{"id":"https://openalex.org/W4392778033","doi":"https://doi.org/10.26599/jac.2024.9220852","title":"Depolarization mitigated in ferroelectric Hf 0.5Zr 0.5O 2 ultrathin films (< 5 nm) on Si substrate by interface engineering","display_name":"Depolarization mitigated in ferroelectric Hf 0.5Zr 0.5O 2 ultrathin films (< 5 nm) on Si substrate by interface engineering","publication_year":2024,"publication_date":"2024-03-01","ids":{"openalex":"https://openalex.org/W4392778033","doi":"https://doi.org/10.26599/jac.2024.9220852"},"language":"en","primary_location":{"id":"doi:10.26599/jac.2024.9220852","doi":"https://doi.org/10.26599/jac.2024.9220852","is_oa":true,"landing_page_url":"https://doi.org/10.26599/jac.2024.9220852","pdf_url":"https://sciopen.com/article_pdf/1747141625174884353.pdf","source":{"id":"https://openalex.org/S2764962576","display_name":"Journal of Advanced Ceramics","issn_l":"2226-4108","issn":["2226-4108","2227-8508"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-a","jufo-2","norway-1","oarl","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Advanced Ceramics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://sciopen.com/article_pdf/1747141625174884353.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009455006","display_name":"Se Hyun Kim","orcid":"https://orcid.org/0000-0003-4908-8907","observed_orcids":["https://orcid.org/0000-0003-4908-8907"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Se Hyun Kim","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100393966","display_name":"Young H. Lee","orcid":"https://orcid.org/0000-0001-8485-6807","observed_orcids":["https://orcid.org/0000-0001-8485-6807"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Younghwan Lee","raw_affiliation_strings":["Research Institute of Advanced Materials,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Advanced Materials,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100436252","display_name":"Dong Hyun Lee","orcid":"https://orcid.org/0000-0002-2570-2485","observed_orcids":["https://orcid.org/0000-0002-2570-2485"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong Hyun Lee","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060308156","display_name":"Geun Hyeong Park","orcid":"https://orcid.org/0000-0002-2520-6166","observed_orcids":["https://orcid.org/0000-0002-2520-6166"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Geun Hyeong Park","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108908340","display_name":"Hyun Woo Jeong","orcid":"https://orcid.org/0009-0004-5226-2990","observed_orcids":["https://orcid.org/0009-0004-5226-2990"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Woo Jeong","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101983460","display_name":"Kun Yang","orcid":"https://orcid.org/0000-0003-1700-9688","observed_orcids":["https://orcid.org/0000-0003-1700-9688","https://orcid.org/0000-0002-0221-3419"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kun Yang","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103105494","display_name":"Yong Hyeon Cho","orcid":"https://orcid.org/0009-0008-3701-9369","observed_orcids":["https://orcid.org/0009-0008-3701-9369"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong Hyeon Cho","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034181938","display_name":"Young Yong Kim","orcid":"https://orcid.org/0000-0001-6102-9518","observed_orcids":["https://orcid.org/0000-0001-6102-9518"]},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]},{"id":"https://openalex.org/I4387152139","display_name":"Pohang Accelerator Laboratory","ror":"https://ror.org/02gntzb40","country_code":"KR","type":"facility","lineage":["https://openalex.org/I123900574","https://openalex.org/I2801339556","https://openalex.org/I4387152098","https://openalex.org/I4387152139"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young Yong Kim","raw_affiliation_strings":["Pohang Accelerator Laboratory,KOREA, REPUBLIC OF. Pohang University of Science & Technology,KOREA, REPUBLIC OF"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang Accelerator Laboratory,KOREA, REPUBLIC OF. Pohang University of Science & Technology,KOREA, REPUBLIC OF","institution_ids":["https://openalex.org/I123900574","https://openalex.org/I4387152139"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074806474","display_name":"Min Hyuk Park","orcid":"https://orcid.org/0000-0001-6333-2668","observed_orcids":["https://orcid.org/0000-0001-6333-2668"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min Hyuk Park","raw_affiliation_strings":["Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,Research Institute of Advanced Materials,College of Engineering,Seoul National University, 08826,Inter-university Semiconductor Research Center,College of Engineering,Seoul National University, 08826,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering,College of Engineering,Seoul National University, 08826,Research Institute of Advanced Materials,College of Engineering,Seoul National University, 08826,Inter-university Semiconductor Research Center,College of Engineering,Seoul National University, 08826,","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2200,"currency":"EUR","value_usd":2372},"apc_paid":{"value":2200,"currency":"EUR","value_usd":2372},"fwci":0.3942,"has_fulltext":true,"cited_by_count":4,"citation_normalized_percentile":{"value":0.47297233,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":"13","issue":"3","first_page":"282","last_page":"292"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hf0-5zr0-5o2","display_name":"Hf0.5Zr0.5O2","score":0.9599999785423279},{"id":"https://openalex.org/keywords/interface-engineering","display_name":"interface engineering","score":0.7009999752044678},{"id":"https://openalex.org/keywords/depolarization-field","display_name":"depolarization field","score":0.7649999856948853},{"id":"https://openalex.org/keywords/interface-trap-density","display_name":"interface trap density","score":0.8769999742507935},{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.8970000147819519},{"id":"https://openalex.org/keywords/remanent-polarization","display_name":"remanent polarization","score":0.8610000014305115},{"id":"https://openalex.org/keywords/switching-endurance","display_name":"switching endurance","score":0.8619999885559082},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.7919999957084656},{"id":"https://openalex.org/keywords/ferroelectric-memory","display_name":"ferroelectric memory","score":0.656000018119812},{"id":"https://openalex.org/keywords/silicon-substrate","display_name":"silicon substrate","score":0.4699999988079071}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7562105655670166},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6611103415489197},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.5401571989059448},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4524279534816742},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.44221585988998413},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.4238429665565491},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4017717242240906},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3948262929916382},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.29520055651664734},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2613644599914551},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08849743008613586},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.26599/jac.2024.9220852","doi":"https://doi.org/10.26599/jac.2024.9220852","is_oa":true,"landing_page_url":"https://doi.org/10.26599/jac.2024.9220852","pdf_url":"https://sciopen.com/article_pdf/1747141625174884353.pdf","source":{"id":"https://openalex.org/S2764962576","display_name":"Journal of Advanced Ceramics","issn_l":"2226-4108","issn":["2226-4108","2227-8508"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-a","jufo-2","norway-1","oarl","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Advanced Ceramics","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:85af6f84cd88455aa281563f96ad9a66","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/85af6f84cd88455aa281563f96ad9a66","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Journal of Advanced Ceramics, Vol 13, Iss 3, Pp 282-292 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.26599/jac.2024.9220852","doi":"https://doi.org/10.26599/jac.2024.9220852","is_oa":true,"landing_page_url":"https://doi.org/10.26599/jac.2024.9220852","pdf_url":"https://sciopen.com/article_pdf/1747141625174884353.pdf","source":{"id":"https://openalex.org/S2764962576","display_name":"Journal of Advanced Ceramics","issn_l":"2226-4108","issn":["2226-4108","2227-8508"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-a","jufo-2","norway-1","oarl","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Advanced Ceramics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1028099167","display_name":null,"funder_award_id":"NRF-2022R1A6A3A01086832","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G1905581522","display_name":null,"funder_award_id":"2022M3F3A2A01073562","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G6334847208","display_name":null,"funder_award_id":"2021M3F3A2A02037889","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G6529645191","display_name":null,"funder_award_id":"2020R1C1C1008193","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G6641175007","display_name":null,"funder_award_id":"2021M3F3A2A02037889","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G6862660671","display_name":null,"funder_award_id":"2020R1C1C1008193","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G7605257381","display_name":null,"funder_award_id":"2022M3F3A2A01073562","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320321282","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4392778033.pdf","grobid_xml":"https://content.openalex.org/works/W4392778033.grobid-xml"},"referenced_works_count":64,"referenced_works":["https://openalex.org/W1129967587","https://openalex.org/W1625170149","https://openalex.org/W1981342877","https://openalex.org/W2003645630","https://openalex.org/W2016267613","https://openalex.org/W2024600253","https://openalex.org/W2063268434","https://openalex.org/W2094854790","https://openalex.org/W2114118400","https://openalex.org/W2116547927","https://openalex.org/W2130964707","https://openalex.org/W2135297784","https://openalex.org/W2155968399","https://openalex.org/W2158012362","https://openalex.org/W2160395018","https://openalex.org/W2416643905","https://openalex.org/W2500525874","https://openalex.org/W2606793363","https://openalex.org/W2625135835","https://openalex.org/W2769364246","https://openalex.org/W2791916343","https://openalex.org/W2799370803","https://openalex.org/W2799717108","https://openalex.org/W2808242331","https://openalex.org/W2889470051","https://openalex.org/W2908727453","https://openalex.org/W2912075450","https://openalex.org/W2949406922","https://openalex.org/W2950288147","https://openalex.org/W2969589937","https://openalex.org/W3020220880","https://openalex.org/W3023774999","https://openalex.org/W3028511488","https://openalex.org/W3032180121","https://openalex.org/W3095256020","https://openalex.org/W3103192529","https://openalex.org/W3109164992","https://openalex.org/W3113361193","https://openalex.org/W3113827609","https://openalex.org/W3119329263","https://openalex.org/W3127097655","https://openalex.org/W3137219060","https://openalex.org/W3164014422","https://openalex.org/W3182791503","https://openalex.org/W3186271703","https://openalex.org/W3187544555","https://openalex.org/W3195699499","https://openalex.org/W3210184942","https://openalex.org/W3212300091","https://openalex.org/W4200208965","https://openalex.org/W4221025951","https://openalex.org/W4226073126","https://openalex.org/W4226077336","https://openalex.org/W4229055935","https://openalex.org/W4307965995","https://openalex.org/W4310957099","https://openalex.org/W4312223133","https://openalex.org/W4318701095","https://openalex.org/W4319303069","https://openalex.org/W4319349154","https://openalex.org/W4323353660","https://openalex.org/W4324359166","https://openalex.org/W4367841360","https://openalex.org/W4380319890"],"related_works":["https://openalex.org/W2291334276","https://openalex.org/W7123345106","https://openalex.org/W3112558661","https://openalex.org/W7117890559","https://openalex.org/W7221116057","https://openalex.org/W7160869776","https://openalex.org/W3200686938","https://openalex.org/W4205919369","https://openalex.org/W4415307465","https://openalex.org/W4416566026"],"abstract_inverted_index":{"(Hf,Zr)O2":[0,50,87,191],"offers":[1],"considerable":[2],"potential":[3],"for":[4,154,202],"next-generation":[5,203],"semiconductor":[6,204],"devices":[7,205],"owing":[8],"to":[9,21,60,79,106,184],"its":[10],"nonvolatile":[11],"spontaneous":[12],"polarization":[13,150],"at":[14],"the":[15,29,68,119,130,137,143,172,176,186,194,200],"nanoscale.":[16],"However,":[17],"scaling":[18],"this":[19],"material":[20],"sub-5":[22,90],"nm":[23,91,157],"thickness":[24],"poses":[25],"several":[26],"challenges,":[27],"including":[28],"formation":[30],"of":[31,67,86,101,122,151,190],"an":[32],"interfacial":[33,44,97,115,133,169],"layer":[34,45,116,134,170],"and":[35,64,83,117,142,175,188,197],"high":[36,61],"trap":[37,140],"concentration.":[38],"In":[39],"particular,":[40],"a":[41,56,77,95,102,112,148,155,166,181],"low-k":[42],"SiO2":[43],"is":[46],"naturally":[47],"formed":[48],"when":[49],"films":[51,88],"are":[52],"directly":[53],"grown":[54,192],"on":[55,193],"Si":[57,177,195],"substrate,":[58],"leading":[59],"depolarization":[62,144],"fields":[63],"rapid":[65],"reduction":[66],"remanent":[69],"polarization.":[70],"To":[71],"address":[72],"these":[73],"issues,":[74],"we":[75,162],"conducted":[76],"study":[78],"significantly":[80],"improve":[81],"ferroelectricity":[82,187],"switching":[84],"endurance":[85],"with":[89,124,206],"thicknesses":[92],"by":[93],"inserting":[94,165],"TiO2":[96,114,132,168],"layer.":[98],"The":[99],"deposition":[100,109],"Ti":[103],"film":[104,108,174],"prior":[105],"Hf0.5Zr0.5O2":[107,123,159,173],"resulted":[110],"in":[111,147],"high-k":[113,131,167],"prevented":[118],"direct":[120],"contact":[121],"Si.":[125],"Our":[126],"findings":[127],"show":[128],"that":[129,164],"can":[135,198],"reduce":[136],"SiO2/Si":[138],"interface":[139],"density":[141],"field,":[145],"resulting":[146],"switchable":[149],"60.2":[152],"\u03bcC/cm2":[153],"5":[156],"thick":[158],"film.":[160],"Therefore,":[161],"propose":[163],"between":[171],"substrate":[178,196],"may":[179],"offer":[180],"promising":[182],"solution":[183],"enhancing":[185],"reliability":[189],"pave":[199],"way":[201],"improved":[207],"performance.":[208]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2024-03-14T00:00:00"}