"journal-article"},"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.49000000953674316}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4409433243.pdf","grobid_xml":"https://content.openalex.org/works/W4409433243.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1974159394","https://openalex.org/W1980639873","https://openalex.org/W1985834758","https://openalex.org/W1985921646","https://openalex.org/W2052519425","https://openalex.org/W2055309078","https://openalex.org/W2083759153","https://openalex.org/W2152011061","https://openalex.org/W2169885784","https://openalex.org/W2744406216","https://openalex.org/W2785517166","https://openalex.org/W2899004836","https://openalex.org/W3039683194","https://openalex.org/W3040051264","https://openalex.org/W3123193375","https://openalex.org/W3163597492","https://openalex.org/W3174195390","https://openalex.org/W4205516266","https://openalex.org/W4298132033","https://openalex.org/W4312992159","https://openalex.org/W4317793552","https://openalex.org/W4317793559","https://openalex.org/W4366259362","https://openalex.org/W4379033786","https://openalex.org/W4384661315","https://openalex.org/W4385215863","https://openalex.org/W4385239920","https://openalex.org/W4390485912","https://openalex.org/W4391622610","https://openalex.org/W4400386354"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2899084033","https://openalex.org/W2748952813","https://openalex.org/W4404995717","https://openalex.org/W2016187641","https://openalex.org/W4404725684","https://openalex.org/W4246450666","https://openalex.org/W4388998267","https://openalex.org/W4409278740","https://openalex.org/W2898370298"],"abstract_inverted_index":{"In":[0,118],"this":[1],"work,":[2],"we":[3],"propose":[4],"a":[5,10,65,148,153,218,226],"punch-through":[6],"nMOSFET":[7],"(PTnMOSFET)":[8],"as":[9],"practical":[11,271],"alternative":[12],"to":[13,104,115,265],"pMOSFETs":[14,45],"by":[15,27],"adjusting":[16],"the":[17,29,61,121,130,197,250,253],"source/drain":[18],"doping":[19],"concentrations.":[20],"This":[21],"PTnMOSFET":[22,63],"design":[23,67],"simplifies":[24],"device":[25],"fabrication":[26],"eliminating":[28],"need":[30],"for":[31,170,182],"sizing":[32],"adjustments":[33],"or":[34],"stress":[35],"engineering":[36],"techniques":[37],"while":[38],"effectively":[39],"addressing":[40],"current":[41,107],"mismatch":[42],"issues":[43],"between":[44],"and":[46,55,80,99,108,158,179,205,225,243,270],"nMOSFETs.":[47],"Simulations":[48],"of":[49,77,88,96,207,222,231,252],"Planar,":[50],"Fin":[51],"Field-Effect":[52],"Transistor":[53],"(FinFET),":[54],"Gate-All-Around":[56],"(GAA)":[57],"PTnMOSFETs":[58],"reveal":[59],"that":[60,195],"GAA":[62,122,133,144,210],"achieves":[64,217],"wide":[66],"window,":[68],"an":[69,81],"average":[70],"subthreshold":[71],"swing":[72],"(":[73,92,164,175,187,201],"SS":[74],"avg":[75],")":[76,95,178,204],"74":[78],"mV/dec,":[79],"I":[82,85],"ON(PTnMOSFET)":[83],"/":[84,138],"ON(nMOSFET)":[86],"ratio":[87],"0.89.":[89],"Gate":[90],"lengths":[91],"L":[93,189],"G":[94],"30":[97],"nm":[98,101],"14":[100],"were":[102],"selected":[103],"align":[105],"with":[106,167],"emerging":[109],"semiconductor":[110],"technology":[111],"nodes,":[112],"ensuring":[113],"relevance":[114],"state-of-the-art":[116,238],"devices.":[117],"circuit":[119,125,134,146],"applications,":[120],"single-carrier":[123],"(SC)":[124],"exhibits":[126],"significant":[127],"improvements":[128],"over":[129],"conventional":[131],"(Conv.)":[132],"(with":[135],"W":[136,139],"p":[137],"n":[140],"=":[141],"1).":[142],"The":[143],"SC":[145,211],"demonstrates":[147],"14.9%":[149],"shorter":[150],"delay":[151],"time,":[152],"5.5%":[154],"higher":[155],"voltage":[156,200,221],"gain,":[157],"more":[159],"symmetric":[160],"signal":[161,171,183,228],"noise":[162,172,184,229],"margins":[163],"NM":[165,176,188],"),":[166],"117":[168],"mV":[169,181,233],"margin":[173,185,230],"high":[174],"H":[177],"118":[180],"low":[186],").":[190],"Benchmarking":[191],"results":[192,248],"further":[193,256],"suggest":[194],"under":[196,259],"same":[198],"supply":[199],"V":[202,224],"DD":[203],"number":[206],"transistors,":[208],"our":[209],"Static":[212],"Random":[213],"Access":[214],"Memory":[215],"(SRAM)":[216],"read":[219,235],"failure":[220],"0.145":[223],"static":[227],"56":[232],"in":[234],"mode,":[236],"surpassing":[237],"studies":[239],"on":[240],"stacked":[241],"nanosheet":[242],"cFET":[244],"counterparts.":[245],"While":[246],"these":[247],"highlight":[249],"strengths":[251],"proposed":[254],"design,":[255],"experimental":[257],"validation":[258],"diverse":[260],"operating":[261],"conditions":[262],"is":[263],"essential":[264],"fully":[266],"assess":[267],"its":[268],"robustness":[269],"applicability.":[272]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1}],"updated_date":"2026-09-11T09:22:31.653822","created_date":"2025-10-10T00:00:00"}