{"id":"https://openalex.org/W4391217536","doi":"https://doi.org/10.1109/peas58692.2023.10395456","title":"Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress","display_name":"Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress","publication_year":2023,"publication_date":"2023-11-10","ids":{"openalex":"https://openalex.org/W4391217536","doi":"https://doi.org/10.1109/peas58692.2023.10395456"},"language":"en","primary_location":{"id":"doi:10.1109/peas58692.2023.10395456","doi":"https://doi.org/10.1109/peas58692.2023.10395456","is_oa":false,"landing_page_url":"https://doi.org/10.1109/peas58692.2023.10395456","pdf_url":null,"source":{"id":"https://openalex.org/S4363605452","display_name":"IEEE International Power Electronics and Application Symposium (PEAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)","raw_type":"proceedings-article"},"parent_works":[],"lineage":["https://openalex.org/W4391217536"],"child_works_count":0,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5092032263","display_name":"Meng Wang","orcid":"https://orcid.org/0009-0009-0173-777X","observed_orcids":["https://orcid.org/0009-0009-0173-777X"]},"institutions":[{"id":"https://openalex.org/I4405280064","display_name":"Guangzhou Institute of Technology","ror":"https://ror.org/02d1g9y70","country_code":"CN","type":"education","lineage":["https://openalex.org/I4405280064"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Meng Wang","raw_affiliation_strings":["Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555","institution_ids":["https://openalex.org/I4405280064"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100416441","display_name":"Xiangdong Li","orcid":"https://orcid.org/0000-0002-6694-0914","observed_orcids":["https://orcid.org/0000-0002-6694-0914"]},"institutions":[{"id":"https://openalex.org/I4405280064","display_name":"Guangzhou Institute of Technology","ror":"https://ror.org/02d1g9y70","country_code":"CN","type":"education","lineage":["https://openalex.org/I4405280064"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiangdong Li","raw_affiliation_strings":["Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555","institution_ids":["https://openalex.org/I4405280064"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100638045","display_name":"Jincheng Zhang","orcid":"https://orcid.org/0000-0001-7332-6704","observed_orcids":["https://orcid.org/0000-0001-7332-6704","https://orcid.org/0009-0005-1860-0009"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jincheng Zhang","raw_affiliation_strings":["School of Microelectronics, Xidian University,Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Xi'an,China,710071"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Xi'an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100666456","display_name":"Hongyue Wang","orcid":"https://orcid.org/0000-0002-3070-0732","observed_orcids":["https://orcid.org/0000-0002-3070-0732"]},"institutions":[{"id":"https://openalex.org/I4210113818","display_name":"China Electronic Product Reliability and Environmental Test Institute","ror":"https://ror.org/01f4k3b46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210113818"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongyue Wang","raw_affiliation_strings":["China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China,511370"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China,511370","institution_ids":["https://openalex.org/I4210113818"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057506494","display_name":"Junbo Wang","orcid":"https://orcid.org/0009-0009-9467-2214","observed_orcids":["https://orcid.org/0009-0009-9467-2214","https://orcid.org/0009-0003-3415-8340"]},"institutions":[{"id":"https://openalex.org/I4405280064","display_name":"Guangzhou Institute of Technology","ror":"https://ror.org/02d1g9y70","country_code":"CN","type":"education","lineage":["https://openalex.org/I4405280064"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junbo Wang","raw_affiliation_strings":["Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555","institution_ids":["https://openalex.org/I4405280064"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025462318","display_name":"Zhanfei Han","orcid":"https://orcid.org/0009-0003-5728-768X","observed_orcids":["https://orcid.org/0009-0003-5728-768X"]},"institutions":[{"id":"https://openalex.org/I4405280064","display_name":"Guangzhou Institute of Technology","ror":"https://ror.org/02d1g9y70","country_code":"CN","type":"education","lineage":["https://openalex.org/I4405280064"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhanfei Han","raw_affiliation_strings":["Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555","institution_ids":["https://openalex.org/I4405280064"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101987592","display_name":"Jiahui Yuan","orcid":"https://orcid.org/0000-0002-1087-3353","observed_orcids":["https://orcid.org/0000-0002-1087-3353"]},"institutions":[{"id":"https://openalex.org/I4405280064","display_name":"Guangzhou Institute of Technology","ror":"https://ror.org/02d1g9y70","country_code":"CN","type":"education","lineage":["https://openalex.org/I4405280064"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiahui Yuan","raw_affiliation_strings":["Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555","institution_ids":["https://openalex.org/I4405280064"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100750974","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0002-8081-2919","observed_orcids":["https://orcid.org/0000-0002-8081-2919","https://orcid.org/0000-0001-7876-8878","https://orcid.org/0009-0004-2378-727X","https://orcid.org/0009-0008-5312-4601"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["School of Microelectronics, Xidian University,Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Xi'an,China,710071"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Xi'an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.3026,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.85550361,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"141","last_page":"144"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9775000214576721,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9775000214576721,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.021900000050663948,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/p-gan-hemt","display_name":"p-GaN HEMT","score":0.8090000152587891},{"id":"https://openalex.org/keywords/current-collapse","display_name":"current collapse","score":0.8669999837875366},{"id":"https://openalex.org/keywords/short-circuit-stress","display_name":"short-circuit stress","score":0.9440000057220459},{"id":"https://openalex.org/keywords/bias-temperature-instability","display_name":"bias temperature instability","score":0.796999990940094},{"id":"https://openalex.org/keywords/hole-injection","display_name":"hole injection","score":0.6830000281333923},{"id":"https://openalex.org/keywords/gate-leakage-current","display_name":"gate leakage current","score":0.6539999842643738},{"id":"https://openalex.org/keywords/threshold-voltage-degradation","display_name":"threshold voltage degradation","score":0.656000018119812},{"id":"https://openalex.org/keywords/saturation-current","display_name":"saturation current","score":0.640999972820282},{"id":"https://openalex.org/keywords/conduction-resistance","display_name":"conduction resistance","score":0.8600000143051147},{"id":"https://openalex.org/keywords/interface-defects","display_name":"interface defects","score":0.7110000252723694},{"id":"https://openalex.org/keywords/electron-capture","display_name":"electron capture","score":0.5410000085830688}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7237880229949951},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6010343432426453},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.5564876198768616},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5149081945419312},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5148476958274841},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.4986562728881836},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4839801788330078},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.4528738260269165},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.4279380440711975},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.42140209674835205},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.4110374450683594},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4104747176170349},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4044833183288574},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40260404348373413},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.29430845379829407},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.1330934464931488},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09473687410354614},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07692581415176392},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/peas58692.2023.10395456","doi":"https://doi.org/10.1109/peas58692.2023.10395456","is_oa":false,"landing_page_url":"https://doi.org/10.1109/peas58692.2023.10395456","pdf_url":null,"source":{"id":"https://openalex.org/S4363605452","display_name":"IEEE International Power Electronics and Application Symposium (PEAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1994966465","https://openalex.org/W2117631269","https://openalex.org/W2587593571","https://openalex.org/W2801998649","https://openalex.org/W2957082085","https://openalex.org/W2974858747","https://openalex.org/W2976767650","https://openalex.org/W3012121438","https://openalex.org/W3135033321","https://openalex.org/W3159571625","https://openalex.org/W3168517501","https://openalex.org/W3185553151","https://openalex.org/W4378515414"],"related_works":["https://openalex.org/W4391952649","https://openalex.org/W4388676628","https://openalex.org/W4284680457","https://openalex.org/W3158468745","https://openalex.org/W4300916215","https://openalex.org/W3145089782","https://openalex.org/W2126319799","https://openalex.org/W3067662756","https://openalex.org/W7203532941","https://openalex.org/W4416220168"],"abstract_inverted_index":{"This":[0],"study":[1],"investigates":[2],"the":[3,38,67,76,89,117,124,141,144],"recoverable":[4,145],"current":[5,41,68,146],"collapse":[6,42,69,147],"phenomenon":[7],"of":[8,29,40,80,86,126,140,149],"p-GaN":[9,150],"devices":[10],"under":[11,53,70,152],"repetitive":[12],"short-circuit":[13],"(SC)":[14],"stress.":[15,46,154],"A":[16],"SC":[17,45,54,71,87,153],"platform":[18],"is":[19,73,94,98],"established":[20],"to":[21,44,137],"simulate":[22],"high-voltage":[23],"and":[24,34,49,78,96,132,143],"high-current":[25],"conditions.":[26],"The":[27,120],"degradation":[28],"threshold":[30],"voltage,":[31],"saturation":[32],"current,":[33,106],"conduction":[35],"resistance":[36],"indicates":[37,110],"occurrence":[39],"due":[43],"Both":[47],"gate":[48,104,118],"drain":[50],"leakage":[51,105],"decrease":[52,102],"stress,":[55,88],"but":[56],"these":[57],"DC":[58],"parameters":[59],"recover":[60],"after":[61,83],"a":[62,101,111],"2-day":[63],"period,":[64],"suggesting":[65],"that":[66],"stress":[72],"caused":[74],"by":[75,100,129],"charging":[77],"discharging":[79],"defects.":[81],"Moreover,":[82],"1000":[84],"cycles":[85],"bias":[90],"temperature":[91],"instability":[92],"(BTI)":[93],"intensified,":[95],"this":[97],"accompanied":[99],"in":[103,108,113],"which,":[107],"turn,":[109],"reduction":[112],"hole":[114],"injection":[115],"from":[116],"metal.":[119],"underlying":[121],"mechanism":[122],"involves":[123],"capture":[125],"channel":[127],"electrons":[128],"AlGaN,":[130],"p-GaN,":[131],"their":[133],"interface":[134],"defects,":[135],"leading":[136],"an":[138],"elevation":[139],"barrier":[142],"effect":[148],"HEMTs":[151]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2024-01-26T00:00:00"}