{"id":"https://openalex.org/W4403522778","doi":null,"title":"Strain-relieving mechanism in III-V semiconductors epitaxially grown on Si: misfit dislocations networks","display_name":"Strain-relieving mechanism in III-V semiconductors epitaxially grown on Si: misfit dislocations networks","publication_year":2024,"publication_date":"2024-05-13","ids":{"openalex":"https://openalex.org/W4403522778"},"language":"en","primary_location":{"id":"pmh:oai:HAL:hal-04738478v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-04738478","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"OSEPI : Epitaxie des oxydes et des semiconducteurs 13-17 mai 2024, May 2024, Fr\u00e9jus, France","raw_type":"info:eu-repo/semantics/conferenceObject"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059194079","display_name":"Audrey Gilbert","orcid":"https://orcid.org/0000-0002-3232-673X","observed_orcids":["https://orcid.org/0000-0002-3232-673X"]},"institutions":[{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Gilbert, A","raw_affiliation_strings":["IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","NANOMIR - Composants \u00e0 Nanostructure pour le moyen infrarouge (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","institution_ids":["https://openalex.org/I4210134800"]},{"raw_affiliation_string":"NANOMIR - Composants \u00e0 Nanostructure pour le moyen infrarouge (France)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114285570","display_name":"Karl Graser","orcid":"https://orcid.org/0009-0003-6216-0122","observed_orcids":["https://orcid.org/0009-0003-6216-0122"]},"institutions":[{"id":"https://openalex.org/I4210116306","display_name":"Paul Drude Institute for Solid State Electronics","ror":"https://ror.org/01mk1hj86","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Graser, K","raw_affiliation_strings":["PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik = Paul Drude Institute for Solid State Electronics (Hausvogteiplatz 5-7, 10117 Berlin - Germany)","PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik (Hausvogteiplatz 5-7, 10117 Berlin - Germany)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik = Paul Drude Institute for Solid State Electronics (Hausvogteiplatz 5-7, 10117 Berlin - Germany)","institution_ids":["https://openalex.org/I4210116306"]},{"raw_affiliation_string":"PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik (Hausvogteiplatz 5-7, 10117 Berlin - Germany)","institution_ids":["https://openalex.org/I4210116306"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040650840","display_name":"A. Trampert","orcid":"https://orcid.org/0000-0001-7949-643X","observed_orcids":["https://orcid.org/0000-0001-7949-643X"]},"institutions":[{"id":"https://openalex.org/I4210116306","display_name":"Paul Drude Institute for Solid State Electronics","ror":"https://ror.org/01mk1hj86","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Trampert, A","raw_affiliation_strings":["PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik = Paul Drude Institute for Solid State Electronics (Hausvogteiplatz 5-7, 10117 Berlin - Germany)","PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik (Hausvogteiplatz 5-7, 10117 Berlin - Germany)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik = Paul Drude Institute for Solid State Electronics (Hausvogteiplatz 5-7, 10117 Berlin - Germany)","institution_ids":["https://openalex.org/I4210116306"]},{"raw_affiliation_string":"PDI - Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik (Hausvogteiplatz 5-7, 10117 Berlin - Germany)","institution_ids":["https://openalex.org/I4210116306"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113520921","display_name":"Michel Ramonda","orcid":"https://orcid.org/0009-0008-7610-8612","observed_orcids":["https://orcid.org/0009-0008-7610-8612"]},"institutions":[{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Ramonda, M","raw_affiliation_strings":["Centrale de Technologie en Micro et Nano\u00e9lectronique CTM-\u00adLMCP (France)","IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centrale de Technologie en Micro et Nano\u00e9lectronique CTM-\u00adLMCP (France)","institution_ids":[]},{"raw_affiliation_string":"IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","institution_ids":["https://openalex.org/I4210134800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068094816","display_name":"Eric Tourni\u00e9","orcid":"https://orcid.org/0000-0002-8177-0810","observed_orcids":["https://orcid.org/0000-0002-8177-0810"]},"institutions":[{"id":"https://openalex.org/I185839726","display_name":"Institut Universitaire de France","ror":"https://ror.org/055khg266","country_code":"FR","type":"education","lineage":["https://openalex.org/I185839726"]},{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Tourni\u00e9, E","raw_affiliation_strings":["IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","IUF - Institut universitaire de France (Maison des Universit\u00e9s 103 Boulevard Saint-Michel 75005 Paris - France)","MAT - Mat\u00e9riaux (France)","NANOMIR - Composants \u00e0 Nanostructure pour le moyen infrarouge (France)","PO - Photonique et Ondes (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","institution_ids":["https://openalex.org/I4210134800"]},{"raw_affiliation_string":"IUF - Institut universitaire de France (Maison des Universit\u00e9s 103 Boulevard Saint-Michel 75005 Paris - France)","institution_ids":["https://openalex.org/I185839726"]},{"raw_affiliation_string":"MAT - Mat\u00e9riaux (France)","institution_ids":[]},{"raw_affiliation_string":"NANOMIR - Composants \u00e0 Nanostructure pour le moyen infrarouge (France)","institution_ids":[]},{"raw_affiliation_string":"PO - Photonique et Ondes (France)","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014030716","display_name":"Jean\u2010Baptiste Rodriguez","orcid":"https://orcid.org/0000-0002-1930-1984","observed_orcids":["https://orcid.org/0000-0002-1930-1984"]},"institutions":[{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Rodriguez, J.-B","raw_affiliation_strings":["IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","NANOMIR - Composants \u00e0 Nanostructure pour le moyen infrarouge (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES - Institut d\u2019Electronique et des Syst\u00e8mes (860, rue Saint Priest, B\u00e2timent 5 - CC 05001 -34095 Montpellier Cedex 5 - France)","institution_ids":["https://openalex.org/I4210134800"]},{"raw_affiliation_string":"NANOMIR - Composants \u00e0 Nanostructure pour le moyen infrarouge (France)","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.5503000020980835,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.5503000020980835,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.1687999963760376,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.1273999959230423,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/strain-relaxation","display_name":"strain relaxation","score":0.8029999732971191},{"id":"https://openalex.org/keywords/misfit-dislocations","display_name":"misfit dislocations","score":0.7940000295639038},{"id":"https://openalex.org/keywords/dislocation-networks","display_name":"dislocation networks","score":0.7850000262260437},{"id":"https://openalex.org/keywords/iii-v-on-silicon","display_name":"III-V on silicon","score":0.75},{"id":"https://openalex.org/keywords/threading-dislocation-density","display_name":"threading dislocation density","score":0.7620000243186951},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.6380000114440918},{"id":"https://openalex.org/keywords/antiphase-boundaries","display_name":"antiphase boundaries","score":0.8889999985694885},{"id":"https://openalex.org/keywords/silicon-photonics","display_name":"silicon photonics","score":0.6209999918937683},{"id":"https://openalex.org/keywords/iii-v-semiconductor-lasers","display_name":"III-V semiconductor lasers","score":0.5789999961853027},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.7200000286102295}],"concepts":[{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6829245090484619},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6723197102546692},{"id":"https://openalex.org/C2778022156","wikidata":"https://www.wikidata.org/wiki/Q576145","display_name":"Strain (injury)","level":2,"score":0.5509842038154602},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5448359251022339},{"id":"https://openalex.org/C89611455","wikidata":"https://www.wikidata.org/wiki/Q6804646","display_name":"Mechanism (biology)","level":2,"score":0.4857359528541565},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46384432911872864},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.41766831278800964},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.25832635164260864},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.120848149061203},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.05565077066421509},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C126322002","wikidata":"https://www.wikidata.org/wiki/Q11180","display_name":"Internal medicine","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:HAL:hal-04738478v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-04738478","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"OSEPI : Epitaxie des oxydes et des semiconducteurs 13-17 mai 2024, May 2024, Fr\u00e9jus, France","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4403564689","https://openalex.org/W7151987452","https://openalex.org/W4403626949","https://openalex.org/W7210265020","https://openalex.org/W3044785062","https://openalex.org/W4403522436","https://openalex.org/W4382932737","https://openalex.org/W2942020755","https://openalex.org/W4289524973","https://openalex.org/W4410783357"],"abstract_inverted_index":{"Silicon":[0,34],"photonic":[1],"integrated":[2,57,131],"circuits":[3],"(PICs)":[4],"have":[5,138],"become":[6],"indispensable":[7],"in":[8,15,104,141,183,237],"modern":[9],"technology,":[10],"and":[11,92,111,161,198,256,275],"are":[12,85,254],"particularly":[13],"valuable":[14],"applications":[16],"such":[17,144],"as":[18,145],"high-speed":[19],"telecommunications,":[20],"data":[21],"centers,":[22],"artificial":[23],"intelligence":[24],"or":[25,82,150],"sensing.":[26],"The":[27,94],"monolithic":[28],"integration":[29],"of":[30,46,67,70,97,118,130,171,178,194,211,225,230,277],"III-V":[31,58],"lasers":[32],"on":[33,60,79,201],"(Si)":[35],"substrates":[36],"has":[37],"attracted":[38],"considerable":[39],"attention":[40],"to":[41,266],"combine":[42],"the":[43,50,71,108,119,128,142,172,176,192,202,208,220,228,238,248,269,273],"optoelectronic":[44,278],"properties":[45],"light":[47],"sources":[48],"with":[49],"well-established":[51],"Si":[52,61],"industry":[53],"technology.":[54],"However,":[55],"epitaxially":[56],"devices":[59],"suffer":[62],"from":[63],"a":[64,116,125,184,212,243],"severe":[65],"lack":[66],"reliability":[68,129,276],"because":[69],"large":[72],"crystal":[73],"defect":[74],"density.":[75],"For":[76],"instance,":[77],"polar":[78],"non-polar":[80],"heteroepitaxy,":[81],"lattice":[83],"mismatch":[84],"responsible":[86],"for":[87,127,135,247,271],"forming":[88],"antiphase":[89],"boundaries":[90],"(APBs)":[91],"dislocations.":[93],"high":[95],"density":[96,122],"threading":[98,120],"dislocations":[99,121],"(TDs)":[100],"~":[101],"7x1E8":[102],"cm-2":[103],"our":[105],"layers":[106,153],"degrades":[107],"laser's":[109],"performances":[110],"reduces":[112],"their":[113],"lifetime.":[114],"Therefore,":[115],"reduction":[117,137],"(TDD)":[123],"is":[124,235],"prerequisite":[126],"devices.":[132,279],"Many":[133],"techniques":[134],"TDD":[136,221,270],"been":[139],"reported":[140],"literature":[143],"thermal":[146],"cycling":[147],"annealing":[148],"(TCAs),":[149],"dislocation":[151,173],"filtering":[152],"(DFLs).":[154],"Using":[155],"Electron":[156,163],"Channeling":[157],"Contrast":[158],"Imaging":[159],"(ECCI)":[160],"Transmission":[162],"Microscopy":[164],"(TEM),":[165],"we":[166,240],"conducted":[167],"an":[168,179],"extensive":[169],"study":[170],"networks":[174],"at":[175],"interfaces":[177],"AlSb":[180,216,264],"DFL":[181,196,249],"inserted":[182],"GaSb":[185],"buffer":[186],"layer.":[187],"Our":[188],"presentation":[189],"will":[190,241],"address":[191],"effect":[193],"TCAs,":[195],"thickness":[197,200],"cap":[199],"TDD.":[203],"It":[204],"was":[205],"found":[206],"that":[207],"sole":[209],"insertion":[210],"300":[213],"nm":[214],"interfacial":[215,231],"layer":[217],"helps":[218],"reduce":[219,268],"by":[222],"one":[223],"order":[224],"magnitude.":[226],"While":[227],"understanding":[229],"misfit":[232],"network":[233],"formation":[234],"limited":[236],"literature,":[239],"propose":[242],"strain":[244],"relaxation":[245],"mechanism":[246],"interfaces.":[250],"These":[251],"initial":[252],"findings":[253],"promising,":[255],"motivate":[257],"new":[258],"exploration":[259],"paths":[260],"like":[261],"coupling":[262],"several":[263],"layers,":[265],"further":[267],"optimizing":[272],"performance,":[274]},"counts_by_year":[],"updated_date":"2026-11-11T12:16:26.678958","created_date":"2024-10-18T00:00:00"}