{"id":"https://openalex.org/W4393131607","doi":"https://doi.org/10.1016/j.pedc.2024.100065","title":"Rapid detection of capture and emission processes in surface and buffer traps: Understanding dynamic degradation in GaN power devices","display_name":"Rapid detection of capture and emission processes in surface and buffer traps: Understanding dynamic degradation in GaN power devices","publication_year":2024,"publication_date":"2024-03-24","ids":{"openalex":"https://openalex.org/W4393131607","doi":"https://doi.org/10.1016/j.pedc.2024.100065"},"language":"en","primary_location":{"id":"doi:10.1016/j.pedc.2024.100065","doi":"https://doi.org/10.1016/j.pedc.2024.100065","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.pedc.2024.100065","pdf_url":null,"source":{"id":"https://openalex.org/S4210224393","display_name":"Power Electronic Devices and Components","issn_l":"2772-3704","issn":["2772-3704"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Power Electronic Devices and Components","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1016/j.pedc.2024.100065","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055988506","display_name":"Yixu Yao","orcid":"https://orcid.org/0000-0002-9910-7769","observed_orcids":["https://orcid.org/0000-0002-9910-7769"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yixu Yao","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China"],"raw_orcid":"https://orcid.org/0000-0002-9910-7769","affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041128499","display_name":"Sen Huang","orcid":"https://orcid.org/0000-0002-5980-3161","observed_orcids":["https://orcid.org/0000-0002-5980-3161"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Sen Huang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":"https://orcid.org/0000-0002-5980-3161","affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047869940","display_name":"Qimeng Jiang","orcid":"https://orcid.org/0000-0002-7554-1763","observed_orcids":["https://orcid.org/0000-0002-7554-1763","https://orcid.org/0009-0001-2649-725X"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qimeng Jiang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100395843","display_name":"Xinhua Wang","orcid":"https://orcid.org/0000-0002-6592-7515","observed_orcids":["https://orcid.org/0000-0002-6592-7515"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinhua Wang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054776224","display_name":"Yifei Huang","orcid":"https://orcid.org/0000-0002-5382-966X","observed_orcids":["https://orcid.org/0000-0002-5382-966X"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yifei Huang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101626666","display_name":"Yi Pei","orcid":"https://orcid.org/0000-0003-0906-1056","observed_orcids":["https://orcid.org/0000-0003-0906-1056"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yi Pei","raw_affiliation_strings":["Dynax Semiconductor, Suzhou 215300, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dynax Semiconductor, Suzhou 215300, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010967229","display_name":"Hongtu Qian","orcid":"https://orcid.org/0000-0003-4597-6325","observed_orcids":["https://orcid.org/0000-0003-4597-6325"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hongtu Qian","raw_affiliation_strings":["Dynax Semiconductor, Suzhou 215300, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dynax Semiconductor, Suzhou 215300, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100323575","display_name":"Hui Zhang","orcid":"https://orcid.org/0009-0007-7132-0844","observed_orcids":["https://orcid.org/0009-0007-7132-0844"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hui Zhang","raw_affiliation_strings":["Dynax Semiconductor, Suzhou 215300, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dynax Semiconductor, Suzhou 215300, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101649301","display_name":"Fuqiang Guo","orcid":"https://orcid.org/0000-0001-5113-519X","observed_orcids":["https://orcid.org/0000-0001-5113-519X"]},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fuqiang Guo","raw_affiliation_strings":["School of Physics, Peking University, Beijing 100871, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics, Peking University, Beijing 100871, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101807811","display_name":"Bo Shen","orcid":"https://orcid.org/0000-0003-2786-8400","observed_orcids":["https://orcid.org/0000-0003-2786-8400"]},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Shen","raw_affiliation_strings":["School of Physics, Peking University, Beijing 100871, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics, Peking University, Beijing 100871, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100446446","display_name":"Xinyu Liu","orcid":"https://orcid.org/0000-0003-0854-8559","observed_orcids":["https://orcid.org/0000-0003-0854-8559"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinyu Liu","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5055988506"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"],"apc_list":{"value":1500,"currency":"USD","value_usd":1500},"apc_paid":{"value":1500,"currency":"USD","value_usd":1500},"fwci":0.4527,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.47303978,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"8","issue":null,"first_page":"100065","last_page":"100065"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9628999829292297,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9628999829292297,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.035999998450279236,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-power-devices","display_name":"GaN power devices","score":0.9810000061988831},{"id":"https://openalex.org/keywords/surface-traps","display_name":"surface traps","score":0.7129999995231628},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.8100000023841858},{"id":"https://openalex.org/keywords/threshold-voltage-instability","display_name":"threshold voltage instability","score":0.8460000157356262},{"id":"https://openalex.org/keywords/gate-drain-capacitance","display_name":"gate-drain capacitance","score":0.9470000267028809},{"id":"https://openalex.org/keywords/dynamic-on-resistance","display_name":"dynamic on-resistance","score":0.824999988079071},{"id":"https://openalex.org/keywords/off-state-stress","display_name":"off-state stress","score":0.6840000152587891},{"id":"https://openalex.org/keywords/electron-trapping","display_name":"electron trapping","score":0.6840000152587891},{"id":"https://openalex.org/keywords/hole-traps","display_name":"hole traps","score":0.781000018119812},{"id":"https://openalex.org/keywords/device-degradation","display_name":"device degradation","score":0.5509999990463257}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7460652589797974},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7107314467430115},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.5350426435470581},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.46054691076278687},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.41427135467529297},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1865083873271942},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15840357542037964},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07900959253311157},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/j.pedc.2024.100065","doi":"https://doi.org/10.1016/j.pedc.2024.100065","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.pedc.2024.100065","pdf_url":null,"source":{"id":"https://openalex.org/S4210224393","display_name":"Power Electronic Devices and Components","issn_l":"2772-3704","issn":["2772-3704"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Power Electronic Devices and Components","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:74f388b83e624ec6af9bfc7513beebb9","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/74f388b83e624ec6af9bfc7513beebb9","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Power Electronic Devices and Components, Vol 8, Iss , Pp 100065- (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1016/j.pedc.2024.100065","doi":"https://doi.org/10.1016/j.pedc.2024.100065","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.pedc.2024.100065","pdf_url":null,"source":{"id":"https://openalex.org/S4210224393","display_name":"Power Electronic Devices and Components","issn_l":"2772-3704","issn":["2772-3704"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Power Electronic Devices and Components","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":54,"referenced_works":["https://openalex.org/W1518186876","https://openalex.org/W1669917242","https://openalex.org/W1895533058","https://openalex.org/W1971889523","https://openalex.org/W1974663429","https://openalex.org/W1977450210","https://openalex.org/W1994553873","https://openalex.org/W2005037605","https://openalex.org/W2005472821","https://openalex.org/W2013657721","https://openalex.org/W2016425570","https://openalex.org/W2016580874","https://openalex.org/W2039219095","https://openalex.org/W2064629748","https://openalex.org/W2065381563","https://openalex.org/W2066898362","https://openalex.org/W2077303724","https://openalex.org/W2112559006","https://openalex.org/W2116086731","https://openalex.org/W2118558744","https://openalex.org/W2122464392","https://openalex.org/W2129662607","https://openalex.org/W2141966815","https://openalex.org/W2163194368","https://openalex.org/W2194812310","https://openalex.org/W2311631879","https://openalex.org/W2325968874","https://openalex.org/W2499700625","https://openalex.org/W2507414086","https://openalex.org/W2525023663","https://openalex.org/W2528686560","https://openalex.org/W2623811665","https://openalex.org/W2768682506","https://openalex.org/W2773253363","https://openalex.org/W2788013722","https://openalex.org/W2885466650","https://openalex.org/W2896331379","https://openalex.org/W2917100518","https://openalex.org/W2967945770","https://openalex.org/W2982654002","https://openalex.org/W2998798429","https://openalex.org/W3006035865","https://openalex.org/W3012121438","https://openalex.org/W3045485671","https://openalex.org/W3092199139","https://openalex.org/W3124860702","https://openalex.org/W3161601337","https://openalex.org/W3213632204","https://openalex.org/W4200374064","https://openalex.org/W4249603838","https://openalex.org/W4284712222","https://openalex.org/W4285186159","https://openalex.org/W6639693729","https://openalex.org/W6748590580"],"related_works":["https://openalex.org/W2485845310","https://openalex.org/W2575367312","https://openalex.org/W2485583506","https://openalex.org/W2791738282","https://openalex.org/W3117173317","https://openalex.org/W2588824872","https://openalex.org/W4284897614","https://openalex.org/W2952990443","https://openalex.org/W2041714088","https://openalex.org/W2909230005"],"abstract_inverted_index":{"This":[0],"study":[1],"utilized":[2],"a":[3,127],"rapid":[4,120],"detection":[5],"technique,":[6],"Isothermal":[7],"Capture":[8],"Transient":[9],"Spectroscopy":[10],"(ICTS),":[11],"to":[12,18],"identify":[13],"and":[14,22,25,42,64,77,96,134],"evaluate":[15],"defects":[16],"related":[17],"GaN":[19,37,104,132],"device":[20,50],"surface":[21],"buffer":[23,105],"traps,":[24,95],"investigated":[26],"the":[27,33,85,103,109,117],"mechanisms":[28],"by":[29],"which":[30],"they":[31],"affect":[32],"dynamic":[34,65,110],"performance":[35],"of":[36,87,116,123],"based":[38],"devices.":[39,118],"Interface":[40],"states":[41,76],"dielectric":[43],"bulk":[44,78],"traps":[45,101],"were":[46,70],"analyzed,":[47],"unveiling":[48],"distinctive":[49],"behavior":[51],"under":[52],"positive":[53],"gate":[54,81],"pulse-biased":[55,82],"ICTS.":[56],"The":[57,119],"observed":[58],"S-shaped":[59],"threshold":[60],"voltage":[61],"(VTH)":[62],"instability":[63],"gate-drain":[66],"capacitance":[67],"(CGD)":[68],"issues":[69],"directly":[71],"associated":[72],"with":[73],"these":[74],"interface":[75],"traps.":[79],"Negative":[80],"ICTS":[83],"revealed":[84],"presence":[86],"logarithmic":[88],"electron":[89,94],"trapping":[90],"originating":[91],"from":[92],"extended":[93],"spatial":[97],"wide":[98],"distributed":[99],"hole":[100],"within":[102],"layer,":[106],"significantly":[107],"impacting":[108],"on-resistance":[111],"(RON)":[112],"during":[113],"off-state":[114],"stress":[115],"assessment":[121],"capabilities":[122],"this":[124],"method":[125],"provide":[126],"valuable":[128],"tool":[129],"for":[130],"optimizing":[131],"epitaxy":[133],"manufacturing":[135],"processes.":[136]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2026-10-29T09:56:32.521200","created_date":"2024-03-25T00:00:00"}