{"id":"https://openalex.org/W4391925245","doi":"https://doi.org/10.1016/j.jsamd.2024.100692","title":"Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage","display_name":"Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage","publication_year":2024,"publication_date":"2024-02-19","ids":{"openalex":"https://openalex.org/W4391925245","doi":"https://doi.org/10.1016/j.jsamd.2024.100692"},"language":"en","primary_location":{"id":"doi:10.1016/j.jsamd.2024.100692","doi":"https://doi.org/10.1016/j.jsamd.2024.100692","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.jsamd.2024.100692","pdf_url":null,"source":{"id":"https://openalex.org/S2764990209","display_name":"Journal of Science Advanced Materials and Devices","issn_l":"2468-2179","issn":["2468-2179","2468-2284"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","norway-1","poland-20","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Science: Advanced Materials and Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1016/j.jsamd.2024.100692","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072458378","display_name":"Shuxiang Sun","orcid":"https://orcid.org/0000-0003-0217-3936","observed_orcids":["https://orcid.org/0000-0003-0217-3936"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuxiang Sun","raw_affiliation_strings":["China and State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, Chongqing, 401331, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China and State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]},{"raw_affiliation_string":"Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, Chongqing, 401331, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049244203","display_name":"Xintong Xie","orcid":"https://orcid.org/0000-0003-0488-1637","observed_orcids":["https://orcid.org/0000-0003-0488-1637"]},"institutions":[{"id":"https://openalex.org/I4210131125","display_name":"Huanghuai University","ror":"https://ror.org/02k92ks68","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131125"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xintong Xie","raw_affiliation_strings":["Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China","institution_ids":["https://openalex.org/I4210131125"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029804956","display_name":"Pengfei Zhang","orcid":"https://orcid.org/0000-0002-4226-1394","observed_orcids":["https://orcid.org/0000-0002-4226-1394","https://orcid.org/0000-0003-2914-7332"]},"institutions":[{"id":"https://openalex.org/I4210131125","display_name":"Huanghuai University","ror":"https://ror.org/02k92ks68","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131125"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Pengfei Zhang","raw_affiliation_strings":["Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China","institution_ids":["https://openalex.org/I4210131125"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086848220","display_name":"Zhijia Zhao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210131125","display_name":"Huanghuai University","ror":"https://ror.org/02k92ks68","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131125"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhijia Zhao","raw_affiliation_strings":["Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China","institution_ids":["https://openalex.org/I4210131125"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033753667","display_name":"Jie Wei","orcid":"https://orcid.org/0000-0001-6080-1748","observed_orcids":["https://orcid.org/0000-0001-6080-1748"]},"institutions":[{"id":"https://openalex.org/I4210131125","display_name":"Huanghuai University","ror":"https://ror.org/02k92ks68","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131125"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jie Wei","raw_affiliation_strings":["Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China","institution_ids":["https://openalex.org/I4210131125"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006904369","display_name":"Xiaorong Luo","orcid":"https://orcid.org/0000-0001-5973-3258","observed_orcids":["https://orcid.org/0000-0001-5973-3258"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210131125","display_name":"Huanghuai University","ror":"https://ror.org/02k92ks68","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131125"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiaorong Luo","raw_affiliation_strings":["China and State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China and State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]},{"raw_affiliation_string":"Henan Provincial Key Laboratory of Intelligent Lighting and School of Electronic Information, Huanghuai University, Zhumadian, 463000, China","institution_ids":["https://openalex.org/I4210131125"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5006904369"],"corresponding_institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210131125","https://openalex.org/I4391767659"],"apc_list":{"value":1300,"currency":"USD","value_usd":1300},"apc_paid":{"value":1300,"currency":"USD","value_usd":1300},"fwci":2.3764,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.91170384,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"9","issue":"2","first_page":"100692","last_page":"100692"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8827999830245972,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8827999830245972,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.07620000094175339,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.028200000524520874,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.9589999914169312},{"id":"https://openalex.org/keywords/single-event-transients","display_name":"single event transients","score":0.8550000190734863},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.8820000290870667},{"id":"https://openalex.org/keywords/algan-back-barrier","display_name":"AlGaN back barrier","score":0.843999981880188},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"impact ionization","score":0.9459999799728394},{"id":"https://openalex.org/keywords/electron-hole-recombination","display_name":"electron-hole recombination","score":0.9570000171661377},{"id":"https://openalex.org/keywords/linear-energy-transfer","display_name":"linear energy transfer","score":0.7160000205039978},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.7950000166893005},{"id":"https://openalex.org/keywords/saturation-drain-current","display_name":"saturation drain current","score":0.8650000095367432},{"id":"https://openalex.org/keywords/radiation-hardness","display_name":"radioresistance","score":0.45100000500679016}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8906170129776001},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7695227861404419},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.6709132194519043},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6406975388526917},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.5608261227607727},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5235704779624939},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.49685290455818176},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4603526294231415},{"id":"https://openalex.org/C2779833192","wikidata":"https://www.wikidata.org/wiki/Q17015866","display_name":"Barrier layer","level":3,"score":0.4577961564064026},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.45192950963974},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4411768615245819},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.4408056139945984},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4400213360786438},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.37255334854125977},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3432241380214691},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23935282230377197},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23075145483016968},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13783055543899536},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12366625666618347},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08750230073928833},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/j.jsamd.2024.100692","doi":"https://doi.org/10.1016/j.jsamd.2024.100692","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.jsamd.2024.100692","pdf_url":null,"source":{"id":"https://openalex.org/S2764990209","display_name":"Journal of Science Advanced Materials and Devices","issn_l":"2468-2179","issn":["2468-2179","2468-2284"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","norway-1","poland-20","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Science: Advanced Materials and Devices","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:0919fb2b6cc443e898c47ea37a59cfda","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/0919fb2b6cc443e898c47ea37a59cfda","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100692- (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1016/j.jsamd.2024.100692","doi":"https://doi.org/10.1016/j.jsamd.2024.100692","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.jsamd.2024.100692","pdf_url":null,"source":{"id":"https://openalex.org/S2764990209","display_name":"Journal of Science Advanced Materials and Devices","issn_l":"2468-2179","issn":["2468-2179","2468-2284"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","norway-1","poland-20","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Science: Advanced Materials and Devices","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W563951987","https://openalex.org/W2090870983","https://openalex.org/W2329138937","https://openalex.org/W2416679725","https://openalex.org/W2563357427","https://openalex.org/W2585964977","https://openalex.org/W2744131221","https://openalex.org/W2775997051","https://openalex.org/W2908476896","https://openalex.org/W2963484169","https://openalex.org/W2988905335","https://openalex.org/W3033324558","https://openalex.org/W3092421654","https://openalex.org/W3119806152","https://openalex.org/W3127738710","https://openalex.org/W3162020680","https://openalex.org/W3189335924","https://openalex.org/W4200462435","https://openalex.org/W4220824721","https://openalex.org/W4288074013","https://openalex.org/W4289515783","https://openalex.org/W4306321529","https://openalex.org/W4312230116","https://openalex.org/W4312737429","https://openalex.org/W4313550150","https://openalex.org/W4321230823","https://openalex.org/W4323075739","https://openalex.org/W4367598161","https://openalex.org/W4386163332","https://openalex.org/W6809437998","https://openalex.org/W6846163715"],"related_works":["https://openalex.org/W4402659876","https://openalex.org/W4404393173","https://openalex.org/W2040184433","https://openalex.org/W2321481978","https://openalex.org/W2333697170","https://openalex.org/W2223454110","https://openalex.org/W1934634412","https://openalex.org/W1998137512","https://openalex.org/W7147396397","https://openalex.org/W2396149622"],"abstract_inverted_index":{"A":[0],"novel":[1],"AlGaN/GaN":[2],"HEMT":[3,179],"is":[4,108,167,192],"proposed":[5],"to":[6,84,110,170,195],"improve":[7],"its":[8],"single":[9],"event":[10],"transient":[11],"(SET)":[12],"effect":[13],"and":[14,25,47,56,102,117,149,189],"breakdown":[15,74],"characteristics.":[16],"The":[17,153],"device":[18],"features":[19],"an":[20],"AlGaN":[21,94],"back":[22,32,95],"barrier":[23,33,96],"layer":[24,34,134],"a":[26,181],"buried":[27],"P-GaN":[28,38],"island":[29,39],"in":[30,99,131],"the":[31,37,43,53,63,73,80,86,93,100,111,123,129,132,141,146,159,165,177,190,204],"(BP-HEMT).":[35],"First,":[36],"not":[40,69],"only":[41,70],"modulates":[42],"electric":[44],"field":[45],"distribution":[46],"reduces":[48],"impact":[49],"ionization":[50],"at":[51,145],"both":[52,144],"blocking":[54,147],"state":[55,148],"after":[57,89,150],"ion":[58,90,137,151],"strike,":[59],"but":[60,77],"also":[61,78],"increases":[62,72],"hole-electron":[64],"recombination":[65],"rate.":[66],"Therefore,":[67],"it":[68,107,126],"effectively":[71,127],"voltage":[75],"(BV),":[76],"improves":[79],"anti-SET":[81],"performance":[82],"owing":[83],"decreasing":[85],"current":[87,115,163],"peak":[88,161],"strike.":[91,152],"Second,":[92],"confines":[97],"electrons":[98,130],"channel,":[101],"thus,":[103],"on":[104,122],"one":[105],"hand,":[106,125],"beneficial":[109],"high":[112],"saturation":[113],"drain":[114,142,162],"(Id,sat)":[116],"low":[118],"on-state":[119],"resistance":[120],"(Ron);":[121],"other":[124],"prevents":[128],"buffer":[133],"introduced":[135],"by":[136,207],"strike":[138],"from":[139,173,198],"reaching":[140],"electrode":[143],"TCAD":[154],"simulation":[155],"results":[156],"show":[157],"that":[158],"SET":[160],"of":[164,176,186],"BP-HEMT":[166],"significantly":[168,193],"dropped":[169],"0.49":[171],"A/mm":[172,175],"4.17":[174],"conventional":[178],"with":[180],"linear":[182],"energy":[183],"transfer":[184],"(LET)":[185],"0.6":[187],"pC/\u03bcm,":[188],"BV":[191],"increased":[194],"1318.3":[196],"V":[197],"175.2":[199],"V,":[200],"as":[201,203],"well":[202],"Ron":[205],"decreases":[206],"11.1%.":[208]},"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":4}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2024-02-20T00:00:00"}