{"id":"https://openalex.org/W4387933202","doi":"https://doi.org/10.23919/eumic58042.2023.10289041","title":"V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology","display_name":"V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology","publication_year":2023,"publication_date":"2023-09-18","ids":{"openalex":"https://openalex.org/W4387933202","doi":"https://doi.org/10.23919/eumic58042.2023.10289041"},"language":"en","primary_location":{"id":"doi:10.23919/eumic58042.2023.10289041","doi":"https://doi.org/10.23919/eumic58042.2023.10289041","is_oa":false,"landing_page_url":"https://doi.org/10.23919/eumic58042.2023.10289041","pdf_url":null,"source":{"id":"https://openalex.org/S4306418365","display_name":"European Microwave Integrated Circuits Conference","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 18th European Microwave Integrated Circuits Conference (EuMIC)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059585051","display_name":"Mohamed Bouslama","orcid":"https://orcid.org/0000-0001-8297-1772","observed_orcids":["https://orcid.org/0000-0001-8297-1772"]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Bouslama","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083660567","display_name":"S. Piotrowicz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Piotrowicz","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015885181","display_name":"N. Michel","orcid":"https://orcid.org/0000-0002-3241-9119","observed_orcids":["https://orcid.org/0000-0002-3241-9119"]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Michel","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025145894","display_name":"Linh Trinh-Xuan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210123312","display_name":"United Monolithic Semiconductors (Germany)","ror":"https://ror.org/035gava43","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210123312"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"L. Trinh-Xuan","raw_affiliation_strings":["UMS GmbH, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMS GmbH, Germany","institution_ids":["https://openalex.org/I4210123312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108516239","display_name":"Jonathan Leroy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210140624","display_name":"United Monolithic Semiconductor (France)","ror":"https://ror.org/034zb3z40","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140624"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Leroy","raw_affiliation_strings":["UMS S.A.S, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMS S.A.S, France","institution_ids":["https://openalex.org/I4210140624"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071962064","display_name":"S\u00e9bastien Aroulanda","orcid":"https://orcid.org/0009-0003-0116-3653","observed_orcids":["https://orcid.org/0009-0003-0116-3653"]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Aroulanda","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076301660","display_name":"Samira Driad","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210140624","display_name":"United Monolithic Semiconductor (France)","ror":"https://ror.org/034zb3z40","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140624"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Driad","raw_affiliation_strings":["UMS S.A.S, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMS S.A.S, France","institution_ids":["https://openalex.org/I4210140624"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038857926","display_name":"Louiza Hamidouche","orcid":"https://orcid.org/0000-0002-6253-5145","observed_orcids":["https://orcid.org/0000-0002-6253-5145"]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"L. Hamidouche","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":null,"display_name":"J.C. Jacquet","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.C. Jacquet","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5093123778","display_name":"Q. L\u00e9svesque","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Q. L\u00e9svesque","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025913820","display_name":"M. Oualli","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Oualli","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103173193","display_name":"Christophe Chang","orcid":"https://orcid.org/0000-0002-9925-7134","observed_orcids":["https://orcid.org/0000-0002-9925-7134"]},"institutions":[{"id":"https://openalex.org/I4210140624","display_name":"United Monolithic Semiconductor (France)","ror":"https://ror.org/034zb3z40","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140624"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Chang","raw_affiliation_strings":["UMS S.A.S, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMS S.A.S, France","institution_ids":["https://openalex.org/I4210140624"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024135504","display_name":"Philippe Fellon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210140624","display_name":"United Monolithic Semiconductor (France)","ror":"https://ror.org/034zb3z40","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140624"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Fellon","raw_affiliation_strings":["UMS S.A.S, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMS S.A.S, France","institution_ids":["https://openalex.org/I4210140624"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024504806","display_name":"S.L. Delage","orcid":"https://orcid.org/0000-0001-6183-1201","observed_orcids":["https://orcid.org/0000-0001-6183-1201"]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S.L. Delage","raw_affiliation_strings":["III-V Lab, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"III-V Lab, France","institution_ids":["https://openalex.org/I4210152719"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.0671,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.95662149,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"165","last_page":"168"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9901999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9901999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.007600000128149986,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mmic","display_name":"MMIC","score":0.9919999837875366},{"id":"https://openalex.org/keywords/inaln-gan-hemt","display_name":"InAlN/GaN HEMT","score":0.9909999966621399},{"id":"https://openalex.org/keywords/silicon-carbide-substrate","display_name":"SiC substrate","score":0.8980000019073486},{"id":"https://openalex.org/keywords/nonlinear-transistor-model","display_name":"nonlinear transistor model","score":0.7649999856948853},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"power-added efficiency","score":0.7940000295639038},{"id":"https://openalex.org/keywords/gain","display_name":"gain","score":0.3199999928474426},{"id":"https://openalex.org/keywords/power-output","display_name":"output power","score":0.718999981880188},{"id":"https://openalex.org/keywords/millimeter-wave-amplifier","display_name":"millimeter-wave amplifier","score":0.7070000171661377}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7833523750305176},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7320113182067871},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.7264623641967773},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6097540855407715},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.565672755241394},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.554621696472168},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5241349339485168},{"id":"https://openalex.org/C183093025","wikidata":"https://www.wikidata.org/wiki/Q5515158","display_name":"G band","level":3,"score":0.4867737293243408},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.43066078424453735},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4223017394542694},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4112413227558136},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.41034942865371704},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3983321785926819},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1592704951763153},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.11114460229873657},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10576286911964417},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.10106134414672852},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.06036636233329773},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/eumic58042.2023.10289041","doi":"https://doi.org/10.23919/eumic58042.2023.10289041","is_oa":false,"landing_page_url":"https://doi.org/10.23919/eumic58042.2023.10289041","pdf_url":null,"source":{"id":"https://openalex.org/S4306418365","display_name":"European Microwave Integrated Circuits Conference","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 18th European Microwave Integrated Circuits Conference (EuMIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2123474501","https://openalex.org/W2143906132","https://openalex.org/W2559893927","https://openalex.org/W2884541095","https://openalex.org/W2887111262"],"related_works":["https://openalex.org/W4206178341","https://openalex.org/W4393379201","https://openalex.org/W2154110311","https://openalex.org/W2990594320","https://openalex.org/W2147916589","https://openalex.org/W2887111262","https://openalex.org/W1585372443","https://openalex.org/W2336908750","https://openalex.org/W4401113884","https://openalex.org/W1486535938"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"results":[3,54],"on":[4,18],"a":[5,39,60],"V":[6],"band":[7],"[55":[8],"$\\mathbf{G":[9],"H":[10],"z}-71$":[11],"GHz]":[12,104],"MMIC":[13],"power":[14,89],"amplifier":[15,66],"(PA)":[16],"based":[17],"InAlN/GaN":[19],"HEMT":[20],"technology":[21],"with":[22,63,86],"$0.10-\\mu":[23],"\\mathrm{m}$":[24,32],"gate":[25,33],"length":[26],"and":[27,47,50,94],"$4":[28],"\\times":[29],"50":[30],"\\mu":[31],"width":[34],"are":[35],"presented.":[36],"For":[37],"that,":[38],"non-linear":[40],"model":[41],"of":[42,55,72],"transistor":[43],"has":[44],"been":[45],"developed":[46],"validated.":[48],"Small":[49],"large":[51,79],"signal":[52,80],"measurements":[53,81],"V-Band":[56],"$P":[57],"A$":[58],"show":[59,82],"good":[61,84],"agreement":[62],"simulations.":[64],"The":[65,78],"delivers":[67],"more":[68],"than":[69],"$22":[70],"\\mathrm{~dB}$":[71],"gain":[73],"in":[74,101],"the":[75],"operating":[76],"bandwidth.":[77,105],"also":[83],"performances":[85],"an":[87],"output":[88],"between":[90,97],"$[31":[91],"\\mathrm{dBm}-28.5$":[92],"$\\mathrm{dBm}]$":[93],"PAE":[95],"ranging":[96],"$[17":[98],"\\%-10":[99],"\\%]$":[100],"$[54":[102],"\\mathrm{GHz}-60$":[103]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":4}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2023-10-26T00:00:00"}