{"id":"https://openalex.org/W4401070513","doi":"https://doi.org/10.1109/led.2024.3435328","title":"Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology","display_name":"Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology","publication_year":2024,"publication_date":"2024-07-29","ids":{"openalex":"https://openalex.org/W4401070513","doi":"https://doi.org/10.1109/led.2024.3435328"},"language":"en","primary_location":{"id":"doi:10.1109/led.2024.3435328","doi":"https://doi.org/10.1109/led.2024.3435328","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2024.3435328","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086990547","display_name":"Yanfeng Ma","orcid":"https://orcid.org/0009-0004-9110-8566","observed_orcids":["https://orcid.org/0009-0004-9110-8566"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanfeng Ma","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0009-0004-9110-8566","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100359847","display_name":"Sheng Li","orcid":"https://orcid.org/0000-0003-4729-9460","observed_orcids":["https://orcid.org/0000-0003-4729-9460"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Sheng Li","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0003-4729-9460","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054487014","display_name":"Ran Ye","orcid":"https://orcid.org/0000-0003-3211-8866","observed_orcids":["https://orcid.org/0000-0003-3211-8866"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ran Ye","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030771407","display_name":"Denggui Wang","orcid":"https://orcid.org/0000-0003-1687-2615","observed_orcids":["https://orcid.org/0000-0003-1687-2615"]},"institutions":[{"id":"https://openalex.org/I4405281920","display_name":"The 28th Research Institute of China Electronics Technology Group Corporation","ror":"https://ror.org/05355jx47","country_code":"CN","type":"facility","lineage":["https://openalex.org/I2800372957","https://openalex.org/I4405281920"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Denggui Wang","raw_affiliation_strings":["Nanjing Electronic Devices Institute, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":["https://openalex.org/I4405281920"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101693216","display_name":"Weihao Lu","orcid":"https://orcid.org/0009-0002-8135-4865","observed_orcids":["https://orcid.org/0009-0002-8135-4865"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weihao Lu","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100737374","display_name":"Mingfei Li","orcid":"https://orcid.org/0000-0003-4040-3392","observed_orcids":["https://orcid.org/0000-0003-4040-3392"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mingfei Li","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101770745","display_name":"Lixi Wang","orcid":"https://orcid.org/0000-0003-4481-1924","observed_orcids":["https://orcid.org/0000-0003-4481-1924"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lixi Wang","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Chi Zhang","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chi Zhang","raw_affiliation_strings":["Chipown Micro-Electronics Ltd., Wuxi, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chipown Micro-Electronics Ltd., Wuxi, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100429004","display_name":"Jun Sun","orcid":"https://orcid.org/0000-0002-3545-1392","observed_orcids":["https://orcid.org/0000-0002-3545-1392","https://orcid.org/0000-0002-0325-1951"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jun Sun","raw_affiliation_strings":["CSMC Technologies Corporation, Wuxi, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CSMC Technologies Corporation, Wuxi, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043271824","display_name":"Jiaxing Wei","orcid":"https://orcid.org/0000-0002-9896-3360","observed_orcids":["https://orcid.org/0000-0002-9896-3360"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiaxing Wei","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-9896-3360","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100363552","display_name":"Long Zhang","orcid":"https://orcid.org/0000-0003-0254-6085","observed_orcids":["https://orcid.org/0000-0003-0254-6085"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Long Zhang","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0003-0254-6085","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100629071","display_name":"Siyang Liu","orcid":"https://orcid.org/0000-0001-6498-9901","observed_orcids":["https://orcid.org/0000-0001-6498-9901","https://orcid.org/0000-0002-4050-5113","https://orcid.org/0009-0001-9409-1171","https://orcid.org/0009-0006-5962-8937"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Siyang Liu","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0001-6498-9901","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101828449","display_name":"Lanlan Yang","orcid":"https://orcid.org/0000-0002-9195-6109","observed_orcids":["https://orcid.org/0000-0002-9195-6109"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lanlan Yang","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-9195-6109","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100764839","display_name":"Weifeng Sun","orcid":"https://orcid.org/0000-0002-3289-8877","observed_orcids":["https://orcid.org/0000-0002-3289-8877"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weifeng Sun","raw_affiliation_strings":["National ASIC System Engineering Research Centre, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-3289-8877","affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Centre, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2495,"currency":"USD","value_usd":2495},"apc_paid":null,"fwci":0.4759,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.5060573,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"45","issue":"10","first_page":"1922","last_page":"1925"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.8310999870300293,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.8310999870300293,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.11500000208616257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.052000001072883606,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/esd-reliability","display_name":"ESD reliability","score":0.8220000267028809},{"id":"https://openalex.org/keywords/gate-leakage-current","display_name":"gate leakage current","score":0.8190000057220459}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5962191820144653},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5777864456176758},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5442245006561279},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5017099380493164},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.5003573894500732},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.48994961380958557},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4651055932044983},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.45795854926109314},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4423038363456726},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43311795592308044},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27068257331848145},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16666775941848755},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15651699900627136},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15376484394073486},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07821381092071533},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/led.2024.3435328","doi":"https://doi.org/10.1109/led.2024.3435328","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2024.3435328","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1645593414","display_name":null,"funder_award_id":"62104218","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G416956254","display_name":null,"funder_award_id":"62204034","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5620386573","display_name":null,"funder_award_id":"62174029","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7193422257","display_name":null,"funder_award_id":"2022TQ0061","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7709543888","display_name":null,"funder_award_id":"2022M720710","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2593495332","https://openalex.org/W2742462299","https://openalex.org/W2904863221","https://openalex.org/W3008490549","https://openalex.org/W3048059623","https://openalex.org/W3060043826","https://openalex.org/W3086146674","https://openalex.org/W4225305692","https://openalex.org/W4285108557","https://openalex.org/W4312741558","https://openalex.org/W4352976915","https://openalex.org/W4391430036"],"related_works":["https://openalex.org/W4312741558","https://openalex.org/W7164367672","https://openalex.org/W7140175048","https://openalex.org/W3060043826","https://openalex.org/W4400450239","https://openalex.org/W4352976915","https://openalex.org/W4404179251","https://openalex.org/W7165566938","https://openalex.org/W3177817886","https://openalex.org/W4398787726"],"abstract_inverted_index":{"A":[0],"novel":[1],"hybrid":[2,69,99],"gate":[3,11,22,36,50,70,78,95,100],"technology":[4,71],"is":[5,54,72,80],"proved":[6],"to":[7,97],"effectively":[8],"improve":[9],"forward":[10],"ESD":[12],"reliability":[13],"for":[14],"p-GaN":[15,66],"power":[16],"HEMTs.":[17],"Unlike":[18],"traditional":[19],"technology,":[20],"the":[21,32,58,77,87],"metal":[23,27],"consists":[24],"of":[25,65],"ohmic-type":[26,49,94],"and":[28],"Schottky-type":[29],"metal.":[30],"Then":[31],"energy":[33],"introduced":[34],"by":[35,74,82],"electrostatic":[37],"discharge":[38,46],"(ESD)":[39],"can":[40],"be":[41],"easily":[42],"released":[43],"through":[44],"a":[45],"path":[47],"in":[48],"contact":[51],"region.":[52],"It":[53],"experimentally":[55],"demonstrated":[56],"that":[57],"transmission":[59],"line":[60],"pulsing":[61],"(TLP)":[62],"failure":[63],"current":[64],"HEMT":[67],"with":[68,92],"improved":[73],"1005.8%,":[75],"while":[76],"leakage":[79],"increased":[81],"only":[83],"130.6%.":[84],"In":[85],"addition,":[86],"TLP":[88],"behaviors":[89],"are":[90],"modeled":[91],"different":[93],"areas":[96],"guide":[98],"structure":[101],"design.":[102]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2024-07-31T00:00:00"}