{"id":"https://openalex.org/W4406460892","doi":"https://doi.org/10.1109/icsict62049.2024.10831274","title":"Reduction of Specific Contact Resistivity by Employing Pre-Amorphization Implantation and In-Situ Steam Generation Oxidation","display_name":"Reduction of Specific Contact Resistivity by Employing Pre-Amorphization Implantation and In-Situ Steam Generation Oxidation","publication_year":2024,"publication_date":"2024-10-22","ids":{"openalex":"https://openalex.org/W4406460892","doi":"https://doi.org/10.1109/icsict62049.2024.10831274"},"language":"en","primary_location":{"id":"doi:10.1109/icsict62049.2024.10831274","doi":"https://doi.org/10.1109/icsict62049.2024.10831274","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsict62049.2024.10831274","pdf_url":null,"source":{"id":"https://openalex.org/S4306418723","display_name":"IEEE International Conference on Solid-State and Integrated Circuit Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100353154","display_name":"Chang Liu","orcid":"https://orcid.org/0000-0001-6548-3339","observed_orcids":["https://orcid.org/0000-0001-6548-3339"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chang Liu","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Xu Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xu Chen","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101465656","display_name":"Jinbiao Liu","orcid":"https://orcid.org/0000-0002-9051-0121","observed_orcids":["https://orcid.org/0000-0002-9051-0121"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinbiao Liu","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009289416","display_name":"Yanping He","orcid":"https://orcid.org/0009-0004-8912-6933","observed_orcids":["https://orcid.org/0009-0004-8912-6933"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanping He","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066207655","display_name":"Wenjuan Xiong","orcid":"https://orcid.org/0000-0003-0535-6156","observed_orcids":["https://orcid.org/0000-0003-0535-6156"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenjuan Xiong","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017178573","display_name":"Weibing Liu","orcid":"https://orcid.org/0000-0003-4885-1675","observed_orcids":["https://orcid.org/0000-0003-4885-1675"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weibing Liu","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060354491","display_name":"Mingshan Liu","orcid":"https://orcid.org/0000-0002-0259-7248","observed_orcids":["https://orcid.org/0000-0002-0259-7248","https://orcid.org/0009-0001-6803-6494"]},"institutions":[{"id":"https://openalex.org/I2250955327","display_name":"Huawei Technologies (China)","ror":"https://ror.org/00cmhce21","country_code":"CN","type":"company","lineage":["https://openalex.org/I2250955327"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mingshan Liu","raw_affiliation_strings":["Huawei Technologies Company limited,Shenzhen,China,518100"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Huawei Technologies Company limited,Shenzhen,China,518100","institution_ids":["https://openalex.org/I2250955327"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068582966","display_name":"Zhe Liu","orcid":"https://orcid.org/0000-0002-8300-1855","observed_orcids":["https://orcid.org/0000-0002-8300-1855"]},"institutions":[{"id":"https://openalex.org/I2250955327","display_name":"Huawei Technologies (China)","ror":"https://ror.org/00cmhce21","country_code":"CN","type":"company","lineage":["https://openalex.org/I2250955327"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhe Liu","raw_affiliation_strings":["Huawei Technologies Company limited,Shenzhen,China,518100"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Huawei Technologies Company limited,Shenzhen,China,518100","institution_ids":["https://openalex.org/I2250955327"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Yaoqi Dong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250955327","display_name":"Huawei Technologies (China)","ror":"https://ror.org/00cmhce21","country_code":"CN","type":"company","lineage":["https://openalex.org/I2250955327"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yaoqi Dong","raw_affiliation_strings":["Huawei Technologies Company limited,Shenzhen,China,518100"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Huawei Technologies Company limited,Shenzhen,China,518100","institution_ids":["https://openalex.org/I2250955327"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063018829","display_name":"Jeffrey Xu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I2250955327","display_name":"Huawei Technologies (China)","ror":"https://ror.org/00cmhce21","country_code":"CN","type":"company","lineage":["https://openalex.org/I2250955327"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jeffrey Xu","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","Huawei Technologies Company limited,Shenzhen,China,518100"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]},{"raw_affiliation_string":"Huawei Technologies Company limited,Shenzhen,China,518100","institution_ids":["https://openalex.org/I2250955327"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078978201","display_name":"Jing Xu","orcid":"https://orcid.org/0000-0003-0062-5724","observed_orcids":["https://orcid.org/0000-0003-0062-5724"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I2250955327","display_name":"Huawei Technologies (China)","ror":"https://ror.org/00cmhce21","country_code":"CN","type":"company","lineage":["https://openalex.org/I2250955327"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jing Xu","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","Huawei Technologies Company limited,Shenzhen,China,518100"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]},{"raw_affiliation_string":"Huawei Technologies Company limited,Shenzhen,China,518100","institution_ids":["https://openalex.org/I2250955327"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100749903","display_name":"Jun Luo","orcid":"https://orcid.org/0000-0002-5122-6806","observed_orcids":["https://orcid.org/0000-0002-5122-6806","https://orcid.org/0000-0002-7036-5158"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Luo","raw_affiliation_strings":["Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Key Laboratory of Fabrication Technologies for Integrated Circuits,Beijing,100029","institution_ids":["https://openalex.org/I19820366"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.50961538,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8550000190734863,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8550000190734863,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.09189999848604202,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.04439999908208847,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/specific-contact-resistivity","display_name":"specific contact resistance","score":0.9779999852180481},{"id":"https://openalex.org/keywords/source-drain-contacts","display_name":"source/drain contacts","score":0.7649999856948853},{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.847000002861023},{"id":"https://openalex.org/keywords/germanium-ion-implantation","display_name":"germanium implantation","score":0.9169999957084656},{"id":"https://openalex.org/keywords/arsenic-implantation","display_name":"arsenic implantation","score":0.9990000128746033},{"id":"https://openalex.org/keywords/phosphorus-ion-implantation","display_name":"phosphorus implantation","score":0.9549999833106995},{"id":"https://openalex.org/keywords/impurity-segregation","display_name":"impurity segregation","score":0.8309999704360962},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.5529999732971191},{"id":"https://openalex.org/keywords/si-cmos","display_name":"Si CMOS","score":0.8069999814033508}],"concepts":[{"id":"https://openalex.org/C2777822432","wikidata":"https://www.wikidata.org/wiki/Q216681","display_name":"In situ","level":2,"score":0.7702689170837402},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7027446031570435},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.6884735226631165},{"id":"https://openalex.org/C111335779","wikidata":"https://www.wikidata.org/wiki/Q3454686","display_name":"Reduction (mathematics)","level":2,"score":0.594816267490387},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.33555132150650024},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21543791890144348},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1775679886341095},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08291667699813843},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icsict62049.2024.10831274","doi":"https://doi.org/10.1109/icsict62049.2024.10831274","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsict62049.2024.10831274","pdf_url":null,"source":{"id":"https://openalex.org/S4306418723","display_name":"IEEE International Conference on Solid-State and Integrated Circuit Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W2026729979","https://openalex.org/W2063240494","https://openalex.org/W2105624516","https://openalex.org/W2164337833","https://openalex.org/W2292802149","https://openalex.org/W2545386585","https://openalex.org/W2588781650","https://openalex.org/W2888088912","https://openalex.org/W2975115906","https://openalex.org/W3010454590","https://openalex.org/W3130261954","https://openalex.org/W3163390080","https://openalex.org/W4225311931","https://openalex.org/W4309650897"],"related_works":["https://openalex.org/W3163390080","https://openalex.org/W2545386585","https://openalex.org/W3010454590","https://openalex.org/W2292802149","https://openalex.org/W2969923247","https://openalex.org/W3130261954","https://openalex.org/W4381745419","https://openalex.org/W2969570303","https://openalex.org/W2744027980","https://openalex.org/W7154701734"],"abstract_inverted_index":{"Specific":[0],"contact":[1],"resistivity$(\\boldsymbol{\\rho_{c}})$at":[2],"the":[3,25,37,46,69,84,102,118,123,130,139],"transistor":[4],"source/drain":[5],"has":[6],"become":[7],"a":[8,96],"bottleneck":[9],"for":[10],"further":[11],"improvement":[12],"of":[13,19,27,36,49,105,125],"modern":[14],"Si":[15],"CMOS.":[16],"The":[17,61],"increase":[18],"surface":[20],"dopant":[21],"concentration":[22],"(Ns)":[23],"and":[24,53,76,121,127,135],"reduction":[26],"Schottky":[28],"barrier":[29],"height":[30],"(SBHs)":[31],"are":[32],"considered":[33],"as":[34],"one":[35],"most":[38],"effective":[39],"approaches":[40],"to":[41,143],"reduce$\\boldsymbol{\\rho_{c}}$.":[42,144],"In":[43,115],"this":[44],"paper,":[45],"combining":[47],"effect":[48],"pre-amorphization":[50],"implantation":[51,86,103],"(PAI)":[52],"in-situ":[54],"steam":[55],"generation":[56],"(ISSG)":[57],"oxidation":[58,78],"on$\\boldsymbol{\\rho_{c}}$is":[59],"studied.":[60],"results":[62],"show":[63],"that$\\boldsymbol{\\rho_{c}}$can":[64],"be":[65],"significantly":[66],"reduced":[67],"by":[68,132],"germanium":[70],"(Ge)":[71],"or":[72],"arsenic":[73],"(As)":[74],"PAI":[75,120,134],"ISSG":[77,92,109,136],"after":[79],"phosphorus":[80],"(P)":[81],"implantation.":[82],"When":[83,101],"Ge":[85,119],"dose":[87,104],"is":[88,93,110],"set":[89],"at$1\\times":[90],"10^{15}\\text{cm}^{-2}$and":[91],"performed,":[94,111],"the$\\boldsymbol{\\rho_{c}}$achieves":[95],"value":[97],"of$2.82\\times":[98],"10^{-8}\\Omega\\cdot":[99,113],"\\text{cm}^{2}$.":[100,114],"As":[106,128,133],"is$6\\times":[107],"10^{14}\\text{cm}^{-2}$and":[108],"the$\\boldsymbol{\\rho_{c}}$reaches$1.65\\times":[112],"comparison":[116],"with":[117],"ISSG,":[122],"segregation":[124],"P":[126],"at":[129],"interface":[131],"processes":[137],"provide":[138],"higher":[140],"carrier":[141],"concentrations":[142]},"counts_by_year":[],"updated_date":"2026-10-26T11:51:55.731654","created_date":"2025-01-17T00:00:00"}