{"id":"https://openalex.org/W4392024722","doi":"https://doi.org/10.1109/mems58180.2024.10439318","title":"4H-SiC Beam Resonators with Tailored Local Zero TCF","display_name":"4H-SiC Beam Resonators with Tailored Local Zero TCF","publication_year":2024,"publication_date":"2024-01-21","ids":{"openalex":"https://openalex.org/W4392024722","doi":"https://doi.org/10.1109/mems58180.2024.10439318"},"language":"en","primary_location":{"id":"doi:10.1109/mems58180.2024.10439318","doi":"https://doi.org/10.1109/mems58180.2024.10439318","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/mems58180.2024.10439318","pdf_url":null,"source":{"id":"https://openalex.org/S4210233918","display_name":"IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","issn_l":"1084-6999","issn":["1084-6999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012192098","display_name":"Yaoyao Long","orcid":"https://orcid.org/0000-0001-5737-4095","observed_orcids":["https://orcid.org/0000-0001-5737-4095"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yaoyao Long","raw_affiliation_strings":["Georgia Institute of Technology, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101738057","display_name":"Zhenming Liu","orcid":"https://orcid.org/0000-0003-1132-138X","observed_orcids":["https://orcid.org/0000-0003-1132-138X"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhenming Liu","raw_affiliation_strings":["Georgia Institute of Technology, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113262919","display_name":"Xinyu Jiang","orcid":"https://orcid.org/0009-0007-8520-6751","observed_orcids":["https://orcid.org/0009-0007-8520-6751"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xinyu Jiang","raw_affiliation_strings":["Georgia Institute of Technology, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081523432","display_name":"Farrokh Ayazi","orcid":"https://orcid.org/0000-0002-4539-7393","observed_orcids":["https://orcid.org/0000-0002-4539-7393"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Farrokh Ayazi","raw_affiliation_strings":["Georgia Institute of Technology, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":2.2754,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.84720201,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1067","last_page":"1070"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.8598999977111816,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.8598999977111816,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.1168999969959259,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0044999998062849045,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9229999780654907},{"id":"https://openalex.org/keywords/silicon-carbide-on-insulator","display_name":"silicon carbide on insulator","score":0.734000027179718},{"id":"https://openalex.org/keywords/temperature-coefficient-of-frequency","display_name":"temperature coefficient of frequency","score":0.8510000109672546},{"id":"https://openalex.org/keywords/axial-stress","display_name":"axial stress","score":0.625},{"id":"https://openalex.org/keywords/beam-aspect-ratio","display_name":"beam aspect ratio","score":0.8560000061988831}],"concepts":[{"id":"https://openalex.org/C97126364","wikidata":"https://www.wikidata.org/wiki/Q349669","display_name":"Resonator","level":2,"score":0.7909892797470093},{"id":"https://openalex.org/C2780813799","wikidata":"https://www.wikidata.org/wiki/Q3274237","display_name":"Zero (linguistics)","level":2,"score":0.6381099224090576},{"id":"https://openalex.org/C168834538","wikidata":"https://www.wikidata.org/wiki/Q3705329","display_name":"Beam (structure)","level":2,"score":0.5568957328796387},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5228215456008911},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43040239810943604},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.382673442363739},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33212846517562866},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3285519480705261},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.295931875705719},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16553181409835815},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mems58180.2024.10439318","doi":"https://doi.org/10.1109/mems58180.2024.10439318","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/mems58180.2024.10439318","pdf_url":null,"source":{"id":"https://openalex.org/S4210233918","display_name":"IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","issn_l":"1084-6999","issn":["1084-6999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"score":0.550000011920929,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320338295","display_name":"Army Research Laboratory","ror":"https://ror.org/011hc8f90"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1899063697","https://openalex.org/W2018806435","https://openalex.org/W2044761720","https://openalex.org/W2054014643","https://openalex.org/W2105093937","https://openalex.org/W2107391746","https://openalex.org/W2114008742","https://openalex.org/W2117977707","https://openalex.org/W2538382077","https://openalex.org/W2913051837","https://openalex.org/W2913666503","https://openalex.org/W2995160353","https://openalex.org/W3165167694","https://openalex.org/W4379382676","https://openalex.org/W4379983194","https://openalex.org/W4400006568"],"related_works":["https://openalex.org/W4399882060","https://openalex.org/W6987147419","https://openalex.org/W2115954645","https://openalex.org/W325392785","https://openalex.org/W2121341028","https://openalex.org/W3120795149","https://openalex.org/W1981645680","https://openalex.org/W329376628","https://openalex.org/W2969784560","https://openalex.org/W2035868474"],"abstract_inverted_index":{"For":[0],"the":[1,32,36,40,58,62,68,76,84,88,95],"first":[2,97],"time,":[3],"this":[4,92],"paper":[5],"unveils":[6],"doubly-clamped":[7],"beam":[8,38,77],"resonators":[9],"in":[10,67],"monocrystalline":[11],"4H-silicon":[12],"carbide":[13,46],"(4H-SiC)":[14],"with":[15,51],"a":[16,52],"tailorable":[17],"local":[18],"zero":[19],"temperature":[20],"coefficient":[21],"of":[22,35,43,70,87],"frequency":[23],"(TCF).":[24],"This":[25],"innovation":[26],"utilizes":[27],"axial":[28],"stress":[29],"to":[30,60],"counteract":[31],"temperature-driven":[33],"softening":[34],"4H-SiC":[37,89],"using":[39],"layered":[41],"structure":[42],"4H":[44],"silicon":[45,53],"on":[47],"insulator":[48],"(SiCOI)":[49],"substrate":[50],"handle":[54],"layer.":[55],"We":[56,80],"demonstrate":[57],"ability":[59],"define":[61],"TCF":[63],"turnover":[64],"point":[65],"anywhere":[66],"range":[69],"\u221220":[71],"~":[72],"100\u2103":[73],"by":[74],"tailoring":[75],"aspect":[78],"ratio.":[79],"also":[81],"delve":[82],"into":[83],"stability":[85],"attributes":[86],"microresonator,":[90],"charting":[91],"terrain":[93],"for":[94],"very":[96],"time.":[98]},"counts_by_year":[{"year":2024,"cited_by_count":3}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2024-02-23T00:00:00"}