{"id":"https://openalex.org/W4391662914","doi":"https://doi.org/10.1149/ma2023-02291464mtgabs","title":"(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching","display_name":"(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching","publication_year":2023,"publication_date":"2023-12-22","ids":{"openalex":"https://openalex.org/W4391662914","doi":"https://doi.org/10.1149/ma2023-02291464mtgabs"},"language":"en","primary_location":{"id":"doi:10.1149/ma2023-02291464mtgabs","doi":"https://doi.org/10.1149/ma2023-02291464mtgabs","is_oa":false,"landing_page_url":"https://doi.org/10.1149/ma2023-02291464mtgabs","pdf_url":null,"source":{"id":"https://openalex.org/S4210168594","display_name":"ECS Meeting Abstracts","issn_l":"1091-8213","issn":["1091-8213","2151-2035","2151-2043","2152-8365"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Meeting Abstracts","raw_type":"journal-article"},"volume":null,"type":"conference-abstract","is_traditional":false,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024008821","display_name":"Nicholas J. Chittock","orcid":"https://orcid.org/0000-0003-0541-0175","observed_orcids":["https://orcid.org/0000-0003-0541-0175"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Nicholas John Chittock","raw_affiliation_strings":["Eindhoven University of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Eindhoven University of Technology","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018346857","display_name":"W. M. M. Kessels","orcid":"https://orcid.org/0000-0002-7630-8226","observed_orcids":["https://orcid.org/0000-0002-7630-8226"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Wilhelmus M. M. (Erwin) Kessels","raw_affiliation_strings":["Eindhoven University of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Eindhoven University of Technology","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062788432","display_name":"Harm C. M. Knoops","orcid":"https://orcid.org/0000-0003-2284-4477","observed_orcids":["https://orcid.org/0000-0003-2284-4477"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Harm Knoops","raw_affiliation_strings":["Eindhoven University of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Eindhoven University of Technology","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064064108","display_name":"Adriaan J. M. Mackus","orcid":"https://orcid.org/0000-0001-6944-9867","observed_orcids":["https://orcid.org/0000-0001-6944-9867"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Adrie Mackus","raw_affiliation_strings":["Eindhoven University of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Eindhoven University of Technology","institution_ids":["https://openalex.org/I83019370"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I83019370"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"MA2023-02","issue":"29","first_page":"1464","last_page":"1464"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.8335000276565552,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.8335000276565552,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.13819999992847443,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10642","display_name":"Atmospheric-Pressure Plasma Applications","score":0.006200000178068876,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-layer-etching","display_name":"atomic layer etching","score":0.9629999995231628},{"id":"https://openalex.org/keywords/plasma-fluorination","display_name":"plasma fluorination","score":0.8650000095367432},{"id":"https://openalex.org/keywords/ligand-exchange","display_name":"ligand exchange","score":0.9679999947547913},{"id":"https://openalex.org/keywords/acetylacetone","display_name":"acetylacetone","score":0.953000009059906},{"id":"https://openalex.org/keywords/hexafluoroacetylacetone","display_name":"hexafluoroacetylacetone","score":0.9789999723434448},{"id":"https://openalex.org/keywords/surface-cleaning","display_name":"surface cleaning","score":0.7630000114440918},{"id":"https://openalex.org/keywords/surface-smoothing","display_name":"surface smoothing","score":0.7089999914169312},{"id":"https://openalex.org/keywords/alumina","display_name":"alumina","score":0.8169999718666077},{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.9589999914169312},{"id":"https://openalex.org/keywords/aluminum-nitride","display_name":"aluminum nitride","score":0.9909999966621399},{"id":"https://openalex.org/keywords/gan","display_name":"GaN","score":0.9990000128746033},{"id":"https://openalex.org/keywords/zinc-oxide","display_name":"zinc oxide","score":0.9980000257492065},{"id":"https://openalex.org/keywords/semiconductor-manufacturing","display_name":"semiconductor manufacturing","score":0.4560000002384186},{"id":"https://openalex.org/keywords/etch-selectivity","display_name":"etch selectivity","score":0.5860000252723694}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.724341630935669},{"id":"https://openalex.org/C184050105","wikidata":"https://www.wikidata.org/wiki/Q273163","display_name":"Isotropy","level":2,"score":0.71572345495224},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6929892301559448},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6783970594406128},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5198098421096802},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.4228518605232239},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3387945890426636},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.32203608751296997},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2823028564453125},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2308591604232788},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1364881694316864},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.11135616898536682}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/ma2023-02291464mtgabs","doi":"https://doi.org/10.1149/ma2023-02291464mtgabs","is_oa":false,"landing_page_url":"https://doi.org/10.1149/ma2023-02291464mtgabs","pdf_url":null,"source":{"id":"https://openalex.org/S4210168594","display_name":"ECS Meeting Abstracts","issn_l":"1091-8213","issn":["1091-8213","2151-2035","2151-2043","2152-8365"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Meeting Abstracts","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3093511481","https://openalex.org/W4385879845","https://openalex.org/W4391662707","https://openalex.org/W4367677012","https://openalex.org/W2922345326","https://openalex.org/W7212286717","https://openalex.org/W7029473446","https://openalex.org/W4367597069","https://openalex.org/W2894985074","https://openalex.org/W4224277211"],"abstract_inverted_index":{"Atomic":[0,435,456,533],"layer":[1,292,330,473,503],"etching":[2,207,310,474,504],"(ALE)":[3],"is":[4,57,73,91,98,228,297,378],"set":[5],"to":[6,34,51,63,109,146,203,220,276,282,300,311,407,415],"be":[7,204,221,408],"a":[8,60,99,328,379,478],"vital":[9],"part":[10,381],"of":[11,22,121,159,266,285,350,382,392,401,420,441,454,475,505,536],"the":[12,23,35,64,89,117,122,144,160,169,278,302,305,314,322,335,341,351,367,383,390,417,439],"advanced":[13],"semiconductor":[14,242],"manufacturing":[15],"toolbox,":[16],"known":[17],"for":[18,164,206,231,264,358],"its":[19],"precise":[20],"control":[21],"film":[24],"thickness":[25],"and":[26,81,143,194,211,216,233,243,268,371,396,410,482,511,540],"minimal":[27],"damage.":[28],"These":[29],"benefits":[30,130,400],"are":[31,40,237,403,413],"possible":[32],"due":[33,50,62,281],"sequential":[36],"self-limiting":[37,306],"half-cycles":[38],"that":[39,227,236,386],"employed":[41,163],"within":[42],"an":[43,225,289,355],"ALE":[44,47,71,126,167,185,198,265,318,325,343,377,384,393,402],"process.":[45],"Initially,":[46],"was":[48],"underestimated":[49],"low":[52],"etch":[53,112,138,147,277,290,416],"rates,":[54,139],"but":[55],"it":[56,354],"now":[58],"experiencing":[59],"renaissance":[61],"requirements":[65],"imposed":[66],"by":[67,257],"further":[68],"downscaling.1":[69],"The":[70,187,246,270,294,398],"community":[72,385],"mostly":[74],"divided":[75],"into":[76],"two":[77,182],"groups:":[78],"plasma":[79,95,107,125,165,184,192,262,295,368,471,481,510],"anisotropic":[80],"thermal":[82,133],"isotropic":[83,94,166,183,376],"etching.":[84],"2":[85],"In":[86,151,339],"this":[87,152,197,273],"work,":[88,177],"focus":[90],"on":[92,181,334,348],"exploring":[93],"ALE,":[96,134,224],"which":[97,178],"relatively":[100],"unexplored":[101],"direction.":[102],"This":[103,317,361],"approach":[104,248,362],"involves":[105,189,249],"using":[106,250,477,508],"radicals":[108],"modify":[110],"and/or":[111],"material":[113,336],"isotropically,":[114],"while":[115],"minimizing":[116],"directional":[118],"ion":[119],"component":[120],"plasma.":[123],"Isotropic":[124,470,500,532],"can":[127,387],"offer":[128],"several":[129],"over":[131,366],"strictly":[132],"such":[135],"as":[136],"higher":[137],"lower":[140],"operating":[141],"temperatures,":[142],"ability":[145],"more":[148,411],"resistant":[149],"materials.":[150],"talk":[153],"we":[154,172],"will":[155,173],"first":[156,188],"address":[157],"some":[158],"different":[161,286],"techniques":[162],"in":[168,239,272,313,394,423],"literature.":[170],"Subsequently,":[171],"discuss":[174],"our":[175],"own":[176],"has":[179,200],"focused":[180],"chemistries.":[186],"alternating":[190],"between":[191],"fluorination":[193,369],"ligand-exchange":[195],"half-cycles,":[196],"chemistry":[199,319,344],"been":[201],"found":[202,219],"effective":[205],"Al2O3,":[208],"HfO2,":[209],"AlN,":[210],"GaN":[212,234],"films.3,4":[213],"Surface":[214],"contaminants":[215],"roughness":[217],"were":[218],"reduced":[222],"post":[223,337],"aspect":[226],"particularly":[229],"important":[230],"AlN":[232],"films":[235],"used":[238],"quantum,":[240],"power":[241],"LED":[244],"applications.":[245],"second":[247],"diketone":[251,271,287,342],"(e.g.":[252],"acetylacetone,":[253],"hexafluoroacetylacetone)":[254],"doses":[255],"followed":[256],"either":[258],"H2":[259],"or":[260],"O2":[261,541],"exposures":[263],"Al2O3":[267,476],"ZnO.5":[269],"process":[274,357,370],"acts":[275],"surface,":[279,303],"however":[280],"competitive":[283],"adsorption":[284],"orientations":[288],"inhibition":[291],"forms.":[293],"step":[296],"then":[298],"utilized":[299,422],"clean":[301],"removing":[304],"inhibitor":[307],"layer,":[308],"enabling":[309],"continue":[312],"next":[315],"cycle.":[316],"diverges":[320],"from":[321],"typical":[323],"modification/removal":[324],"cycle,":[326],"where":[327],"modified":[329],"if":[331],"often":[332],"observed":[333],"ALE.":[338],"comparison":[340],"does":[345],"not":[346],"rely":[347],"modification":[349],"surface":[352,359],"making":[353],"ideal":[356],"cleaning.":[360],"provides":[363],"improved":[364],"selectivity":[365],"also":[372],"enables":[373],"smoothing.":[374],"Plasma":[375],"growing":[380],"help":[388],"accelerate":[389],"adoption":[391],"academia":[395],"industry.":[397],"potential":[399],"only":[404],"just":[405],"beginning":[406],"explored,":[409],"processes":[412],"needed":[414],"ever-increasing":[418],"range":[419],"materials":[421],"IC":[424],"manufacturing.":[425],"Kanarik,":[426],"K.":[427],"J.,":[428],"Tan,":[429],"S.":[430,451],"&":[431,496,529],"Gottscho,":[432],"R.":[433],"A.":[434,498,522],"Layer":[436,457,534],"Etching:":[437],"Rethinking":[438],"Art":[440],"Etch.":[442],"J":[443],"Phys":[444,485],"Chem":[445,460],"Lett":[446,486],"9,":[447],"4814\u20134821":[448],"(2018).":[449,549],"George,":[450],"M.":[452,519,527,528],"Mechanisms":[453],"Thermal":[455],"Etching.":[458],"Acc":[459],"Res":[461],"53,":[462],"1151\u20131160":[463],"(2020).":[464,489],"Chittock,":[465],"N.":[466],"J.":[467,499,523],"et":[468],"al.":[469],"atomic":[472,502],"fluorine":[479],"containing":[480],"Al(CH3)3.":[483,512],"Appl":[484,544],"117,":[487],"162107":[488],"Wang,":[490],"H.,":[491],"Hossain,":[492],"A.,":[493,517,520],"Catherall,":[494],"D.":[495],"Minnich,":[497],"plasma-thermal":[501],"aluminum":[506],"nitride":[507],"SF6":[509],"1\u201314":[513],"(2022)":[514],"doi:arXiv.2209.00150.":[515],"Mameli,":[516],"Verheijen,":[518],"Mackus,":[521],"M.,":[524],"Kessels,":[525],"W.":[526],"Roozeboom,":[530],"F.":[531],"Etching":[535],"ZnO":[537],"Using":[538],"Acetylacetone":[539],"Plasma.":[542],"ACS":[543],"Mater":[545],"Interfaces":[546],"10,":[547],"38588\u201338595":[548]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2024-02-09T00:00:00"}