{"id":"https://openalex.org/W4387918008","doi":"https://doi.org/10.1109/led.2023.3327134","title":"Heterointegrated Ga 2 O 3 -on-SiC RF MOSFETs With f T / f max of 47/51 GHz by Ion-Cutting Process","display_name":"Heterointegrated Ga 2 O 3 -on-SiC RF MOSFETs With f T / f max of 47/51 GHz by Ion-Cutting Process","publication_year":2023,"publication_date":"2023-10-24","ids":{"openalex":"https://openalex.org/W4387918008","doi":"https://doi.org/10.1109/led.2023.3327134"},"language":"en","primary_location":{"id":"doi:10.1109/led.2023.3327134","doi":"https://doi.org/10.1109/led.2023.3327134","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2023.3327134","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010047420","display_name":"Xinxin Yu","orcid":"https://orcid.org/0000-0003-0898-8837","observed_orcids":["https://orcid.org/0000-0003-0898-8837"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinxin Yu","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China","CETC Key Laboratory of Carbon-Based Electronics and Nanjing Electronic Devices Institute, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0003-0898-8837","affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]},{"raw_affiliation_string":"CETC Key Laboratory of Carbon-Based Electronics and Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046827300","display_name":"Wenhui Xu","orcid":"https://orcid.org/0000-0002-5152-9196","observed_orcids":["https://orcid.org/0000-0002-5152-9196"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenhui Xu","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0002-5152-9196","affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100354972","display_name":"Yibo Wang","orcid":"https://orcid.org/0000-0002-4058-1319","observed_orcids":["https://orcid.org/0000-0002-4058-1319"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yibo Wang","raw_affiliation_strings":["Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":"https://orcid.org/0000-0002-4058-1319","affiliations":[{"raw_affiliation_string":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Bing Qiao","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Bing Qiao","raw_affiliation_strings":["CETC Key Laboratory of Carbon-Based Electronics, Nanjing Electronic Devices Institute, National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CETC Key Laboratory of Carbon-Based Electronics, Nanjing Electronic Devices Institute, National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Rui Shen","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Rui Shen","raw_affiliation_strings":["CETC Key Laboratory of Carbon-Based Electronics, Nanjing Electronic Devices Institute, National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CETC Key Laboratory of Carbon-Based Electronics, Nanjing Electronic Devices Institute, National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053282449","display_name":"Jianjun Zhou","orcid":"https://orcid.org/0000-0003-2215-0600","observed_orcids":["https://orcid.org/0000-0003-2215-0600"]},"institutions":[{"id":"https://openalex.org/I4405281920","display_name":"The 28th Research Institute of China Electronics Technology Group Corporation","ror":"https://ror.org/05355jx47","country_code":"CN","type":"facility","lineage":["https://openalex.org/I2800372957","https://openalex.org/I4405281920"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianjun Zhou","raw_affiliation_strings":["Nanjing Electronic Devices Institute, Nanjing, China","National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":["https://openalex.org/I4405281920"]},{"raw_affiliation_string":"National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075978121","display_name":"Zhonghui Li","orcid":"https://orcid.org/0000-0002-7835-498X","observed_orcids":["https://orcid.org/0000-0002-7835-498X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhonghui Li","raw_affiliation_strings":["CETC Key Laboratory of Carbon-Based Electronics, Nanjing Electronic Devices Institute, National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CETC Key Laboratory of Carbon-Based Electronics, Nanjing Electronic Devices Institute, National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057373127","display_name":"Tiangui You","orcid":"https://orcid.org/0000-0001-8978-4582","observed_orcids":["https://orcid.org/0000-0001-8978-4582"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tiangui You","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013832814","display_name":"Zhenghao Shen","orcid":"https://orcid.org/0000-0002-0514-0665","observed_orcids":["https://orcid.org/0000-0002-0514-0665"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhenghao Shen","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024084717","display_name":"Kai Zhang","orcid":"https://orcid.org/0000-0002-2984-5985","observed_orcids":["https://orcid.org/0000-0002-2984-5985"]},"institutions":[{"id":"https://openalex.org/I4405281920","display_name":"The 28th Research Institute of China Electronics Technology Group Corporation","ror":"https://ror.org/05355jx47","country_code":"CN","type":"facility","lineage":["https://openalex.org/I2800372957","https://openalex.org/I4405281920"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Zhang","raw_affiliation_strings":["Nanjing Electronic Devices Institute, Nanjing, China","National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-2984-5985","affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":["https://openalex.org/I4405281920"]},{"raw_affiliation_string":"National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100640649","display_name":"Fangfang Ren","orcid":"https://orcid.org/0000-0001-5598-9512","observed_orcids":["https://orcid.org/0000-0001-5598-9512"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fang-Fang Ren","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0001-5598-9512","affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022978982","display_name":"Dongming Tang","orcid":"https://orcid.org/0000-0003-3652-1417","observed_orcids":["https://orcid.org/0000-0003-3652-1417"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongming Tang","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071226980","display_name":"Xin Ou","orcid":"https://orcid.org/0000-0002-0316-9958","observed_orcids":["https://orcid.org/0000-0002-0316-9958"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xin Ou","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0002-0316-9958","affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055388927","display_name":"Genquan Han","orcid":"https://orcid.org/0000-0001-5140-4150","observed_orcids":["https://orcid.org/0000-0001-5140-4150"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Genquan Han","raw_affiliation_strings":["School of Microelectronics, Xidian University, Xi\u2019an, China","Hangzhou Institute of Technology, Xidian University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0000-0001-5140-4150","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Hangzhou Institute of Technology, Xidian University, Hangzhou, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018031449","display_name":"Yuechan Kong","orcid":"https://orcid.org/0000-0001-8968-2615","observed_orcids":["https://orcid.org/0000-0001-8968-2615"]},"institutions":[{"id":"https://openalex.org/I4405281920","display_name":"The 28th Research Institute of China Electronics Technology Group Corporation","ror":"https://ror.org/05355jx47","country_code":"CN","type":"facility","lineage":["https://openalex.org/I2800372957","https://openalex.org/I4405281920"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuechan Kong","raw_affiliation_strings":["Nanjing Electronic Devices Institute, Nanjing, China","National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0001-8968-2615","affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":["https://openalex.org/I4405281920"]},{"raw_affiliation_string":"National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104184223","display_name":"Tangsheng Chen","orcid":"https://orcid.org/0009-0005-8882-266X","observed_orcids":["https://orcid.org/0009-0005-8882-266X"]},"institutions":[{"id":"https://openalex.org/I4405281920","display_name":"The 28th Research Institute of China Electronics Technology Group Corporation","ror":"https://ror.org/05355jx47","country_code":"CN","type":"facility","lineage":["https://openalex.org/I2800372957","https://openalex.org/I4405281920"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tangsheng Chen","raw_affiliation_strings":["Nanjing Electronic Devices Institute, Nanjing, China","National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":["https://openalex.org/I4405281920"]},{"raw_affiliation_string":"National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050461236","display_name":"Shulin Gu","orcid":"https://orcid.org/0000-0001-9322-5978","observed_orcids":["https://orcid.org/0000-0001-9322-5978"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shulin Gu","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100342736","display_name":"Yi Zheng","orcid":"https://orcid.org/0000-0002-9487-1151","observed_orcids":["https://orcid.org/0000-0002-9487-1151"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Youdou Zheng","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101508855","display_name":"Jiandong Ye","orcid":"https://orcid.org/0000-0002-3985-6768","observed_orcids":["https://orcid.org/0000-0002-3985-6768"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiandong Ye","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-3985-6768","affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100451810","display_name":"Rong Zhang","orcid":"https://orcid.org/0000-0003-0015-6331","observed_orcids":["https://orcid.org/0000-0003-0015-6331","https://orcid.org/0000-0002-9815-2832"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rong Zhang","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0003-0015-6331","affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2345,"currency":"USD","value_usd":2345},"apc_paid":null,"fwci":2.229,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.88935789,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"44","issue":"12","first_page":"1951","last_page":"1954"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.7770000100135803},{"id":"https://openalex.org/keywords/rf-mosfet","display_name":"RF MOSFET","score":0.8040000200271606},{"id":"https://openalex.org/keywords/hetero-integration","display_name":"hetero-integration","score":0.8389999866485596},{"id":"https://openalex.org/keywords/silicon-ion-implantation","display_name":"silicon ion implantation","score":0.7210000157356262},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.878000020980835},{"id":"https://openalex.org/keywords/4h-sic-substrate","display_name":"4H-SiC substrate","score":0.8420000076293945},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.7730000019073486},{"id":"https://openalex.org/keywords/maximum-frequency-of-oscillation","display_name":"maximum oscillation frequency","score":0.9459999799728394},{"id":"https://openalex.org/keywords/gate-length-scaling","display_name":"gate length scaling","score":0.5460000038146973},{"id":"https://openalex.org/keywords/output-power-density","display_name":"output power density","score":0.7760000228881836},{"id":"https://openalex.org/keywords/power-gain","display_name":"power gain","score":0.6679999828338623},{"id":"https://openalex.org/keywords/high-electron-mobility","display_name":"high electron mobility","score":0.6050000190734863}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.4744116961956024},{"id":"https://openalex.org/C45357846","wikidata":"https://www.wikidata.org/wiki/Q2001982","display_name":"Notation","level":2,"score":0.41742339730262756},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3632351756095886},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.311578631401062},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.19756975769996643},{"id":"https://openalex.org/C94375191","wikidata":"https://www.wikidata.org/wiki/Q11205","display_name":"Arithmetic","level":1,"score":0.16417840123176575},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/led.2023.3327134","doi":"https://doi.org/10.1109/led.2023.3327134","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2023.3327134","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G281605579","display_name":null,"funder_award_id":"U21A2071","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4259696608","display_name":null,"funder_award_id":"U21A20503","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4700815263","display_name":null,"funder_award_id":"62234007","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G512247061","display_name":null,"funder_award_id":"2022YFB3605403","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G60704672","display_name":null,"funder_award_id":"62293521","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W2031161882","https://openalex.org/W2055418889","https://openalex.org/W2080368224","https://openalex.org/W2606782229","https://openalex.org/W2887168725","https://openalex.org/W2948544787","https://openalex.org/W2983397899","https://openalex.org/W2996238279","https://openalex.org/W2997861841","https://openalex.org/W3024112370","https://openalex.org/W3035605709","https://openalex.org/W3045586837","https://openalex.org/W3058278899","https://openalex.org/W3090108760","https://openalex.org/W3110781701","https://openalex.org/W3114073772","https://openalex.org/W3122014223","https://openalex.org/W3188931232","https://openalex.org/W4210901099","https://openalex.org/W4221039548","https://openalex.org/W4225568689","https://openalex.org/W4291972099","https://openalex.org/W4318068889","https://openalex.org/W4368365223","https://openalex.org/W4379117210"],"related_works":["https://openalex.org/W4411799359","https://openalex.org/W4401880412","https://openalex.org/W4409561287","https://openalex.org/W2606782229","https://openalex.org/W4391594658","https://openalex.org/W4408258142","https://openalex.org/W4379117210","https://openalex.org/W4401333726","https://openalex.org/W4225568689","https://openalex.org/W4308167527"],"abstract_inverted_index":{"Heterointegrated":[0],"Ga2O3-on-SiC":[1],"radio-frequency":[2],"(RF)":[3],"MOSFETs":[4],"with":[5,17,87],"record-high":[6,69],"frequency":[7,72,80],"performances":[8],"were":[9,85],"reported.":[10],"A":[11,68],"two-dimensional":[12],"electron":[13,20],"gas":[14],"like":[15],"channel":[16],"a":[18,54,62,111],"high":[19,55,112],"concentration":[21],"and":[22,61,77,110,137],"decent":[23],"mobility":[24],"was":[25],"formed":[26],"through":[27,46],"the":[28,40,88,97,130,142],"shallow":[29],"implantation":[30],"of":[31,58,107,115,141],"Si":[32],"into":[33],"the$\\beta":[34],"$-Ga2O3":[35],"(\u2212201)":[36],"nanomembrane":[37],"integrated":[38],"on":[39,145],"highly":[41],"thermal":[42,139],"conductive":[43],"4H-SiC":[44],"substrate":[45],"an":[47,103],"ion-cutting":[48,148],"process.":[49,149],"The":[50],"resultant":[51],"MOSFET":[52],"yields":[53],"current":[56,70,135],"density":[57,106],"661":[59],"mA/mm":[60],"transconductance":[63],"(${g}_{\\text":[64],"{m}}{)}$of":[65],"57":[66],"mS/mm.":[67],"cut-off":[71],"(${f}_{\\text":[73,81],"{T}}{)}$of":[74],"47":[75],"GHz":[76,84,120],"maximum":[78],"oscillation":[79],"{max}}{)}$of":[82],"51":[83],"achieved":[86],"gate":[89,132],"length":[90],"(${L}_{\\text":[91],"{G}}{)}$scaled":[92],"down":[93],"to$0.1~\\mu":[94],"\\text{m}$.":[95],"Furthermore,":[96],"device":[98],"with${L}_{\\text":[99],"{G}}=":[100],"0.1\\,\\,\\mu":[101],"\\text{m}$showcases":[102],"output":[104],"power":[105,113],"296":[108],"mW/mm":[109],"gain":[114],"11":[116],"dB":[117],"at":[118],"2":[119],"in":[121],"continue":[122],"wave":[123],"(CW)":[124],"mode.":[125],"It":[126],"is":[127],"attributed":[128],"to":[129],"enhanced":[131],"control,":[133],"elevated":[134],"output,":[136],"improved":[138],"conductivity":[140],"heterointegrated":[143],"Ga2O3":[144],"SiC":[146],"by":[147]},"counts_by_year":[{"year":2026,"cited_by_count":13},{"year":2025,"cited_by_count":15},{"year":2024,"cited_by_count":9}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2023-10-25T00:00:00"}