{"id":"https://openalex.org/W4400747006","doi":"https://doi.org/10.1016/j.nanoms.2024.07.001","title":"Manipulating adsorbate configurations in copper electroplated low aspect-ratio via fill in redistribution layers","display_name":"Manipulating adsorbate configurations in copper electroplated low aspect-ratio via fill in redistribution layers","publication_year":2024,"publication_date":"2024-07-16","ids":{"openalex":"https://openalex.org/W4400747006","doi":"https://doi.org/10.1016/j.nanoms.2024.07.001"},"language":"en","primary_location":{"id":"doi:10.1016/j.nanoms.2024.07.001","doi":"https://doi.org/10.1016/j.nanoms.2024.07.001","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.nanoms.2024.07.001","pdf_url":null,"source":{"id":"https://openalex.org/S4210230927","display_name":"Nano Materials Science","issn_l":"2096-6482","issn":["2096-6482","2589-9651"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","oarl","poland-40","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nano Materials Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://doi.org/10.1016/j.nanoms.2024.07.001","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060560520","display_name":"Zhen-Jia Peng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I180726961","display_name":"Shenzhen University","ror":"https://ror.org/01vy4gh70","country_code":"CN","type":"education","lineage":["https://openalex.org/I180726961"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhenjia Peng","raw_affiliation_strings":["College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China","Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I180726961"]},{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100356634","display_name":"Zhe Yi Li","orcid":"https://orcid.org/0000-0002-0475-9642","observed_orcids":["https://orcid.org/0000-0002-0475-9642"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Zhe Li","raw_affiliation_strings":["Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5115597783","display_name":"Yu Jiao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Jiao","raw_affiliation_strings":["Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China","Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China","institution_ids":["https://openalex.org/I126520041"]},{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043896747","display_name":"Ning Zhang","orcid":"https://orcid.org/0000-0001-5244-9369","observed_orcids":["https://orcid.org/0000-0001-5244-9369"]},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ning Zhang","raw_affiliation_strings":["Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China","Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China","institution_ids":["https://openalex.org/I126520041"]},{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114180092","display_name":"Qi Zhang","orcid":"https://orcid.org/0000-0002-9336-0755","observed_orcids":["https://orcid.org/0000-0002-9336-0755"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I204512498","display_name":"University of Macau","ror":"https://ror.org/01r4q9n85","country_code":"MO","type":"education","lineage":["https://openalex.org/I204512498"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN","MO"],"is_corresponding":false,"raw_author_name":"Qi Zhang","raw_affiliation_strings":["Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, China","Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, China","institution_ids":["https://openalex.org/I204512498"]},{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104111515","display_name":"Binbin Zhou","orcid":"https://orcid.org/0009-0004-6633-2611","observed_orcids":["https://orcid.org/0009-0004-6633-2611"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Binbin Zhou","raw_affiliation_strings":["Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051246236","display_name":"Li\u2010Yin Gao","orcid":"https://orcid.org/0000-0002-6018-8901","observed_orcids":["https://orcid.org/0000-0002-6018-8901"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liyin Gao","raw_affiliation_strings":["Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109892610","display_name":"Xian-Zhu Fu","orcid":"https://orcid.org/0000-0002-3236-4939","observed_orcids":["https://orcid.org/0000-0002-3236-4939"]},"institutions":[{"id":"https://openalex.org/I180726961","display_name":"Shenzhen University","ror":"https://ror.org/01vy4gh70","country_code":"CN","type":"education","lineage":["https://openalex.org/I180726961"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xianzhu Fu","raw_affiliation_strings":["College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I180726961"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100608590","display_name":"Zhi\u2010Quan Liu","orcid":"https://orcid.org/0000-0001-7097-8977","observed_orcids":["https://orcid.org/0000-0001-7097-8977"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Zhiquan Liu","raw_affiliation_strings":["Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen, 518055, China","Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101774540","display_name":"Rong Sun","orcid":"https://orcid.org/0000-0001-9719-3563","observed_orcids":["https://orcid.org/0000-0001-9719-3563"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"id":"https://openalex.org/I4405278151","display_name":"Shenzhen Institute of Advanced Electronic Materials","ror":"https://ror.org/05465wm23","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rong Sun","raw_affiliation_strings":["Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen, 518055, China","Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4405278151"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5100356634","https://openalex.org/A5100608590","https://openalex.org/A5104111515"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165038","https://openalex.org/I4405278151"],"apc_list":{"value":0,"currency":"USD","value_usd":0},"apc_paid":null,"fwci":1.0049,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.66706366,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"7","issue":"4","first_page":"500","last_page":"510"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11200","display_name":"Electrodeposition and Electroless Coatings","score":0.9663000106811523,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11200","display_name":"Electrodeposition and Electroless Coatings","score":0.9663000106811523,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.02879999950528145,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/copper-electrodeposition","display_name":"copper electrodeposition","score":0.9829999804496765},{"id":"https://openalex.org/keywords/redistribution-layer","display_name":"redistribution layer","score":0.9539999961853027},{"id":"https://openalex.org/keywords/electrodeposition-additives","display_name":"electrodeposition additives","score":0.8510000109672546},{"id":"https://openalex.org/keywords/raman-spectroelectrochemistry","display_name":"Raman spectroelectrochemistry","score":0.7450000047683716},{"id":"https://openalex.org/keywords/quantum-chemistry","display_name":"quantum chemistry","score":0.4790000021457672}],"concepts":[{"id":"https://openalex.org/C74080474","wikidata":"https://www.wikidata.org/wiki/Q7305975","display_name":"Redistribution (election)","level":3,"score":0.84039306640625},{"id":"https://openalex.org/C51807945","wikidata":"https://www.wikidata.org/wiki/Q3503392","display_name":"Electroplating","level":3,"score":0.7526013255119324},{"id":"https://openalex.org/C544778455","wikidata":"https://www.wikidata.org/wiki/Q753","display_name":"Copper","level":2,"score":0.7198640704154968},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6273229122161865},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.4337455928325653},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.36313265562057495},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07701385021209717},{"id":"https://openalex.org/C94625758","wikidata":"https://www.wikidata.org/wiki/Q7163","display_name":"Politics","level":2,"score":0.0},{"id":"https://openalex.org/C199539241","wikidata":"https://www.wikidata.org/wiki/Q7748","display_name":"Law","level":1,"score":0.0},{"id":"https://openalex.org/C17744445","wikidata":"https://www.wikidata.org/wiki/Q36442","display_name":"Political science","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/j.nanoms.2024.07.001","doi":"https://doi.org/10.1016/j.nanoms.2024.07.001","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.nanoms.2024.07.001","pdf_url":null,"source":{"id":"https://openalex.org/S4210230927","display_name":"Nano Materials Science","issn_l":"2096-6482","issn":["2096-6482","2589-9651"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","oarl","poland-40","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nano Materials Science","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:04b227859ea04ed4a48bdcd394f905f6","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/04b227859ea04ed4a48bdcd394f905f6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Nano Materials Science, Vol 7, Iss 4, Pp 500-510 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1016/j.nanoms.2024.07.001","doi":"https://doi.org/10.1016/j.nanoms.2024.07.001","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.nanoms.2024.07.001","pdf_url":null,"source":{"id":"https://openalex.org/S4210230927","display_name":"Nano Materials Science","issn_l":"2096-6482","issn":["2096-6482","2589-9651"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","oarl","poland-40","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nano Materials Science","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1803554395","display_name":null,"funder_award_id":"2023B0101040002","funder_id":"https://openalex.org/F4320336405","funder_display_name":"Special Project for Research and Development in Key areas of Guangdong Province"},{"id":"https://openalex.org/G5913755193","display_name":null,"funder_award_id":"62274172","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6935520047","display_name":null,"funder_award_id":"2022B1515120037","funder_id":"https://openalex.org/F4320337111","funder_display_name":"Basic and Applied Basic Research Foundation of Guangdong Province"},{"id":"https://openalex.org/G7481887820","display_name":null,"funder_award_id":"62304143","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G752912252","display_name":null,"funder_award_id":"52303092","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320336405","display_name":"Special Project for Research and Development in Key areas of Guangdong Province","ror":null},{"id":"https://openalex.org/F4320337111","display_name":"Basic and Applied Basic Research Foundation of Guangdong Province","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":51,"referenced_works":["https://openalex.org/W1192089059","https://openalex.org/W1845074598","https://openalex.org/W1964252146","https://openalex.org/W1974146122","https://openalex.org/W1975395897","https://openalex.org/W1986272746","https://openalex.org/W1986655723","https://openalex.org/W1993754488","https://openalex.org/W2001798675","https://openalex.org/W2038443339","https://openalex.org/W2038704816","https://openalex.org/W2051407053","https://openalex.org/W2053936231","https://openalex.org/W2054254687","https://openalex.org/W2073864221","https://openalex.org/W2082626445","https://openalex.org/W2086721654","https://openalex.org/W2092261640","https://openalex.org/W2094727110","https://openalex.org/W2108897013","https://openalex.org/W2126908324","https://openalex.org/W2140454529","https://openalex.org/W2323978071","https://openalex.org/W2463584121","https://openalex.org/W2563340979","https://openalex.org/W2585203885","https://openalex.org/W2611542284","https://openalex.org/W2797743341","https://openalex.org/W2811251825","https://openalex.org/W2899879109","https://openalex.org/W3000522971","https://openalex.org/W3012516020","https://openalex.org/W3033196970","https://openalex.org/W3037978073","https://openalex.org/W3043895451","https://openalex.org/W3112516630","https://openalex.org/W3126453652","https://openalex.org/W3149300053","https://openalex.org/W3163538211","https://openalex.org/W3209612713","https://openalex.org/W3215465715","https://openalex.org/W3217397431","https://openalex.org/W4214737904","https://openalex.org/W4220825777","https://openalex.org/W4224087248","https://openalex.org/W4280640467","https://openalex.org/W4293064128","https://openalex.org/W4293180238","https://openalex.org/W4296242288","https://openalex.org/W4313325256","https://openalex.org/W4327974195"],"related_works":["https://openalex.org/W4414270757","https://openalex.org/W4394712721","https://openalex.org/W2148884717","https://openalex.org/W7098334591","https://openalex.org/W2996602084","https://openalex.org/W7133126039","https://openalex.org/W7164203027","https://openalex.org/W2094081349","https://openalex.org/W2314979662","https://openalex.org/W2108897013"],"abstract_inverted_index":{"Copper":[0],"metal":[1],"is":[2,123],"widely":[3],"electroplated":[4],"for":[5,29,98],"microelectronic":[6],"interconnections":[7],"such":[8],"as":[9],"redistribution":[10],"layers":[11],"(RDL),":[12],"pillar":[13],"bumps,":[14],"through":[15],"silicon":[16],"vias,":[17],"etc.":[18],"With":[19],"advances":[20],"of":[21,37,170,186,190],"multilayered":[22],"RDL,":[23],"via-on-via":[24],"structures":[25],"have":[26],"been":[27,96],"developed":[28,97],"ultrahigh-density":[30],"any-layer":[31],"interconnection,":[32],"which":[33],"expects":[34],"superconformal":[35],"filling":[36],"interlayer":[38],"low":[39,74],"aspect-ratio":[40,67,75],"vias":[41,69],"jointly":[42],"with":[43,196],"coplanar":[44],"lines":[45],"and":[46,70,101,111,130,179,184],"pads.":[47],"However,":[48],"it":[49],"poses":[50],"a":[51,92,136,150],"great":[52],"challenge":[53],"to":[54,65,139,153,165,194],"electrodeposition,":[55],"because":[56],"current":[57],"via":[58,79],"fill":[59,100],"mechanisms":[60],"are":[61],"stemming":[62],"from":[63,104,162],"middle":[64],"high":[66],"(>0.8)":[68],"lacking":[71],"applicability":[72],"in":[73,107,182],"(<0.3)":[76],"RDL-vias,":[77],"where":[78],"geometry":[80],"related":[81],"electric-flow":[82],"fields":[83],"coupling":[84],"must":[85],"be":[86,160],"reconsidered.":[87],"In":[88],"the":[89,133,147],"present":[90],"work,":[91],"four-additive":[93],"strategy":[94],"has":[95],"RDL-vias":[99],"thoroughly":[102],"investigated":[103],"additive":[105],"electrochemistry,":[106],"situ":[108],"Raman":[109],"spectroelectrochemistry,":[110],"quantum":[112],"chemistry":[113],"perspectives.":[114],"A":[115],"novel":[116],"adsorbate":[117,134,148,192],"configuration":[118,138,152],"controlled":[119],"(ACC)":[120],"electrodeposition":[121],"mechanism":[122],"established":[124],"that":[125],"at":[126,144],"weak-convection":[127],"bilateral":[128],"edges":[129],"lower":[131],"corners,":[132],"displays":[135],"weakly-adsorbing":[137],"assist":[140],"accelerator-governed":[141],"deposition,":[142],"whereas":[143],"strong-convection":[145],"center,":[146],"exhibits":[149],"mildly-adsorbing":[151],"promote":[154],"leveler-determined":[155],"inhibition.":[156],"Deposit":[157],"profiles":[158],"can":[159],"tailored":[161],"dished,":[163],"flat":[164],"domed,":[166],"depending":[167],"on":[168],"predominance":[169],"leveler":[171],"over":[172],"accelerator.":[173],"This":[174],"study":[175],"should":[176],"lay":[177],"theoretical":[178],"practical":[180],"foundations":[181],"design":[183],"application":[185],"copper":[187],"electroplating":[188],"additives":[189],"multiple":[191],"configurations":[193],"cope":[195],"complicated":[197],"interconnect":[198],"scenarios.":[199]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1}],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2024-07-18T00:00:00"}