{"id":"https://openalex.org/W4387251069","doi":"https://doi.org/10.23919/epe23ecceeurope58414.2023.10264232","title":"Investigation on the Thermal Stability of Silicon-carbide MOSFETs operating in Controlled Shoot-through mode","display_name":"Investigation on the Thermal Stability of Silicon-carbide MOSFETs operating in Controlled Shoot-through mode","publication_year":2023,"publication_date":"2023-09-04","ids":{"openalex":"https://openalex.org/W4387251069","doi":"https://doi.org/10.23919/epe23ecceeurope58414.2023.10264232"},"language":"en","primary_location":{"id":"doi:10.23919/epe23ecceeurope58414.2023.10264232","doi":"https://doi.org/10.23919/epe23ecceeurope58414.2023.10264232","is_oa":false,"landing_page_url":"http://dx.doi.org/10.23919/epe23ecceeurope58414.2023.10264232","pdf_url":null,"source":{"id":"https://openalex.org/S4306418342","display_name":"European Conference on Power Electronics and Applications","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027955065","display_name":"Alessandro Soldati","orcid":"https://orcid.org/0000-0001-7662-9815","observed_orcids":["https://orcid.org/0000-0001-7662-9815"]},"institutions":[{"id":"https://openalex.org/I124601658","display_name":"University of Parma","ror":"https://ror.org/02k7wn190","country_code":"IT","type":"education","lineage":["https://openalex.org/I124601658"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Alessandro Soldati","raw_affiliation_strings":["University Of Parma,Department of Engineering and Architecture,Parma,Italy,43124"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University Of Parma,Department of Engineering and Architecture,Parma,Italy,43124","institution_ids":["https://openalex.org/I124601658"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037911846","display_name":"Vishal Undre","orcid":"https://orcid.org/0000-0003-3605-7925","observed_orcids":["https://orcid.org/0000-0003-3605-7925"]},"institutions":[{"id":"https://openalex.org/I124601658","display_name":"University of Parma","ror":"https://ror.org/02k7wn190","country_code":"IT","type":"education","lineage":["https://openalex.org/I124601658"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Vishal Shivaji Undre","raw_affiliation_strings":["University Of Parma,Department of Engineering and Architecture,Parma,Italy,43124"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University Of Parma,Department of Engineering and Architecture,Parma,Italy,43124","institution_ids":["https://openalex.org/I124601658"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087181457","display_name":"R. Menozzi","orcid":"https://orcid.org/0000-0002-3867-3302","observed_orcids":["https://orcid.org/0000-0002-3867-3302"]},"institutions":[{"id":"https://openalex.org/I124601658","display_name":"University of Parma","ror":"https://ror.org/02k7wn190","country_code":"IT","type":"education","lineage":["https://openalex.org/I124601658"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Roberto Menozzi","raw_affiliation_strings":["University Of Parma,Department of Engineering and Architecture,Parma,Italy,43124"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University Of Parma,Department of Engineering and Architecture,Parma,Italy,43124","institution_ids":["https://openalex.org/I124601658"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I124601658"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.8429999947547913},{"id":"https://openalex.org/keywords/thermal-stability","display_name":"thermal stability","score":0.972000002861023},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"power MOSFET","score":0.7300000190734863},{"id":"https://openalex.org/keywords/long-pulses","display_name":"long pulses","score":0.6859999895095825},{"id":"https://openalex.org/keywords/temperature-monitoring","display_name":"temperature monitoring","score":0.6110000014305115}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7551180124282837},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.69489985704422},{"id":"https://openalex.org/C59061564","wikidata":"https://www.wikidata.org/wiki/Q7783071","display_name":"Thermal stability","level":2,"score":0.614992082118988},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5478330850601196},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5105291604995728},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4980325698852539},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.49525895714759827},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47628751397132874},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.47156450152397156},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4713810384273529},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4629088342189789},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4420916736125946},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4409584403038025},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4310307502746582},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20235034823417664},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11664003133773804},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.10480141639709473},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06927698850631714},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/epe23ecceeurope58414.2023.10264232","doi":"https://doi.org/10.23919/epe23ecceeurope58414.2023.10264232","is_oa":false,"landing_page_url":"http://dx.doi.org/10.23919/epe23ecceeurope58414.2023.10264232","pdf_url":null,"source":{"id":"https://openalex.org/S4306418342","display_name":"European Conference on Power Electronics and Applications","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1483017127","https://openalex.org/W1939277053","https://openalex.org/W1989240775","https://openalex.org/W2021064963","https://openalex.org/W2021095465","https://openalex.org/W2079826846","https://openalex.org/W2090351065","https://openalex.org/W2113560421","https://openalex.org/W2129505188","https://openalex.org/W2146719088","https://openalex.org/W2157764301","https://openalex.org/W2585429585","https://openalex.org/W2613068640","https://openalex.org/W2771775453","https://openalex.org/W2774605962","https://openalex.org/W3004464897","https://openalex.org/W3145245125","https://openalex.org/W3212909309","https://openalex.org/W4251792758","https://openalex.org/W4312219096"],"related_works":["https://openalex.org/W2089650562","https://openalex.org/W1974087468","https://openalex.org/W2045081320","https://openalex.org/W2978681100","https://openalex.org/W2503541310","https://openalex.org/W1965299962","https://openalex.org/W2012301653","https://openalex.org/W3027521505","https://openalex.org/W2128836321","https://openalex.org/W2168014469"],"abstract_inverted_index":{"The":[0],"Controlled":[1],"Shoot-Through":[2],"technique":[3],"is":[4],"an":[5],"emerging":[6],"and":[7,13],"promising":[8],"one":[9],"for":[10],"thermal":[11,24,48],"control":[12],"monitoring":[14],"of":[15,26,41],"power":[16,28],"MOSFETs.":[17],"In":[18],"this":[19],"work":[20],"we":[21],"investigate":[22],"the":[23,27,39],"stability":[25],"device":[29],"in":[30],"current-controlled":[31],"mode":[32],"at":[33],"low":[34],"gate":[35],"voltages,":[36],"to":[37],"identify":[38],"effects":[40],"long":[42],"pulses,":[43],"as":[44],"needed":[45],"by":[46],"in-circuit":[47],"analysis.":[49]},"counts_by_year":[],"updated_date":"2026-10-05T09:50:58.205359","created_date":"2023-10-03T00:00:00"}