{"id":"https://openalex.org/W4390763009","doi":"https://doi.org/10.7567/ssdm.2022.e-4-04","title":"Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer","display_name":"Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer","publication_year":2022,"publication_date":"2022-09-28","ids":{"openalex":"https://openalex.org/W4390763009","doi":"https://doi.org/10.7567/ssdm.2022.e-4-04"},"language":"en","primary_location":{"id":"doi:10.7567/ssdm.2022.e-4-04","doi":"https://doi.org/10.7567/ssdm.2022.e-4-04","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2022.e-4-04","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030726511","display_name":"Masahiro Wakuda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"MASAHIRO WAKUDA","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007316574","display_name":"Motomu Kurata","orcid":"https://orcid.org/0009-0004-3715-8917","observed_orcids":["https://orcid.org/0009-0004-3715-8917"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Motomu Kurata","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110350555","display_name":"Satoru Saito","orcid":"https://orcid.org/0000-0001-6307-4996","observed_orcids":["https://orcid.org/0000-0001-6307-4996"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Satoru Saito","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109389278","display_name":"Shunichi Ito","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shunichi Ito","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108004399","display_name":"Ryo Arasawa","orcid":"https://orcid.org/0000-0002-9538-8778","observed_orcids":["https://orcid.org/0000-0002-9538-8778"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ryo Arasawa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109549574","display_name":"Shinya Sasagawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shinya Sasagawa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032989996","display_name":"Kentaro Sugaya","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kentaro Sugaya","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"Yoshikazu Hiura","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoshikazu Hiura","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"Hidekazu Miyairi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hidekazu Miyairi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075819557","display_name":"Yuji Egi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuji Egi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024882936","display_name":"Ryota Hodo","orcid":"https://orcid.org/0000-0001-7291-5515","observed_orcids":["https://orcid.org/0000-0001-7291-5515"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ryota Hodo","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074394648","display_name":"Hitoshi Kunitake","orcid":"https://orcid.org/0000-0003-1187-4590","observed_orcids":["https://orcid.org/0000-0003-1187-4590"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hitoshi Kunitake","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5077676320","display_name":"Shunpei Yamazaki","orcid":"https://orcid.org/0000-0001-6055-8987","observed_orcids":["https://orcid.org/0000-0001-6055-8987"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shunpei Yamazaki","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9628999829292297,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9628999829292297,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.007499999832361937,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0035000001080334187,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-gallium-zinc-oxide","display_name":"indium gallium zinc oxide","score":0.8840000033378601},{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.6959999799728394},{"id":"https://openalex.org/keywords/trench-gate","display_name":"trench gate","score":0.5619999766349792},{"id":"https://openalex.org/keywords/self-aligned-gate","display_name":"self-aligned gate","score":0.6679999828338623},{"id":"https://openalex.org/keywords/c-axis-orientation","display_name":"c-axis orientation","score":0.7599999904632568},{"id":"https://openalex.org/keywords/capping-layer","display_name":"capping layer","score":0.652999997138977},{"id":"https://openalex.org/keywords/transparent-thin-film-transistors","display_name":"transparent thin-film transistors","score":0.6589999794960022}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8062912225723267},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6919305324554443},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.6658458709716797},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6633540391921997},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.572489857673645},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.5548372268676758},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.5307842493057251},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.48237743973731995},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4785661995410919},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.44714412093162537},{"id":"https://openalex.org/C32737372","wikidata":"https://www.wikidata.org/wiki/Q417718","display_name":"Indium tin oxide","level":3,"score":0.4384024441242218},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.42515814304351807},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3354237675666809},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16906893253326416},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.14380425214767456},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/ssdm.2022.e-4-04","doi":"https://doi.org/10.7567/ssdm.2022.e-4-04","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2022.e-4-04","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2790135553","https://openalex.org/W4415235924","https://openalex.org/W2473580956","https://openalex.org/W2252999054","https://openalex.org/W2323719824","https://openalex.org/W2468330742","https://openalex.org/W2290950696","https://openalex.org/W2460080360","https://openalex.org/W1992791128","https://openalex.org/W4206112370"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-05T09:50:58.205359","created_date":"2024-01-13T00:00:00"}