{"id":"https://openalex.org/W4406103340","doi":"https://doi.org/10.1088/1674-4926/24060009","title":"Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs","display_name":"Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs","publication_year":2024,"publication_date":"2024-12-01","ids":{"openalex":"https://openalex.org/W4406103340","doi":"https://doi.org/10.1088/1674-4926/24060009"},"language":"en","primary_location":{"id":"doi:10.1088/1674-4926/24060009","doi":"https://doi.org/10.1088/1674-4926/24060009","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/24060009","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101553200","display_name":"Yi Huang","orcid":"https://orcid.org/0000-0002-2924-2324","observed_orcids":["https://orcid.org/0000-0002-2924-2324"]},"institutions":[{"id":"https://openalex.org/I10535382","display_name":"Chongqing University of Posts and Telecommunications","ror":"https://ror.org/03dgaqz26","country_code":"CN","type":"education","lineage":["https://openalex.org/I10535382"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi Huang","raw_affiliation_strings":["School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China","institution_ids":["https://openalex.org/I10535382"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Qiurui Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I10535382","display_name":"Chongqing University of Posts and Telecommunications","ror":"https://ror.org/03dgaqz26","country_code":"CN","type":"education","lineage":["https://openalex.org/I10535382"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qiurui Chen","raw_affiliation_strings":["School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China","institution_ids":["https://openalex.org/I10535382"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101057739","display_name":"Rongyao Ma","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210087349","display_name":"China Resources (China)","ror":"https://ror.org/0026yhs27","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087349"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rongyao Ma","raw_affiliation_strings":["China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China","institution_ids":["https://openalex.org/I4210087349"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kaifeng Tang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210087349","display_name":"China Resources (China)","ror":"https://ror.org/0026yhs27","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087349"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaifeng Tang","raw_affiliation_strings":["China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China","institution_ids":["https://openalex.org/I4210087349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100341267","display_name":"Qi Wang","orcid":"https://orcid.org/0000-0002-1741-2250","observed_orcids":["https://orcid.org/0000-0002-1741-2250"]},"institutions":[{"id":"https://openalex.org/I10535382","display_name":"Chongqing University of Posts and Telecommunications","ror":"https://ror.org/03dgaqz26","country_code":"CN","type":"education","lineage":["https://openalex.org/I10535382"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Wang","raw_affiliation_strings":["School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China","institution_ids":["https://openalex.org/I10535382"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027687491","display_name":"Hongsheng Zhang","orcid":"https://orcid.org/0000-0003-1636-8208","observed_orcids":["https://orcid.org/0000-0003-1636-8208"]},"institutions":[{"id":"https://openalex.org/I10535382","display_name":"Chongqing University of Posts and Telecommunications","ror":"https://ror.org/03dgaqz26","country_code":"CN","type":"education","lineage":["https://openalex.org/I10535382"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongsheng Zhang","raw_affiliation_strings":["School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China","institution_ids":["https://openalex.org/I10535382"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Ji Ding","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210087349","display_name":"China Resources (China)","ror":"https://ror.org/0026yhs27","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087349"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ji Ding","raw_affiliation_strings":["China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China","institution_ids":["https://openalex.org/I4210087349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017314153","display_name":"Dandan Xu","orcid":"https://orcid.org/0000-0003-0594-760X","observed_orcids":["https://orcid.org/0000-0003-0594-760X"]},"institutions":[{"id":"https://openalex.org/I4210087349","display_name":"China Resources (China)","ror":"https://ror.org/0026yhs27","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087349"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dandan Xu","raw_affiliation_strings":["China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China","institution_ids":["https://openalex.org/I4210087349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011202806","display_name":"Sheng Gao","orcid":"https://orcid.org/0000-0002-0151-2177","observed_orcids":["https://orcid.org/0000-0002-0151-2177"]},"institutions":[{"id":"https://openalex.org/I10535382","display_name":"Chongqing University of Posts and Telecommunications","ror":"https://ror.org/03dgaqz26","country_code":"CN","type":"education","lineage":["https://openalex.org/I10535382"]},{"id":"https://openalex.org/I4210087349","display_name":"China Resources (China)","ror":"https://ror.org/0026yhs27","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087349"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Sheng Gao","raw_affiliation_strings":["China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China","School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China","institution_ids":["https://openalex.org/I4210087349"]},{"raw_affiliation_string":"School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China","institution_ids":["https://openalex.org/I10535382"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055388927","display_name":"Genquan Han","orcid":"https://orcid.org/0000-0001-5140-4150","observed_orcids":["https://orcid.org/0000-0001-5140-4150"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Genquan Han","raw_affiliation_strings":["School of microelectronics, Xidian University, Xi'an 710126, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of microelectronics, Xidian University, Xi'an 710126, China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5011202806"],"corresponding_institution_ids":["https://openalex.org/I10535382","https://openalex.org/I4210087349"],"apc_list":{"value":2450,"currency":"USD","value_usd":2450},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13530532,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"45","issue":"12","first_page":"122501","last_page":"122501"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.7960000038146973},{"id":"https://openalex.org/keywords/short-circuit-faults","display_name":"short-circuit faults","score":0.9649999737739563},{"id":"https://openalex.org/keywords/thermal-expansion-mismatch","display_name":"thermal expansion mismatch","score":0.7080000042915344},{"id":"https://openalex.org/keywords/liquid-metal-infiltration","display_name":"liquid metal infiltration","score":0.9200000166893005},{"id":"https://openalex.org/keywords/gate-oxide-degradation","display_name":"gate oxide degradation","score":0.8240000009536743},{"id":"https://openalex.org/keywords/thermal-runaway","display_name":"thermal runaway","score":0.9860000014305115},{"id":"https://openalex.org/keywords/power-semiconductor-reliability","display_name":"power semiconductor reliability","score":0.6100000143051147}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6935568451881409},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6301345229148865},{"id":"https://openalex.org/C89611455","wikidata":"https://www.wikidata.org/wiki/Q6804646","display_name":"Mechanism (biology)","level":2,"score":0.624609112739563},{"id":"https://openalex.org/C3018344627","wikidata":"https://www.wikidata.org/wiki/Q1925224","display_name":"Failure mechanism","level":2,"score":0.5201119184494019},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5115095376968384},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5073031783103943},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28713259100914},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.21936950087547302},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1616094708442688},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1283046007156372},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12026464939117432},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09903019666671753},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07396993041038513},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/1674-4926/24060009","doi":"https://doi.org/10.1088/1674-4926/24060009","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/24060009","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.4943999946117401,"display_name":"Industry, innovation and infrastructure"}],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1532260077","https://openalex.org/W1927986593","https://openalex.org/W1970849593","https://openalex.org/W1988927699","https://openalex.org/W2059284919","https://openalex.org/W2073212994","https://openalex.org/W2077760225","https://openalex.org/W2145880618","https://openalex.org/W2529598461","https://openalex.org/W2729586885","https://openalex.org/W2810409403","https://openalex.org/W2945802234","https://openalex.org/W2974770694","https://openalex.org/W3000332641","https://openalex.org/W3109555006","https://openalex.org/W3120941550"],"related_works":["https://openalex.org/W2382997850","https://openalex.org/W2390968135","https://openalex.org/W2965295431","https://openalex.org/W2010009304","https://openalex.org/W2382213751","https://openalex.org/W2351750670","https://openalex.org/W1597848696","https://openalex.org/W2354715126","https://openalex.org/W2388563748","https://openalex.org/W2375179084"],"abstract_inverted_index":{"Abstract":[0],"This":[1],"paper":[2,128],"presents":[3],"a":[4,88],"comprehensive":[5],"analysis":[6],"of":[7,82,111,136,146],"the":[8,62,67,71,80,95,103,109,112,117,133,144,148],"short-circuit":[9,39,51,134],"failure":[10,96],"mechanisms":[11],"in":[12,77,87],"commercial":[13],"1.2":[14],"kV":[15],"planar":[16],"silicon":[17],"carbide":[18],"(SiC)":[19],"metal\u2013oxide\u2013semiconductor":[20],"field-effect":[21],"transistors":[22],"(MOSFETs)":[23],"under":[24],"400":[25,60],"and":[26,45,54,70,85],"800":[27,93],"V":[28],"bus":[29],"voltage":[30,141],"conditions.":[31],"The":[32,127],"study":[33],"compares":[34],"two":[35],"products":[36],"with":[37,143],"varying":[38],"tolerances,":[40],"scrutinizing":[41],"their":[42,50],"external":[43],"characteristics":[44],"intrinsic":[46],"factors":[47],"that":[48,58],"influence":[49],"endurance.":[52],"Experimental":[53],"numerical":[55],"analyses":[56],"reveal":[57],"at":[59,139],"V,":[61,94],"differential":[63],"thermal":[64,104,125],"expansion":[65],"between":[66],"source":[68],"metal":[69,84],"dielectric":[72],"leads":[73],"to":[74,102,108,120,131,151],"cracking,":[75],"which":[76,115],"turn":[78],"facilitates":[79],"infiltration":[81],"liquid":[83],"results":[86],"gate\u2013source":[89],"short":[90],"circuit.":[91],"At":[92],"mechanism":[97],"is":[98],"markedly":[99],"different,":[100],"attributed":[101],"carrier":[105],"effect":[106],"leading":[107],"degradation":[110],"gate":[113],"oxide,":[114],"impedes":[116],"device's":[118,149],"capacity":[119],"switch":[121],"off,":[122],"thereby":[123],"triggering":[124],"runaway.":[126],"proposes":[129],"strategies":[130],"augment":[132],"robustness":[135],"SiC":[137],"MOSFETs":[138],"both":[140],"levels,":[142],"objective":[145],"fortifying":[147],"resistance":[150],"such":[152],"failures.":[153]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2025-10-10T00:00:00"}