{"id":"https://openalex.org/W4401396607","doi":"https://doi.org/10.1134/s1063783424600766","title":"Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor","display_name":"Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor","publication_year":2024,"publication_date":"2024-06-01","ids":{"openalex":"https://openalex.org/W4401396607","doi":"https://doi.org/10.1134/s1063783424600766"},"language":"en","primary_location":{"id":"doi:10.1134/s1063783424600766","doi":"https://doi.org/10.1134/s1063783424600766","is_oa":true,"landing_page_url":"https://doi.org/10.1134/s1063783424600766","pdf_url":null,"source":{"id":"https://openalex.org/S1070115","display_name":"Physics of the Solid State","issn_l":"0367-3294","issn":["0367-3294","1063-7834","1090-6460","1726-7498"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physics of the Solid State","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://doi.org/10.1134/s1063783424600766","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040542712","display_name":"Abdelmalek Douara","orcid":"https://orcid.org/0009-0000-4048-8301","observed_orcids":["https://orcid.org/0009-0000-4048-8301","https://orcid.org/0009-0006-1086-201X"]},"institutions":[{"id":"https://openalex.org/I4210103375","display_name":"Tissemsilt University","ror":"https://ror.org/01mc1cc12","country_code":"DZ","type":"education","lineage":["https://openalex.org/I4210103375"]}],"countries":["DZ"],"is_corresponding":true,"raw_author_name":"Abdelmalek Douara","raw_affiliation_strings":["Faculty of Science and Technology, Tissemsilt University, 38000, Tissemsilt, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Science and Technology, Tissemsilt University, 38000, Tissemsilt, Algeria","institution_ids":["https://openalex.org/I4210103375"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084593666","display_name":"Abdelaziz Rabehi","orcid":"https://orcid.org/0000-0001-8684-4754","observed_orcids":["https://orcid.org/0000-0001-8684-4754"]},"institutions":[{"id":"https://openalex.org/I4210086990","display_name":"Ziane Achour University of Djelfa","ror":"https://ror.org/000jvv118","country_code":"DZ","type":"education","lineage":["https://openalex.org/I4210086990"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Abdelaziz Rabehi","raw_affiliation_strings":["Telecommunications and Smart Systems Laboratory, University of Djelfa, PO Box 3117, 17000, Djelfa, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Telecommunications and Smart Systems Laboratory, University of Djelfa, PO Box 3117, 17000, Djelfa, Algeria","institution_ids":["https://openalex.org/I4210086990"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023316240","display_name":"Mawloud Guermoui","orcid":"https://orcid.org/0000-0002-3691-9874","observed_orcids":["https://orcid.org/0000-0002-3691-9874"]},"institutions":[{"id":"https://openalex.org/I4210116835","display_name":"Renewable Energy Development Center","ror":"https://ror.org/02eeqxc82","country_code":"DZ","type":"facility","lineage":["https://openalex.org/I4210116835"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Mawloud Guermoui","raw_affiliation_strings":["Unit\u00e9 de Recherche Appliqu\u00e9e en Energies Renouvelables, URAER, Centre de D\u00e9veloppement des Energies Renouvelables, CDER, 47133, Gharda\u00efa, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Unit\u00e9 de Recherche Appliqu\u00e9e en Energies Renouvelables, URAER, Centre de D\u00e9veloppement des Energies Renouvelables, CDER, 47133, Gharda\u00efa, Algeria","institution_ids":["https://openalex.org/I4210116835"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5092969145","display_name":"Rania Daha","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405258926","display_name":"National Higher School of Technology and Engineering Annaba","ror":"https://ror.org/01e536d88","country_code":"DZ","type":"education","lineage":["https://openalex.org/I4405258926"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Rania Daha","raw_affiliation_strings":["National Higher School of Technology and Engineering (ENSTI), Laboratory L3M, 23005, Annaba, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Higher School of Technology and Engineering (ENSTI), Laboratory L3M, 23005, Annaba, Algeria","institution_ids":["https://openalex.org/I4405258926"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5093755313","display_name":"Imad Eddine Tibermacine","orcid":"https://orcid.org/0009-0004-4729-7128","observed_orcids":["https://orcid.org/0009-0004-4729-7128"]},"institutions":[{"id":"https://openalex.org/I861853513","display_name":"Sapienza University of Rome","ror":"https://ror.org/02be6w209","country_code":"IT","type":"education","lineage":["https://openalex.org/I861853513"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Imad Eddine Tibermacine","raw_affiliation_strings":["Department of Computer, Control, and Management Engineering, Sapienza University of Rome, 00185, Rome, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Computer, Control, and Management Engineering, Sapienza University of Rome, 00185, Rome, Italy","institution_ids":["https://openalex.org/I861853513"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5040542712"],"corresponding_institution_ids":["https://openalex.org/I4210103375"],"apc_list":null,"apc_paid":null,"fwci":4.7108,"has_fulltext":false,"cited_by_count":40,"citation_normalized_percentile":{"value":0.96797112,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":100},"biblio":{"volume":"66","issue":"6","first_page":"157","last_page":"164"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inaln-gan-hemt","display_name":"InAlN/GaN HEMT","score":0.8980000019073486},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.9480000138282776},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.8080000281333923},{"id":"https://openalex.org/keywords/electron-density","display_name":"electron density","score":0.8180000185966492},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.9779999852180481},{"id":"https://openalex.org/keywords/output-current","display_name":"output current","score":0.9959999918937683},{"id":"https://openalex.org/keywords/device-optimization","display_name":"device optimization","score":0.718999981880188},{"id":"https://openalex.org/keywords/semiconductor-device-simulation","display_name":"semiconductor device simulation","score":0.3709999918937683}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8719251155853271},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.7518768310546875},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6786201000213623},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6601556539535522},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6030244827270508},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5349791049957275},{"id":"https://openalex.org/C132882038","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"Induced high electron mobility transistor","level":5,"score":0.5134049654006958},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.48578813672065735},{"id":"https://openalex.org/C43588577","wikidata":"https://www.wikidata.org/wiki/Q715396","display_name":"Solid-state physics","level":2,"score":0.4456753730773926},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.18634411692619324},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16715428233146667},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.11845937371253967},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05477532744407654},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1134/s1063783424600766","doi":"https://doi.org/10.1134/s1063783424600766","is_oa":true,"landing_page_url":"https://doi.org/10.1134/s1063783424600766","pdf_url":null,"source":{"id":"https://openalex.org/S1070115","display_name":"Physics of the Solid State","issn_l":"0367-3294","issn":["0367-3294","1063-7834","1090-6460","1726-7498"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physics of the Solid State","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1134/s1063783424600766","doi":"https://doi.org/10.1134/s1063783424600766","is_oa":true,"landing_page_url":"https://doi.org/10.1134/s1063783424600766","pdf_url":null,"source":{"id":"https://openalex.org/S1070115","display_name":"Physics of the Solid State","issn_l":"0367-3294","issn":["0367-3294","1063-7834","1090-6460","1726-7498"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physics of the Solid State","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W595150157","https://openalex.org/W1483254825","https://openalex.org/W1926220507","https://openalex.org/W1988542153","https://openalex.org/W1998591663","https://openalex.org/W2023749789","https://openalex.org/W2035667008","https://openalex.org/W2049953887","https://openalex.org/W2053406524","https://openalex.org/W2077931859","https://openalex.org/W2088545405","https://openalex.org/W2092528494","https://openalex.org/W2097322072","https://openalex.org/W2135424717","https://openalex.org/W2156766125","https://openalex.org/W2346536607","https://openalex.org/W2461152827","https://openalex.org/W2533822859","https://openalex.org/W2549329063","https://openalex.org/W2554249918","https://openalex.org/W2583433486","https://openalex.org/W2762532048","https://openalex.org/W2895974735","https://openalex.org/W2904116744","https://openalex.org/W2942784119","https://openalex.org/W3204422897","https://openalex.org/W4309009391","https://openalex.org/W4313703391","https://openalex.org/W4367678580","https://openalex.org/W4382874421","https://openalex.org/W4383263138"],"related_works":["https://openalex.org/W595150157","https://openalex.org/W4367678580","https://openalex.org/W7126032100","https://openalex.org/W7128189798","https://openalex.org/W4401419665","https://openalex.org/W4383263138","https://openalex.org/W3004031669","https://openalex.org/W2250334911","https://openalex.org/W1982218834","https://openalex.org/W4366472755"],"abstract_inverted_index":{"Abstract":[0],"In":[1],"this":[2,156],"paper,":[3],"we":[4,93,159],"delved":[5],"into":[6],"the":[7,22,35,50,55,61,105,125,147,166,174,189],"intricacies":[8],"of":[9,24,34,54,108,121,134,151,170,191],"In0.17Al0.83N/GaN":[10,62,171],"high-electron-mobility":[11],"transistors":[12],"(HEMTs)":[13],"using":[14],"a":[15,80,131],"comprehensive":[16],"simulation":[17,26,153],"model":[18],"and":[19,41,52,88,100,129,149,168,180,199,208],"by":[20],"Leveraging":[21],"capabilities":[23],"Nextnano":[25],"software.":[27],"We":[28],"extensively":[29],"explored":[30],"how":[31,68],"different":[32,69],"thicknesses":[33,73],"AlN":[36,70,84,109,119,193],"buffer":[37,71,85,194],"layer":[38,72,86,195],"impact":[39,74],"electronic":[40,184],"electrical":[42],"properties.":[43],"Our":[44,77,114,186],"study":[45,187],"was":[46],"centered":[47],"on":[48,104,111],"scrutinizing":[49],"density":[51],"mobility":[53],"two-dimensional":[56],"electron":[57],"gas":[58],"(2-DEG)":[59],"within":[60],"HEMT":[63],"structure.":[64],"Aiming":[65],"to":[66],"understand":[67],"device":[75,112,178,212],"performance.":[76],"findings":[78],"unveil":[79],"crucial":[81],"relationship":[82],"between":[83],"thickness":[87,110,120,196],"critical":[89],"performance":[90,179],"metrics.":[91],"Specifically,":[92],"observed":[94],"significant":[95],"trends":[96],"in":[97,197,210],"output":[98,127],"current":[99,128],"transconductance,":[101],"shedding":[102],"light":[103],"direct":[106],"influence":[107],"behavior.":[113],"simulations":[115],"identified":[116],"an":[117],"optimal":[118],"350":[122],"nm,":[123],"demonstrating":[124],"highest":[126],"surpassing":[130],"transconductance":[132],"peak":[133],"510":[135],"mS/mm.":[136],"Importantly,":[137],"our":[138,152],"computational":[139],"predictions":[140],"closely":[141],"align":[142],"with":[143],"experimental":[144],"observations,":[145],"validating":[146],"reliability":[148],"accuracy":[150],"model.":[154],"Through":[155],"meticulous":[157],"analysis,":[158],"contribute":[160],"valuable":[161],"insights":[162],"that":[163],"can":[164],"guide":[165],"design":[167],"optimization":[169],"HEMT,":[172],"paving":[173],"way":[175],"for":[176,205],"improved":[177],"functionality":[181],"across":[182],"various":[183],"applications.":[185],"underscores":[188],"importance":[190],"considering":[192],"designing":[198],"engineering":[200],"high-performance":[201],"HEMTs,":[202],"highlighting":[203],"avenues":[204],"future":[206],"research":[207],"development":[209],"semiconductor":[211],"technology.":[213]},"counts_by_year":[{"year":2026,"cited_by_count":22},{"year":2025,"cited_by_count":17},{"year":2024,"cited_by_count":1}],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2024-08-08T00:00:00"}